JP5354862B2 - アモルファス絶縁体膜及び薄膜トランジスタ - Google Patents
アモルファス絶縁体膜及び薄膜トランジスタ Download PDFInfo
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- JP5354862B2 JP5354862B2 JP2007037994A JP2007037994A JP5354862B2 JP 5354862 B2 JP5354862 B2 JP 5354862B2 JP 2007037994 A JP2007037994 A JP 2007037994A JP 2007037994 A JP2007037994 A JP 2007037994A JP 5354862 B2 JP5354862 B2 JP 5354862B2
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- 239000012212 insulator Substances 0.000 title claims abstract description 70
- 239000010408 film Substances 0.000 title claims description 172
- 239000010409 thin film Substances 0.000 title claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 238000004544 sputter deposition Methods 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 13
- 230000005684 electric field Effects 0.000 claims description 7
- 239000000758 substrate Substances 0.000 description 28
- 238000000034 method Methods 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 18
- 229910052814 silicon oxide Inorganic materials 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 229910004298 SiO 2 Inorganic materials 0.000 description 14
- 239000007789 gas Substances 0.000 description 11
- 238000009413 insulation Methods 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 239000011521 glass Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000004876 x-ray fluorescence Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000000560 X-ray reflectometry Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
- Physical Vapour Deposition (AREA)
Description
Applied Physics Letters, Volume 89, 112123-1 〜 3ページ
次に、本発明を実験例によりさらに詳細に説明する。本発明者らは、上記従来の課題を解決するため、スパッタ法によるシリコン酸化物アモルファス絶縁体膜の研究を行い、特に絶縁体膜中のAr量と絶縁特性の相関を調べた。スパッタ装置は平行平板型rfマグネトロンスパッタ装置を用い、ターゲットとして直径75mmのSiO2板を用いた。成膜時の設定基板温度は室温設定で行った。
実施例1では、まず、ガラス基板上にそれぞれ5nm、40nm、5nmの厚さのTi,Au,Ti積層膜を形成し下部電極とした。その上にrfマグネトロンスパッタ装置により厚さ100nmのSiO2膜を作製した。成膜条件を以下に記す。基板はターゲット中心鉛直方向から約55度傾いた方向に基板中心があり、ターゲット中心から基板中心までの距離が約130mmになる位置に配置した。
実施例2では、本発明のアモルファス絶縁体膜を用いて図3に示すボトムゲート型TFT素子を作製した。
2 下部電極
3 SiO2膜
4 上部電極
11 ガラス電極
12 ゲート電極
13 ゲート絶縁膜
14 チャネル層
15 ドレイン電極
16 ソース電極
Claims (7)
- シリコン(Si)酸化物を含むアモルファス絶縁体膜であって、前記絶縁体膜中にArが含有されており、該Ar含有量がSiに対して原子数比で3原子%以上16.2原子%以下であることを特徴とするアモルファス絶縁体膜。
- 前記絶縁体膜の電流電圧特性において、絶縁体膜に1MV/cmの電界を印加した際の電流密度が1×10-6A/cm2以下であることを特徴とする、請求項1に記載のアモルファス絶縁体膜。
- 前記絶縁体膜の電流電圧特性において、絶縁体膜に1MV/cmの電界を印加した際の電流密度が3×10-7A/cm2以下であることを特徴とする、請求項1又は2に記載のアモルファス絶縁体膜。
- 前記アモルファス絶縁体膜はスパッタ法で製造されていることを特徴とする請求項1乃至3のいずれか1項に記載のアモルファス絶縁体膜。
- 請求項1乃至4のいずれか1項に記載のアモルファス絶縁体膜をゲート絶縁膜として用いることを特徴とする薄膜トランジスタ。
- チャネルが酸化物半導体であることを特徴とする請求項5に記載の薄膜トランジスタ。
- チャネルがアモルファス酸化物半導体であることを特徴とする請求項5又は6に記載の薄膜トランジスタ。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007037994A JP5354862B2 (ja) | 2007-02-19 | 2007-02-19 | アモルファス絶縁体膜及び薄膜トランジスタ |
US12/522,371 US8044402B2 (en) | 2007-02-19 | 2008-02-02 | Amorphous insulator film and thin-film transistor |
CN200880005092.5A CN101611474B (zh) | 2007-02-19 | 2008-02-04 | 非晶绝缘体膜和薄膜晶体管 |
EP08710970.8A EP2126966B1 (en) | 2007-02-19 | 2008-02-04 | Thin-film transistor with amorphous insulator film |
PCT/JP2008/052091 WO2008102651A1 (en) | 2007-02-19 | 2008-02-04 | Amorphous insulator film and thin-film transistor |
TW097105571A TWI377605B (en) | 2007-02-19 | 2008-02-18 | Amorphous insulator film and thin-film transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007037994A JP5354862B2 (ja) | 2007-02-19 | 2007-02-19 | アモルファス絶縁体膜及び薄膜トランジスタ |
Publications (2)
Publication Number | Publication Date |
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JP2008205098A JP2008205098A (ja) | 2008-09-04 |
JP5354862B2 true JP5354862B2 (ja) | 2013-11-27 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007037994A Expired - Fee Related JP5354862B2 (ja) | 2007-02-19 | 2007-02-19 | アモルファス絶縁体膜及び薄膜トランジスタ |
Country Status (6)
Country | Link |
---|---|
