DE69131183D1 - Schutzanordnung gegen elektostatische entladungen - Google Patents
Schutzanordnung gegen elektostatische entladungenInfo
- Publication number
- DE69131183D1 DE69131183D1 DE69131183T DE69131183T DE69131183D1 DE 69131183 D1 DE69131183 D1 DE 69131183D1 DE 69131183 T DE69131183 T DE 69131183T DE 69131183 T DE69131183 T DE 69131183T DE 69131183 D1 DE69131183 D1 DE 69131183D1
- Authority
- DE
- Germany
- Prior art keywords
- electostatic
- discharge
- protective arrangement
- arrangement against
- protective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000001681 protective effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/601,974 US5138413A (en) | 1990-10-22 | 1990-10-22 | Piso electrostatic discharge protection device |
PCT/US1991/007544 WO1992007384A1 (en) | 1990-10-22 | 1991-10-15 | Piso electrostatic discharge protection device |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69131183D1 true DE69131183D1 (de) | 1999-06-02 |
DE69131183T2 DE69131183T2 (de) | 1999-11-18 |
Family
ID=24409475
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69131183T Expired - Fee Related DE69131183T2 (de) | 1990-10-22 | 1991-10-15 | Schutzanordnung gegen elektostatische entladungen |
Country Status (5)
Country | Link |
---|---|
US (1) | US5138413A (de) |
EP (1) | EP0564473B1 (de) |
JP (1) | JP3404036B2 (de) |
DE (1) | DE69131183T2 (de) |
WO (1) | WO1992007384A1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5304839A (en) * | 1990-12-04 | 1994-04-19 | At&T Bell Laboratories | Bipolar ESD protection for integrated circuits |
US5594611A (en) * | 1994-01-12 | 1997-01-14 | Lsi Logic Corporation | Integrated circuit input/output ESD protection circuit with gate voltage regulation and parasitic zener and junction diode |
JPH088391A (ja) * | 1994-06-17 | 1996-01-12 | Mitsubishi Electric Corp | 半導体回路 |
US5597758A (en) * | 1994-08-01 | 1997-01-28 | Motorola, Inc. | Method for forming an electrostatic discharge protection device |
JPH08274184A (ja) * | 1995-03-31 | 1996-10-18 | Toshiba Microelectron Corp | 半導体集積回路の保護回路装置 |
US5663860A (en) * | 1996-06-28 | 1997-09-02 | Harris Corporation | High voltage protection circuits |
JP2000223499A (ja) * | 1999-01-28 | 2000-08-11 | Mitsumi Electric Co Ltd | 静電保護装置 |
CN103250250B (zh) | 2010-12-06 | 2016-08-10 | 富士电机株式会社 | 半导体器件 |
JP5925445B2 (ja) * | 2011-08-19 | 2016-05-25 | エスアイアイ・セミコンダクタ株式会社 | 半導体装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3667009A (en) * | 1970-12-28 | 1972-05-30 | Motorola Inc | Complementary metal oxide semiconductor gate protection diode |
US3817794A (en) * | 1971-08-02 | 1974-06-18 | Bell Telephone Labor Inc | Method for making high-gain transistors |
US3787717A (en) * | 1971-12-09 | 1974-01-22 | Ibm | Over voltage protection circuit lateral bipolar transistor with gated collector junction |
US4066918A (en) * | 1976-09-30 | 1978-01-03 | Rca Corporation | Protection circuitry for insulated-gate field-effect transistor (IGFET) circuits |
YU43752B (en) * | 1978-10-16 | 1989-12-31 | Marko Petrovic | Transistorized voltage limiter |
JPS5679463A (en) * | 1979-12-03 | 1981-06-30 | Matsushita Electronics Corp | Semiconductor integrated circuit |
US4312524A (en) * | 1979-12-07 | 1982-01-26 | Aeroquip Corporation | Self-aligning coupling |
GB2148589B (en) * | 1983-10-18 | 1987-04-23 | Standard Telephones Cables Ltd | Improvements in intergrated circuits |
US4757363A (en) * | 1984-09-14 | 1988-07-12 | Harris Corporation | ESD protection network for IGFET circuits with SCR prevention guard rings |
FR2575333B1 (fr) * | 1984-12-21 | 1987-01-23 | Radiotechnique Compelec | Dispositif de protection d'un circuit integre contre les decharges electrostatiques |
JPS61187374A (ja) * | 1985-02-15 | 1986-08-21 | Agency Of Ind Science & Technol | サ−ジ吸収素子 |
US4975751A (en) * | 1985-09-09 | 1990-12-04 | Harris Corporation | High breakdown active device structure with low series resistance |
US4736271A (en) * | 1987-06-23 | 1988-04-05 | Signetics Corporation | Protection device utilizing one or more subsurface diodes and associated method of manufacture |
US4922371A (en) * | 1988-11-01 | 1990-05-01 | Teledyne Semiconductor | ESD protection circuit for MOS integrated circuits |
US4896243A (en) * | 1988-12-20 | 1990-01-23 | Texas Instruments Incorporated | Efficient ESD input protection scheme |
US5021858A (en) * | 1990-05-25 | 1991-06-04 | Hall John H | Compound modulated integrated transistor structure |
-
1990
- 1990-10-22 US US07/601,974 patent/US5138413A/en not_active Expired - Lifetime
-
1991
- 1991-10-15 JP JP50070592A patent/JP3404036B2/ja not_active Expired - Fee Related
- 1991-10-15 DE DE69131183T patent/DE69131183T2/de not_active Expired - Fee Related
- 1991-10-15 WO PCT/US1991/007544 patent/WO1992007384A1/en active IP Right Grant
- 1991-10-15 EP EP92900037A patent/EP0564473B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0564473A4 (de) | 1992-12-07 |
EP0564473B1 (de) | 1999-04-28 |
EP0564473A1 (de) | 1993-10-13 |
JP3404036B2 (ja) | 2003-05-06 |
US5138413A (en) | 1992-08-11 |
JPH05503400A (ja) | 1993-06-03 |
DE69131183T2 (de) | 1999-11-18 |
WO1992007384A1 (en) | 1992-04-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |