JP5744382B2 - 基板処理装置および基板処理方法 - Google Patents
基板処理装置および基板処理方法 Download PDFInfo
- Publication number
- JP5744382B2 JP5744382B2 JP2009108671A JP2009108671A JP5744382B2 JP 5744382 B2 JP5744382 B2 JP 5744382B2 JP 2009108671 A JP2009108671 A JP 2009108671A JP 2009108671 A JP2009108671 A JP 2009108671A JP 5744382 B2 JP5744382 B2 JP 5744382B2
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- wafer
- polishing
- substrate
- transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 252
- 238000012545 processing Methods 0.000 title claims description 80
- 238000003672 processing method Methods 0.000 title claims description 8
- 238000004140 cleaning Methods 0.000 claims description 326
- 238000005498 polishing Methods 0.000 claims description 305
- 238000012546 transfer Methods 0.000 claims description 247
- 230000007246 mechanism Effects 0.000 claims description 168
- 238000001035 drying Methods 0.000 claims description 60
- 238000005406 washing Methods 0.000 claims description 10
- 230000007723 transport mechanism Effects 0.000 claims description 9
- 235000012431 wafers Nutrition 0.000 description 291
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 147
- 230000032258 transport Effects 0.000 description 109
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 92
- 239000007788 liquid Substances 0.000 description 73
- 239000007789 gas Substances 0.000 description 58
- 239000012530 fluid Substances 0.000 description 39
- 230000005587 bubbling Effects 0.000 description 26
- 238000006073 displacement reaction Methods 0.000 description 21
- 238000010586 diagram Methods 0.000 description 18
- 238000012423 maintenance Methods 0.000 description 18
- 239000002002 slurry Substances 0.000 description 18
- 238000003825 pressing Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 16
- 238000009826 distribution Methods 0.000 description 15
- 230000008569 process Effects 0.000 description 15
- 230000006870 function Effects 0.000 description 14
- 230000002093 peripheral effect Effects 0.000 description 14
- 230000033001 locomotion Effects 0.000 description 12
- 238000012544 monitoring process Methods 0.000 description 12
- 230000003028 elevating effect Effects 0.000 description 10
- 230000002829 reductive effect Effects 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910001873 dinitrogen Inorganic materials 0.000 description 6
- 238000000227 grinding Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000013307 optical fiber Substances 0.000 description 5
- 238000005192 partition Methods 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000011144 upstream manufacturing Methods 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000005299 abrasion Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 230000004043 responsiveness Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000009790 rate-determining step (RDS) Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 229910001172 neodymium magnet Inorganic materials 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Priority Applications (13)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009108671A JP5744382B2 (ja) | 2008-07-24 | 2009-04-28 | 基板処理装置および基板処理方法 |
