JP2009302524A5 - - Google Patents

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Publication number
JP2009302524A5
JP2009302524A5 JP2009117299A JP2009117299A JP2009302524A5 JP 2009302524 A5 JP2009302524 A5 JP 2009302524A5 JP 2009117299 A JP2009117299 A JP 2009117299A JP 2009117299 A JP2009117299 A JP 2009117299A JP 2009302524 A5 JP2009302524 A5 JP 2009302524A5
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JP
Japan
Prior art keywords
semiconductor layer
thin film
film transistor
channel formation
formation region
Prior art date
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Application number
JP2009117299A
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English (en)
Japanese (ja)
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JP5518366B2 (ja
JP2009302524A (ja
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Priority to JP2009117299A priority Critical patent/JP5518366B2/ja
Priority claimed from JP2009117299A external-priority patent/JP5518366B2/ja
Publication of JP2009302524A publication Critical patent/JP2009302524A/ja
Publication of JP2009302524A5 publication Critical patent/JP2009302524A5/ja
Application granted granted Critical
Publication of JP5518366B2 publication Critical patent/JP5518366B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009117299A 2008-05-16 2009-05-14 薄膜トランジスタ Active JP5518366B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009117299A JP5518366B2 (ja) 2008-05-16 2009-05-14 薄膜トランジスタ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008130169 2008-05-16
JP2008130169 2008-05-16
JP2009117299A JP5518366B2 (ja) 2008-05-16 2009-05-14 薄膜トランジスタ

Publications (3)

Publication Number Publication Date
JP2009302524A JP2009302524A (ja) 2009-12-24
JP2009302524A5 true JP2009302524A5 (enExample) 2012-05-10
JP5518366B2 JP5518366B2 (ja) 2014-06-11

Family

ID=41549056

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009117299A Active JP5518366B2 (ja) 2008-05-16 2009-05-14 薄膜トランジスタ

Country Status (2)

Country Link
US (1) US8168973B2 (enExample)
JP (1) JP5518366B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5436017B2 (ja) * 2008-04-25 2014-03-05 株式会社半導体エネルギー研究所 半導体装置
CN102077331B (zh) * 2008-06-27 2014-05-07 株式会社半导体能源研究所 薄膜晶体管
KR101602252B1 (ko) * 2008-06-27 2016-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터, 반도체장치 및 전자기기
JP5498762B2 (ja) * 2008-11-17 2014-05-21 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
KR101132119B1 (ko) * 2010-03-10 2012-04-05 삼성모바일디스플레이주식회사 액정표시장치 어레이 기판 및 그 제조방법
US20150087144A1 (en) * 2013-09-26 2015-03-26 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus and method of manufacturing metal gate semiconductor device
US9439540B2 (en) * 2014-03-12 2016-09-13 Donald P. Berry Potato chip lifter
DE112015002491T5 (de) * 2014-05-27 2017-03-02 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung und Herstellungsverfahren dafür

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
JP2523679B2 (ja) 1987-09-14 1996-08-14 松下電器産業株式会社 薄膜トランジスタおよびその製造方法
JPH0273622A (ja) * 1988-09-08 1990-03-13 Toyota Motor Corp アモルファス超格子構造の製造方法
JPH03278466A (ja) * 1990-03-27 1991-12-10 Toshiba Corp 薄膜トランジスタおよびその製造方法
JPH05175503A (ja) * 1991-10-23 1993-07-13 Kyocera Corp 薄膜トランジスタおよびその製造方法
JP3943245B2 (ja) * 1997-09-20 2007-07-11 株式会社半導体エネルギー研究所 半導体装置
JP2000277439A (ja) 1999-03-25 2000-10-06 Kanegafuchi Chem Ind Co Ltd 結晶質シリコン系薄膜のプラズマｃｖｄ方法およびシリコン系薄膜光電変換装置の製造方法
US6559007B1 (en) * 2000-04-06 2003-05-06 Micron Technology, Inc. Method for forming flash memory device having a tunnel dielectric comprising nitrided oxide
US6544908B1 (en) * 2000-08-30 2003-04-08 Micron Technology, Inc. Ammonia gas passivation on nitride encapsulated devices
CN1434493A (zh) * 2002-01-23 2003-08-06 联华电子股份有限公司 自生长疏水性纳米分子有机防扩散膜及其制备方法
US6838300B2 (en) * 2003-02-04 2005-01-04 Texas Instruments Incorporated Chemical treatment of low-k dielectric films
FR2853418B1 (fr) * 2003-04-01 2005-08-19 Commissariat Energie Atomique Dispositif optique a stabilite mecanique renforcee fonctionnant dans l'extreme ultraviolet et masque de lithographie comportant un tel dispositif
US20040198046A1 (en) * 2003-04-01 2004-10-07 Lee Yu-Chou Method for decreasing contact resistance of source/drain electrodes
JP4748954B2 (ja) 2003-07-14 2011-08-17 株式会社半導体エネルギー研究所 液晶表示装置
JP4554292B2 (ja) * 2003-07-18 2010-09-29 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
TWI234288B (en) * 2004-07-27 2005-06-11 Au Optronics Corp Method for fabricating a thin film transistor and related circuits
JP5207598B2 (ja) * 2006-05-24 2013-06-12 パナソニック株式会社 窒化物半導体材料、半導体素子およびその製造方法
JPWO2008018478A1 (ja) * 2006-08-09 2009-12-24 三井金属鉱業株式会社 素子の接合構造
JP2008300779A (ja) * 2007-06-04 2008-12-11 Elpida Memory Inc 半導体装置及びその製造方法
KR101602252B1 (ko) * 2008-06-27 2016-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터, 반도체장치 및 전자기기
CN102077331B (zh) * 2008-06-27 2014-05-07 株式会社半导体能源研究所 薄膜晶体管

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