JP7257982B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7257982B2 JP7257982B2 JP2020046038A JP2020046038A JP7257982B2 JP 7257982 B2 JP7257982 B2 JP 7257982B2 JP 2020046038 A JP2020046038 A JP 2020046038A JP 2020046038 A JP2020046038 A JP 2020046038A JP 7257982 B2 JP7257982 B2 JP 7257982B2
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- 239000004065 semiconductor Substances 0.000 title claims description 350
- 239000012535 impurity Substances 0.000 claims description 40
- 230000015556 catabolic process Effects 0.000 description 11
- 230000002441 reversible effect Effects 0.000 description 9
- 230000003071 parasitic effect Effects 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000012141 concentrate Substances 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0296—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices involving a specific disposition of the protective devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Description
Claims (5)
- 第1導電型の第1半導体部と、
前記第1半導体部上に設けられ、前記第1半導体部に接する第2導電型の第2半導体部と、
前記第1半導体部上に設けられ、前記第2半導体部よりも第2導電型の不純物濃度が低い第2導電型の第3半導体部と、
前記第3半導体部上に設けられ、前記第3半導体部に接する第1導電型の第4半導体部と、
前記第1半導体部上に設けられた第1導電型の第5半導体部と、
前記第5半導体部上に設けられ、前記第5半導体部に接する第2導電型の第6半導体部と、
前記第6半導体部上に設けられ、前記第6半導体部よりも第2導電型の不純物濃度が高い第2導電型の第7半導体部と、
前記第1半導体部と前記第4半導体部とを最短距離で結ぶ方向において前記第1半導体部と前記第3半導体部との間に設けられ、前記第1半導体部に接し、前記第2半導体部よりも第2導電型の不純物濃度が低い第2導電型の第8半導体部と、
前記第2半導体部上に設けられ、前記第3半導体部の周囲および前記第4半導体部の周囲を囲み、前記第3半導体部よりも第2導電型の不純物濃度が高い第2導電型の第9半導体部と、
前記第5半導体部上に設けられ、前記第6半導体部の周囲および前記第7半導体部の周囲を囲む第1導電型の第10半導体部と、
前記第1半導体部に接する第1電極と、
前記第4半導体部および前記第7半導体部に接する第2電極と、
を備える半導体装置。 - 前記第8半導体部の第2導電型の不純物濃度は、前記第3半導体部の第2導電型の不純物濃度よりも高い請求項1記載の半導体装置。
- 前記第8半導体部の周囲は、前記第2半導体部に囲まれている請求項1または2に記載の半導体装置。
- 前記第8半導体部と前記第1半導体部とが接する面積は、前記第2半導体部と前記第1半導体部とが接する面積よりも小さい請求項1~3のいずれか1つに記載の半導体装置。
- 第1導電型の第1半導体部と、
前記第1半導体部上に設けられ、前記第1半導体部に接する第2導電型の第2半導体部と、
前記第1半導体部上に設けられ、前記第2半導体部よりも第2導電型の不純物濃度が低い第2導電型の第3半導体部と、
前記第3半導体部上に設けられ、前記第3半導体部に接する第1導電型の第4半導体部と、
前記第1半導体部上に設けられた第1導電型の第5半導体部と、
前記第5半導体部上に設けられ、前記第5半導体部に接する第2導電型の第6半導体部と、
前記第6半導体部上に設けられ、前記第6半導体部よりも第2導電型の不純物濃度が高い第2導電型の第7半導体部と、
前記第2半導体部上に設けられ、前記第3半導体部の周囲および前記第4半導体部の周囲を囲み、前記第3半導体部よりも第2導電型の不純物濃度が高い第2導電型の第9半導体部と、
前記第5半導体部上に設けられ、前記第6半導体部の周囲および前記第7半導体部の周囲を囲む第1導電型の第10半導体部と、
前記第1半導体部に接する第1電極と、
前記第4半導体部および前記第7半導体部に接する第2電極と、
を備え、
前記第1半導体部は、前記第4半導体部の下で前記第2半導体部に接する第1部分と、前記第1部分に隣接する領域で前記第2半導体部に接する第2部分とを有し、
前記第1部分の第1導電型の不純物濃度は、前記第2部分の第1導電型の不純物濃度よりも低い半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020046038A JP7257982B2 (ja) | 2020-03-17 | 2020-03-17 | 半導体装置 |
US16/936,115 US11594530B2 (en) | 2020-03-17 | 2020-07-22 | Semiconductor device |
CN202010893564.8A CN113410224B (zh) | 2020-03-17 | 2020-08-31 | 半导体装置 |
Applications Claiming Priority (1)
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---|---|---|---|
JP2020046038A JP7257982B2 (ja) | 2020-03-17 | 2020-03-17 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2021150355A JP2021150355A (ja) | 2021-09-27 |
JP7257982B2 true JP7257982B2 (ja) | 2023-04-14 |
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JP2020046038A Active JP7257982B2 (ja) | 2020-03-17 | 2020-03-17 | 半導体装置 |
Country Status (3)
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US (1) | US11594530B2 (ja) |
JP (1) | JP7257982B2 (ja) |
CN (1) | CN113410224B (ja) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001518714A (ja) | 1997-09-30 | 2001-10-16 | インフィネオン テクノロジース アクチエンゲゼルシャフト | 静電放電に対して保護するための保護構造体を備えた集積半導体回路 |
JP2016072259A (ja) | 2014-09-26 | 2016-05-09 | 株式会社東芝 | 半導体装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4231658B2 (ja) * | 2002-05-17 | 2009-03-04 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
US8431958B2 (en) * | 2006-11-16 | 2013-04-30 | Alpha And Omega Semiconductor Ltd | Optimized configurations to integrate steering diodes in low capacitance transient voltage suppressor (TVS) |
JP5529414B2 (ja) * | 2008-12-29 | 2014-06-25 | 新日本無線株式会社 | 静電破壊保護回路 |
JP5439417B2 (ja) * | 2011-03-10 | 2014-03-12 | 株式会社東芝 | 半導体整流装置 |
JP6139312B2 (ja) * | 2013-07-18 | 2017-05-31 | 株式会社東芝 | 半導体装置 |
JP2015170667A (ja) * | 2014-03-05 | 2015-09-28 | 株式会社東芝 | 半導体装置 |
JP6532848B2 (ja) * | 2016-09-15 | 2019-06-19 | 株式会社東芝 | 半導体装置 |
JP6838504B2 (ja) * | 2017-06-16 | 2021-03-03 | 富士電機株式会社 | 半導体装置および半導体回路装置 |
-
2020
- 2020-03-17 JP JP2020046038A patent/JP7257982B2/ja active Active
- 2020-07-22 US US16/936,115 patent/US11594530B2/en active Active
- 2020-08-31 CN CN202010893564.8A patent/CN113410224B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001518714A (ja) | 1997-09-30 | 2001-10-16 | インフィネオン テクノロジース アクチエンゲゼルシャフト | 静電放電に対して保護するための保護構造体を備えた集積半導体回路 |
JP2016072259A (ja) | 2014-09-26 | 2016-05-09 | 株式会社東芝 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
US11594530B2 (en) | 2023-02-28 |
CN113410224A (zh) | 2021-09-17 |
US20210296305A1 (en) | 2021-09-23 |
JP2021150355A (ja) | 2021-09-27 |
CN113410224B (zh) | 2024-04-09 |
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