TW201145488A - High holding voltage device - Google Patents
High holding voltage device Download PDFInfo
- Publication number
- TW201145488A TW201145488A TW100105853A TW100105853A TW201145488A TW 201145488 A TW201145488 A TW 201145488A TW 100105853 A TW100105853 A TW 100105853A TW 100105853 A TW100105853 A TW 100105853A TW 201145488 A TW201145488 A TW 201145488A
- Authority
- TW
- Taiwan
- Prior art keywords
- region
- doped region
- low
- protection circuit
- highly doped
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
- H10D89/713—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base region coupled to the collector region of the other transistor, e.g. silicon controlled rectifier [SCR] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Thyristors (AREA)
- Bipolar Integrated Circuits (AREA)
- Emergency Protection Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US30665810P | 2010-02-22 | 2010-02-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201145488A true TW201145488A (en) | 2011-12-16 |
Family
ID=44370630
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100105853A TW201145488A (en) | 2010-02-22 | 2011-02-22 | High holding voltage device |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8653557B2 (enExample) |
| EP (1) | EP2539934B1 (enExample) |
| JP (1) | JP5904644B2 (enExample) |
| CN (1) | CN102884624B (enExample) |
| TW (1) | TW201145488A (enExample) |
| WO (1) | WO2011101484A2 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6187984B2 (ja) * | 2012-02-07 | 2017-08-30 | ソフィックス ビーヴィービーエー | 交互伝導タイプの領域を有する静電放電保護用の半導体デバイス |
| CN102569294B (zh) * | 2012-02-28 | 2016-01-13 | 北京燕东微电子有限公司 | 提高静电保护器件维持电压的方法 |
| FR2987938A1 (fr) * | 2012-03-12 | 2013-09-13 | St Microelectronics Sa | Dispositif electronique de protection contre les decharges electrostatiques, a structure concentrique |
| KR101975894B1 (ko) | 2012-12-04 | 2019-08-28 | 삼성전자주식회사 | 정전기 방전 보호 장치 |
| US9502890B2 (en) | 2013-05-22 | 2016-11-22 | Freescale Semiconductor, Inc. | Protection device and related fabrication methods |
| US9129806B2 (en) | 2013-05-22 | 2015-09-08 | Freescale Semiconductor Inc. | Protection device and related fabrication methods |
| JP6052068B2 (ja) * | 2013-06-07 | 2016-12-27 | 株式会社デンソー | 半導体装置の保護回路 |
| US9543420B2 (en) | 2013-07-19 | 2017-01-10 | Nxp Usa, Inc. | Protection device and related fabrication methods |
| US9685431B2 (en) * | 2013-09-27 | 2017-06-20 | Sofics Bvba | Semiconductor device for electrostatic discharge protection |
| TWI548060B (zh) * | 2014-04-23 | 2016-09-01 | 立錡科技股份有限公司 | 為高電壓積體電路提供靜電防護的矽控整流器 |
| US9287255B2 (en) | 2014-07-09 | 2016-03-15 | Freescale Semiconductor Inc. | ESD protection device and related fabrication methods |
| KR102238544B1 (ko) | 2014-12-08 | 2021-04-09 | 삼성전자주식회사 | 정전기 방전 보호 장치 및 이를 포함하는 전자 장치 |
| CN104538436A (zh) * | 2015-01-05 | 2015-04-22 | 武汉新芯集成电路制造有限公司 | 一种高保持电压的可控硅整流器 |
| EP3116027A1 (en) * | 2015-07-10 | 2017-01-11 | Nxp B.V. | An electrostatic discharge protection device comprising a silicon controlled rectifier |
| CN105655333A (zh) * | 2016-03-30 | 2016-06-08 | 中国电子科技集团公司第二十四研究所 | 一种高维持电压的双向scr保护结构 |
| EP3451379A1 (en) * | 2017-09-01 | 2019-03-06 | NXP USA, Inc. | Electrostatic discharge protection circuit with a bi-directional silicon controlled rectifier (scr) |
| CN109979931B (zh) * | 2017-12-28 | 2020-11-10 | 无锡华润上华科技有限公司 | 一种双向静电放电保护器件 |
| CN111785717B (zh) * | 2019-04-04 | 2023-05-26 | 中芯国际集成电路制造(上海)有限公司 | Scr静电保护结构及其形成方法 |
| CN113497027B (zh) * | 2020-04-03 | 2024-03-26 | 长鑫存储技术有限公司 | 半导体器件 |
| EP3951884A1 (en) * | 2020-08-05 | 2022-02-09 | Nexperia B.V. | A semiconductor device and a method of manufacture of a semiconductor device |
| CN117790500B (zh) * | 2024-02-19 | 2024-05-10 | 成都芯翼科技有限公司 | 一种用于m-lvds端口的静电放电保护结构 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58119670A (ja) | 1982-01-11 | 1983-07-16 | Nissan Motor Co Ltd | 半導体装置 |
| US4939616A (en) | 1988-11-01 | 1990-07-03 | Texas Instruments Incorporated | Circuit structure with enhanced electrostatic discharge protection |
| US5274262A (en) | 1989-05-17 | 1993-12-28 | David Sarnoff Research Center, Inc. | SCR protection structure and circuit with reduced trigger voltage |
