JP5904644B2 - 高保持電圧デバイス - Google Patents

高保持電圧デバイス Download PDF

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Publication number
JP5904644B2
JP5904644B2 JP2012553345A JP2012553345A JP5904644B2 JP 5904644 B2 JP5904644 B2 JP 5904644B2 JP 2012553345 A JP2012553345 A JP 2012553345A JP 2012553345 A JP2012553345 A JP 2012553345A JP 5904644 B2 JP5904644 B2 JP 5904644B2
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doped region
highly doped
well
protection circuit
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JP2013520789A5 (enExample
JP2013520789A (ja
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ウェイメールス， スヴェン ヴァン
ウェイメールス， スヴェン ヴァン
オリヴィエ マリシャル，
オリヴィエ マリシャル，
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ソフィックス ビーヴィービーエー
ソフィックス ビーヴィービーエー
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • H10D89/713—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base region coupled to the collector region of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thyristors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
JP2012553345A 2010-02-22 2011-02-22 高保持電圧デバイス Active JP5904644B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US30665810P 2010-02-22 2010-02-22
US61/306,658 2010-02-22
PCT/EP2011/052576 WO2011101484A2 (en) 2010-02-22 2011-02-22 High holding voltage device

Publications (3)

Publication Number Publication Date
JP2013520789A JP2013520789A (ja) 2013-06-06
JP2013520789A5 JP2013520789A5 (enExample) 2014-04-10
JP5904644B2 true JP5904644B2 (ja) 2016-04-13

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JP2012553345A Active JP5904644B2 (ja) 2010-02-22 2011-02-22 高保持電圧デバイス

Country Status (6)

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US (1) US8653557B2 (enExample)
EP (1) EP2539934B1 (enExample)
JP (1) JP5904644B2 (enExample)
CN (1) CN102884624B (enExample)
TW (1) TW201145488A (enExample)
WO (1) WO2011101484A2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2812922B1 (en) 2012-02-07 2023-12-20 Sofics BVBA Semiconductor device for electrostatic discharge protection having regions of alternating conductivity types
CN102569294B (zh) * 2012-02-28 2016-01-13 北京燕东微电子有限公司 提高静电保护器件维持电压的方法
FR2987938A1 (fr) * 2012-03-12 2013-09-13 St Microelectronics Sa Dispositif electronique de protection contre les decharges electrostatiques, a structure concentrique
KR101975894B1 (ko) 2012-12-04 2019-08-28 삼성전자주식회사 정전기 방전 보호 장치
US9502890B2 (en) 2013-05-22 2016-11-22 Freescale Semiconductor, Inc. Protection device and related fabrication methods
US9129806B2 (en) 2013-05-22 2015-09-08 Freescale Semiconductor Inc. Protection device and related fabrication methods
JP6052068B2 (ja) * 2013-06-07 2016-12-27 株式会社デンソー 半導体装置の保護回路
US9543420B2 (en) 2013-07-19 2017-01-10 Nxp Usa, Inc. Protection device and related fabrication methods
US9685431B2 (en) * 2013-09-27 2017-06-20 Sofics Bvba Semiconductor device for electrostatic discharge protection
TWI548060B (zh) * 2014-04-23 2016-09-01 立錡科技股份有限公司 為高電壓積體電路提供靜電防護的矽控整流器
US9287255B2 (en) 2014-07-09 2016-03-15 Freescale Semiconductor Inc. ESD protection device and related fabrication methods
KR102238544B1 (ko) 2014-12-08 2021-04-09 삼성전자주식회사 정전기 방전 보호 장치 및 이를 포함하는 전자 장치
CN104538436A (zh) * 2015-01-05 2015-04-22 武汉新芯集成电路制造有限公司 一种高保持电压的可控硅整流器
EP3116027A1 (en) 2015-07-10 2017-01-11 Nxp B.V. An electrostatic discharge protection device comprising a silicon controlled rectifier
CN105655333A (zh) * 2016-03-30 2016-06-08 中国电子科技集团公司第二十四研究所 一种高维持电压的双向scr保护结构
EP3451379A1 (en) * 2017-09-01 2019-03-06 NXP USA, Inc. Electrostatic discharge protection circuit with a bi-directional silicon controlled rectifier (scr)
CN109979931B (zh) * 2017-12-28 2020-11-10 无锡华润上华科技有限公司 一种双向静电放电保护器件
CN111785717B (zh) * 2019-04-04 2023-05-26 中芯国际集成电路制造(上海)有限公司 Scr静电保护结构及其形成方法
CN113497027B (zh) * 2020-04-03 2024-03-26 长鑫存储技术有限公司 半导体器件
EP3951884A1 (en) 2020-08-05 2022-02-09 Nexperia B.V. A semiconductor device and a method of manufacture of a semiconductor device
CN117790500B (zh) * 2024-02-19 2024-05-10 成都芯翼科技有限公司 一种用于m-lvds端口的静电放电保护结构

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58119670A (ja) 1982-01-11 1983-07-16 Nissan Motor Co Ltd 半導体装置
US4939616A (en) 1988-11-01 1990-07-03 Texas Instruments Incorporated Circuit structure with enhanced electrostatic discharge protection
US5274262A (en) 1989-05-17 1993-12-28 David Sarnoff Research Center, Inc. SCR protection structure and circuit with reduced trigger voltage
US5465189A (en) 1990-03-05 1995-11-07 Texas Instruments Incorporated Low voltage triggering semiconductor controlled rectifiers
US5268588A (en) 1992-09-30 1993-12-07 Texas Instruments Incorporated Semiconductor structure for electrostatic discharge protection
US5343053A (en) 1993-05-21 1994-08-30 David Sarnoff Research Center Inc. SCR electrostatic discharge protection for integrated circuits
US5493133A (en) 1994-06-30 1996-02-20 Texas Instruments Incorporated PNP punchthrough-assisted protection device for special applications in CMOS technologies
JPH09162298A (ja) 1995-12-12 1997-06-20 Fujitsu Ltd 半導体装置
US6172404B1 (en) 1997-10-31 2001-01-09 Texas Instruments Incorporated Tuneable holding voltage SCR ESD protection
TW411607B (en) 1998-12-02 2000-11-11 Winbond Electronics Corp Electrostatic discharge protection circuit
US5962876A (en) 1998-04-06 1999-10-05 Winbond Electronics Corporation Low voltage triggering electrostatic discharge protection circuit
TW393755B (en) 1998-09-02 2000-06-11 Winbond Electronics Corp The electrostatic protecting structure of semiconductor
US6268639B1 (en) * 1999-02-11 2001-07-31 Xilinx, Inc. Electrostatic-discharge protection circuit
DE69941977D1 (de) 1999-06-01 2010-03-18 Imec ESD-Schutz-Bauteil für mittlere Triggerspannung
US6420221B1 (en) * 2000-02-22 2002-07-16 Taiwan Semiconductor Manufacturing Company Method of manufacturing a highly latchup-immune CMOS I/O structure
US6538266B2 (en) * 2000-08-11 2003-03-25 Samsung Electronics Co., Ltd. Protection device with a silicon-controlled rectifier
US6433368B1 (en) 2001-01-22 2002-08-13 National Semiconductor Corporation LVTSCR with a holding voltage that is greater than a DC bias voltage on a to-be-protected node
JP4005920B2 (ja) 2001-03-16 2007-11-14 サーノフ コーポレーション ラッチアップ耐性のための高保持電流を有する静電放電保護構造
US6441439B1 (en) 2001-05-30 2002-08-27 Winbond Electronic Corp. Low-voltage triggering pseudo bipolar ESD protection device for positive/negative signal input pads
US6822294B1 (en) 2001-06-29 2004-11-23 National Semiconductor Corporation High holding voltage LVTSCR
US20040100745A1 (en) 2002-11-21 2004-05-27 Industrial Technology Research Institute Silicon-controlled rectifier with dynamic holding voltage for on-chip electrostatic discharge protection
JP3851893B2 (ja) 2003-08-27 2006-11-29 株式会社東芝 半導体集積回路装置
US7285828B2 (en) * 2005-01-12 2007-10-23 Intersail Americas Inc. Electrostatic discharge protection device for digital circuits and for applications with input/output bipolar voltage much higher than the core circuit power supply
CN101558498A (zh) 2005-03-30 2009-10-14 沙诺夫欧洲公司 静电放电保护电路
US7825473B2 (en) * 2005-07-21 2010-11-02 Industrial Technology Research Institute Initial-on SCR device for on-chip ESD protection
JP5265951B2 (ja) 2008-03-27 2013-08-14 ルネサスエレクトロニクス株式会社 保護回路
US8247839B2 (en) 2008-07-09 2012-08-21 Sofics Bvba ESD protection device with increased holding voltage during normal operation

Also Published As

Publication number Publication date
US8653557B2 (en) 2014-02-18
EP2539934B1 (en) 2020-12-16
WO2011101484A2 (en) 2011-08-25
WO2011101484A3 (en) 2011-11-24
JP2013520789A (ja) 2013-06-06
CN102884624B (zh) 2015-08-26
EP2539934A2 (en) 2013-01-02
CN102884624A (zh) 2013-01-16
US20110204415A1 (en) 2011-08-25
TW201145488A (en) 2011-12-16

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