JP2010062262A5 - - Google Patents

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Publication number
JP2010062262A5
JP2010062262A5 JP2008225031A JP2008225031A JP2010062262A5 JP 2010062262 A5 JP2010062262 A5 JP 2010062262A5 JP 2008225031 A JP2008225031 A JP 2008225031A JP 2008225031 A JP2008225031 A JP 2008225031A JP 2010062262 A5 JP2010062262 A5 JP 2010062262A5
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JP
Japan
Prior art keywords
layer
igbt
semiconductor device
insulating films
channel formation
Prior art date
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Pending
Application number
JP2008225031A
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English (en)
Japanese (ja)
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JP2010062262A (ja
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Publication date
Application filed filed Critical
Priority to JP2008225031A priority Critical patent/JP2010062262A/ja
Priority claimed from JP2008225031A external-priority patent/JP2010062262A/ja
Publication of JP2010062262A publication Critical patent/JP2010062262A/ja
Publication of JP2010062262A5 publication Critical patent/JP2010062262A5/ja
Pending legal-status Critical Current

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JP2008225031A 2008-09-02 2008-09-02 半導体装置およびその製造方法 Pending JP2010062262A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008225031A JP2010062262A (ja) 2008-09-02 2008-09-02 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008225031A JP2010062262A (ja) 2008-09-02 2008-09-02 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2010062262A JP2010062262A (ja) 2010-03-18
JP2010062262A5 true JP2010062262A5 (enExample) 2011-09-29

Family

ID=42188768

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008225031A Pending JP2010062262A (ja) 2008-09-02 2008-09-02 半導体装置およびその製造方法

Country Status (1)

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JP (1) JP2010062262A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8587087B2 (en) 2010-02-25 2013-11-19 Renesas Electronics Corporation Semiconductor device and manufacturing method of the same
JP5560897B2 (ja) * 2010-05-20 2014-07-30 富士電機株式会社 超接合半導体装置の製造方法
JP5361808B2 (ja) 2010-06-23 2013-12-04 三菱電機株式会社 電力用半導体装置
JP5816570B2 (ja) 2011-05-27 2015-11-18 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
JP2013179251A (ja) * 2012-02-09 2013-09-09 Renesas Electronics Corp 半導体装置
WO2013140621A1 (ja) * 2012-03-23 2013-09-26 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP5546612B2 (ja) * 2012-12-07 2014-07-09 三菱電機株式会社 電力用半導体装置
US11894457B2 (en) 2020-05-09 2024-02-06 Joulwatt Technology Co., Ltd. Semiconductor device and manufacturing method thereof
CN111584635B (zh) * 2020-05-13 2022-09-20 杰华特微电子股份有限公司 半导体器件

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02271679A (ja) * 1989-04-13 1990-11-06 Fuji Electric Co Ltd 伝導度変調型ｍｏｓｆｅｔ
JP5114832B2 (ja) * 2004-09-02 2013-01-09 富士電機株式会社 半導体装置およびその製造方法
WO2006093309A1 (en) * 2005-03-03 2006-09-08 Fuji Electric Holdings Co., Ltd. Semiconductor device and the method of manufacturing the same
JP2008153454A (ja) * 2006-12-18 2008-07-03 Fuji Electric Device Technology Co Ltd Ｍｏｓ型半導体装置の製造方法
US7713821B2 (en) * 2007-06-25 2010-05-11 Sharp Laboratories Of America, Inc. Thin silicon-on-insulator high voltage auxiliary gated transistor

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