JP2016027652A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2016027652A JP2016027652A JP2015133671A JP2015133671A JP2016027652A JP 2016027652 A JP2016027652 A JP 2016027652A JP 2015133671 A JP2015133671 A JP 2015133671A JP 2015133671 A JP2015133671 A JP 2015133671A JP 2016027652 A JP2016027652 A JP 2016027652A
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- transistor
- oxide semiconductor
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- semiconductor layer
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- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】酸化物半導体層と、電極層と、コンタクトプラグと、を有し、電極層は、酸化物半導体層と接する一方の端部と、一方の端部と対向する他方の端部と、を有し、他方の端部は上面から見ると半円状の切欠き部を有し、コンタクトプラグは、半円状の切欠き部と接している構成とする。
【選択図】図1
Description
本実施の形態では、本発明の一態様である半導体装置について、図面を参照して説明する。
本実施の形態では、本発明の一態様に用いることのできる酸化物半導体を有するトランジスタについて図面を用いて説明する。なお、本実施の形態における図面では、明瞭化のために一部の要素を拡大、縮小、または省略して図示している。
本実施の形態では、実施の形態2に示したトランジスタの構成要素について詳細を説明する。
本実施の形態では、実施の形態2で説明したトランジスタ101、およびトランジスタ107の作製方法を説明する。
以下では、本発明の一態様に用いることのできる酸化物半導体膜の構造について説明する。
本実施の形態では、先の実施の形態で説明した記憶装置を含むCPUについて説明する。
本発明の一態様に係る半導体装置は、表示機器、パーソナルコンピュータ、記録媒体を備えた画像再生装置(代表的にはDVD:Digital Versatile Disc等の記録媒体を再生し、その画像を表示しうるディスプレイを有する装置)に用いることができる。その他に、本発明の一態様に係る半導体装置を用いることができる電子機器として、携帯電話、携帯型を含むゲーム機、携帯データ端末、電子書籍端末、ビデオカメラ、デジタルスチルカメラ等のカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤー等)、複写機、ファクシミリ、プリンタ、プリンタ複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。これら電子機器の具体例を図43に示す。
51 トランジスタ
52 トランジスタ
53 トランジスタ
54 トランジスタ
55 容量素子
56 トランジスタ
59 フォトダイオード
61a コンタクトプラグ
61b コンタクトプラグ
61c コンタクトプラグ
62a コンタクトプラグ
62b コンタクトプラグ
62c コンタクトプラグ
63a コンタクトプラグ
63b コンタクトプラグ
63c コンタクトプラグ
65 コンタクトプラグ
66a コンタクトプラグ
66b コンタクトプラグ
67 コンタクトプラグ
68 電極層
71 配線
72 配線
73 配線
74 配線
75 配線
77 配線
78 配線
79 配線
81 絶縁層
82 絶縁層
83 絶縁層
84 絶縁層
85 絶縁層
86 絶縁層
87 絶縁層
88 絶縁層
89 誘電体層
90 インバータ回路
91 回路
92 回路
101 トランジスタ
102 トランジスタ
103 トランジスタ
104 トランジスタ
105 トランジスタ
106 トランジスタ
107 トランジスタ
108 トランジスタ
109 トランジスタ
110 トランジスタ
111 トランジスタ
112 トランジスタ
115 基板
120 絶縁層
130 酸化物半導体層
130a 酸化物半導体層
130A 酸化物半導体膜
130b 酸化物半導体層
130B 酸化物半導体膜
130c 酸化物半導体層
130C 酸化物半導体膜
140 導電層
141a 導電層
150 導電層
156 レジストマスク
160 絶縁層
160A 絶縁膜
170 導電層
