JP5764781B2 - フレキシブル基板上のイメージ撮像デバイスの実装におけるシステムと方法 - Google Patents
フレキシブル基板上のイメージ撮像デバイスの実装におけるシステムと方法 Download PDFInfo
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- JP5764781B2 JP5764781B2 JP2012158069A JP2012158069A JP5764781B2 JP 5764781 B2 JP5764781 B2 JP 5764781B2 JP 2012158069 A JP2012158069 A JP 2012158069A JP 2012158069 A JP2012158069 A JP 2012158069A JP 5764781 B2 JP5764781 B2 JP 5764781B2
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- 229910052759 nickel Inorganic materials 0.000 claims description 17
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 15
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- 230000003287 optical effect Effects 0.000 description 10
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- 239000002184 metal Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 4
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- 238000003466 welding Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
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- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- MPCDNZSLJWJDNW-UHFFFAOYSA-N 1,2,3-trichloro-4-(3,5-dichlorophenyl)benzene Chemical compound ClC1=CC(Cl)=CC(C=2C(=C(Cl)C(Cl)=CC=2)Cl)=C1 MPCDNZSLJWJDNW-UHFFFAOYSA-N 0.000 description 1
- BWWVXHRLMPBDCK-UHFFFAOYSA-N 1,2,4-trichloro-5-(2,6-dichlorophenyl)benzene Chemical compound C1=C(Cl)C(Cl)=CC(Cl)=C1C1=C(Cl)C=CC=C1Cl BWWVXHRLMPBDCK-UHFFFAOYSA-N 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- -1 but not limited to Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- MPTQRFCYZCXJFQ-UHFFFAOYSA-L copper(II) chloride dihydrate Chemical compound O.O.[Cl-].[Cl-].[Cu+2] MPTQRFCYZCXJFQ-UHFFFAOYSA-L 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15192—Resurf arrangement of the internal vias
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/189—Printed circuits structurally associated with non-printed electric components characterised by the use of a flexible or folded printed circuit
Description
る。結果、レンズはカメラ内の開口部と一線上に並んでいる。
更に特定の実施形態において、可撓性の基層は、耐熱性を有する剛性のポリマ樹脂(例えば、ポリイミド)を備える。導電性のトレース層上に接触パッドが形成され、トレース
層への電気的接続を可能とする。これら接触パッドは、例えば、導電性のトレース上に形成されたニッケルからなる層と、ニッケルからなる層上に形成される金からなる層を備える。必要に応じて、電気的な絶縁表面層(例えば、ソルダーマスク)が、トレース層上に形成される。この絶縁表面層は、FPC基板上の開口部を定め、接触が接触パッドになされることを可能とする(例えば、ワイヤボンディング)。
更に特定の実施形態において、コネクタパッドは、FPC基板の一方の面上に形成される。また、補強材が、FPC基板の反対側の面に据付けられる。この補強材は、ZIF形式のFPCコネクタの形成を可能とする。
更なる特定の方法において、電気的接触パッドが、トレース層上に形成される。必要に応じて、接触パッドは、導電トレース上にニッケルからなる層を形成し、ニッケルからなる層上に金からなる層を形成することにより作り出される。金属層は、その後、電気的接触部の形態にパターン加工を施される。必要に応じて、FPC基板を提供する段階は、導電性を有するトレース層上に電気的に絶縁する層を形成する段階を含む。
更に特定の形態において、イメージ撮像デバイスの接触パッドは、FPC基板の接触パッドに電気的に接続され、この接続は、接着剤を用いた金製のスタッドの熱圧縮ボンドを行なうことによりなされる。
特定の方法において、補強材は、イメージ撮像デバイスが取付けられたFPCの面の反対側の面に据付けられる。加えて/或いは、補強材は、FPC基板の接触パッドの下方に少なくともその一部が配されるように位置決めされる。これにより、FPC基板の接触パッドのワイヤボンディング工程を補助することが可能となる。
更に特定の方法は、レンズハウジングと補強材のうち一方に形成された複数の取付用柱部を、レンズハウジングと補強材のうち他方に形成された複数の相補的開口部に挿入する段階を備える。
更に特定の方法において、コネクタを形成する段階は、FPC基板の表面上に電気的接触部を形成する段階と、電気的接触部と反対側のFPC基板の第2の面に補強材を取付ける段階を備える。
にある雌電気コネクタと雄電気コネクタは接続される。
Claims (3)
- 可撓性を有する回路基板と、該回路基板表面に実装されるイメージ撮像デバイスと、前記イメージ撮像デバイス上に実装されるレンズハウジングと、前記イメージ撮像デバイス下方の裏面に取り付けられる補強材とを含むデジタルカメラモジュールであって、
前記レンズハウジングが前記補強材に直接接続され、
