JP2017085571A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2017085571A5 JP2017085571A5 JP2016211192A JP2016211192A JP2017085571A5 JP 2017085571 A5 JP2017085571 A5 JP 2017085571A5 JP 2016211192 A JP2016211192 A JP 2016211192A JP 2016211192 A JP2016211192 A JP 2016211192A JP 2017085571 A5 JP2017085571 A5 JP 2017085571A5
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- source
- drain
- electrically connected
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 15
- 239000003990 capacitor Substances 0.000 claims 4
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 238000004070 electrodeposition Methods 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015213708 | 2015-10-30 | ||
| JP2015213708 | 2015-10-30 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021002810A Division JP7033220B2 (ja) | 2015-10-30 | 2021-01-12 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017085571A JP2017085571A (ja) | 2017-05-18 |
| JP2017085571A5 true JP2017085571A5 (enExample) | 2019-12-05 |
| JP6824001B2 JP6824001B2 (ja) | 2021-02-03 |
Family
ID=58635517
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016211192A Active JP6824001B2 (ja) | 2015-10-30 | 2016-10-28 | 半導体装置および電子機器 |
| JP2021002810A Expired - Fee Related JP7033220B2 (ja) | 2015-10-30 | 2021-01-12 | 半導体装置 |
| JP2022027814A Withdrawn JP2022071035A (ja) | 2015-10-30 | 2022-02-25 | 半導体装置 |
| JP2023175835A Withdrawn JP2024009918A (ja) | 2015-10-30 | 2023-10-11 | 半導体装置 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021002810A Expired - Fee Related JP7033220B2 (ja) | 2015-10-30 | 2021-01-12 | 半導体装置 |
| JP2022027814A Withdrawn JP2022071035A (ja) | 2015-10-30 | 2022-02-25 | 半導体装置 |
| JP2023175835A Withdrawn JP2024009918A (ja) | 2015-10-30 | 2023-10-11 | 半導体装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (3) | US10038402B2 (enExample) |
| JP (4) | JP6824001B2 (enExample) |
| KR (1) | KR102623411B1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111742408B (zh) * | 2018-01-25 | 2024-05-28 | 株式会社半导体能源研究所 | 半导体材料及半导体装置 |
| WO2019239246A1 (ja) * | 2018-06-15 | 2019-12-19 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
| US11515873B2 (en) | 2018-06-29 | 2022-11-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| US10924090B2 (en) | 2018-07-20 | 2021-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising holding units |
| FR3084489B1 (fr) * | 2018-07-26 | 2020-09-11 | Etat Francais Represente Par Le Delegue General Pour Larmement | Procede de detection d’au moins un equipement informatique compromis au sein d’un systeme d’information |
| JP2020064965A (ja) * | 2018-10-17 | 2020-04-23 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置、検出方法、電子機器及び電子機器の制御方法 |
| US20220208794A1 (en) * | 2019-05-08 | 2022-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN110148592B (zh) * | 2019-05-21 | 2020-12-11 | 上海天马有机发光显示技术有限公司 | 一种显示面板、包含其的显示装置 |
| US10917076B1 (en) * | 2019-08-02 | 2021-02-09 | Samsung Electronics Co., Ltd. | Ring oscillator and method for controlling start-up of ring oscillator |
| TWI755208B (zh) * | 2020-12-17 | 2022-02-11 | 大陸商北京集創北方科技股份有限公司 | 電容式觸控感測電路及利用其之觸控晶片、觸控顯示器和資訊處理裝置 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62107A (ja) | 1985-06-26 | 1987-01-06 | Mitsubishi Electric Corp | 半導体装置 |
