CN102884624B - 高保持电压器件 - Google Patents

高保持电压器件 Download PDF

Info

Publication number
CN102884624B
CN102884624B CN201180009779.8A CN201180009779A CN102884624B CN 102884624 B CN102884624 B CN 102884624B CN 201180009779 A CN201180009779 A CN 201180009779A CN 102884624 B CN102884624 B CN 102884624B
Authority
CN
China
Prior art keywords
region
doped region
highly doped
protection circuit
well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201180009779.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN102884624A (zh
Inventor
斯文·范韦梅尔斯
奥利维耶·马里沙尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sofics Bvba
Original Assignee
Sofics Bvba
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sofics Bvba filed Critical Sofics Bvba
Publication of CN102884624A publication Critical patent/CN102884624A/zh
Application granted granted Critical
Publication of CN102884624B publication Critical patent/CN102884624B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • H10D89/713—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base region coupled to the collector region of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thyristors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
CN201180009779.8A 2010-02-22 2011-02-22 高保持电压器件 Active CN102884624B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US30665810P 2010-02-22 2010-02-22
US61/306,658 2010-02-22
PCT/EP2011/052576 WO2011101484A2 (en) 2010-02-22 2011-02-22 High holding voltage device

Publications (2)

Publication Number Publication Date
CN102884624A CN102884624A (zh) 2013-01-16
CN102884624B true CN102884624B (zh) 2015-08-26

Family

ID=44370630

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180009779.8A Active CN102884624B (zh) 2010-02-22 2011-02-22 高保持电压器件

Country Status (6)

Country Link
US (1) US8653557B2 (enExample)
EP (1) EP2539934B1 (enExample)
JP (1) JP5904644B2 (enExample)
CN (1) CN102884624B (enExample)
TW (1) TW201145488A (enExample)
WO (1) WO2011101484A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105655333A (zh) * 2016-03-30 2016-06-08 中国电子科技集团公司第二十四研究所 一种高维持电压的双向scr保护结构

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6187984B2 (ja) * 2012-02-07 2017-08-30 ソフィックス ビーヴィービーエー 交互伝導タイプの領域を有する静電放電保護用の半導体デバイス
CN102569294B (zh) * 2012-02-28 2016-01-13 北京燕东微电子有限公司 提高静电保护器件维持电压的方法
FR2987938A1 (fr) * 2012-03-12 2013-09-13 St Microelectronics Sa Dispositif electronique de protection contre les decharges electrostatiques, a structure concentrique
KR101975894B1 (ko) 2012-12-04 2019-08-28 삼성전자주식회사 정전기 방전 보호 장치
US9502890B2 (en) 2013-05-22 2016-11-22 Freescale Semiconductor, Inc. Protection device and related fabrication methods
US9129806B2 (en) 2013-05-22 2015-09-08 Freescale Semiconductor Inc. Protection device and related fabrication methods
JP6052068B2 (ja) * 2013-06-07 2016-12-27 株式会社デンソー 半導体装置の保護回路
US9543420B2 (en) 2013-07-19 2017-01-10 Nxp Usa, Inc. Protection device and related fabrication methods
US9685431B2 (en) * 2013-09-27 2017-06-20 Sofics Bvba Semiconductor device for electrostatic discharge protection
TWI548060B (zh) * 2014-04-23 2016-09-01 立錡科技股份有限公司 為高電壓積體電路提供靜電防護的矽控整流器
US9287255B2 (en) 2014-07-09 2016-03-15 Freescale Semiconductor Inc. ESD protection device and related fabrication methods
KR102238544B1 (ko) 2014-12-08 2021-04-09 삼성전자주식회사 정전기 방전 보호 장치 및 이를 포함하는 전자 장치
CN104538436A (zh) * 2015-01-05 2015-04-22 武汉新芯集成电路制造有限公司 一种高保持电压的可控硅整流器
EP3116027A1 (en) * 2015-07-10 2017-01-11 Nxp B.V. An electrostatic discharge protection device comprising a silicon controlled rectifier
EP3451379A1 (en) * 2017-09-01 2019-03-06 NXP USA, Inc. Electrostatic discharge protection circuit with a bi-directional silicon controlled rectifier (scr)
CN109979931B (zh) * 2017-12-28 2020-11-10 无锡华润上华科技有限公司 一种双向静电放电保护器件
CN111785717B (zh) * 2019-04-04 2023-05-26 中芯国际集成电路制造(上海)有限公司 Scr静电保护结构及其形成方法
CN113497027B (zh) * 2020-04-03 2024-03-26 长鑫存储技术有限公司 半导体器件
EP3951884A1 (en) * 2020-08-05 2022-02-09 Nexperia B.V. A semiconductor device and a method of manufacture of a semiconductor device
CN117790500B (zh) * 2024-02-19 2024-05-10 成都芯翼科技有限公司 一种用于m-lvds端口的静电放电保护结构