前記可撓性を有する回路基板が、可撓性の基層と、該可撓性の基層上に形成される第1、第2の導電性のトレース層と、イメージ撮像デバイス用の複数の第1接触パッドと、コネクタ(214)と、を備え、
記第1の導電性のトレース層が、イメージ撮像デバイスの実装される側の第1面上に設けられており、
前記第2の導電性のトレース層が、前記第1面の反対の第2面に設けられており、前記可撓性を有する回路基板を通って前記第1の導電性のトレース層に接続されており、
前記複数の第1接触パッドが、前記第1の導電性のトレース層に電気的に接続されており、
前記コネクタ(214)が、複数の第2接触パッドを備え、該第2接触パッドが前記第2の導電性のトレース層に電気的に接続されており、
前記可撓性を有する回路基板が、第2面側へと曲げて用いられ、前記第1接触パッドの各々が、前記第1の導電性のトレース層上に接着されるニッケルからなる層と、前記ニッケルからなる層上に接着される金からなる層とからなり、
前記可撓性を有する回路基板が、屈曲した状態で、ホスト装置側のコネクタ(614)に接続されてなる
ことを特徴とするデジタルカメラモジュール。 - 前記イメージ撮像デバイスと同じ、前記可撓性を有する回路基板の側に実装される少なくとも1つの電子デバイスをさらに備え、
前記レンズハウジングが、前記可撓性を有する回路基板との接触域を定義し、
前記補強材が、前記レンズハウジングの前記接触域を超えて延びる延長部を定義し、
前記少なくとも1つの電子デバイスが前記補強材の前記延長部上の、前記レンズハウジングの前記接触域の外側に設けられてなる請求項1に記載のデジタルカメラモジュール。 - 前記補強材が取り付け開口部及び取り付け柱の一つを含み、
前記レンズハウジングが前記取り付け開口部及び前記取り付け柱の他の一つを含み、
前記取り付け柱が前記取り付け開口部内に設けられ、
前記レンズハウジングが、前記取り付け柱及び前記取り付け開口部を介して前記補強材に直接接続されてなる請求項1又は2に記載のデジタルカメラモジュール。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/877,816 US7714931B2 (en) | 2004-06-25 | 2004-06-25 | System and method for mounting an image capture device on a flexible substrate |
US10/877,816 | 2004-06-25 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007518234A Division JP2008504739A (ja) | 2004-06-25 | 2005-06-22 | フレキシブル基板上のイメージ撮像デバイスの実装におけるシステムと方法 |
Related Child Applications (1)
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JP2014250352A Division JP5877595B2 (ja) | 2004-06-25 | 2014-12-10 | フレキシブル基板上のイメージ撮像デバイスの実装におけるシステムと方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012235509A JP2012235509A (ja) | 2012-11-29 |
JP2012235509A5 JP2012235509A5 (ja) | 2013-10-10 |
JP5764781B2 true JP5764781B2 (ja) | 2015-08-19 |
Family
ID=35505254
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
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JP2007518234A Pending JP2008504739A (ja) | 2004-06-25 | 2005-06-22 | フレキシブル基板上のイメージ撮像デバイスの実装におけるシステムと方法 |
JP2012158069A Expired - Fee Related JP5764781B2 (ja) | 2004-06-25 | 2012-07-13 | フレキシブル基板上のイメージ撮像デバイスの実装におけるシステムと方法 |
JP2014250352A Expired - Fee Related JP5877595B2 (ja) | 2004-06-25 | 2014-12-10 | フレキシブル基板上のイメージ撮像デバイスの実装におけるシステムと方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007518234A Pending JP2008504739A (ja) | 2004-06-25 | 2005-06-22 | フレキシブル基板上のイメージ撮像デバイスの実装におけるシステムと方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014250352A Expired - Fee Related JP5877595B2 (ja) | 2004-06-25 | 2014-12-10 | フレキシブル基板上のイメージ撮像デバイスの実装におけるシステムと方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7714931B2 (ja) |
EP (1) | EP1774453B1 (ja) |
JP (3) | JP2008504739A (ja) |
CN (1) | CN101432759B (ja) |
AT (1) | ATE542364T1 (ja) |
CA (1) | CA2571345C (ja) |
TW (1) | TWI262710B (ja) |
WO (1) | WO2006012139A2 (ja) |
Cited By (1)
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US11356584B2 (en) | 2016-09-23 | 2022-06-07 | Sony Semiconductor Solutions Corporation | Camera module, production method, and electronic device |
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JP2015080253A (ja) | 2015-04-23 |
JP2008504739A (ja) | 2008-02-14 |
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CA2571345A1 (en) | 2006-02-02 |
TW200603606A (en) | 2006-01-16 |
JP5877595B2 (ja) | 2016-03-08 |
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