JP5618963B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5618963B2
JP5618963B2 JP2011234814A JP2011234814A JP5618963B2 JP 5618963 B2 JP5618963 B2 JP 5618963B2 JP 2011234814 A JP2011234814 A JP 2011234814A JP 2011234814 A JP2011234814 A JP 2011234814A JP 5618963 B2 JP5618963 B2 JP 5618963B2
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JP
Japan
Prior art keywords
semiconductor layer
semiconductor
semiconductor substrate
semiconductor device
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011234814A
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English (en)
Japanese (ja)
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JP2013093448A (ja
JP2013093448A5 (enExample
Inventor
山本　剛司
剛司 山本
河本　厚信
厚信 河本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2011234814A priority Critical patent/JP5618963B2/ja
Priority to US13/534,695 priority patent/US8536655B2/en
Priority to DE102012218765.0A priority patent/DE102012218765B4/de
Priority to CN201210416161.XA priority patent/CN103077946B/zh
Publication of JP2013093448A publication Critical patent/JP2013093448A/ja
Publication of JP2013093448A5 publication Critical patent/JP2013093448A5/ja
Application granted granted Critical
Publication of JP5618963B2 publication Critical patent/JP5618963B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP2011234814A 2011-10-26 2011-10-26 半導体装置 Active JP5618963B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011234814A JP5618963B2 (ja) 2011-10-26 2011-10-26 半導体装置
US13/534,695 US8536655B2 (en) 2011-10-26 2012-06-27 Semiconductor device with power element and circuit element formed within the same semiconductor substrate
DE102012218765.0A DE102012218765B4 (de) 2011-10-26 2012-10-15 Halbleitervorrichtung mit innerhalb desselben Halbleitersubstrats ausgebildetem Leistungselement und Schaltungselement
CN201210416161.XA CN103077946B (zh) 2011-10-26 2012-10-26 在同一半导体衬底内形成电力和电路元件的半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011234814A JP5618963B2 (ja) 2011-10-26 2011-10-26 半導体装置

Publications (3)

Publication Number Publication Date
JP2013093448A JP2013093448A (ja) 2013-05-16
JP2013093448A5 JP2013093448A5 (enExample) 2014-01-30
JP5618963B2 true JP5618963B2 (ja) 2014-11-05

Family

ID=48084554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011234814A Active JP5618963B2 (ja) 2011-10-26 2011-10-26 半導体装置

Country Status (4)

Country Link
US (1) US8536655B2 (enExample)
JP (1) JP5618963B2 (enExample)
CN (1) CN103077946B (enExample)
DE (1) DE102012218765B4 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9391448B2 (en) * 2013-09-17 2016-07-12 The Boeing Company High current event mitigation circuit
EP3151402B1 (en) * 2014-05-30 2022-10-05 Mitsubishi Electric Corporation Power-semiconductor element driving circuit
CN108431945B (zh) * 2015-12-28 2022-06-10 罗姆股份有限公司 半导体设备
JP7227117B2 (ja) * 2019-11-08 2023-02-21 株式会社東芝 半導体装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4933573A (en) * 1987-09-18 1990-06-12 Fuji Electric Co., Ltd. Semiconductor integrated circuit
JPH06350032A (ja) 1993-06-08 1994-12-22 Toshiba Corp 半導体装置の配線構体
US5467050A (en) * 1994-01-04 1995-11-14 Texas Instruments Incorporated Dynamic biasing circuit for semiconductor device
JP3400853B2 (ja) * 1994-04-27 2003-04-28 三菱電機株式会社 半導体装置
JP3532276B2 (ja) * 1995-01-06 2004-05-31 株式会社ルネサステクノロジ 基板バイアス回路
JP4128700B2 (ja) * 1999-09-08 2008-07-30 ローム株式会社 誘導性負荷駆動回路
JP4607291B2 (ja) 2000-06-29 2011-01-05 三菱電機株式会社 半導体装置
JP2005252044A (ja) * 2004-03-05 2005-09-15 Fujitsu Ten Ltd 半導体集積回路の寄生トランジスタ発生防止装置、及び半導体集積回路の寄生トランジスタ発生防止方法
JP2006156959A (ja) 2004-10-26 2006-06-15 Matsushita Electric Ind Co Ltd 半導体装置
US7173315B2 (en) 2004-10-26 2007-02-06 Matsushita Electric Industrial Co., Ltd. Semiconductor device
JP2006332539A (ja) * 2005-05-30 2006-12-07 Sanken Electric Co Ltd 半導体集積回路装置
JP5011748B2 (ja) * 2006-02-24 2012-08-29 株式会社デンソー 半導体装置
JP2008140824A (ja) * 2006-11-30 2008-06-19 Toshiba Corp 半導体装置
JP2008311300A (ja) * 2007-06-12 2008-12-25 Toyota Motor Corp パワー半導体装置、パワー半導体装置の製造方法、およびモータ駆動装置
JP2010118548A (ja) * 2008-11-13 2010-05-27 Mitsubishi Electric Corp 半導体装置
JP5423377B2 (ja) 2009-12-15 2014-02-19 三菱電機株式会社 イグナイタ用電力半導体装置

Also Published As

Publication number Publication date
CN103077946A (zh) 2013-05-01
JP2013093448A (ja) 2013-05-16
DE102012218765B4 (de) 2019-02-07
CN103077946B (zh) 2015-09-16
DE102012218765A1 (de) 2013-05-02
US8536655B2 (en) 2013-09-17
US20130106499A1 (en) 2013-05-02

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