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6268639B1 (en) * 1999-02-11 2001-07-31 Xilinx, Inc. Electrostatic-discharge protection circuit
US20020017654A1 (en) * 2000-08-11 2002-02-14 Samsung Electronics Co., Ltd. Protection device with a silicon-controlled rectifier
US20060151836A1 (en) * 2005-01-12 2006-07-13 Intersil Americas Inc. Electrostatic discharge protection device for digital circuits and for applications with input/output bipolar voltage much higher than the core circuit power supply
US20070018193A1 (en) * 2005-07-21 2007-01-25 Industrial Technology Research Institute Initial-on SCR device for on-chip ESD protection

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58119670A (ja) 1982-01-11 1983-07-16 Nissan Motor Co Ltd 半導体装置
US4939616A (en) 1988-11-01 1990-07-03 Texas Instruments Incorporated Circuit structure with enhanced electrostatic discharge protection
US5274262A (en) 1989-05-17 1993-12-28 David Sarnoff Research Center, Inc. SCR protection structure and circuit with reduced trigger voltage
US5465189A (en) 1990-03-05 1995-11-07 Texas Instruments Incorporated Low voltage triggering semiconductor controlled rectifiers
US5268588A (en) 1992-09-30 1993-12-07 Texas Instruments Incorporated Semiconductor structure for electrostatic discharge protection
US5343053A (en) 1993-05-21 1994-08-30 David Sarnoff Research Center Inc. SCR electrostatic discharge protection for integrated circuits
US5493133A (en) 1994-06-30 1996-02-20 Texas Instruments Incorporated PNP punchthrough-assisted protection device for special applications in CMOS technologies
JPH09162298A (ja) 1995-12-12 1997-06-20 Fujitsu Ltd 半導体装置
US6172404B1 (en) 1997-10-31 2001-01-09 Texas Instruments Incorporated Tuneable holding voltage SCR ESD protection
TW411607B (en) 1998-12-02 2000-11-11 Winbond Electronics Corp Electrostatic discharge protection circuit
US5962876A (en) 1998-04-06 1999-10-05 Winbond Electronics Corporation Low voltage triggering electrostatic discharge protection circuit
TW393755B (en) 1998-09-02 2000-06-11 Winbond Electronics Corp The electrostatic protecting structure of semiconductor
ATE456861T1 (de) 1999-06-01 2010-02-15 Imec Esd-schutz-bauteil für mittlere triggerspannung
US6420221B1 (en) * 2000-02-22 2002-07-16 Taiwan Semiconductor Manufacturing Company Method of manufacturing a highly latchup-immune CMOS I/O structure
US6433368B1 (en) 2001-01-22 2002-08-13 National Semiconductor Corporation LVTSCR with a holding voltage that is greater than a DC bias voltage on a to-be-protected node
JP4005920B2 (ja) 2001-03-16 2007-11-14 サーノフ コーポレーション ラッチアップ耐性のための高保持電流を有する静電放電保護構造
US6441439B1 (en) 2001-05-30 2002-08-27 Winbond Electronic Corp. Low-voltage triggering pseudo bipolar ESD protection device for positive/negative signal input pads
US6822294B1 (en) 2001-06-29 2004-11-23 National Semiconductor Corporation High holding voltage LVTSCR
US20040100745A1 (en) 2002-11-21 2004-05-27 Industrial Technology Research Institute Silicon-controlled rectifier with dynamic holding voltage for on-chip electrostatic discharge protection
JP3851893B2 (ja) 2003-08-27 2006-11-29 株式会社東芝 半導体集積回路装置
US20070002508A1 (en) 2005-03-30 2007-01-04 Pieter Vanysacker Electrostatic discharge protection circuit
JP5265951B2 (ja) 2008-03-27 2013-08-14 ルネサスエレクトロニクス株式会社 保護回路
US8247839B2 (en) 2008-07-09 2012-08-21 Sofics Bvba ESD protection device with increased holding voltage during normal operation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6268639B1 (en) * 1999-02-11 2001-07-31 Xilinx, Inc. Electrostatic-discharge protection circuit
US20020017654A1 (en) * 2000-08-11 2002-02-14 Samsung Electronics Co., Ltd. Protection device with a silicon-controlled rectifier
US20060151836A1 (en) * 2005-01-12 2006-07-13 Intersil Americas Inc. Electrostatic discharge protection device for digital circuits and for applications with input/output bipolar voltage much higher than the core circuit power supply
US20070018193A1 (en) * 2005-07-21 2007-01-25 Industrial Technology Research Institute Initial-on SCR device for on-chip ESD protection