171 導電層
171A 導電膜
172 導電層
172A 導電膜
173 導電層
175 絶縁層
180 絶縁層
231 領域
232 領域
233 領域
331 領域
332 領域
333 領域
334 領域
335 領域
430 酸化物半導体層
432 タングステン膜
434 窒化シリコン膜
440 タングステン膜
463 タングステン膜
483 酸化シリコン膜
484 酸化アルミニウム膜
485 酸化窒化シリコン膜
486 酸化アルミニウム膜
487 酸化窒化シリコン膜
810A エッチングチャンバー
810B エッチングチャンバー
810C エッチングチャンバー
820 トランスファーチャンバー
830 ガス供給システム
901 筐体
902 筐体
903 表示部
904 表示部
905 マイクロフォン
906 スピーカー
907 操作キー
908 スタイラス
911 筐体
912 筐体
913 表示部
914 操作キー
915 レンズ
916 接続部
921 筐体
922 表示部
923 キーボード
924 ポインティングデバイス
931 筐体
932 表示部
933 リストバンド
941 筐体
942 表示部
949 カメラ
951 車体
952 車輪
953 ダッシュボード
954 ライト
1189 ROMインターフェース
1190 基板
1191 ALU
1192 ALUコントローラ
1193 インストラクションデコーダ
1194 インタラプトコントローラ
1195 タイミングコントローラ
1196 レジスタ
1197 レジスタコントローラ
1198 バスインターフェース
1199 ROM
1200 記憶素子
1201 回路
1202 回路
1203 スイッチ
1204 スイッチ
1206 論理素子
1207 容量素子
1208 容量素子
1209 トランジスタ
1210 トランジスタ
1213 トランジスタ
1214 トランジスタ
1220 回路
Claims (7)
- 酸化物半導体層と、電極層と、コンタクトプラグと、を有し、
前記電極層は、前記酸化物半導体層と接する一方の端部と、前記一方の端部と対向する他方の端部と、を有し、
前記他方の端部は上面から見ると半円状の切欠き部を有し、
前記コンタクトプラグは、前記半円状の切欠き部と接していることを特徴とする半導体装置。 - 酸化物半導体層と、電極層と、コンタクトプラグと、を有し、
前記電極層は、前記酸化物半導体層の上面に接して設けられ、
前記電極層および前記酸化物半導体層は、それぞれの端部が重なる領域を有し、
前記端部は上面から見ると半円状の切欠き部を有し、
前記コンタクトプラグは、前記半円状の切欠き部と接していることを特徴とする半導体装置。 - 請求項1または2において、
前記コンタクトプラグは、前記電極層の上面と接する領域を有することを特徴とする半導体装置。 - 第1のトランジスタと、第2のトランジスタと、コンタクトプラグを有する半導体装置であって、
前記第1のトランジスタは、シリコン基板に活性領域を有し、
前記第2のトランジスタは、酸化物半導体層を活性層に有し、
前記第1のトランジスタと前記第2のトランジスタは、それぞれ重なる領域を有し、
前記第1のトランジスタと前記第2のトランジスタの間に絶縁層を有し、
前記第1のトランジスタのソース領域またはドレイン領域の一方は、前記第2のトランジスタのソース電極またはドレイン電極の一方と前記コンタクトプラグを介して電気的に接続されており、
前記第2のトランジスタのソース電極またはドレイン電極の一方または両方は、前記活性層と接する一方の端部と、前記一方の端部と対向する他方の端部と、を有し、
前記他方の端部は上面から見ると半円状の切欠き部を有し、
前記コンタクトプラグは、前記半円状の切欠き部と接し、前記絶縁層を貫通して設けられていることを特徴とする半導体装置。 - 請求項4において、前記第1のトランジスタおよび前記第2のトランジスタは、CMOS回路を構成していることを特徴とする半導体装置。
- 請求項1乃至5のいずれか一項において、
前記酸化物半導体は、Inと、Znと、M(MはAl、Ti、Sn、Ga、Y、Zr、La、Ce、NdまたはHf)を有することを特徴とする半導体装置。 - 請求項1乃至6のいずれか一項に記載の半導体装置と、
表示装置、筐体、マイクロフォン、スピーカー、操作キー、カメラ、またはレンズを有する電子機器。
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US10002884B2 (en) | 2018-06-19 |
US20160005872A1 (en) | 2016-01-07 |
US20170236840A1 (en) | 2017-08-17 |
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