JP6140051B2 - 研磨方法および研磨装置 - Google Patents
研磨方法および研磨装置 Download PDFInfo
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- JP6140051B2 JP6140051B2 JP2013220327A JP2013220327A JP6140051B2 JP 6140051 B2 JP6140051 B2 JP 6140051B2 JP 2013220327 A JP2013220327 A JP 2013220327A JP 2013220327 A JP2013220327 A JP 2013220327A JP 6140051 B2 JP6140051 B2 JP 6140051B2
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- 238000005498 polishing Methods 0.000 title claims description 481
- 238000000034 method Methods 0.000 title claims description 35
- 239000007788 liquid Substances 0.000 claims description 256
- 239000000758 substrate Substances 0.000 claims description 95
- 230000007246 mechanism Effects 0.000 claims description 31
- 239000002002 slurry Substances 0.000 claims description 30
- 239000011362 coarse particle Substances 0.000 description 53
- 238000004140 cleaning Methods 0.000 description 38
- 230000008569 process Effects 0.000 description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- 239000012530 fluid Substances 0.000 description 10
- 230000004048 modification Effects 0.000 description 10
- 238000012986 modification Methods 0.000 description 10
- 239000006061 abrasive grain Substances 0.000 description 7
- 238000003825 pressing Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/12—Devices for exhausting mist of oil or coolant; Devices for collecting or recovering materials resulting from grinding or polishing, e.g. of precious metals, precious stones, diamonds or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
さらに、本発明によれば、研磨液をフィルタに間欠的に通過させることにより、フィルタに捕捉された粗大粒子を除去することができる。したがって、粗大粒子によって基板の表面にスクラッチが発生することを防止することができる。
さらに本発明によれば、大流量の研磨液をフィルタに連続的に通過させることにより、フィルタに捕捉された粗大粒子を除去することができる。したがって、粗大粒子によって基板の表面にスクラッチが発生することを防止することができる。
図1は研磨装置の斜視図である。図1に示すように、研磨装置は、研磨パッド1を支持する研磨テーブル2と、ウェハなどの基板Wを研磨パッド1に押し付けるトップリング3と、研磨パッド1に研磨液(スラリー)を供給するための研磨液供給機構4とを備えている。
2 研磨テーブル
3 トップリング
4 研磨液供給機構
5 テーブル軸
6 テーブルモータ
7 トップリングシャフト
8 トップリングアーム
10 スラリー供給ノズル
11 ノズル旋回軸
12 移送管
14 フィルタ
16 レギュレータ
18 流量計
20 開閉弁
22 制御部
24 ドレッシング装置
25 純水供給ノズル
26 ドレッサ
27 ドレッサアーム
28 ドレッサ旋回軸
30 ドレイン口
32 圧力計
40 アトマイザ
49 支持軸
Claims (8)
- 基板を研磨する研磨方法において、
研磨液の供給が開始された後、研磨液の流量および圧力のうちのいずれか一方である前記研磨液の物理量が所定の設定値に達するまで前記物理量を所定の増加率で増加させながら、フィルタに前記研磨液を通過させ、
前記研磨液の物理量が前記所定の設定値に達した後、前記研磨液の物理量が一定に維持された状態で、前記フィルタを通過した前記研磨液を研磨パッド上に供給しながら前記研磨パッド上で前記基板を研磨することを特徴とする研磨方法。 - 前記研磨液の物理量が前記所定の設定値に達するまで、前記フィルタを通過した前記研磨液を前記研磨パッド上に供給することを特徴とする請求項1に記載の研磨方法。
- 前記研磨液の物理量が前記所定の設定値に達するまで、前記フィルタを通過した前記研磨液を前記研磨パッドの外に排出する、または回収することを特徴とする請求項1に記載の研磨方法。
- 前記研磨液の物理量が前記所定の設定値に達するまで、前記研磨液の物理量を段階的に、または二次曲線に沿って増加させることを特徴とする請求項1乃至3のいずれか一項に記載の研磨方法。
- 研磨パッドを支持する研磨テーブルと、
基板を前記研磨パッドに押し付けるトップリングと、
前記研磨パッドに研磨液を供給する研磨液供給機構とを備え、
前記研磨液供給機構は、
前記研磨液を前記研磨パッド上に供給するスラリー供給ノズルと、
前記スラリー供給ノズルに接続されたフィルタと、
前記フィルタを通過する前記研磨液の流量および圧力のうちのいずれか一方である前記研磨液の物理量を調整するレギュレータとを備え、
研磨液の供給が開始された後、前記レギュレータは、前記物理量が所定の設定値に達するまで前記物理量を所定の増加率で増加させ、
前記物理量が前記所定の設定値に達した後、前記物理量が一定に維持された状態で、前記研磨液供給機構が前記研磨液を前記研磨パッドに供給しながら、前記トップリングは前記基板を前記研磨パッドに押し付けて前記基板を研磨することを特徴とする研磨装置。 - 前記物理量が前記所定の設定値に達するまで、前記スラリー供給ノズルは前記フィルタを通過した前記研磨液を前記研磨パッド上に供給することを特徴とする請求項5に記載の研磨装置。
