DE69941977D1 - ESD-Schutz-Bauteil für mittlere Triggerspannung - Google Patents

ESD-Schutz-Bauteil für mittlere Triggerspannung

Info

Publication number
DE69941977D1
DE69941977D1 DE69941977T DE69941977T DE69941977D1 DE 69941977 D1 DE69941977 D1 DE 69941977D1 DE 69941977 T DE69941977 T DE 69941977T DE 69941977 T DE69941977 T DE 69941977T DE 69941977 D1 DE69941977 D1 DE 69941977D1
Authority
DE
Germany
Prior art keywords
trigger
components
voltages
esd protection
trigger voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69941977T
Other languages
English (en)
Inventor
Guido Groeseneken
Christian Russ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Interuniversitair Microelektronica Centrum vzw IMEC
STMicroelectronics NV
Original Assignee
Interuniversitair Microelektronica Centrum vzw IMEC
STMicroelectronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Interuniversitair Microelektronica Centrum vzw IMEC, STMicroelectronics NV filed Critical Interuniversitair Microelektronica Centrum vzw IMEC
Application granted granted Critical
Publication of DE69941977D1 publication Critical patent/DE69941977D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
DE69941977T 1999-06-01 1999-06-01 ESD-Schutz-Bauteil für mittlere Triggerspannung Expired - Lifetime DE69941977D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP99870110A EP1058308B8 (de) 1999-06-01 1999-06-01 ESD-Schutz-Bauteil für mittlere Triggerspannung

Publications (1)

Publication Number Publication Date
DE69941977D1 true DE69941977D1 (de) 2010-03-18

Family

ID=8243840

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69941977T Expired - Lifetime DE69941977D1 (de) 1999-06-01 1999-06-01 ESD-Schutz-Bauteil für mittlere Triggerspannung

Country Status (4)

Country Link
US (1) US6570226B1 (de)
EP (1) EP1058308B8 (de)
AT (1) ATE456861T1 (de)
DE (1) DE69941977D1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002124580A (ja) * 2000-10-18 2002-04-26 Yamaha Corp 入力保護回路
DE10111462A1 (de) * 2001-03-09 2002-09-19 Infineon Technologies Ag Thyristorstruktur und Überspannungsschutzanordnung mit einer solchen Thyristorstruktur
JP4137510B2 (ja) * 2001-05-17 2008-08-20 セイコーインスツル株式会社 差動増幅回路を有する半導体装置
US6664909B1 (en) * 2001-08-13 2003-12-16 Impinj, Inc. Method and apparatus for trimming high-resolution digital-to-analog converter
KR100431066B1 (ko) * 2001-09-27 2004-05-12 삼성전자주식회사 정전 방전 보호 기능을 가진 반도체 장치
EP1432035B1 (de) 2002-12-20 2018-07-25 IMEC vzw Schutzbauelement gegen elektrostatische Entladung
DE10335383A1 (de) * 2003-07-28 2005-02-24 Atmel Germany Gmbh Monolithisch integrierbare Schaltungsanordnung zum Überspannungsschutz
US20050083618A1 (en) * 2003-10-21 2005-04-21 Steinhoff Robert M. ESD protection for integrated circuits
US7245466B2 (en) 2003-10-21 2007-07-17 Texas Instruments Incorporated Pumped SCR for ESD protection
US7804670B2 (en) 2005-01-07 2010-09-28 Semiconductor Components Industries, L.L.C. Hybrid ESD clamp
DE102005019305B4 (de) 2005-04-26 2010-04-22 Infineon Technologies Ag ESD-Schutzstruktur mit Diodenreihenschaltung und Halbleiterschaltung mit derselben
US7355250B2 (en) * 2005-09-08 2008-04-08 System General Corp. Electrostatic discharge device with controllable holding current
DE102005056908B4 (de) 2005-11-29 2008-02-28 Infineon Technologies Ag Integrierte Schaltungsanordnung mit Shockleydiode oder Thyristor und Verfahren zum Herstellen
US7709896B2 (en) * 2006-03-08 2010-05-04 Infineon Technologies Ag ESD protection device and method
US8247839B2 (en) * 2008-07-09 2012-08-21 Sofics Bvba ESD protection device with increased holding voltage during normal operation
US8653557B2 (en) * 2010-02-22 2014-02-18 Sofics Bvba High holding voltage electrostatic discharge (ESD) device
US9041054B2 (en) 2010-02-22 2015-05-26 Sofics Bvba High holding voltage electrostatic discharge protection device
CN112466939A (zh) * 2020-11-26 2021-03-09 中国科学院微电子研究所 一种具有静电放电保护功能的可控硅器件
CN113871383B (zh) * 2021-09-24 2023-08-18 电子科技大学 一种反向二极管降低触发电压的改进型lvtscr器件

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4760433A (en) * 1986-01-31 1988-07-26 Harris Corporation ESD protection transistors
US5591661A (en) * 1992-04-07 1997-01-07 Shiota; Philip Method for fabricating devices for electrostatic discharge protection and voltage references, and the resulting structures
JPH07122650A (ja) * 1993-10-22 1995-05-12 Yamaha Corp 半導体装置
US6078083A (en) * 1994-05-16 2000-06-20 Texas Instruments Incorporated ESD protection circuit for dual 3V/5V supply devices using single thickness gate oxides
US5602404A (en) * 1995-01-18 1997-02-11 National Semiconductor Corporation Low voltage triggering silicon controlled rectifier structures for ESD protection
JP2882309B2 (ja) * 1995-04-28 1999-04-12 日本電気株式会社 入力保護回路及び半導体集積回路装置の製造方法
KR100496362B1 (ko) * 1995-07-11 2006-05-02 텍사스 인스트루먼츠 인코포레이티드 기판트리거된래터럴npn을이용한집적esd보호회로
JPH09162298A (ja) * 1995-12-12 1997-06-20 Fujitsu Ltd 半導体装置
US5821572A (en) * 1996-12-17 1998-10-13 Symbios, Inc. Simple BICMOS process for creation of low trigger voltage SCR and zener diode pad protection
US5898205A (en) * 1997-07-11 1999-04-27 Taiwan Semiconductor Manufacturing Co. Ltd. Enhanced ESD protection circuitry

Also Published As

Publication number Publication date
EP1058308A1 (de) 2000-12-06
ATE456861T1 (de) 2010-02-15
EP1058308B8 (de) 2010-04-07
US6570226B1 (en) 2003-05-27
EP1058308B1 (de) 2010-01-27

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: IMEC, LEUVEN, BE

Owner name: STMICROELECTRONICS N.V., SCHIPHOL AIRPORT, NL

8364 No opposition during term of opposition