CN103077946B - 在同一半导体衬底内形成电力和电路元件的半导体装置 - Google Patents

在同一半导体衬底内形成电力和电路元件的半导体装置 Download PDF

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Publication number
CN103077946B
CN103077946B CN201210416161.XA CN201210416161A CN103077946B CN 103077946 B CN103077946 B CN 103077946B CN 201210416161 A CN201210416161 A CN 201210416161A CN 103077946 B CN103077946 B CN 103077946B
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China
Prior art keywords
semiconductor layer
semiconductor device
semiconductor substrate
semiconductor
transistor
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CN201210416161.XA
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Chinese (zh)
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CN103077946A (zh
Inventor
山本刚司
河本厚信
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN103077946A publication Critical patent/CN103077946A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
CN201210416161.XA 2011-10-26 2012-10-26 在同一半导体衬底内形成电力和电路元件的半导体装置 Active CN103077946B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-234814 2011-10-26
JP2011234814A JP5618963B2 (ja) 2011-10-26 2011-10-26 半導体装置

Publications (2)

Publication Number Publication Date
CN103077946A CN103077946A (zh) 2013-05-01
CN103077946B true CN103077946B (zh) 2015-09-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210416161.XA Active CN103077946B (zh) 2011-10-26 2012-10-26 在同一半导体衬底内形成电力和电路元件的半导体装置

Country Status (4)

Country Link
US (1) US8536655B2 (enExample)
JP (1) JP5618963B2 (enExample)
CN (1) CN103077946B (enExample)
DE (1) DE102012218765B4 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9391448B2 (en) * 2013-09-17 2016-07-12 The Boeing Company High current event mitigation circuit
EP3151402B1 (en) * 2014-05-30 2022-10-05 Mitsubishi Electric Corporation Power-semiconductor element driving circuit
CN108431945B (zh) * 2015-12-28 2022-06-10 罗姆股份有限公司 半导体设备
JP7227117B2 (ja) * 2019-11-08 2023-02-21 株式会社東芝 半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4933573A (en) * 1987-09-18 1990-06-12 Fuji Electric Co., Ltd. Semiconductor integrated circuit
US5726598A (en) * 1994-04-27 1998-03-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having voltage sensing element
CN100472786C (zh) * 2005-05-30 2009-03-25 三垦电气株式会社 半导体集成电路器件

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06350032A (ja) 1993-06-08 1994-12-22 Toshiba Corp 半導体装置の配線構体
US5467050A (en) * 1994-01-04 1995-11-14 Texas Instruments Incorporated Dynamic biasing circuit for semiconductor device
JP3532276B2 (ja) * 1995-01-06 2004-05-31 株式会社ルネサステクノロジ 基板バイアス回路
JP4128700B2 (ja) * 1999-09-08 2008-07-30 ローム株式会社 誘導性負荷駆動回路
JP4607291B2 (ja) 2000-06-29 2011-01-05 三菱電機株式会社 半導体装置
JP2005252044A (ja) * 2004-03-05 2005-09-15 Fujitsu Ten Ltd 半導体集積回路の寄生トランジスタ発生防止装置、及び半導体集積回路の寄生トランジスタ発生防止方法
JP2006156959A (ja) 2004-10-26 2006-06-15 Matsushita Electric Ind Co Ltd 半導体装置
US7173315B2 (en) 2004-10-26 2007-02-06 Matsushita Electric Industrial Co., Ltd. Semiconductor device
JP5011748B2 (ja) * 2006-02-24 2012-08-29 株式会社デンソー 半導体装置
JP2008140824A (ja) * 2006-11-30 2008-06-19 Toshiba Corp 半導体装置
JP2008311300A (ja) * 2007-06-12 2008-12-25 Toyota Motor Corp パワー半導体装置、パワー半導体装置の製造方法、およびモータ駆動装置
JP2010118548A (ja) * 2008-11-13 2010-05-27 Mitsubishi Electric Corp 半導体装置
JP5423377B2 (ja) 2009-12-15 2014-02-19 三菱電機株式会社 イグナイタ用電力半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4933573A (en) * 1987-09-18 1990-06-12 Fuji Electric Co., Ltd. Semiconductor integrated circuit
US5726598A (en) * 1994-04-27 1998-03-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having voltage sensing element
CN100472786C (zh) * 2005-05-30 2009-03-25 三垦电气株式会社 半导体集成电路器件

Also Published As

Publication number Publication date
CN103077946A (zh) 2013-05-01
JP2013093448A (ja) 2013-05-16
DE102012218765B4 (de) 2019-02-07
DE102012218765A1 (de) 2013-05-02
US8536655B2 (en) 2013-09-17
JP5618963B2 (ja) 2014-11-05
US20130106499A1 (en) 2013-05-02

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