| JP3265045B2 (ja) | 1993-04-21 | 2002-03-11 | 株式会社東芝 | 電圧制御発振器 |
| JPH0774596A (ja) | 1993-08-31 | 1995-03-17 | Mitsubishi Electric Corp | リング発振器 |
| JPH07202646A (ja) | 1993-12-28 | 1995-08-04 | Fujitsu Ltd | 電圧制御発振回路 |
| JP3579980B2 (ja) * | 1995-09-14 | 2004-10-20 | 株式会社デンソー | 温度補償型リング発振器 |
| JP3688413B2 (ja) * | 1995-12-21 | 2005-08-31 | 株式会社東芝 | 出力回路 |
| JP3298448B2 (ja) | 1997-02-21 | 2002-07-02 | 日本電気株式会社 | 電圧制御発振器 |
| US7276970B2 (en) * | 1998-11-12 | 2007-10-02 | Broadcom Corporation | System and method for linearizing a CMOS differential pair |
| KR100692289B1 (ko) * | 2000-02-10 | 2007-03-09 | 가부시키가이샤 히타치세이사쿠쇼 | 화상표시장치 |
| JP4090716B2 (ja) * | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
| KR100471181B1 (ko) * | 2002-08-20 | 2005-03-10 | 삼성전자주식회사 | 소모 전력에 따라 동작 성능을 최적화할 수 있는 집적회로 장치 |
| US20060017515A1 (en) * | 2004-07-22 | 2006-01-26 | Columbia University | CMOS negative resistance/Q enhancement method and apparatus |
| JP5294651B2 (ja) * | 2007-05-18 | 2013-09-18 | キヤノン株式会社 | インバータの作製方法及びインバータ |
| WO2008149873A1 (en) * | 2007-05-31 | 2008-12-11 | Canon Kabushiki Kaisha | Manufacturing method of thin film transistor using oxide semiconductor |
| CN101911166B (zh) * | 2008-01-15 | 2013-08-21 | 株式会社半导体能源研究所 | 发光器件 |
| MY187143A (en) | 2010-01-20 | 2021-09-03 | Semiconductor Energy Lab | Semiconductor device |
| US8552712B2 (en) | 2010-04-16 | 2013-10-08 | Semiconductor Energy Laboratory Co., Ltd. | Current measurement method, inspection method of semiconductor device, semiconductor device, and test element group |
| KR101899880B1 (ko) | 2011-02-17 | 2018-09-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 프로그래머블 ｌｓｉ |
| TWI571058B (zh) | 2011-05-18 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置與驅動半導體裝置之方法 |
| WO2012176422A1 (ja) * | 2011-06-24 | 2012-12-27 | シャープ株式会社 | 表示装置及びその製造方法 |
| US9058892B2 (en) * | 2012-03-14 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and shift register |
| US9209795B2 (en) * | 2013-05-17 | 2015-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing device and measuring method |
| US9647125B2 (en) * | 2013-05-20 | 2017-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9397637B2 (en) | 2014-03-06 | 2016-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Voltage controlled oscillator, semiconductor device, and electronic device |
| SG11201606645VA (en) * | 2014-03-07 | 2016-09-29 | Semiconductor Energy Lab Co Ltd | Method for driving semiconductor device |
| KR102352633B1 (ko) | 2014-07-25 | 2022-01-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발진 회로 및 그것을 포함하는 반도체 장치 |
| US9793905B2 (en) | 2014-10-31 | 2017-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
-
2016
- 2016-10-20 US US15/298,305 patent/US10038402B2/en not_active Expired - Fee Related
- 2016-10-26 KR KR1020160139834A patent/KR102623411B1/ko active Active
- 2016-10-28 JP JP2016211192A patent/JP6824001B2/ja active Active
-
2018
- 2018-07-26 US US16/046,277 patent/US10651790B2/en active Active
-
2020
- 2020-05-07 US US16/868,688 patent/US11870393B2/en active Active
-
2021
- 2021-01-12 JP JP2021002810A patent/JP7033220B2/ja not_active Expired - Fee Related
-
2022
- 2022-02-25 JP JP2022027814A patent/JP2022071035A/ja not_active Withdrawn
-
2023
- 2023-10-11 JP JP2023175835A patent/JP2024009918A/ja not_active Withdrawn