US12/457,175 US8795032B2 (en) | 2008-06-04 | 2009-06-03 | Substrate processing apparatus, substrate processing method, substrate holding mechanism, and substrate holding method |
KR1020090049190A KR101958874B1 (ko) | 2008-06-04 | 2009-06-03 | 기판처리장치, 기판처리방법, 기판 파지기구, 및 기판 파지방법 |
TW103145187A TWI550705B (zh) | 2008-06-04 | 2009-06-04 | 硏磨裝置及硏磨方法 |
TW098118507A TWI550760B (zh) | 2008-06-04 | 2009-06-04 | 基板處理裝置、基板處理方法、基板保持機構及基板保持方法 |
CN200910141394.1A CN101599423B (zh) | 2008-06-04 | 2009-06-04 | 基板处理装置及方法、基板把持机构以及基板把持方法 |
CN201410084660.2A CN103839857B (zh) | 2008-06-04 | 2009-06-04 | 基板处理装置及方法、基板把持机构以及基板把持方法 |
EP20090007434 EP2131387A3 (en) | 2008-06-04 | 2009-06-04 | Substrate processing apparatus, substrate processing method, substrate holding mechanism, and substrate holding method |
US14/309,152 US9358662B2 (en) | 2008-06-04 | 2014-06-19 | Substrate processing apparatus, substrate processing method, substrate holding mechanism, and substrate holding method |
US14/530,589 US9687957B2 (en) | 2008-06-04 | 2014-10-31 | Substrate processing apparatus, substrate processing method, substrate holding mechanism, and substrate holding method |
KR1020160042031A KR101725268B1 (ko) | 2008-06-04 | 2016-04-06 | 기판처리장치, 기판처리방법, 기판 파지기구, 및 기판 파지방법 |
US15/601,575 US10486285B2 (en) | 2008-06-04 | 2017-05-22 | Substrate processing apparatus, substrate processing method, substrate holding mechanism, and substrate holding method |
US16/657,901 US11426834B2 (en) | 2008-06-04 | 2019-10-18 | Substrate processing apparatus, substrate processing method, substrate holding mechanism, and substrate holding method |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008190834 | 2008-07-24 | ||
JP2008190834 | 2008-07-24 | ||
JP2009108671A JP5744382B2 (ja) | 2008-07-24 | 2009-04-28 | 基板処理装置および基板処理方法 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012080426A Division JP5518121B2 (ja) | 2008-07-24 | 2012-03-30 | 基板処理装置および基板処理方法 |
JP2014259713A Division JP6010100B2 (ja) | 2008-07-24 | 2014-12-24 | 基板処理装置および基板処理方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010050436A JP2010050436A (ja) | 2010-03-04 |
JP2010050436A5 JP2010050436A5 (enrdf_load_stackoverflow) | 2012-05-24 |
JP5744382B2 true JP5744382B2 (ja) | 2015-07-08 |
Family
ID=42067251
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009108671A Active JP5744382B2 (ja) | 2008-06-04 | 2009-04-28 | 基板処理装置および基板処理方法 |
JP2012080426A Active JP5518121B2 (ja) | 2008-07-24 | 2012-03-30 | 基板処理装置および基板処理方法 |
JP2014259713A Active JP6010100B2 (ja) | 2008-07-24 | 2014-12-24 | 基板処理装置および基板処理方法 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012080426A Active JP5518121B2 (ja) | 2008-07-24 | 2012-03-30 | 基板処理装置および基板処理方法 |
JP2014259713A Active JP6010100B2 (ja) | 2008-07-24 | 2014-12-24 | 基板処理装置および基板処理方法 |
Country Status (1)
Country | Link |
---|---|
JP (3) | JP5744382B2 (enrdf_load_stackoverflow) |
Families Citing this family (63)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9153464B2 (en) * | 2011-05-31 | 2015-10-06 | Semes Co., Ltd. | Substrate processing apparatus and substrate processing method |
KR101295791B1 (ko) * | 2011-05-31 | 2013-08-09 | 세메스 주식회사 | 기판 처리 설비 및 기판 처리 방법 |
US9530676B2 (en) | 2011-06-01 | 2016-12-27 | Ebara Corporation | Substrate processing apparatus, substrate transfer method and substrate transfer device |
JP5689367B2 (ja) * | 2011-06-01 | 2015-03-25 | 株式会社荏原製作所 | 基板搬送方法および基板搬送機 |
JP5712061B2 (ja) | 2011-06-16 | 2015-05-07 | 株式会社荏原製作所 | 基板処理方法及び基板処理ユニット |
TWI639485B (zh) | 2012-01-31 | 2018-11-01 | 日商荏原製作所股份有限公司 | Substrate holding device, polishing device, and polishing method |
JP5922965B2 (ja) * | 2012-03-29 | 2016-05-24 | 株式会社荏原製作所 | 基板保持装置、研磨装置、および研磨方法 |
CN103240244A (zh) * | 2012-02-02 | 2013-08-14 | 林进诚 | 表面清洁装置与表面清洁方法 |
JP5866227B2 (ja) * | 2012-02-23 | 2016-02-17 | 株式会社荏原製作所 | 基板洗浄方法 |
CN103367105B (zh) * | 2012-03-26 | 2016-08-10 | 上海华虹宏力半导体制造有限公司 | 一种笔形海绵固定装置 |
JP5941763B2 (ja) | 2012-06-15 | 2016-06-29 | 株式会社荏原製作所 | 研磨方法 |
JP5905359B2 (ja) | 2012-07-23 | 2016-04-20 | 株式会社荏原製作所 | 圧力制御装置および該圧力制御装置を備えた研磨装置 |
JP6055648B2 (ja) * | 2012-10-26 | 2016-12-27 | 株式会社荏原製作所 | 研磨装置及び研磨方法 |
JP6031426B2 (ja) * | 2012-11-02 | 2016-11-24 | 株式会社荏原製作所 | 研磨装置及び研磨方法 |
JP6053528B2 (ja) * | 2013-01-11 | 2016-12-27 | 株式会社荏原製作所 | 基板把持装置 |
JP6009959B2 (ja) * | 2013-02-06 | 2016-10-19 | 株式会社荏原製作所 | 研磨装置に使用される液体の流量制御装置 |
WO2015030050A1 (ja) * | 2013-08-27 | 2015-03-05 | 株式会社荏原製作所 | ポリッシング方法 |
JP6140051B2 (ja) * | 2013-10-23 | 2017-05-31 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
US9662761B2 (en) | 2013-12-02 | 2017-05-30 | Ebara Corporation | Polishing apparatus |
JP6092086B2 (ja) * | 2013-12-02 | 2017-03-08 | 株式会社荏原製作所 | 研磨装置 |
JP6085572B2 (ja) | 2014-01-09 | 2017-02-22 | 株式会社荏原製作所 | 圧力制御装置および該圧力制御装置を備えた研磨装置 |
KR101610003B1 (ko) * | 2014-03-03 | 2016-04-07 | 주식회사 케이씨텍 | 화학 기계적 연마 공정이 행해진 웨이퍼의 다단계 세정 장치 |
JP6159282B2 (ja) | 2014-03-27 | 2017-07-05 | 株式会社荏原製作所 | 基板処理装置、および基板処理装置の配管洗浄方法 |
JP2015188955A (ja) | 2014-03-27 | 2015-11-02 | 株式会社荏原製作所 | 研磨装置 |
JP6336893B2 (ja) * | 2014-11-11 | 2018-06-06 | 株式会社荏原製作所 | 研磨装置 |
JP2015193065A (ja) * | 2014-03-31 | 2015-11-05 | 株式会社荏原製作所 | 研磨装置および研磨方法 |
TWI658899B (zh) | 2014-03-31 | 2019-05-11 | 日商荏原製作所股份有限公司 | 研磨裝置及研磨方法 |
US10183374B2 (en) | 2014-08-26 | 2019-01-22 | Ebara Corporation | Buffing apparatus, and substrate processing apparatus |
SG10201810852TA (en) | 2014-10-03 | 2019-01-30 | Ebara Corp | Substrate processing apparatus and processing method |
SG10201508329UA (en) | 2014-10-10 | 2016-05-30 | Ebara Corp | Buffing apparatus and substrate processing apparatus |
JP6335103B2 (ja) * | 2014-11-14 | 2018-05-30 | 株式会社荏原製作所 | 基板保持装置 |
JP6313196B2 (ja) | 2014-11-20 | 2018-04-18 | 株式会社荏原製作所 | 研磨面洗浄装置、研磨装置、および研磨面洗浄装置の製造方法 |
JP6486757B2 (ja) | 2015-04-23 | 2019-03-20 | 株式会社荏原製作所 | 基板処理装置 |
JP6462559B2 (ja) * | 2015-05-15 | 2019-01-30 | 東京エレクトロン株式会社 | 基板処理装置 |
