CN101971372B - 半导体本体和制造半导体本体的方法 - Google Patents

半导体本体和制造半导体本体的方法 Download PDF

Info

Publication number
CN101971372B
CN101971372B CN2009801090568A CN200980109056A CN101971372B CN 101971372 B CN101971372 B CN 101971372B CN 2009801090568 A CN2009801090568 A CN 2009801090568A CN 200980109056 A CN200980109056 A CN 200980109056A CN 101971372 B CN101971372 B CN 101971372B
Authority
CN
China
Prior art keywords
semiconductor layer
type semiconductor
type
impurities
active region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2009801090568A
Other languages
English (en)
Chinese (zh)
Other versions
CN101971372A (zh
Inventor
马丁·斯特拉斯伯格
汉斯-尤尔根·卢高尔
文森特·格罗利尔
贝特侯德·哈恩
理查德·弗洛特尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN101971372A publication Critical patent/CN101971372A/zh
Application granted granted Critical
Publication of CN101971372B publication Critical patent/CN101971372B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures

Landscapes

  • Led Devices (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Light Receiving Elements (AREA)
CN2009801090568A 2008-06-13 2009-05-28 半导体本体和制造半导体本体的方法 Active CN101971372B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008028345.2 2008-06-13
DE102008028345A DE102008028345A1 (de) 2008-06-13 2008-06-13 Halbleiterkörper und Verfahren zur Herstellung eines Halbleiterkörpers
PCT/DE2009/000756 WO2009149687A1 (de) 2008-06-13 2009-05-28 Halbleiterkörper und verfahren zur herstellung eines halbleiterkörpers

Publications (2)

Publication Number Publication Date
CN101971372A CN101971372A (zh) 2011-02-09
CN101971372B true CN101971372B (zh) 2013-05-15

Family

ID=41131617

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801090568A Active CN101971372B (zh) 2008-06-13 2009-05-28 半导体本体和制造半导体本体的方法

Country Status (9)

Country Link
US (1) US8581264B2 (enExample)
EP (1) EP2286469B1 (enExample)
JP (1) JP5661614B2 (enExample)
KR (1) KR101642524B1 (enExample)
CN (1) CN101971372B (enExample)
AT (1) ATE540432T1 (enExample)
DE (1) DE102008028345A1 (enExample)
TW (1) TWI396305B (enExample)
WO (1) WO2009149687A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI466343B (zh) * 2012-01-06 2014-12-21 華夏光股份有限公司 發光二極體裝置
DE102013104192A1 (de) * 2013-04-25 2014-10-30 Osram Opto Semiconductors Gmbh Halbleiterbauelement mit einer Zwischenschicht
US10236409B2 (en) 2016-05-20 2019-03-19 Lumileds Llc Methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers in light emitting devices
KR101931798B1 (ko) * 2017-09-19 2018-12-21 주식회사 썬다이오드코리아 다중 터널 정션 구조를 가지는 발광 다이오드

