CN104205345B - 具有交替导电类型的区域的用于静电放电保护的半导体装置 - Google Patents

具有交替导电类型的区域的用于静电放电保护的半导体装置 Download PDF

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Publication number
CN104205345B
CN104205345B CN201380018873.9A CN201380018873A CN104205345B CN 104205345 B CN104205345 B CN 104205345B CN 201380018873 A CN201380018873 A CN 201380018873A CN 104205345 B CN104205345 B CN 104205345B
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doped region
region
low
doped
protection device
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Chinese (zh)
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CN104205345A (zh
Inventor
B·索尔格洛斯
B·范坎普
S·范韦梅尔斯
W·梵郝特格姆
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Sophie Ces Co ltd
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Sophie Ces Co ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • H10D89/713—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base region coupled to the collector region of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/125—Shapes of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
CN201380018873.9A 2012-02-07 2013-02-06 具有交替导电类型的区域的用于静电放电保护的半导体装置 Active CN104205345B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261595893P 2012-02-07 2012-02-07
US61/595,893 2012-02-07
PCT/EP2013/052330 WO2013117592A1 (en) 2012-02-07 2013-02-06 Semiconductor device for electrostatic discharge protection having regions of alternating conductivity types

Publications (2)

Publication Number Publication Date
CN104205345A CN104205345A (zh) 2014-12-10
CN104205345B true CN104205345B (zh) 2018-02-13

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CN201380018873.9A Active CN104205345B (zh) 2012-02-07 2013-02-06 具有交替导电类型的区域的用于静电放电保护的半导体装置

Country Status (5)

Country Link
US (3) US9349716B2 (enExample)
EP (1) EP2812922B1 (enExample)
JP (1) JP6187984B2 (enExample)
CN (1) CN104205345B (enExample)
WO (1) WO2013117592A1 (enExample)

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US8872223B2 (en) 2012-02-08 2014-10-28 Robert Newton Rountree Programmable SCR for ESD protection
US9431356B2 (en) * 2013-02-08 2016-08-30 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming the same
US9685431B2 (en) * 2013-09-27 2017-06-20 Sofics Bvba Semiconductor device for electrostatic discharge protection
WO2015075495A1 (en) * 2013-11-22 2015-05-28 Freescale Semiconductor, Inc. Electrostatic discharge protection circuits and structures and methods of manufacture
US10192863B2 (en) * 2014-03-21 2019-01-29 Texas Instruments Incorporated Series connected ESD protection circuit
CN105845729B (zh) 2015-01-15 2019-04-09 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法和电子装置
EP3067930B1 (en) * 2015-03-09 2021-08-11 Nexperia B.V. Data transmission system
US10573637B2 (en) * 2016-11-21 2020-02-25 Nexperia B.V. Carrier bypass for electrostatic discharge
CN108695313B (zh) * 2017-03-29 2023-03-21 意法半导体国际有限公司 使用遂穿场效应晶体管和碰撞电离mosfet器件的静电放电保护电路
US10211198B2 (en) * 2017-05-05 2019-02-19 Macronix International Co., Ltd. High voltage electrostatic discharge (ESD) protection
CN108109960B (zh) * 2017-12-15 2021-01-15 浙江清华柔性电子技术研究院 用于系统级封装的硅通孔转接板及其制备方法
CN108063115B (zh) * 2017-12-15 2021-01-15 浙江清华柔性电子技术研究院 用于系统级封装的tsv转接板及其制备方法
CN108091623B (zh) * 2017-12-15 2021-01-15 浙江清华柔性电子技术研究院 基于bjt的系统级封装抗静电转接板
CN108109959B (zh) * 2017-12-15 2021-07-27 西安科锐盛创新科技有限公司 基于bjt的集成电路抗静电转接板及其制备方法
CN108109958B (zh) * 2017-12-15 2020-12-22 浙江清华柔性电子技术研究院 基于三极管的tsv转接板及其制备方法
US10573635B2 (en) 2018-07-23 2020-02-25 Amazing Microelectronics Corp. Transient voltage suppression device with improved electrostatic discharge (ESD) robustness
US10930637B2 (en) 2018-09-06 2021-02-23 Amazing Microelectronic Corp. Transient voltage suppressor
KR20220073008A (ko) 2020-11-26 2022-06-03 삼성전자주식회사 정전기 방전 특성의 대칭적 모델링을 위한 전계 효과 트랜지스터의 모델링 회로 및 이를 이용한 집적 회로의 설계 방법
US11611211B2 (en) 2021-04-19 2023-03-21 Analog Devices, Inc. Multiple trigger electrostatic discharge (ESD) protection device for integrated circuits with multiple power supply domains
US12471383B2 (en) 2023-01-18 2025-11-11 Amazing Microelectronic Corp. Transient voltage suppression device

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US20060151836A1 (en) * 2005-01-12 2006-07-13 Intersil Americas Inc. Electrostatic discharge protection device for digital circuits and for applications with input/output bipolar voltage much higher than the core circuit power supply
US20070018193A1 (en) * 2005-07-21 2007-01-25 Industrial Technology Research Institute Initial-on SCR device for on-chip ESD protection
US20110204415A1 (en) * 2010-02-22 2011-08-25 Sofics Bvba High holding voltage device

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KR960015347B1 (ko) * 1990-09-10 1996-11-09 후지쓰 가부시끼가이샤 반도체장치
US6078083A (en) * 1994-05-16 2000-06-20 Texas Instruments Incorporated ESD protection circuit for dual 3V/5V supply devices using single thickness gate oxides
JPH09162298A (ja) * 1995-12-12 1997-06-20 Fujitsu Ltd 半導体装置
US6236087B1 (en) * 1998-11-02 2001-05-22 Analog Devices, Inc. SCR cell for electrical overstress protection of electronic circuits
US6353520B1 (en) * 1999-06-03 2002-03-05 Texas Instruments Incorporated Shared 5 volt tolerant ESD protection circuit for low voltage CMOS process
JP2007189048A (ja) * 2006-01-13 2007-07-26 Matsushita Electric Ind Co Ltd 半導体装置
US7940499B2 (en) * 2006-09-15 2011-05-10 Semiconductor Components Industries, Llc Multi-pad shared current dissipation with heterogenic current protection structures
US7456441B2 (en) * 2006-09-15 2008-11-25 Semiconductor Components Industries, Llc Single well excess current dissipation circuit
JP5047653B2 (ja) * 2007-03-13 2012-10-10 三菱電機株式会社 半導体装置
US20110068366A1 (en) * 2009-09-22 2011-03-24 Richtek Technology Corporation Bi-directional SCR ESD device
US8441031B2 (en) 2011-01-28 2013-05-14 Nxp B.V. ESD protection device
US9685431B2 (en) * 2013-09-27 2017-06-20 Sofics Bvba Semiconductor device for electrostatic discharge protection

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
US20060151836A1 (en) * 2005-01-12 2006-07-13 Intersil Americas Inc. Electrostatic discharge protection device for digital circuits and for applications with input/output bipolar voltage much higher than the core circuit power supply
US20070018193A1 (en) * 2005-07-21 2007-01-25 Industrial Technology Research Institute Initial-on SCR device for on-chip ESD protection
US20110204415A1 (en) * 2010-02-22 2011-08-25 Sofics Bvba High holding voltage device

Also Published As

Publication number Publication date
US20170243864A1 (en) 2017-08-24
JP6187984B2 (ja) 2017-08-30
US9653453B2 (en) 2017-05-16
US9349716B2 (en) 2016-05-24
EP2812922B1 (en) 2023-12-20
US20160268250A1 (en) 2016-09-15
CN104205345A (zh) 2014-12-10
US20130200493A1 (en) 2013-08-08
EP2812922A1 (en) 2014-12-17
WO2013117592A1 (en) 2013-08-15
JP2015510265A (ja) 2015-04-02
US9881914B2 (en) 2018-01-30

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