JP2011523219A - 半導体ボディおよび半導体ボディの製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000002019 doping agent Substances 0.000 claims abstract description 71
- 239000001257 hydrogen Substances 0.000 claims description 32
- 229910052739 hydrogen Inorganic materials 0.000 claims description 32
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 17
- 230000005855 radiation Effects 0.000 claims description 17
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- -1 nitride compound Chemical class 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
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- 238000003892 spreading Methods 0.000 description 8
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- 229910052749 magnesium Inorganic materials 0.000 description 7
- 239000011777 magnesium Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 239000000370 acceptor Substances 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
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- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005309 stochastic process Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H01L33/26—Materials of the light emitting region
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- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
【選択図】図1
Description
− 活性領域を有する半導体積層体を備えている半導体ボディの(特に、エピタキシャル積層体の)第1の主面(キャリア要素に面している)に、ミラー層が堆積または形成されており(例えば半導体層にブラッグミラーとして組み込まれている)、このミラー層が、半導体積層体において発生する放射の少なくとも一部分を半導体積層体の方に反射する。
− 半導体積層体の厚さは、20μm以下の範囲、特に10μm以下の範囲である。
− 半導体積層体は、少なくとも一面が混合構造(intermixing structure)を備えている少なくとも1層の半導体層を含んでおり、これによって、理想的には半導体積層体における近似的に光のエルゴード分布につながり、すなわち、実質的にエルゴード的確率過程である散乱挙動を示す。
Claims (15)
- 半導体ボディ(2)であって、
− n型導電半導体層(21)と、
− p型導電半導体層(22)と、
を備えており、
− 前記p型導電半導体層(22)がp型ドーパントを含んでおり、
− 前記n型導電半導体層(21)がn型ドーパントおよびさらなるドーパントを含んでおり、
− 前記p型導電半導体層(22)と前記n型導電半導体層(21)との間に、放射の発生を目的とする活性領域(20)、もしくはトンネル接合(23,24)、またはその両方が形成されている、
半導体ボディ(2)。 - 前記p型導電半導体層(22)が少なくとも1層のさらなる半導体層によって覆われている、
請求項1に記載の半導体ボディ。 - 前記p型導電半導体層(22)が、前記活性領域(20)と、キャリア(5)または成長基板(50)との間に配置されている、
請求項1または請求項2に記載の半導体ボディ。 - 以下の積層体、すなわち、
− 前記成長基板(50)と、
− 前記成長基板(50)の上の前記p型導電半導体層(22)と、
− 前記p型導電半導体層(22)の上の前記活性領域(20)と、
− 前記活性領域(20)の上の前記n型導電半導体層(21)と、
を有する、極性が逆の構造、
を備えている、
請求項1から請求項3のいずれかに記載の半導体ボディ。 - 前記さらなるドーパントが、前記n型導電半導体層(21)において、前記n型導電半導体層(21)の水素に対する透過性が増大するように、材料および濃度に関して設定されている、
請求項1から請求項4のいずれかに記載の半導体ボディ。 - 前記n型導電半導体層(21)における前記さらなるドーパントが、アクセプタとしての役割を果たす、
請求項1から請求項5のいずれかに記載の半導体ボディ。 - 前記さらなるドーパントが、前記p型導電半導体層(22)の前記p型ドーパントと同じである、
請求項1から請求項6のいずれかに記載の半導体ボディ。 - 前記n型導電半導体層(21)における前記さらなるドーパントの濃度が、1×1017cm−3〜5×1018cm−3の範囲(両端値を含む)である、
請求項1から請求項7のいずれかに記載の半導体ボディ。 - 前記n型導電半導体層(21)における前記さらなるドーパントの濃度が、前記n型ドーパントの濃度の最大で50%である、
請求項1から請求項8のいずれかに記載の半導体ボディ。 - 前記半導体ボディ(2)が、前記活性領域(20)とさらなる活性領域(25)とを備えており、前記活性領域(20)および前記さらなる活性領域(25)のそれぞれが、放射の発生を目的としており、前記活性領域(20)と前記さらなる活性領域(25)との間に前記n型導電半導体層(21)が設けられている、
請求項1から請求項9のいずれかに記載の半導体ボディ。 - 前記半導体ボディ(2)が窒化物化合物半導体材料をベースとしている、
請求項1から請求項10のいずれかに記載の半導体ボディ。 - 請求項1から請求項9のいずれかに記載の半導体ボディ(2)を有する半導体チップ(1)であって、
発光ダイオードチップとして、またはレーザダイオードチップとして、特に、薄膜半導体チップとして具体化されている、
半導体チップ(1)。 - n型導電半導体層(21)およびp型導電半導体層(22)を有する半導体ボディ(2)、を製造する方法であって、
a)p型ドーパントおよび水素を含んでいる半導体層(220)を堆積させるステップと、
b)n型ドーパントおよびさらなるドーパントを含んでいる前記n型導電半導体層(21)を堆積させるステップと、
c)前記半導体層(220)の前記p型ドーパントを活性化させて前記p型導電半導体層(22)を形成するステップであって、前記半導体層(220)からの水素が前記n型導電半導体層(21)を通り抜ける、前記ステップと、
を含んでいる、方法。 - ステップc)における前記活性化を熱的に行う、
請求項13に記載の方法。 - 請求項1から請求項11のいずれかに記載の半導体ボディ(2)が製造される、
請求項13または請求項14に記載の方法。
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DE102008028345A DE102008028345A1 (de) | 2008-06-13 | 2008-06-13 | Halbleiterkörper und Verfahren zur Herstellung eines Halbleiterkörpers |
PCT/DE2009/000756 WO2009149687A1 (de) | 2008-06-13 | 2009-05-28 | Halbleiterkörper und verfahren zur herstellung eines halbleiterkörpers |
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2008
- 2008-06-13 DE DE102008028345A patent/DE102008028345A1/de not_active Withdrawn
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- 2009-05-28 JP JP2011512826A patent/JP5661614B2/ja active Active
- 2009-05-28 CN CN2009801090568A patent/CN101971372B/zh active Active
- 2009-05-28 US US12/922,864 patent/US8581264B2/en active Active
- 2009-05-28 KR KR1020107020378A patent/KR101642524B1/ko active IP Right Grant
- 2009-05-28 AT AT09761309T patent/ATE540432T1/de active
- 2009-05-28 WO PCT/DE2009/000756 patent/WO2009149687A1/de active Application Filing
- 2009-05-28 EP EP09761309A patent/EP2286469B1/de active Active
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Also Published As
Publication number | Publication date |
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CN101971372A (zh) | 2011-02-09 |
WO2009149687A1 (de) | 2009-12-17 |
EP2286469B1 (de) | 2012-01-04 |
DE102008028345A1 (de) | 2009-12-17 |
EP2286469A1 (de) | 2011-02-23 |
TW201019508A (en) | 2010-05-16 |
ATE540432T1 (de) | 2012-01-15 |
CN101971372B (zh) | 2013-05-15 |
TWI396305B (zh) | 2013-05-11 |
KR20110015510A (ko) | 2011-02-16 |
US20110073902A1 (en) | 2011-03-31 |
JP5661614B2 (ja) | 2015-01-28 |
US8581264B2 (en) | 2013-11-12 |
KR101642524B1 (ko) | 2016-07-25 |
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