US10553421B2 (en) * | 2015-05-15 | 2020-02-04 | Tokyo Electron Limited | Substrate processing apparatus, substrate processing method and storage medium |
KR102346786B1 (ko) * | 2015-07-03 | 2022-01-04 | 주식회사 케이씨텍 | 화학 기계적 연마 시스템의 웨이퍼 로딩 장치 |
JP6721967B2 (ja) | 2015-11-17 | 2020-07-15 | 株式会社荏原製作所 | バフ処理装置および基板処理装置 |
JP6723055B2 (ja) | 2016-04-04 | 2020-07-15 | 株式会社荏原製作所 | 基板処理装置および基板有無確認方法 |
JP6727044B2 (ja) * | 2016-06-30 | 2020-07-22 | 株式会社荏原製作所 | 基板処理装置 |
JP6987184B2 (ja) * | 2016-06-30 | 2021-12-22 | 株式会社荏原製作所 | 基板処理装置 |
JP6717691B2 (ja) | 2016-07-06 | 2020-07-01 | 株式会社荏原製作所 | 基板処理装置 |
JP6895341B2 (ja) | 2017-08-10 | 2021-06-30 | 株式会社荏原製作所 | 基板処理装置 |
JP6499330B2 (ja) * | 2018-01-05 | 2019-04-10 | 株式会社荏原製作所 | 研磨装置および研磨方法 |
WO2020003995A1 (ja) * | 2018-06-26 | 2020-01-02 | 東京エレクトロン株式会社 | 加工装置、加工方法及びコンピュータ記憶媒体 |
JP7160725B2 (ja) | 2019-03-06 | 2022-10-25 | 株式会社荏原製作所 | 基板処理装置 |
JP7143251B2 (ja) | 2019-05-30 | 2022-09-28 | 株式会社荏原製作所 | ダンパー制御システムおよびダンパー制御方法 |
JP7138602B2 (ja) | 2019-06-20 | 2022-09-16 | 株式会社荏原製作所 | 液体供給装置の液抜き方法、液体供給装置 |
SG10202006423VA (en) | 2019-07-12 | 2021-02-25 | Ebara Corp | Substrate processing apparatus and storage medium |
JP2021013987A (ja) * | 2019-07-12 | 2021-02-12 | 株式会社荏原製作所 | 基板処理システムおよび記録媒体 |
US11948811B2 (en) * | 2019-12-26 | 2024-04-02 | Ebara Corporation | Cleaning apparatus and polishing apparatus |
WO2021251050A1 (ja) * | 2020-06-09 | 2021-12-16 | 株式会社荏原製作所 | 基板処理装置、プログラムを記録したコンピュータ読み取り可能な記録媒体、および基板処理方法 |
JP7394821B2 (ja) * | 2020-06-30 | 2023-12-08 | 株式会社荏原製作所 | 基板処理装置 |
JP7660446B2 (ja) * | 2021-06-29 | 2025-04-11 | 株式会社荏原製作所 | 基板乾燥装置 |
JP2023006718A (ja) | 2021-06-30 | 2023-01-18 | 株式会社荏原製作所 | 搬送装置、および基板処理装置 |
JP2023046631A (ja) * | 2021-09-24 | 2023-04-05 | 株式会社Screenホールディングス | 基板処理装置 |
JP7706322B2 (ja) * | 2021-10-11 | 2025-07-11 | 株式会社荏原製作所 | ハンド、搬送装置、および基板処理装置 |
JP7663472B2 (ja) * | 2021-10-11 | 2025-04-16 | 株式会社荏原製作所 | ハンド、搬送装置、および基板処理装置 |
KR20230051753A (ko) | 2021-10-11 | 2023-04-18 | 가부시키가이샤 에바라 세이사꾸쇼 | 핸드, 반송 장치, 및 기판 처리 장치 |
JP7653342B2 (ja) * | 2021-10-11 | 2025-03-28 | 株式会社荏原製作所 | ハンド、搬送装置、および基板処理装置 |
JP2023074598A (ja) | 2021-11-18 | 2023-05-30 | 株式会社荏原製作所 | 基板処理方法および基板処理装置 |
CN115476237B (zh) * | 2022-09-30 | 2024-03-08 | 浙江海纳半导体股份有限公司 | 一种单晶硅片自动翻面磨削设备 |
CN115892839B (zh) * | 2022-11-23 | 2025-05-13 | 合肥中亚传感器有限责任公司 | 一种传感器转运装置 |
US20240363372A1 (en) | 2023-04-28 | 2024-10-31 | Ebara Corporation | Substrate processing apparatus |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1050794A (ja) * | 1996-08-01 | 1998-02-20 | Dainippon Screen Mfg Co Ltd | 基板処理装置および方法 |
JPH10113863A (ja) * | 1996-10-11 | 1998-05-06 | Sony Corp | 研磨用ガイド装置の位置決め方法及びその装置並びに薄板状基板の研磨方法 |
JP3735175B2 (ja) * | 1997-03-04 | 2006-01-18 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JPH1116983A (ja) * | 1997-06-24 | 1999-01-22 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理装置における搬送制御方法 |
JP3934745B2 (ja) * | 1997-06-30 | 2007-06-20 | 住友精密工業株式会社 | 基板授受ユニット及びこれを用いたウエット処理装置 |
