JP5725698B2 - アモルファス酸化物半導体及び該アモルファス酸化物半導体を用いた薄膜トランジスタ - Google Patents

アモルファス酸化物半導体及び該アモルファス酸化物半導体を用いた薄膜トランジスタ Download PDF

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Publication number
JP5725698B2
JP5725698B2 JP2009190168A JP2009190168A JP5725698B2 JP 5725698 B2 JP5725698 B2 JP 5725698B2 JP 2009190168 A JP2009190168 A JP 2009190168A JP 2009190168 A JP2009190168 A JP 2009190168A JP 5725698 B2 JP5725698 B2 JP 5725698B2
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oxide semiconductor
amorphous oxide
thin film
film
film transistor
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JP2010080936A5 (enExample
JP2010080936A (ja
Inventor
林　享
享 林
秀之 大村
秀之 大村
日出也 雲見
日出也 雲見
有三 重里
有三 重里
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies

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  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
JP2009190168A 2008-08-28 2009-08-19 アモルファス酸化物半導体及び該アモルファス酸化物半導体を用いた薄膜トランジスタ Active JP5725698B2 (ja)

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JP2009190168A JP5725698B2 (ja) 2008-08-28 2009-08-19 アモルファス酸化物半導体及び該アモルファス酸化物半導体を用いた薄膜トランジスタ

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JP2008219888 2008-08-28
JP2008219888 2008-08-28
JP2009190168A JP5725698B2 (ja) 2008-08-28 2009-08-19 アモルファス酸化物半導体及び該アモルファス酸化物半導体を用いた薄膜トランジスタ

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JP2010080936A JP2010080936A (ja) 2010-04-08
JP2010080936A5 JP2010080936A5 (enExample) 2012-09-13
JP5725698B2 true JP5725698B2 (ja) 2015-05-27

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US (3) US8129718B2 (enExample)
EP (1) EP2159844B1 (enExample)
JP (1) JP5725698B2 (enExample)
KR (1) KR101194255B1 (enExample)
CN (2) CN101661952B (enExample)
AT (1) ATE534146T1 (enExample)

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