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7041519B2 (en) * 2002-09-19 2006-05-09 Toyoda Gosei Co., Ltd. Method for producing p-type group III nitride compound semiconductor
JP3916361B2 (ja) * 2000-02-18 2007-05-16 独立行政法人科学技術振興機構 低抵抗ｐ型単結晶ＺｎＳ薄膜およびその製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US97269A (en) * 1869-11-30 Harrison berdan and john bantly
US197104A (en) * 1877-11-13 Improvement in trusses
US203407A (en) * 1878-05-07 Improvement in piano-forte actions
US90900A (en) * 1869-06-01 Improved wooden shoe
US58465A (en) * 1866-10-02 Improvement in carriage-shackles
US104399A (en) * 1870-06-21 Improvement in cultivators
US187568A (en) * 1877-02-20 Improvement in harness-saddle pads
JPH10242586A (ja) * 1997-02-24 1998-09-11 Fuji Electric Co Ltd Ｉｉｉ 族窒化物半導体装置およびその製造方法
US20020157596A1 (en) * 2001-04-30 2002-10-31 Stockman Stephen A. Forming low resistivity p-type gallium nitride
US6537838B2 (en) 2001-06-11 2003-03-25 Limileds Lighting, U.S., Llc Forming semiconductor structures including activated acceptors in buried p-type III-V layers
JP4233268B2 (ja) * 2002-04-23 2009-03-04 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
TW561637B (en) * 2002-10-16 2003-11-11 Epistar Corp LED having contact layer with dual dopant state
KR20050093319A (ko) 2004-03-18 2005-09-23 삼성전기주식회사 발광효율이 개선된 질화물 반도체 발광소자 및 그 제조방법
US7061026B2 (en) * 2004-04-16 2006-06-13 Arima Optoelectronics Corp. High brightness gallium nitride-based light emitting diode with transparent conducting oxide spreading layer
US7095052B2 (en) * 2004-10-22 2006-08-22 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Method and structure for improved LED light output
US7720124B2 (en) * 2005-03-03 2010-05-18 Panasonic Corporation Semiconductor device and fabrication method thereof
DE102005035722B9 (de) 2005-07-29 2021-11-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
TWI277226B (en) * 2005-10-24 2007-03-21 Formosa Epitaxy Inc Light emitting diode
DE102007019079A1 (de) 2007-01-26 2008-07-31 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102007018307A1 (de) * 2007-01-26 2008-07-31 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
US7759670B2 (en) 2007-06-12 2010-07-20 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current guiding structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3916361B2 (ja) * 2000-02-18 2007-05-16 独立行政法人科学技術振興機構 低抵抗ｐ型単結晶ＺｎＳ薄膜およびその製造方法
US7041519B2 (en) * 2002-09-19 2006-05-09 Toyoda Gosei Co., Ltd. Method for producing p-type group III nitride compound semiconductor

Also Published As

Publication number Publication date
US8581264B2 (en) 2013-11-12
DE102008028345A1 (de) 2009-12-17
TW201019508A (en) 2010-05-16
CN101971372A (zh) 2011-02-09
KR20110015510A (ko) 2011-02-16
ATE540432T1 (de) 2012-01-15
EP2286469B1 (de) 2012-01-04
KR101642524B1 (ko) 2016-07-25
EP2286469A1 (de) 2011-02-23
JP5661614B2 (ja) 2015-01-28
JP2011523219A (ja) 2011-08-04
US20110073902A1 (en) 2011-03-31
TWI396305B (zh) 2013-05-11
WO2009149687A1 (de) 2009-12-17

Similar Documents

Publication Publication Date Title
CN101427431B (zh) 具有隧道结的高效发光二极管
TWI323948B (en) Opto-electronic semiconductor chip
US20090173956A1 (en) Contact for a semiconductor light emitting device
KR100910964B1 (ko) 오믹 전극 및 이의 형성 방법
WO2003107443A2 (en) Bonding pad for gallium nitride-based light-emitting device
WO2010033910A1 (en) Thin light-emitting devices and fabrication methods
CN113078243A (zh) 用于使用远程等离子体化学气相沉积和溅射沉积来生长发光器件中的层的方法
KR20150103291A (ko) 고성능 헤테로구조 발광 소자 및 방법
US7002180B2 (en) Bonding pad for gallium nitride-based light-emitting device
Chen et al. Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes
JP2007157853A (ja) 半導体発光素子およびその製造方法
TWI488333B (zh) LED element and manufacturing method thereof
CN101601142B (zh) 半导体芯片和用于制造半导体芯片的方法
CN101971372B (zh) 半导体本体和制造半导体本体的方法
CN101273468A (zh) 具有电流扩展层的光电子半导体器件
JP2008515210A (ja) 薄膜半導体チップの製造方法
CN100550444C (zh) 用于制造薄膜半导体芯片的方法以及薄膜半导体芯片
US20100176373A1 (en) Fabrication method of nitride semiconductor light emitting device and nitride semiconductor light emitting device thereby
Luo et al. Vertical InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with through-holes
TW202429681A (zh) 具有雜質吸除之電子裝置
KR101681573B1 (ko) 발광소자의 제조방법
JP5725069B2 (ja) 窒化物半導体発光素子
JP2009010429A (ja) 窒化ガリウム系化合物半導体発光素子
JP2005094043A (ja) 窒化ガリウム系化合物半導体発光素子
JP2005294876A (ja) 窒化ガリウム系化合物半導体発光素子

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant