JP2015519741A5 - - Google Patents

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Publication number
JP2015519741A5
JP2015519741A5 JP2015509111A JP2015509111A JP2015519741A5 JP 2015519741 A5 JP2015519741 A5 JP 2015519741A5 JP 2015509111 A JP2015509111 A JP 2015509111A JP 2015509111 A JP2015509111 A JP 2015509111A JP 2015519741 A5 JP2015519741 A5 JP 2015519741A5
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JP
Japan
Prior art keywords
power
power transistor
segment
node
control
Prior art date
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Granted
Application number
JP2015509111A
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English (en)
Japanese (ja)
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JP2015519741A (ja
JP6089099B2 (ja
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Publication date
Priority claimed from US13/454,730 external-priority patent/US8581660B1/en
Application filed filed Critical
Publication of JP2015519741A publication Critical patent/JP2015519741A/ja
Publication of JP2015519741A5 publication Critical patent/JP2015519741A5/ja
Application granted granted Critical
Publication of JP6089099B2 publication Critical patent/JP6089099B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2015509111A 2012-04-24 2013-04-24 電力トランジスタモジュール Active JP6089099B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/454,730 US8581660B1 (en) 2012-04-24 2012-04-24 Power transistor partial current sensing for high precision applications
US13/454,730 2012-04-24
PCT/US2013/038012 WO2013163308A1 (en) 2012-04-24 2013-04-24 Power transistor module

Publications (3)

Publication Number Publication Date
JP2015519741A JP2015519741A (ja) 2015-07-09
JP2015519741A5 true JP2015519741A5 (enExample) 2016-06-16
JP6089099B2 JP6089099B2 (ja) 2017-03-01

Family

ID=49379538

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015509111A Active JP6089099B2 (ja) 2012-04-24 2013-04-24 電力トランジスタモジュール

Country Status (4)

Country Link
US (1) US8581660B1 (enExample)
JP (1) JP6089099B2 (enExample)
CN (1) CN104247027B (enExample)
WO (1) WO2013163308A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5664536B2 (ja) * 2011-12-19 2015-02-04 株式会社デンソー 電流検出回路および半導体集積回路装置
US9214415B2 (en) * 2013-04-11 2015-12-15 Texas Instruments Incorporated Integrating multi-output power converters having vertically stacked semiconductor chips
DE102018207308B4 (de) 2018-05-09 2020-07-02 Infineon Technologies Ag Halbleiterbauteil mit integriertem shunt-widerstand und verfahren zu dessen herstellung

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5061863A (en) * 1989-05-16 1991-10-29 Kabushiki Kaisha Toyoda Jidoshokki Seisakusho Transistor provided with a current detecting function
JPH05299431A (ja) * 1992-04-16 1993-11-12 Toyota Autom Loom Works Ltd 電流検出機能付トランジスタ
JP3243902B2 (ja) * 1993-09-17 2002-01-07 株式会社日立製作所 半導体装置
JPH11134049A (ja) * 1997-10-30 1999-05-21 Dve:Kk 基準電圧回路
JP3674333B2 (ja) * 1998-09-11 2005-07-20 株式会社日立製作所 パワー半導体モジュール並びにそれを用いた電動機駆動システム
US6369646B1 (en) * 2001-01-29 2002-04-09 Delphi Technologies, Inc. Leakage current compensation circuit
CN100380661C (zh) * 2002-01-29 2008-04-09 美高森美公司 分栅式功率模块以及用于抑制其中振荡的方法
US7466012B2 (en) * 2004-09-13 2008-12-16 International Rectifier Corporation Power semiconductor package
JP4610453B2 (ja) * 2005-09-27 2011-01-12 三洋電機株式会社 電流検出回路
US7615854B2 (en) * 2005-11-03 2009-11-10 International Rectifier Corporation Semiconductor package that includes stacked semiconductor die
JP4916745B2 (ja) * 2006-03-28 2012-04-18 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5390064B2 (ja) * 2006-08-30 2014-01-15 ルネサスエレクトロニクス株式会社 半導体装置
JP4930904B2 (ja) * 2007-09-07 2012-05-16 サンケン電気株式会社 電気回路のスイッチング装置
JP2009277930A (ja) * 2008-05-15 2009-11-26 Nec Electronics Corp 半導体装置
JP5188465B2 (ja) * 2009-06-30 2013-04-24 日立オートモティブシステムズ株式会社 電流検出装置およびこれを用いた制御システム
JP5445329B2 (ja) * 2010-05-25 2014-03-19 株式会社デンソー 電力半導体装置
DE102010030317B4 (de) * 2010-06-21 2016-09-01 Infineon Technologies Ag Schaltungsanordnung mit Shuntwiderstand
DE102010038731B3 (de) * 2010-07-30 2011-12-08 Semikron Elektronik Gmbh & Co. Kg Submodul und Leistungshalbleitermodul
WO2012029652A1 (ja) * 2010-09-03 2012-03-08 三菱電機株式会社 半導体装置
CN202084540U (zh) * 2011-04-02 2011-12-21 四川大雁微电子有限公司 一种表面贴装型功率晶体管模块

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