JP6824001B2 - 半導体装置および電子機器 - Google Patents

半導体装置および電子機器 Download PDF

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Publication number
JP6824001B2
JP6824001B2 JP2016211192A JP2016211192A JP6824001B2 JP 6824001 B2 JP6824001 B2 JP 6824001B2 JP 2016211192 A JP2016211192 A JP 2016211192A JP 2016211192 A JP2016211192 A JP 2016211192A JP 6824001 B2 JP6824001 B2 JP 6824001B2
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Japan
Prior art keywords
transistor
oxide semiconductor
circuit
layer
wiring
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JP2016211192A
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English (en)
Japanese (ja)
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JP2017085571A (ja
JP2017085571A5 (enExample
Inventor
佑樹 岡本
佑樹 岡本
黒川　義元
義元 黒川
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/02—Details
    • H03B5/06—Modifications of generator to ensure starting of oscillations
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/354—Astable circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/011—Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/014—Modifications of generator to ensure starting of oscillations
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
    • H03K3/03—Astable circuits
    • H03K3/0315—Ring oscillators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00—Automatic control of frequency or phase; Synchronisation
    • H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
    • H03L7/08—Details of the phase-locked loop
    • H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
    • H03L7/0995—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop the oscillator comprising a ring oscillator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Credit Cards Or The Like (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Noodles (AREA)
JP2016211192A 2015-10-30 2016-10-28 半導体装置および電子機器 Active JP6824001B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015213708 2015-10-30
JP2015213708 2015-10-30

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2021002810A Division JP7033220B2 (ja) 2015-10-30 2021-01-12 半導体装置

Publications (3)

Publication Number Publication Date
JP2017085571A JP2017085571A (ja) 2017-05-18
JP2017085571A5 JP2017085571A5 (enExample) 2019-12-05
JP6824001B2 true JP6824001B2 (ja) 2021-02-03

Family

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Family Applications (4)

Application Number Title Priority Date Filing Date
JP2016211192A Active JP6824001B2 (ja) 2015-10-30 2016-10-28 半導体装置および電子機器
JP2021002810A Expired - Fee Related JP7033220B2 (ja) 2015-10-30 2021-01-12 半導体装置
JP2022027814A Withdrawn JP2022071035A (ja) 2015-10-30 2022-02-25 半導体装置
JP2023175835A Withdrawn JP2024009918A (ja) 2015-10-30 2023-10-11 半導体装置

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2021002810A Expired - Fee Related JP7033220B2 (ja) 2015-10-30 2021-01-12 半導体装置
JP2022027814A Withdrawn JP2022071035A (ja) 2015-10-30 2022-02-25 半導体装置
JP2023175835A Withdrawn JP2024009918A (ja) 2015-10-30 2023-10-11 半導体装置

Country Status (3)

Country Link
US (3) US10038402B2 (enExample)
JP (4) JP6824001B2 (enExample)
KR (1) KR102623411B1 (enExample)

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CN111742408B (zh) * 2018-01-25 2024-05-28 株式会社半导体能源研究所 半导体材料及半导体装置
WO2019239246A1 (ja) * 2018-06-15 2019-12-19 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
US11515873B2 (en) 2018-06-29 2022-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10924090B2 (en) 2018-07-20 2021-02-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising holding units
FR3084489B1 (fr) * 2018-07-26 2020-09-11 Etat Francais Represente Par Le Delegue General Pour Larmement Procede de detection d’au moins un equipement informatique compromis au sein d’un systeme d’information
JP2020064965A (ja) * 2018-10-17 2020-04-23 ソニーセミコンダクタソリューションズ株式会社 半導体装置、検出方法、電子機器及び電子機器の制御方法
US20220208794A1 (en) * 2019-05-08 2022-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN110148592B (zh) * 2019-05-21 2020-12-11 上海天马有机发光显示技术有限公司 一种显示面板、包含其的显示装置
US10917076B1 (en) * 2019-08-02 2021-02-09 Samsung Electronics Co., Ltd. Ring oscillator and method for controlling start-up of ring oscillator
TWI755208B (zh) * 2020-12-17 2022-02-11 大陸商北京集創北方科技股份有限公司 電容式觸控感測電路及利用其之觸控晶片、觸控顯示器和資訊處理裝置

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JPH07202646A (ja) 1993-12-28 1995-08-04 Fujitsu Ltd 電圧制御発振回路
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Also Published As

Publication number Publication date
JP2017085571A (ja) 2017-05-18
JP7033220B2 (ja) 2022-03-09
US20200266761A1 (en) 2020-08-20
US20180358925A1 (en) 2018-12-13
US20170126176A1 (en) 2017-05-04
JP2024009918A (ja) 2024-01-23
US10651790B2 (en) 2020-05-12
US10038402B2 (en) 2018-07-31
US11870393B2 (en) 2024-01-09
KR102623411B1 (ko) 2024-01-11
JP2022071035A (ja) 2022-05-13
JP2021077896A (ja) 2021-05-20
KR20170051296A (ko) 2017-05-11

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