JP2013520789A5 - - Google Patents

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Publication number
JP2013520789A5
JP2013520789A5 JP2012553345A JP2012553345A JP2013520789A5 JP 2013520789 A5 JP2013520789 A5 JP 2013520789A5 JP 2012553345 A JP2012553345 A JP 2012553345A JP 2012553345 A JP2012553345 A JP 2012553345A JP 2013520789 A5 JP2013520789 A5 JP 2013520789A5
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Japan
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doped region
highly doped
region
well
highly
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JP2012553345A
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Japanese (ja)
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JP2013520789A (ja
JP5904644B2 (ja
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Priority claimed from PCT/EP2011/052576 external-priority patent/WO2011101484A2/en
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Publication of JP2013520789A5 publication Critical patent/JP2013520789A5/ja
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JP2012553345A 2010-02-22 2011-02-22 高保持電圧デバイス Active JP5904644B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US30665810P 2010-02-22 2010-02-22
US61/306,658 2010-02-22
PCT/EP2011/052576 WO2011101484A2 (en) 2010-02-22 2011-02-22 High holding voltage device

Publications (3)

Publication Number Publication Date
JP2013520789A JP2013520789A (ja) 2013-06-06
JP2013520789A5 true JP2013520789A5 (enExample) 2014-04-10
JP5904644B2 JP5904644B2 (ja) 2016-04-13

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Family Applications (1)

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JP2012553345A Active JP5904644B2 (ja) 2010-02-22 2011-02-22 高保持電圧デバイス

Country Status (6)

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US (1) US8653557B2 (enExample)
EP (1) EP2539934B1 (enExample)
JP (1) JP5904644B2 (enExample)
CN (1) CN102884624B (enExample)
TW (1) TW201145488A (enExample)
WO (1) WO2011101484A2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6187984B2 (ja) * 2012-02-07 2017-08-30 ソフィックス ビーヴィービーエー 交互伝導タイプの領域を有する静電放電保護用の半導体デバイス
CN102569294B (zh) * 2012-02-28 2016-01-13 北京燕东微电子有限公司 提高静电保护器件维持电压的方法
FR2987938A1 (fr) * 2012-03-12 2013-09-13 St Microelectronics Sa Dispositif electronique de protection contre les decharges electrostatiques, a structure concentrique
KR101975894B1 (ko) 2012-12-04 2019-08-28 삼성전자주식회사 정전기 방전 보호 장치
US9502890B2 (en) 2013-05-22 2016-11-22 Freescale Semiconductor, Inc. Protection device and related fabrication methods
US9129806B2 (en) 2013-05-22 2015-09-08 Freescale Semiconductor Inc. Protection device and related fabrication methods
JP6052068B2 (ja) * 2013-06-07 2016-12-27 株式会社デンソー 半導体装置の保護回路
US9543420B2 (en) 2013-07-19 2017-01-10 Nxp Usa, Inc. Protection device and related fabrication methods
US9685431B2 (en) * 2013-09-27 2017-06-20 Sofics Bvba Semiconductor device for electrostatic discharge protection
TWI548060B (zh) * 2014-04-23 2016-09-01 立錡科技股份有限公司 為高電壓積體電路提供靜電防護的矽控整流器
US9287255B2 (en) 2014-07-09 2016-03-15 Freescale Semiconductor Inc. ESD protection device and related fabrication methods
KR102238544B1 (ko) 2014-12-08 2021-04-09 삼성전자주식회사 정전기 방전 보호 장치 및 이를 포함하는 전자 장치
CN104538436A (zh) * 2015-01-05 2015-04-22 武汉新芯集成电路制造有限公司 一种高保持电压的可控硅整流器
EP3116027A1 (en) * 2015-07-10 2017-01-11 Nxp B.V. An electrostatic discharge protection device comprising a silicon controlled rectifier
CN105655333A (zh) * 2016-03-30 2016-06-08 中国电子科技集团公司第二十四研究所 一种高维持电压的双向scr保护结构
EP3451379A1 (en) * 2017-09-01 2019-03-06 NXP USA, Inc. Electrostatic discharge protection circuit with a bi-directional silicon controlled rectifier (scr)
CN109979931B (zh) * 2017-12-28 2020-11-10 无锡华润上华科技有限公司 一种双向静电放电保护器件
CN111785717B (zh) * 2019-04-04 2023-05-26 中芯国际集成电路制造(上海)有限公司 Scr静电保护结构及其形成方法
CN113497027B (zh) * 2020-04-03 2024-03-26 长鑫存储技术有限公司 半导体器件
EP3951884A1 (en) * 2020-08-05 2022-02-09 Nexperia B.V. A semiconductor device and a method of manufacture of a semiconductor device
CN117790500B (zh) * 2024-02-19 2024-05-10 成都芯翼科技有限公司 一种用于m-lvds端口的静电放电保护结构

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JP4005920B2 (ja) 2001-03-16 2007-11-14 サーノフ コーポレーション ラッチアップ耐性のための高保持電流を有する静電放電保護構造
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JP5265951B2 (ja) 2008-03-27 2013-08-14 ルネサスエレクトロニクス株式会社 保護回路
US8247839B2 (en) 2008-07-09 2012-08-21 Sofics Bvba ESD protection device with increased holding voltage during normal operation

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