TWI396305B - 半導體本體及其製造方法 - Google Patents

半導體本體及其製造方法 Download PDF

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Publication number
TWI396305B
TWI396305B TW098119476A TW98119476A TWI396305B TW I396305 B TWI396305 B TW I396305B TW 098119476 A TW098119476 A TW 098119476A TW 98119476 A TW98119476 A TW 98119476A TW I396305 B TWI396305 B TW I396305B
Authority
TW
Taiwan
Prior art keywords
semiconductor layer
conductive semiconductor
dopant
conductive
active region
Prior art date
Application number
TW098119476A
Other languages
English (en)
Chinese (zh)
Other versions
TW201019508A (en
Inventor
Vincent Grolier
Berthold Hahn
Hans-Juergen Lugauer
Martin Strassburg
Richard Floeter
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW201019508A publication Critical patent/TW201019508A/zh
Application granted granted Critical
Publication of TWI396305B publication Critical patent/TWI396305B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures

Landscapes

  • Led Devices (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Light Receiving Elements (AREA)
TW098119476A 2008-06-13 2009-06-11 半導體本體及其製造方法 TWI396305B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102008028345A DE102008028345A1 (de) 2008-06-13 2008-06-13 Halbleiterkörper und Verfahren zur Herstellung eines Halbleiterkörpers

Publications (2)

Publication Number Publication Date
TW201019508A TW201019508A (en) 2010-05-16
TWI396305B true TWI396305B (zh) 2013-05-11

Family

ID=41131617

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098119476A TWI396305B (zh) 2008-06-13 2009-06-11 半導體本體及其製造方法

Country Status (9)

Country Link
US (1) US8581264B2 (enExample)
EP (1) EP2286469B1 (enExample)
JP (1) JP5661614B2 (enExample)
KR (1) KR101642524B1 (enExample)
CN (1) CN101971372B (enExample)
AT (1) ATE540432T1 (enExample)
DE (1) DE102008028345A1 (enExample)
TW (1) TWI396305B (enExample)
WO (1) WO2009149687A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI466343B (zh) * 2012-01-06 2014-12-21 華夏光股份有限公司 發光二極體裝置
DE102013104192A1 (de) * 2013-04-25 2014-10-30 Osram Opto Semiconductors Gmbh Halbleiterbauelement mit einer Zwischenschicht
US10236409B2 (en) 2016-05-20 2019-03-19 Lumileds Llc Methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers in light emitting devices
KR101931798B1 (ko) * 2017-09-19 2018-12-21 주식회사 썬다이오드코리아 다중 터널 정션 구조를 가지는 발광 다이오드

Citations (6)

* Cited by examiner, † Cited by third party
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US20020187568A1 (en) * 2001-06-11 2002-12-12 Stockman Stephen A. Forming semiconductor structures including acticated acceptors in buried p-type gan layers
TW554550B (en) * 2001-04-30 2003-09-21 Lumileds Lighting Llc Forming low resistivity p-type gallium nitride
US20040058465A1 (en) * 2002-09-19 2004-03-25 Toyoda Gosei Co., Ltd. Method for producing p-type Group III nitride compound semiconductor
US20040104399A1 (en) * 2002-10-16 2004-06-03 Chen Ou Light emitting diode having a dual dopant contact layer
TW200614551A (en) * 2004-10-22 2006-05-01 Agilent Technologies Inc Method and structure for improved led light output
TW200919783A (en) * 2007-06-12 2009-05-01 Semi Photonics Co Ltd Vertical LED with current guiding structure

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US97269A (en) * 1869-11-30 Harrison berdan and john bantly
US197104A (en) * 1877-11-13 Improvement in trusses
US203407A (en) * 1878-05-07 Improvement in piano-forte actions
US90900A (en) * 1869-06-01 Improved wooden shoe
US58465A (en) * 1866-10-02 Improvement in carriage-shackles
US104399A (en) * 1870-06-21 Improvement in cultivators
US187568A (en) * 1877-02-20 Improvement in harness-saddle pads
JPH10242586A (ja) * 1997-02-24 1998-09-11 Fuji Electric Co Ltd Ｉｉｉ 族窒化物半導体装置およびその製造方法
JP3916361B2 (ja) 2000-02-18 2007-05-16 独立行政法人科学技術振興機構 低抵抗ｐ型単結晶ＺｎＳ薄膜およびその製造方法
JP4233268B2 (ja) * 2002-04-23 2009-03-04 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
KR20050093319A (ko) 2004-03-18 2005-09-23 삼성전기주식회사 발광효율이 개선된 질화물 반도체 발광소자 및 그 제조방법
US7061026B2 (en) * 2004-04-16 2006-06-13 Arima Optoelectronics Corp. High brightness gallium nitride-based light emitting diode with transparent conducting oxide spreading layer
US7720124B2 (en) * 2005-03-03 2010-05-18 Panasonic Corporation Semiconductor device and fabrication method thereof
DE102005035722B9 (de) 2005-07-29 2021-11-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
TWI277226B (en) * 2005-10-24 2007-03-21 Formosa Epitaxy Inc Light emitting diode
DE102007019079A1 (de) 2007-01-26 2008-07-31 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102007018307A1 (de) * 2007-01-26 2008-07-31 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW554550B (en) * 2001-04-30 2003-09-21 Lumileds Lighting Llc Forming low resistivity p-type gallium nitride
US20020187568A1 (en) * 2001-06-11 2002-12-12 Stockman Stephen A. Forming semiconductor structures including acticated acceptors in buried p-type gan layers
US20040058465A1 (en) * 2002-09-19 2004-03-25 Toyoda Gosei Co., Ltd. Method for producing p-type Group III nitride compound semiconductor
US20040104399A1 (en) * 2002-10-16 2004-06-03 Chen Ou Light emitting diode having a dual dopant contact layer
TW200614551A (en) * 2004-10-22 2006-05-01 Agilent Technologies Inc Method and structure for improved led light output
TW200919783A (en) * 2007-06-12 2009-05-01 Semi Photonics Co Ltd Vertical LED with current guiding structure

Also Published As

Publication number Publication date
US8581264B2 (en) 2013-11-12
DE102008028345A1 (de) 2009-12-17
TW201019508A (en) 2010-05-16
CN101971372A (zh) 2011-02-09
KR20110015510A (ko) 2011-02-16
ATE540432T1 (de) 2012-01-15
EP2286469B1 (de) 2012-01-04
KR101642524B1 (ko) 2016-07-25
EP2286469A1 (de) 2011-02-23
JP5661614B2 (ja) 2015-01-28
JP2011523219A (ja) 2011-08-04
US20110073902A1 (en) 2011-03-31
WO2009149687A1 (de) 2009-12-17
CN101971372B (zh) 2013-05-15

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