JP4127346B2 (ja) * | 1999-08-20 | 2008-07-30 | 株式会社荏原製作所 | ポリッシング装置及び方法 |
WO2001084621A1 (en) * | 2000-04-27 | 2001-11-08 | Ebara Corporation | Rotation holding device and semiconductor substrate processing device |
JP3916846B2 (ja) * | 2000-05-26 | 2007-05-23 | 株式会社荏原製作所 | 基板研磨装置及び基板研磨方法 |
JP2002110609A (ja) * | 2000-10-02 | 2002-04-12 | Tokyo Electron Ltd | 洗浄処理装置 |
JP2003051481A (ja) * | 2001-08-07 | 2003-02-21 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
WO2004095516A2 (en) * | 2003-04-21 | 2004-11-04 | Inopla Inc. | Apparatus and method for polishing semiconductor wafers using one or more polishing surfaces |
JP4342921B2 (ja) * | 2003-12-09 | 2009-10-14 | 東京エレクトロン株式会社 | 基板処理装置の制御方法及び基板処理装置 |
US7290976B2 (en) * | 2005-06-28 | 2007-11-06 | Applied Materials, Inc. | Semiconductor substrate processing apparatus with a passive substrate gripper |
JP4682855B2 (ja) * | 2006-01-30 | 2011-05-11 | 日本電気株式会社 | 不正サイトへの誘導防止システム、方法、プログラム、及び、メール受信装置 |
JP2008042099A (ja) * | 2006-08-09 | 2008-02-21 | Tokyo Seimitsu Co Ltd | 洗浄装置 |
JP4744426B2 (ja) * | 2006-12-27 | 2011-08-10 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
JP4660494B2 (ja) * | 2007-02-15 | 2011-03-30 | 株式会社荏原製作所 | 研磨カートリッジ |
-
2009
- 2009-04-28 JP JP2009108671A patent/JP5744382B2/ja active Active
-
2012
- 2012-03-30 JP JP2012080426A patent/JP5518121B2/ja active Active
-
2014
- 2014-12-24 JP JP2014259713A patent/JP6010100B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP5518121B2 (ja) | 2014-06-11 |
JP2015065478A (ja) | 2015-04-09 |
JP2012129559A (ja) | 2012-07-05 |
JP2010050436A (ja) | 2010-03-04 |
JP6010100B2 (ja) | 2016-10-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6010100B2 (ja) | 基板処理装置および基板処理方法 | |
US11426834B2 (en) | Substrate processing apparatus, substrate processing method, substrate holding mechanism, and substrate holding method | |
KR101725268B1 (ko) | 기판처리장치, 기판처리방법, 기판 파지기구, 및 기판 파지방법 | |
KR102432238B1 (ko) | 기판 처리 장치 | |
CN101599423B (zh) | 基板处理装置及方法、基板把持机构以及基板把持方法 | |
US7632378B2 (en) | Polishing apparatus | |
WO2021248951A1 (zh) | 基板减薄方法、基板减薄设备及其操作方法 | |
JP4127346B2 (ja) | ポリッシング装置及び方法 | |
JP2014082470A (ja) | 基板処理装置 | |
CN112289703A (zh) | 基板清洗装置、基板处理装置及基板清洗方法 | |
US11541502B2 (en) | Substrate processing apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120330 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120330 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130702 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130902 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140304 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20140930 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20141224 Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141224 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20150213 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150421 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150430 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5744382 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |