JP2013093448A5 - - Google Patents

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Publication number
JP2013093448A5
JP2013093448A5 JP2011234814A JP2011234814A JP2013093448A5 JP 2013093448 A5 JP2013093448 A5 JP 2013093448A5 JP 2011234814 A JP2011234814 A JP 2011234814A JP 2011234814 A JP2011234814 A JP 2011234814A JP 2013093448 A5 JP2013093448 A5 JP 2013093448A5
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JP
Japan
Prior art keywords
semiconductor layer
type semiconductor
npn transistor
resistance element
electrode
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Application number
JP2011234814A
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English (en)
Japanese (ja)
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JP2013093448A (ja
JP5618963B2 (ja
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Priority to JP2011234814A priority Critical patent/JP5618963B2/ja
Priority claimed from JP2011234814A external-priority patent/JP5618963B2/ja
Priority to US13/534,695 priority patent/US8536655B2/en
Priority to DE102012218765.0A priority patent/DE102012218765B4/de
Priority to CN201210416161.XA priority patent/CN103077946B/zh
Publication of JP2013093448A publication Critical patent/JP2013093448A/ja
Publication of JP2013093448A5 publication Critical patent/JP2013093448A5/ja
Application granted granted Critical
Publication of JP5618963B2 publication Critical patent/JP5618963B2/ja
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JP2011234814A 2011-10-26 2011-10-26 半導体装置 Active JP5618963B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011234814A JP5618963B2 (ja) 2011-10-26 2011-10-26 半導体装置
US13/534,695 US8536655B2 (en) 2011-10-26 2012-06-27 Semiconductor device with power element and circuit element formed within the same semiconductor substrate
DE102012218765.0A DE102012218765B4 (de) 2011-10-26 2012-10-15 Halbleitervorrichtung mit innerhalb desselben Halbleitersubstrats ausgebildetem Leistungselement und Schaltungselement
CN201210416161.XA CN103077946B (zh) 2011-10-26 2012-10-26 在同一半导体衬底内形成电力和电路元件的半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011234814A JP5618963B2 (ja) 2011-10-26 2011-10-26 半導体装置

Publications (3)

Publication Number Publication Date
JP2013093448A JP2013093448A (ja) 2013-05-16
JP2013093448A5 true JP2013093448A5 (enExample) 2014-01-30
JP5618963B2 JP5618963B2 (ja) 2014-11-05

Family

ID=48084554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011234814A Active JP5618963B2 (ja) 2011-10-26 2011-10-26 半導体装置

Country Status (4)

Country Link
US (1) US8536655B2 (enExample)
JP (1) JP5618963B2 (enExample)
CN (1) CN103077946B (enExample)
DE (1) DE102012218765B4 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9391448B2 (en) * 2013-09-17 2016-07-12 The Boeing Company High current event mitigation circuit
EP3151402B1 (en) * 2014-05-30 2022-10-05 Mitsubishi Electric Corporation Power-semiconductor element driving circuit
CN108431945B (zh) * 2015-12-28 2022-06-10 罗姆股份有限公司 半导体设备
JP7227117B2 (ja) * 2019-11-08 2023-02-21 株式会社東芝 半導体装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4933573A (en) * 1987-09-18 1990-06-12 Fuji Electric Co., Ltd. Semiconductor integrated circuit
JPH06350032A (ja) 1993-06-08 1994-12-22 Toshiba Corp 半導体装置の配線構体
US5467050A (en) * 1994-01-04 1995-11-14 Texas Instruments Incorporated Dynamic biasing circuit for semiconductor device
JP3400853B2 (ja) * 1994-04-27 2003-04-28 三菱電機株式会社 半導体装置
JP3532276B2 (ja) * 1995-01-06 2004-05-31 株式会社ルネサステクノロジ 基板バイアス回路
JP4128700B2 (ja) * 1999-09-08 2008-07-30 ローム株式会社 誘導性負荷駆動回路
JP4607291B2 (ja) 2000-06-29 2011-01-05 三菱電機株式会社 半導体装置
JP2005252044A (ja) * 2004-03-05 2005-09-15 Fujitsu Ten Ltd 半導体集積回路の寄生トランジスタ発生防止装置、及び半導体集積回路の寄生トランジスタ発生防止方法
JP2006156959A (ja) 2004-10-26 2006-06-15 Matsushita Electric Ind Co Ltd 半導体装置
US7173315B2 (en) 2004-10-26 2007-02-06 Matsushita Electric Industrial Co., Ltd. Semiconductor device
JP2006332539A (ja) * 2005-05-30 2006-12-07 Sanken Electric Co Ltd 半導体集積回路装置
JP5011748B2 (ja) * 2006-02-24 2012-08-29 株式会社デンソー 半導体装置
JP2008140824A (ja) * 2006-11-30 2008-06-19 Toshiba Corp 半導体装置
JP2008311300A (ja) * 2007-06-12 2008-12-25 Toyota Motor Corp パワー半導体装置、パワー半導体装置の製造方法、およびモータ駆動装置
JP2010118548A (ja) * 2008-11-13 2010-05-27 Mitsubishi Electric Corp 半導体装置
JP5423377B2 (ja) 2009-12-15 2014-02-19 三菱電機株式会社 イグナイタ用電力半導体装置

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