JP2011523219A5 - - Google Patents
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- Publication number
- JP2011523219A5 JP2011523219A5 JP2011512826A JP2011512826A JP2011523219A5 JP 2011523219 A5 JP2011523219 A5 JP 2011523219A5 JP 2011512826 A JP2011512826 A JP 2011512826A JP 2011512826 A JP2011512826 A JP 2011512826A JP 2011523219 A5 JP2011523219 A5 JP 2011523219A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- type conductive
- conductive semiconductor
- dopant
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008028345.2 | 2008-06-13 | ||
| DE102008028345A DE102008028345A1 (de) | 2008-06-13 | 2008-06-13 | Halbleiterkörper und Verfahren zur Herstellung eines Halbleiterkörpers |
| PCT/DE2009/000756 WO2009149687A1 (de) | 2008-06-13 | 2009-05-28 | Halbleiterkörper und verfahren zur herstellung eines halbleiterkörpers |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011523219A JP2011523219A (ja) | 2011-08-04 |
| JP2011523219A5 true JP2011523219A5 (enExample) | 2012-03-08 |
| JP5661614B2 JP5661614B2 (ja) | 2015-01-28 |
Family
ID=41131617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011512826A Expired - Fee Related JP5661614B2 (ja) | 2008-06-13 | 2009-05-28 | 半導体ボディおよび半導体ボディの製造方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US8581264B2 (enExample) |
| EP (1) | EP2286469B1 (enExample) |
| JP (1) | JP5661614B2 (enExample) |
| KR (1) | KR101642524B1 (enExample) |
| CN (1) | CN101971372B (enExample) |
| AT (1) | ATE540432T1 (enExample) |
| DE (1) | DE102008028345A1 (enExample) |
| TW (1) | TWI396305B (enExample) |
| WO (1) | WO2009149687A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI466343B (zh) * | 2012-01-06 | 2014-12-21 | 華夏光股份有限公司 | 發光二極體裝置 |
| DE102013104192A1 (de) * | 2013-04-25 | 2014-10-30 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement mit einer Zwischenschicht |
| US10236409B2 (en) | 2016-05-20 | 2019-03-19 | Lumileds Llc | Methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers in light emitting devices |
| KR101931798B1 (ko) * | 2017-09-19 | 2018-12-21 | 주식회사 썬다이오드코리아 | 다중 터널 정션 구조를 가지는 발광 다이오드 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US97269A (en) * | 1869-11-30 | Harrison berdan and john bantly | ||
| US197104A (en) * | 1877-11-13 | Improvement in trusses | ||
| US203407A (en) * | 1878-05-07 | Improvement in piano-forte actions | ||
| US90900A (en) * | 1869-06-01 | Improved wooden shoe | ||
| US58465A (en) * | 1866-10-02 | Improvement in carriage-shackles | ||
| US104399A (en) * | 1870-06-21 | Improvement in cultivators | ||
| US187568A (en) * | 1877-02-20 | Improvement in harness-saddle pads | ||
| JPH10242586A (ja) * | 1997-02-24 | 1998-09-11 | Fuji Electric Co Ltd | Ｉｉｉ 族窒化物半導体装置およびその製造方法 |
| JP3916361B2 (ja) | 2000-02-18 | 2007-05-16 | 独立行政法人科学技術振興機構 | 低抵抗ｐ型単結晶ＺｎＳ薄膜およびその製造方法 |
| US20020157596A1 (en) * | 2001-04-30 | 2002-10-31 | Stockman Stephen A. | Forming low resistivity p-type gallium nitride |
| US6537838B2 (en) | 2001-06-11 | 2003-03-25 | Limileds Lighting, U.S., Llc | Forming semiconductor structures including activated acceptors in buried p-type III-V layers |
| JP4233268B2 (ja) * | 2002-04-23 | 2009-03-04 | シャープ株式会社 | 窒化物系半導体発光素子およびその製造方法 |
| JP2004134750A (ja) * | 2002-09-19 | 2004-04-30 | Toyoda Gosei Co Ltd | ｐ型ＩＩＩ族窒化物系化合物半導体の製造方法 |
| TW561637B (en) * | 2002-10-16 | 2003-11-11 | Epistar Corp | LED having contact layer with dual dopant state |
| KR20050093319A (ko) | 2004-03-18 | 2005-09-23 | 삼성전기주식회사 | 발광효율이 개선된 질화물 반도체 발광소자 및 그 제조방법 |
| US7061026B2 (en) * | 2004-04-16 | 2006-06-13 | Arima Optoelectronics Corp. | High brightness gallium nitride-based light emitting diode with transparent conducting oxide spreading layer |
| US7095052B2 (en) * | 2004-10-22 | 2006-08-22 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Method and structure for improved LED light output |
| US7720124B2 (en) * | 2005-03-03 | 2010-05-18 | Panasonic Corporation | Semiconductor device and fabrication method thereof |
| DE102005035722B9 (de) | 2005-07-29 | 2021-11-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
| TWI277226B (en) * | 2005-10-24 | 2007-03-21 | Formosa Epitaxy Inc | Light emitting diode |
| DE102007019079A1 (de) | 2007-01-26 | 2008-07-31 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
| DE102007018307A1 (de) * | 2007-01-26 | 2008-07-31 | Osram Opto Semiconductors Gmbh | Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips |
| US7759670B2 (en) | 2007-06-12 | 2010-07-20 | SemiLEDs Optoelectronics Co., Ltd. | Vertical LED with current guiding structure |
-
2008
- 2008-06-13 DE DE102008028345A patent/DE102008028345A1/de not_active Withdrawn
-
2009
- 2009-05-28 JP JP2011512826A patent/JP5661614B2/ja not_active Expired - Fee Related
- 2009-05-28 WO PCT/DE2009/000756 patent/WO2009149687A1/de not_active Ceased
- 2009-05-28 US US12/922,864 patent/US8581264B2/en active Active
- 2009-05-28 KR KR1020107020378A patent/KR101642524B1/ko active Active
- 2009-05-28 AT AT09761309T patent/ATE540432T1/de active
- 2009-05-28 EP EP09761309A patent/EP2286469B1/de active Active
- 2009-05-28 CN CN2009801090568A patent/CN101971372B/zh active Active
- 2009-06-11 TW TW098119476A patent/TWI396305B/zh active
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