| US5465189A (en) | 1990-03-05 | 1995-11-07 | Texas Instruments Incorporated | Low voltage triggering semiconductor controlled rectifiers |
| US5268588A (en) | 1992-09-30 | 1993-12-07 | Texas Instruments Incorporated | Semiconductor structure for electrostatic discharge protection |
| US5343053A (en) | 1993-05-21 | 1994-08-30 | David Sarnoff Research Center Inc. | SCR electrostatic discharge protection for integrated circuits |
| US5493133A (en) | 1994-06-30 | 1996-02-20 | Texas Instruments Incorporated | PNP punchthrough-assisted protection device for special applications in CMOS technologies |
| JPH09162298A (ja) | 1995-12-12 | 1997-06-20 | Fujitsu Ltd | 半導体装置 |
| US6172404B1 (en) | 1997-10-31 | 2001-01-09 | Texas Instruments Incorporated | Tuneable holding voltage SCR ESD protection |
| TW411607B (en) | 1998-12-02 | 2000-11-11 | Winbond Electronics Corp | Electrostatic discharge protection circuit |
| US5962876A (en) | 1998-04-06 | 1999-10-05 | Winbond Electronics Corporation | Low voltage triggering electrostatic discharge protection circuit |
| TW393755B (en) | 1998-09-02 | 2000-06-11 | Winbond Electronics Corp | The electrostatic protecting structure of semiconductor |
| US6268639B1 (en) * | 1999-02-11 | 2001-07-31 | Xilinx, Inc. | Electrostatic-discharge protection circuit |
| ATE456861T1 (de) | 1999-06-01 | 2010-02-15 | Imec | Esd-schutz-bauteil für mittlere triggerspannung |
| US6420221B1 (en) * | 2000-02-22 | 2002-07-16 | Taiwan Semiconductor Manufacturing Company | Method of manufacturing a highly latchup-immune CMOS I/O structure |
| US6538266B2 (en) * | 2000-08-11 | 2003-03-25 | Samsung Electronics Co., Ltd. | Protection device with a silicon-controlled rectifier |
| US6433368B1 (en) | 2001-01-22 | 2002-08-13 | National Semiconductor Corporation | LVTSCR with a holding voltage that is greater than a DC bias voltage on a to-be-protected node |
| JP4005920B2 (ja) | 2001-03-16 | 2007-11-14 | サーノフ コーポレーション | ラッチアップ耐性のための高保持電流を有する静電放電保護構造 |
| US6441439B1 (en) | 2001-05-30 | 2002-08-27 | Winbond Electronic Corp. | Low-voltage triggering pseudo bipolar ESD protection device for positive/negative signal input pads |
| US6822294B1 (en) | 2001-06-29 | 2004-11-23 | National Semiconductor Corporation | High holding voltage LVTSCR |
| US20040100745A1 (en) | 2002-11-21 | 2004-05-27 | Industrial Technology Research Institute | Silicon-controlled rectifier with dynamic holding voltage for on-chip electrostatic discharge protection |
| JP3851893B2 (ja) | 2003-08-27 | 2006-11-29 | 株式会社東芝 | 半導体集積回路装置 |
| US7285828B2 (en) * | 2005-01-12 | 2007-10-23 | Intersail Americas Inc. | Electrostatic discharge protection device for digital circuits and for applications with input/output bipolar voltage much higher than the core circuit power supply |
| US20070002508A1 (en) | 2005-03-30 | 2007-01-04 | Pieter Vanysacker | Electrostatic discharge protection circuit |
| US7825473B2 (en) * | 2005-07-21 | 2010-11-02 | Industrial Technology Research Institute | Initial-on SCR device for on-chip ESD protection |
| JP5265951B2 (ja) | 2008-03-27 | 2013-08-14 | ルネサスエレクトロニクス株式会社 | 保護回路 |
| US8247839B2 (en) | 2008-07-09 | 2012-08-21 | Sofics Bvba | ESD protection device with increased holding voltage during normal operation |
-
2011
- 2011-02-17 US US13/029,560 patent/US8653557B2/en active Active
- 2011-02-22 TW TW100105853A patent/TW201145488A/zh unknown
- 2011-02-22 WO PCT/EP2011/052576 patent/WO2011101484A2/en not_active Ceased
- 2011-02-22 CN CN201180009779.8A patent/CN102884624B/zh active Active
- 2011-02-22 JP JP2012553345A patent/JP5904644B2/ja active Active
- 2011-02-22 EP EP11704784.5A patent/EP2539934B1/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US8653557B2 (en) | 2014-02-18 |
| CN102884624B (zh) | 2015-08-26 |
| WO2011101484A2 (en) | 2011-08-25 |
| EP2539934A2 (en) | 2013-01-02 |
| JP2013520789A (ja) | 2013-06-06 |
| US20110204415A1 (en) | 2011-08-25 |
| CN102884624A (zh) | 2013-01-16 |
| EP2539934B1 (en) | 2020-12-16 |
| JP5904644B2 (ja) | 2016-04-13 |
| WO2011101484A3 (en) | 2011-11-24 |
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