- 前記物理量が前記所定の設定値に達するまで、前記スラリー供給ノズルは前記フィルタを通過した前記研磨液を前記研磨パッドの外に排出するように動作することを特徴とする請求項5に記載の研磨装置。
- 前記レギュレータは、前記物理量が前記所定の設定値に達するまで前記物理量を段階的に、または二次曲線に沿って増加させることを特徴とする請求項5乃至7のいずれか一項に記載の研磨装置。
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013220327A JP6140051B2 (ja) | 2013-10-23 | 2013-10-23 | 研磨方法および研磨装置 |
KR1020140139033A KR102189477B1 (ko) | 2013-10-23 | 2014-10-15 | 연마 방법 및 연마 장치 |
US14/520,242 US20150140907A1 (en) | 2013-10-23 | 2014-10-21 | Polishing method and polishing apparatus |
SG10201707376TA SG10201707376TA (en) | 2013-10-23 | 2014-10-21 | Polishing method and polishing apparatus |
TW103136252A TWI645938B (zh) | 2013-10-23 | 2014-10-21 | 研磨方法及研磨裝置 |
SG10201406812YA SG10201406812YA (en) | 2013-10-23 | 2014-10-21 | Polishing method and polishing apparatus |
CN201410566888.5A CN104552008B (zh) | 2013-10-23 | 2014-10-22 | 研磨方法及研磨装置 |
JP2017089198A JP6367419B2 (ja) | 2013-10-23 | 2017-04-28 | 研磨方法および研磨装置 |
US15/898,028 US11192216B2 (en) | 2013-10-23 | 2018-02-15 | Polishing method and polishing apparatus |
KR1020200167354A KR102274731B1 (ko) | 2013-10-23 | 2020-12-03 | 연마 방법 및 연마 장치 |
Applications Claiming Priority (1)
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JP2013220327A JP6140051B2 (ja) | 2013-10-23 | 2013-10-23 | 研磨方法および研磨装置 |
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JP2017089198A Division JP6367419B2 (ja) | 2013-10-23 | 2017-04-28 | 研磨方法および研磨装置 |
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JP2015082602A JP2015082602A (ja) | 2015-04-27 |
JP6140051B2 true JP6140051B2 (ja) | 2017-05-31 |
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JP2013220327A Active JP6140051B2 (ja) | 2013-10-23 | 2013-10-23 | 研磨方法および研磨装置 |
JP2017089198A Active JP6367419B2 (ja) | 2013-10-23 | 2017-04-28 | 研磨方法および研磨装置 |
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Country Status (6)
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US (2) | US20150140907A1 (ja) |
JP (2) | JP6140051B2 (ja) |
KR (2) | KR102189477B1 (ja) |
CN (1) | CN104552008B (ja) |
SG (2) | SG10201406812YA (ja) |
TW (1) | TWI645938B (ja) |
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US9453505B2 (en) * | 2012-06-07 | 2016-09-27 | Asco Power Technologies, L.P. | Methods and systems for monitoring a power supply for a fire pump motor |
JP5626378B2 (ja) * | 2013-01-10 | 2014-11-19 | 住友金属鉱山株式会社 | 脱亜鉛プラントの操業方法 |
US9278423B2 (en) * | 2013-10-08 | 2016-03-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | CMP slurry particle breakup |
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KR20200139655A (ko) | 2020-12-14 |
TWI645938B (zh) | 2019-01-01 |
KR102189477B1 (ko) | 2020-12-11 |
US11192216B2 (en) | 2021-12-07 |
JP2017132035A (ja) | 2017-08-03 |
US20180169831A1 (en) | 2018-06-21 |
JP6367419B2 (ja) | 2018-08-01 |
US20150140907A1 (en) | 2015-05-21 |
CN104552008A (zh) | 2015-04-29 |
JP2015082602A (ja) | 2015-04-27 |
KR102274731B1 (ko) | 2021-07-08 |
CN104552008B (zh) | 2018-04-06 |
KR20150047096A (ko) | 2015-05-04 |
SG10201707376TA (en) | 2017-10-30 |
SG10201406812YA (en) | 2015-05-28 |
TW201529233A (zh) | 2015-08-01 |
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