DE102012218765B4 - Halbleitervorrichtung mit innerhalb desselben Halbleitersubstrats ausgebildetem Leistungselement und Schaltungselement - Google Patents

Halbleitervorrichtung mit innerhalb desselben Halbleitersubstrats ausgebildetem Leistungselement und Schaltungselement Download PDF

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Publication number
DE102012218765B4
DE102012218765B4 DE102012218765.0A DE102012218765A DE102012218765B4 DE 102012218765 B4 DE102012218765 B4 DE 102012218765B4 DE 102012218765 A DE102012218765 A DE 102012218765A DE 102012218765 B4 DE102012218765 B4 DE 102012218765B4
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Prior art keywords
semiconductor layer
semiconductor
semiconductor substrate
semiconductor device
power
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DE102012218765.0A
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German (de)
English (en)
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DE102012218765A1 (de
Inventor
Koji Yamamoto
Atsunobu Kawamoto
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
DE102012218765.0A 2011-10-26 2012-10-15 Halbleitervorrichtung mit innerhalb desselben Halbleitersubstrats ausgebildetem Leistungselement und Schaltungselement Active DE102012218765B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-234814 2011-10-26
JP2011234814A JP5618963B2 (ja) 2011-10-26 2011-10-26 半導体装置

Publications (2)

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DE102012218765A1 DE102012218765A1 (de) 2013-05-02
DE102012218765B4 true DE102012218765B4 (de) 2019-02-07

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DE102012218765.0A Active DE102012218765B4 (de) 2011-10-26 2012-10-15 Halbleitervorrichtung mit innerhalb desselben Halbleitersubstrats ausgebildetem Leistungselement und Schaltungselement

Country Status (4)

Country Link
US (1) US8536655B2 (enExample)
JP (1) JP5618963B2 (enExample)
CN (1) CN103077946B (enExample)
DE (1) DE102012218765B4 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9391448B2 (en) * 2013-09-17 2016-07-12 The Boeing Company High current event mitigation circuit
EP3151402B1 (en) * 2014-05-30 2022-10-05 Mitsubishi Electric Corporation Power-semiconductor element driving circuit
JP6498787B2 (ja) * 2015-12-28 2019-04-10 ローム株式会社 半導体装置
JP7227117B2 (ja) * 2019-11-08 2023-02-21 株式会社東芝 半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06350032A (ja) 1993-06-08 1994-12-22 Toshiba Corp 半導体装置の配線構体
JP2006156959A (ja) 2004-10-26 2006-06-15 Matsushita Electric Ind Co Ltd 半導体装置
DE102010042583A1 (de) 2009-12-15 2011-06-16 Mitsubishi Electric Corp. Leistungshalbleitervorrichtung für Zündvorrichtung

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4933573A (en) * 1987-09-18 1990-06-12 Fuji Electric Co., Ltd. Semiconductor integrated circuit
US5467050A (en) * 1994-01-04 1995-11-14 Texas Instruments Incorporated Dynamic biasing circuit for semiconductor device
JP3400853B2 (ja) * 1994-04-27 2003-04-28 三菱電機株式会社 半導体装置
JP3532276B2 (ja) * 1995-01-06 2004-05-31 株式会社ルネサステクノロジ 基板バイアス回路
JP4128700B2 (ja) * 1999-09-08 2008-07-30 ローム株式会社 誘導性負荷駆動回路
JP4607291B2 (ja) 2000-06-29 2011-01-05 三菱電機株式会社 半導体装置
JP2005252044A (ja) * 2004-03-05 2005-09-15 Fujitsu Ten Ltd 半導体集積回路の寄生トランジスタ発生防止装置、及び半導体集積回路の寄生トランジスタ発生防止方法
US7173315B2 (en) 2004-10-26 2007-02-06 Matsushita Electric Industrial Co., Ltd. Semiconductor device
JP2006332539A (ja) * 2005-05-30 2006-12-07 Sanken Electric Co Ltd 半導体集積回路装置
JP5011748B2 (ja) * 2006-02-24 2012-08-29 株式会社デンソー 半導体装置
JP2008140824A (ja) * 2006-11-30 2008-06-19 Toshiba Corp 半導体装置
JP2008311300A (ja) * 2007-06-12 2008-12-25 Toyota Motor Corp パワー半導体装置、パワー半導体装置の製造方法、およびモータ駆動装置
JP2010118548A (ja) * 2008-11-13 2010-05-27 Mitsubishi Electric Corp 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06350032A (ja) 1993-06-08 1994-12-22 Toshiba Corp 半導体装置の配線構体
JP2006156959A (ja) 2004-10-26 2006-06-15 Matsushita Electric Ind Co Ltd 半導体装置
DE102010042583A1 (de) 2009-12-15 2011-06-16 Mitsubishi Electric Corp. Leistungshalbleitervorrichtung für Zündvorrichtung

Also Published As

Publication number Publication date
JP2013093448A (ja) 2013-05-16
CN103077946A (zh) 2013-05-01
US8536655B2 (en) 2013-09-17
DE102012218765A1 (de) 2013-05-02
US20130106499A1 (en) 2013-05-02
CN103077946B (zh) 2015-09-16
JP5618963B2 (ja) 2014-11-05

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