US (1) | US8044402B2 (ja) |
EP (1) | EP2126966B1 (ja) |
JP (1) | JP5354862B2 (ja) |
CN (1) | CN101611474B (ja) |
TW (1) | TWI377605B (ja) |
WO (1) | WO2008102651A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5305630B2 (ja) | 2006-12-05 | 2013-10-02 | キヤノン株式会社 | ボトムゲート型薄膜トランジスタの製造方法及び表示装置の製造方法 |
JP5213422B2 (ja) * | 2007-12-04 | 2013-06-19 | キヤノン株式会社 | 絶縁層を有する酸化物半導体素子およびそれを用いた表示装置 |
JP5467728B2 (ja) * | 2008-03-14 | 2014-04-09 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタおよびその製造方法 |
KR20090126766A (ko) * | 2008-06-05 | 2009-12-09 | 삼성전자주식회사 | 박막 트랜지스터 표시판 |
US8129718B2 (en) | 2008-08-28 | 2012-03-06 | Canon Kabushiki Kaisha | Amorphous oxide semiconductor and thin film transistor using the same |
US8450144B2 (en) * | 2009-03-26 | 2013-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP2010245366A (ja) | 2009-04-08 | 2010-10-28 | Fujifilm Corp | 電子素子及びその製造方法、並びに表示装置 |
EP2486569B1 (en) | 2009-10-09 | 2019-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Shift register and display device |
JP2012033836A (ja) | 2010-08-03 | 2012-02-16 | Canon Inc | トップゲート型薄膜トランジスタ及びこれを備えた表示装置 |
JP2012119474A (ja) * | 2010-11-30 | 2012-06-21 | Teijin Ltd | 薄膜トランジスタ、及びその製造方法 |
KR101884824B1 (ko) | 2011-09-07 | 2018-08-03 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 그 제조 방법 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0290568A (ja) | 1988-09-28 | 1990-03-30 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜トランジスタの製造方法 |
JPH02258614A (ja) * | 1989-03-31 | 1990-10-19 | Fuji Photo Film Co Ltd | 低アルゴン含有SiO↓2析着膜とその製造方法 |
EP0445535B1 (en) * | 1990-02-06 | 1995-02-01 | Sel Semiconductor Energy Laboratory Co., Ltd. | Method of forming an oxide film |
JP2652267B2 (ja) * | 1990-10-29 | 1997-09-10 | 株式会社半導体エネルギー研究所 | 絶縁ゲイト型半導体装置 |
US5840600A (en) * | 1994-08-31 | 1998-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device and apparatus for treating semiconductor device |
JP3445187B2 (ja) * | 1999-08-03 | 2003-09-08 | キヤノン株式会社 | 半導体素子の欠陥補償方法 |
US6429097B1 (en) * | 2000-05-22 | 2002-08-06 | Sharp Laboratories Of America, Inc. | Method to sputter silicon films |
JP2002206168A (ja) * | 2000-10-24 | 2002-07-26 | Canon Inc | シリコン系薄膜の形成方法、シリコン系半導体層の形成方法及び光起電力素子 |
US6858308B2 (en) * | 2001-03-12 | 2005-02-22 | Canon Kabushiki Kaisha | Semiconductor element, and method of forming silicon-based film |
JP2003007629A (ja) * | 2001-04-03 | 2003-01-10 | Canon Inc | シリコン系膜の形成方法、シリコン系膜および半導体素子 |
JP2004289034A (ja) * | 2003-03-25 | 2004-10-14 | Canon Inc | 酸化亜鉛膜の処理方法、それを用いた光起電力素子の製造方法 |
US7145174B2 (en) * | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
JP2005285830A (ja) * | 2004-03-26 | 2005-10-13 | Dainippon Printing Co Ltd | ゲート絶縁膜の形成方法及び薄膜トランジスタの製造方法並びに薄膜トランジスタ |
JP5126729B2 (ja) * | 2004-11-10 | 2013-01-23 | キヤノン株式会社 | 画像表示装置 |
JP5037808B2 (ja) * | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
JP4560505B2 (ja) * | 2005-11-08 | 2010-10-13 | キヤノン株式会社 | 電界効果型トランジスタ |
-
2007
- 2007-02-19 JP JP2007037994A patent/JP5354862B2/ja not_active Expired - Fee Related
-
2008
- 2008-02-02 US US12/522,371 patent/US8044402B2/en not_active Expired - Fee Related
- 2008-02-04 WO PCT/JP2008/052091 patent/WO2008102651A1/en active Application Filing
- 2008-02-04 EP EP08710970.8A patent/EP2126966B1/en not_active Not-in-force
- 2008-02-04 CN CN200880005092.5A patent/CN101611474B/zh not_active Expired - Fee Related
- 2008-02-18 TW TW097105571A patent/TWI377605B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN101611474B (zh) | 2014-12-03 |
TW200901291A (en) | 2009-01-01 |
US8044402B2 (en) | 2011-10-25 |
JP2008205098A (ja) | 2008-09-04 |
EP2126966B1 (en) | 2015-04-08 |
US20100051947A1 (en) | 2010-03-04 |
TWI377605B (en) | 2012-11-21 |
EP2126966A1 (en) | 2009-12-02 |
WO2008102651A1 (en) | 2008-08-28 |
CN101611474A (zh) | 2009-12-23 |
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