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105655333A (zh) * 2016-03-30 2016-06-08 中国电子科技集团公司第二十四研究所 一种高维持电压的双向scr保护结构

Also Published As

Publication number Publication date
TW201145488A (en) 2011-12-16
US8653557B2 (en) 2014-02-18
WO2011101484A2 (en) 2011-08-25
EP2539934A2 (en) 2013-01-02
JP2013520789A (ja) 2013-06-06
US20110204415A1 (en) 2011-08-25
CN102884624A (zh) 2013-01-16
EP2539934B1 (en) 2020-12-16
JP5904644B2 (ja) 2016-04-13
WO2011101484A3 (en) 2011-11-24

Similar Documents

Publication Publication Date Title
CN102884624B (zh) 高保持电压器件
US9041054B2 (en) High holding voltage electrostatic discharge protection device
US9881914B2 (en) Electrostatic discharge protection device
CN103975434B (zh) 高保持电压、混合电压域静电放电钳位
US7554839B2 (en) Symmetric blocking transient voltage suppressor (TVS) using bipolar transistor base snatch
US9685431B2 (en) Semiconductor device for electrostatic discharge protection
US20140167099A1 (en) Integrated circuit including silicon controlled rectifier
KR101315990B1 (ko) 정전기 방전 보호 장치
CN108807374B (zh) 一种高压双向瞬态电压抑制器
KR20150028723A (ko) 정전기 방전 보호 개선 장치
Fan et al. A method to prevent strong snapback in LDNMOS for ESD protection
CN107546223A (zh) 一种华夫饼型小岛式二极管触发可控硅静电防护器件
KR101349998B1 (ko) 정전기 방전 보호 장치
TWI435432B (zh) 靜電放電保護元件
KR102139088B1 (ko) 높은 홀딩 전류를 갖는 정전기 방전 보호소자
KR101258993B1 (ko) Ｅｓｄ 보호소자
CN116093104A (zh) 应用于直流/直流转换芯片的静电与浪涌防护电路
CN119789536A (zh) 一种双向可控硅结构
CN120568861A (zh) 三引脚电流触发tvs保护半导体器件
Liu Design Of Silicon Controlled Rectifers Sic] For Robust Electrostatic Discharge Protection Applications

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant