JP2015510265A5 - - Google Patents

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Publication number
JP2015510265A5
JP2015510265A5 JP2014555258A JP2014555258A JP2015510265A5 JP 2015510265 A5 JP2015510265 A5 JP 2015510265A5 JP 2014555258 A JP2014555258 A JP 2014555258A JP 2014555258 A JP2014555258 A JP 2014555258A JP 2015510265 A5 JP2015510265 A5 JP 2015510265A5
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Japan
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doped region
region
lightly doped
type
lightly
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JP2014555258A
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English (en)
Japanese (ja)
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JP2015510265A (ja
JP6187984B2 (ja
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Priority claimed from PCT/EP2013/052330 external-priority patent/WO2013117592A1/en
Publication of JP2015510265A publication Critical patent/JP2015510265A/ja
Publication of JP2015510265A5 publication Critical patent/JP2015510265A5/ja
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JP2014555258A 2012-02-07 2013-02-06 交互伝導タイプの領域を有する静電放電保護用の半導体デバイス Active JP6187984B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261595893P 2012-02-07 2012-02-07
US61/595,893 2012-02-07
PCT/EP2013/052330 WO2013117592A1 (en) 2012-02-07 2013-02-06 Semiconductor device for electrostatic discharge protection having regions of alternating conductivity types

Publications (3)

Publication Number Publication Date
JP2015510265A JP2015510265A (ja) 2015-04-02
JP2015510265A5 true JP2015510265A5 (enExample) 2016-03-31
JP6187984B2 JP6187984B2 (ja) 2017-08-30

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ID=47666142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014555258A Active JP6187984B2 (ja) 2012-02-07 2013-02-06 交互伝導タイプの領域を有する静電放電保護用の半導体デバイス

Country Status (5)

Country Link
US (3) US9349716B2 (enExample)
EP (1) EP2812922B1 (enExample)
JP (1) JP6187984B2 (enExample)
CN (1) CN104205345B (enExample)
WO (1) WO2013117592A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8872223B2 (en) 2012-02-08 2014-10-28 Robert Newton Rountree Programmable SCR for ESD protection
US9431356B2 (en) * 2013-02-08 2016-08-30 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming the same
US9685431B2 (en) * 2013-09-27 2017-06-20 Sofics Bvba Semiconductor device for electrostatic discharge protection
WO2015075495A1 (en) * 2013-11-22 2015-05-28 Freescale Semiconductor, Inc. Electrostatic discharge protection circuits and structures and methods of manufacture
US10192863B2 (en) * 2014-03-21 2019-01-29 Texas Instruments Incorporated Series connected ESD protection circuit
CN105845729B (zh) 2015-01-15 2019-04-09 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法和电子装置
EP3067930B1 (en) 2015-03-09 2021-08-11 Nexperia B.V. Data transmission system
US10573637B2 (en) * 2016-11-21 2020-02-25 Nexperia B.V. Carrier bypass for electrostatic discharge
CN208045498U (zh) * 2017-03-29 2018-11-02 意法半导体国际有限公司 用于提供静电放电(esd)保护的电路
US10211198B2 (en) * 2017-05-05 2019-02-19 Macronix International Co., Ltd. High voltage electrostatic discharge (ESD) protection
CN108109959B (zh) * 2017-12-15 2021-07-27 西安科锐盛创新科技有限公司 基于bjt的集成电路抗静电转接板及其制备方法
CN108109960B (zh) * 2017-12-15 2021-01-15 浙江清华柔性电子技术研究院 用于系统级封装的硅通孔转接板及其制备方法
CN108091623B (zh) * 2017-12-15 2021-01-15 浙江清华柔性电子技术研究院 基于bjt的系统级封装抗静电转接板
CN108063115B (zh) * 2017-12-15 2021-01-15 浙江清华柔性电子技术研究院 用于系统级封装的tsv转接板及其制备方法
CN108109958B (zh) * 2017-12-15 2020-12-22 浙江清华柔性电子技术研究院 基于三极管的tsv转接板及其制备方法
US10573635B2 (en) 2018-07-23 2020-02-25 Amazing Microelectronics Corp. Transient voltage suppression device with improved electrostatic discharge (ESD) robustness
US10930637B2 (en) 2018-09-06 2021-02-23 Amazing Microelectronic Corp. Transient voltage suppressor
KR20220073008A (ko) 2020-11-26 2022-06-03 삼성전자주식회사 정전기 방전 특성의 대칭적 모델링을 위한 전계 효과 트랜지스터의 모델링 회로 및 이를 이용한 집적 회로의 설계 방법
US11611211B2 (en) * 2021-04-19 2023-03-21 Analog Devices, Inc. Multiple trigger electrostatic discharge (ESD) protection device for integrated circuits with multiple power supply domains
US12471383B2 (en) 2023-01-18 2025-11-11 Amazing Microelectronic Corp. Transient voltage suppression device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960015347B1 (ko) * 1990-09-10 1996-11-09 후지쓰 가부시끼가이샤 반도체장치
US6078083A (en) * 1994-05-16 2000-06-20 Texas Instruments Incorporated ESD protection circuit for dual 3V/5V supply devices using single thickness gate oxides
JPH09162298A (ja) * 1995-12-12 1997-06-20 Fujitsu Ltd 半導体装置
US6236087B1 (en) 1998-11-02 2001-05-22 Analog Devices, Inc. SCR cell for electrical overstress protection of electronic circuits
US6353520B1 (en) * 1999-06-03 2002-03-05 Texas Instruments Incorporated Shared 5 volt tolerant ESD protection circuit for low voltage CMOS process
US7285828B2 (en) * 2005-01-12 2007-10-23 Intersail Americas Inc. Electrostatic discharge protection device for digital circuits and for applications with input/output bipolar voltage much higher than the core circuit power supply
US7825473B2 (en) * 2005-07-21 2010-11-02 Industrial Technology Research Institute Initial-on SCR device for on-chip ESD protection
JP2007189048A (ja) * 2006-01-13 2007-07-26 Matsushita Electric Ind Co Ltd 半導体装置
US7940499B2 (en) 2006-09-15 2011-05-10 Semiconductor Components Industries, Llc Multi-pad shared current dissipation with heterogenic current protection structures
US7456441B2 (en) * 2006-09-15 2008-11-25 Semiconductor Components Industries, Llc Single well excess current dissipation circuit
JP5047653B2 (ja) 2007-03-13 2012-10-10 三菱電機株式会社 半導体装置
US20110068366A1 (en) 2009-09-22 2011-03-24 Richtek Technology Corporation Bi-directional SCR ESD device
US8653557B2 (en) * 2010-02-22 2014-02-18 Sofics Bvba High holding voltage electrostatic discharge (ESD) device
US8441031B2 (en) 2011-01-28 2013-05-14 Nxp B.V. ESD protection device
US9685431B2 (en) * 2013-09-27 2017-06-20 Sofics Bvba Semiconductor device for electrostatic discharge protection

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