DE69311627T2 - Schutzvorrichtung einer integrierten Schaltung gegen elektrostatische Entladungen - Google Patents

Schutzvorrichtung einer integrierten Schaltung gegen elektrostatische Entladungen

Info

Publication number
DE69311627T2
DE69311627T2 DE69311627T DE69311627T DE69311627T2 DE 69311627 T2 DE69311627 T2 DE 69311627T2 DE 69311627 T DE69311627 T DE 69311627T DE 69311627 T DE69311627 T DE 69311627T DE 69311627 T2 DE69311627 T2 DE 69311627T2
Authority
DE
Germany
Prior art keywords
integrated circuit
protection device
electrostatic discharge
circuit protection
device against
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69311627T
Other languages
English (en)
Other versions
DE69311627D1 (de
Inventor
Francois Tailliet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Application granted granted Critical
Publication of DE69311627D1 publication Critical patent/DE69311627D1/de
Publication of DE69311627T2 publication Critical patent/DE69311627T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thyristors (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Protection Of Static Devices (AREA)
DE69311627T 1992-04-30 1993-04-22 Schutzvorrichtung einer integrierten Schaltung gegen elektrostatische Entladungen Expired - Fee Related DE69311627T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9205422A FR2690786A1 (fr) 1992-04-30 1992-04-30 Dispositif de protection d'un circuit intégré contre les décharges électrostatiques.

Publications (2)

Publication Number Publication Date
DE69311627D1 DE69311627D1 (de) 1997-07-24
DE69311627T2 true DE69311627T2 (de) 1997-10-09

Family

ID=9429468

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69311627T Expired - Fee Related DE69311627T2 (de) 1992-04-30 1993-04-22 Schutzvorrichtung einer integrierten Schaltung gegen elektrostatische Entladungen

Country Status (5)

Country Link
US (2) US5548134A (de)
EP (1) EP0568421B1 (de)
JP (1) JPH0662529A (de)
DE (1) DE69311627T2 (de)
FR (1) FR2690786A1 (de)

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FR2690786A1 (fr) * 1992-04-30 1993-10-29 Sgs Thomson Microelectronics Sa Dispositif de protection d'un circuit intégré contre les décharges électrostatiques.
US6078083A (en) * 1994-05-16 2000-06-20 Texas Instruments Incorporated ESD protection circuit for dual 3V/5V supply devices using single thickness gate oxides
EP0704889A3 (de) * 1994-09-29 1998-10-21 Siemens Aktiengesellschaft Leistungshalbleiterbauelement mit monolithisch integriertem Messwiderstand und Verfahren zu dessen Herstellung
US5747834A (en) * 1995-09-29 1998-05-05 Texas Instruments Inc Adjustable Bipolar SCR holding voltage for ESD protection circuits in high speed Bipolar/BiCMOS circuits
EP0785576A3 (de) * 1995-09-29 1998-10-07 Texas Instruments Incorporated Schaltung mit einem Schutzmittel
KR100222078B1 (ko) * 1996-11-02 1999-10-01 윤종용 최소면적에 형성되는 정전기 보호 회로
AU4726197A (en) * 1996-11-07 1998-05-29 Hitachi Limited Semiconductor integrated circuit device and its manufacture
JP3732908B2 (ja) * 1996-12-27 2006-01-11 三洋電機株式会社 半導体集積回路
JP3557510B2 (ja) * 1997-06-30 2004-08-25 沖電気工業株式会社 半導体装置
US5977639A (en) * 1997-09-30 1999-11-02 Intel Corporation Metal staples to prevent interlayer delamination
US5936284A (en) 1997-11-03 1999-08-10 Sgs-Thomson Microelectronics S.R.L. Electrostatic discharge protection circuit and transistor
US6137144A (en) * 1998-04-08 2000-10-24 Texas Instruments Incorporated On-chip ESD protection in dual voltage CMOS
KR100493006B1 (ko) * 1998-06-16 2005-08-04 삼성전자주식회사 정전기보호역할을겸하는블락가드링구조
GB9817120D0 (en) * 1998-08-07 1998-10-07 Abb Power T & D Limited Improvements in or relating to electronic components
US6825504B2 (en) * 1999-05-03 2004-11-30 Hitachi, Ltd. Semiconductor integrated circuit device and method of manufacturing the same
US6304423B1 (en) * 1999-06-08 2001-10-16 Delphi Technologies, Inc. Input protection circuit for a semiconductor device
DE10005811A1 (de) * 2000-02-10 2001-08-23 Micronas Gmbh Laterale Thyristorstruktur zum Schutz vor elektrostatischer Entladung
US6700164B1 (en) * 2000-07-07 2004-03-02 International Business Machines Corporation Tungsten hot wire current limiter for ESD protection
US6611025B2 (en) * 2001-09-05 2003-08-26 Winbond Electronics Corp. Apparatus and method for improved power bus ESD protection
AU2002304066A1 (en) * 2002-05-24 2003-12-12 National Institute Of Advanced Industrial Science And Technology Electric signal transmission line
US6720622B1 (en) * 2002-07-05 2004-04-13 Taiwan Semiconductor Manufacturing Company SCR-ESD structures with shallow trench isolation
JP3810375B2 (ja) 2003-03-14 2006-08-16 ローム株式会社 半導体装置
US9842629B2 (en) 2004-06-25 2017-12-12 Cypress Semiconductor Corporation Memory cell array latchup prevention
US7773442B2 (en) 2004-06-25 2010-08-10 Cypress Semiconductor Corporation Memory cell array latchup prevention
KR100679943B1 (ko) * 2004-11-10 2007-02-08 주식회사 하이닉스반도체 낮은 촉발전압에서 동작이 가능한 실리콘제어정류기구조의 정전기방전 보호 회로
US7230807B2 (en) * 2004-12-15 2007-06-12 Vice Michael W Protection circuit for a transistor
US7417287B2 (en) * 2005-07-01 2008-08-26 System General Corp. Electrostatic discharge device having controllable trigger voltage
JP5595751B2 (ja) * 2009-03-11 2014-09-24 ルネサスエレクトロニクス株式会社 Ｅｓｄ保護素子
EP2230736B1 (de) * 2009-03-20 2014-12-17 ABB Research Ltd. Verkapselungssystem für einphasige verkapselte Schaltanlage
CN102569267A (zh) * 2010-12-08 2012-07-11 凹凸电子（武汉）有限公司 集成电路、信号传输方法以及集成电路制造方法
DE102011018450B4 (de) 2011-04-21 2017-08-31 Infineon Technologies Ag Halbleiterbauelement mit durchgeschalteten parasitären Thyristor bei einem Lichtangriff und Halbleiterbauelement mit Alarmschaltung für einen Lichtangriff
US8878334B1 (en) 2012-03-23 2014-11-04 Altera Corporation Integrated circuit resistors with reduced parasitic capacitance
JP7007564B2 (ja) * 2017-11-10 2022-01-24 ミツミ電機株式会社 レギュレータ用半導体集積回路
US10861848B2 (en) * 2018-08-23 2020-12-08 Xilinx, Inc. Single event latch-up (SEL) mitigation techniques
US11037921B2 (en) * 2019-10-15 2021-06-15 Nanya Technology Corporation Off chip driver structure

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Publication number Priority date Publication date Assignee Title
JPS57130461A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Semiconductor memory storage
JPS5961169A (ja) * 1982-09-30 1984-04-07 Fujitsu Ltd 半導体装置
US4633283A (en) * 1985-03-11 1986-12-30 Rca Corporation Circuit and structure for protecting integrated circuits from destructive transient voltages
JPS62101067A (ja) * 1985-10-28 1987-05-11 Nec Corp 入力保護装置
JPH0722129B2 (ja) * 1985-10-28 1995-03-08 株式会社日立製作所 酸化・拡散装置内ウエハ温度制御システム
US5012317A (en) * 1986-04-11 1991-04-30 Texas Instruments Incorporated Electrostatic discharge protection circuit
FR2623016B1 (fr) * 1987-11-06 1991-06-14 Thomson Semiconducteurs Dispositif de fusion d'un fusible dans un circuit integre de type cmos
FR2623018B1 (fr) * 1987-11-06 1990-02-09 Thomson Semiconducteurs Circuit integre protege contre les decharges electrostatiques avec seuil de protection variable
US4939616A (en) * 1988-11-01 1990-07-03 Texas Instruments Incorporated Circuit structure with enhanced electrostatic discharge protection
ES2078343T3 (es) * 1989-05-17 1995-12-16 Sarnoff David Res Center Dispositivo de proteccion scr de bajo voltaje de disparo y estructura.
US5274262A (en) * 1989-05-17 1993-12-28 David Sarnoff Research Center, Inc. SCR protection structure and circuit with reduced trigger voltage
JPH0330363A (ja) * 1989-06-27 1991-02-08 Fuji Electric Co Ltd 入出力保護回路を備えた半導体集積回路装置
FR2649830B1 (fr) * 1989-07-13 1994-05-27 Sgs Thomson Microelectronics Structure de circuit integre cmos protege contre les decharges electrostatiques
US5032742A (en) * 1989-07-28 1991-07-16 Dallas Semiconductor Corporation ESD circuit for input which exceeds power supplies in normal operation
FR2660795B1 (fr) * 1990-04-10 1994-01-07 Sgs Thomson Microelectronics Sa Circuit de detection de fusible.
US5032741A (en) * 1990-06-04 1991-07-16 Motorola, Inc. CDCFL logic circuits having shared loads
FR2676870B1 (fr) * 1991-05-24 1994-12-23 Sgs Thomson Microelectronics Structure de protection dans un circuit cmos contre le verrouillage.
US5272371A (en) * 1991-11-19 1993-12-21 Sgs-Thomson Microelectronics, Inc. Electrostatic discharge protection structure
FR2685817B1 (fr) * 1991-12-31 1994-03-11 Sgs Thomson Microelectronics Sa Protection generale d'un circuit integre contre les surcharges permanentes et decharges electrostatiques.
FR2690786A1 (fr) * 1992-04-30 1993-10-29 Sgs Thomson Microelectronics Sa Dispositif de protection d'un circuit intégré contre les décharges électrostatiques.
JP2850801B2 (ja) * 1995-07-28 1999-01-27 日本電気株式会社 半導体素子
US5663860A (en) * 1996-06-28 1997-09-02 Harris Corporation High voltage protection circuits

Also Published As

Publication number Publication date
US5548134A (en) 1996-08-20
EP0568421B1 (de) 1997-06-18
EP0568421A1 (de) 1993-11-03
JPH0662529A (ja) 1994-03-04
US5903424A (en) 1999-05-11
DE69311627D1 (de) 1997-07-24
FR2690786A1 (fr) 1993-10-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee