JP5529436B2 - 静電破壊保護回路 - Google Patents
静電破壊保護回路 Download PDFInfo
- Publication number
- JP5529436B2 JP5529436B2 JP2009108951A JP2009108951A JP5529436B2 JP 5529436 B2 JP5529436 B2 JP 5529436B2 JP 2009108951 A JP2009108951 A JP 2009108951A JP 2009108951 A JP2009108951 A JP 2009108951A JP 5529436 B2 JP5529436 B2 JP 5529436B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor region
- base
- electrode
- electrostatic breakdown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 claims description 80
- 230000015556 catabolic process Effects 0.000 claims description 75
- 238000009792 diffusion process Methods 0.000 claims description 75
- 239000012535 impurity Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 7
- 238000002955 isolation Methods 0.000 description 15
- 230000007423 decrease Effects 0.000 description 7
- 230000006798 recombination Effects 0.000 description 6
- 238000005215 recombination Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000006378 damage Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
Images
Landscapes
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Description
Claims (3)
- 静電破壊保護用バイポーラトランジスタからなる静電破壊保護回路において、
半導体基板上に形成された前記静電破壊保護用バイポーラトランジスタのコレクタの一部を構成する一導電型の第1半導体領域と、
該第1半導体領域及び前記半導体基板上面に接してエピタキシャル成長によって形成され、前記第1半導体領域より不純物濃度が低い一導電型の第2半導体領域と、
前記第1の半導体領域に接続し、前記第2半導体領域表面に引き出される前記コレクタの一部を構成する一導電型の第3半導体領域と、
前記第2半導体領域内の上部に拡散によって形成され、前記静電破壊保護用バイポーラトランジスタのベースを構成する逆導電型の第4半導体領域と、
前記第4半導体領域内の上部に拡散によって形成され、前記静電破壊保護用バイポーラトランジスタのエミッタを構成する一導電型の第5半導体領域と、
前記第4の半導体領域内の上部に拡散によって形成され、かつ第4半導体領域より不純物濃度が高い逆導電型の第6半導体領域と、
前記第5の半導体領域とコレクタ領域との間の前記第4の半導体領域内の上部に拡散によって形成され、かつ前記第4半導体領域より不純物濃度が高い逆導電型の第7半導体領域と、
前記第5半導体領域に接続するエミッタ電極と、前記第6半導体領域に接続し、かつ前記エミッタ電極と金属電極を介して短絡される第1ベース電極と、前記第3半導体領域に接続するコレクタ電極と、を備えていることを特徴とする静電破壊保護回路。 - 請求項1記載の静電破壊保護回路において、
前記第7半導体領域とコレクタ領域との間の前記第4の半導体領域上に形成され、かつ該第4半導体領域より不純物濃度が高い逆導電型の第8半導体領域と、
該第8半導体領域に接続する第2ベース電極とを備え、
前記エミッタ電極と前記第1ベース電極をともに接地電位あるいは最低電位の端子に接続し、前記コレクタ電極を被保護端子に接続するとともに、トリガー素子のカソードを前記コレクタ電極に、アノードを前記第2ベース電極に、それぞれ接続したことを特徴とする静電破壊保護回路。 - 請求項1又は2いずれか記載の静電破壊保護回路において、前記エミッタ電極と前記第1ベース電極を抵抗を介して接続したことを特徴とする静電破壊保護回路。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009108951A JP5529436B2 (ja) | 2009-04-28 | 2009-04-28 | 静電破壊保護回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009108951A JP5529436B2 (ja) | 2009-04-28 | 2009-04-28 | 静電破壊保護回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010258337A JP2010258337A (ja) | 2010-11-11 |
JP5529436B2 true JP5529436B2 (ja) | 2014-06-25 |
Family
ID=43318884
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009108951A Active JP5529436B2 (ja) | 2009-04-28 | 2009-04-28 | 静電破壊保護回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5529436B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5544119B2 (ja) * | 2009-07-07 | 2014-07-09 | ルネサスエレクトロニクス株式会社 | Esd保護素子 |
JP6169908B2 (ja) * | 2013-07-03 | 2017-07-26 | 新日本無線株式会社 | 静電破壊保護回路 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61204969A (ja) * | 1985-03-08 | 1986-09-11 | Nec Corp | 半導体装置 |
IT1217298B (it) * | 1985-05-30 | 1990-03-22 | Sgs Thomson Microelectronics | Dispositivo di protezione da scariche elettrostatiche,in particolare per circuiti integrati bipolari |
IT1253682B (it) * | 1991-09-12 | 1995-08-22 | Sgs Thomson Microelectronics | Struttura di protezione dalle scariche elettrostatiche |
EP0730300B1 (en) * | 1995-02-28 | 2002-01-02 | STMicroelectronics S.r.l. | Device for the protection of an integrated circuit against electrostatic discharges |
JPH11307539A (ja) * | 1998-04-20 | 1999-11-05 | Fuji Electric Co Ltd | 半導体保護素子 |
JP2000216277A (ja) * | 1999-01-20 | 2000-08-04 | Nec Corp | 半導体装置及びその製造方法 |
-
2009
- 2009-04-28 JP JP2009108951A patent/JP5529436B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2010258337A (ja) | 2010-11-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101394913B1 (ko) | 트렌치 소자분리를 사용한 래치업 없는 버티컬 tvs 다이오드 어레이 구조 | |
US20220165725A1 (en) | High Voltage ESD Protection Apparatus | |
US8466489B2 (en) | Apparatus and method for transient electrical overstress protection | |
US8637899B2 (en) | Method and apparatus for protection and high voltage isolation of low voltage communication interface terminals | |
US9997510B2 (en) | Semiconductor device layout structure | |
JP4209432B2 (ja) | 静電破壊保護装置 | |
US20160079750A1 (en) | Esd protection circuit with plural avalanche diodes | |
TW200818652A (en) | Circuit configurations to reduce snapback of a transient voltage suppressor | |
JP4209433B2 (ja) | 静電破壊保護装置 | |
US8390070B2 (en) | Electrostatic discharge protection device and electrostatic discharge protection circuit thereof | |
US20060086983A1 (en) | Electrostatic protective element of semiconductor integrated circuit | |
US8933513B2 (en) | Semiconductor device | |
JP5529436B2 (ja) | 静電破壊保護回路 | |
US10325905B2 (en) | Semiconductor device and semiconductor circuit device | |
JP5529414B2 (ja) | 静電破壊保護回路 | |
CN108565260B (zh) | 一种半导体器件 | |
CN102412237A (zh) | 用于高电压静电放电防护的低电压结构的防护装置 | |
JP4423466B2 (ja) | 半導体装置 | |
CN112447703A (zh) | 静电放电防护元件 | |
JP7257982B2 (ja) | 半導体装置 | |
JP5708660B2 (ja) | 半導体装置 | |
US7656009B2 (en) | Robust ESD cell | |
JP6169908B2 (ja) | 静電破壊保護回路 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120326 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20131203 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131220 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140408 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140417 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5529436 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |