Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/81—Bodies
  • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/81—Bodies
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/81—Bodies
  • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/81—Bodies
  • H10H20/822—Materials of the light-emitting regions
  • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
  • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/81—Bodies
  • H10H20/822—Materials of the light-emitting regions
  • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
  • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
  • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/30—Structure or shape of the active region; Materials used for the active region
  • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/01—Manufacture or treatment
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/81—Bodies
  • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
  • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures

Definitions

• a semiconductor body has an n-conducting semiconductor layer and a p-conducting one Semiconductor layer on.
• the p-type semiconductor layer contains a p-type impurity.
• the n-type semiconductor layer contains an n-type dopant and another dopant.
• the degree of activation of the p-type semiconductor layer is permanently increased. That is, the proportion of the atoms of the p-type impurity providing holes as carriers is increased.
• the n-conducting semiconductor layer has a thickness of at least 5 nm, preferably at least 10 nm, particularly preferably at least 20 nm.
• Such an n-type semiconductor layer without further dopant, ie only with an n-type dopant, is impermeable to hydrogen. Only by the addition of the further dopant is a permeability of the layer for hydrogen achieved.
• the n-type semiconductor layer may in this case be formed thicker than 20 nm, which for example improves the transverse conductivity of the n-type semiconductor layer.
• the semiconductor body is preferably based on a nitride compound semiconductor material.
• the further dopant with respect to the material and / or the concentration is formed in the n-type semiconductor layer such that a permeability of the n-type semiconductor layer for hydrogen is increased.
• hydrogen can pass through the n-type semiconductor layer in an improved manner.
• the degree of activation of the p-type semiconductor layer can thus be increased.
• the solubility of hydrogen in the n-type semiconductor layer may in this case be increased by means of the further dopant.
• the further dopant in the n-type semiconductor layer acts as an acceptor.
• n-doping By acting as an acceptor further dopant n-doping is partially compensated by means of the further dopant. It has been found that, despite the partial compensation of the n-type doping in the n-type semiconductor layer, the acceptor as a further dopant causes an overall improvement in the optoelectronic properties of the semiconductor body due to the increased degree of activation of the p-type dopant in the p-type semiconductor layer.
• the further dopant of the n-type semiconductor layer is equal to the p-type dopant the p-type semiconductor layer.
• the further dopant and the p-type dopant may each be magnesium.
• the concentration of the further dopant is in the n-type semiconductor layer is at least 1 x 10 ⁇ cm "3 In particular, the concentration between 1 x 10 ⁇ 7 cm ⁇ 3 an d including 5 x lO ⁇ cm -. 3, particularly preferably between 1 x 10 17 cm “3 and including 2 x 10 18 cm" 3, respectively.
• the permeability of the n-type semiconductor layer for hydrogen may be increased without a significant deterioration of the optical quality of the n-type semiconductor layer occurs.
• the semiconductor body preferably has an active region provided for generating radiation.
• the active region may in particular be formed between the p-type semiconductor layer and the n-type semiconductor layer.
• the n-type semiconductor layer may be formed between the active region and the further active region.
• the p-type semiconductor layer covered by the n-type semiconductor layer can be activated more effectively in the production of the semiconductor body.
• a growth substrate for the semiconductor body is completely or at least partially removed.
• a semiconductor chip is also referred to as a thin-film semiconductor chip.
• the semiconductor layer sequence contains at least one semiconductor layer having at least one surface having a mixing structure, which leads in the ideal case to an approximately ergodic distribution of light in the semiconductor layer sequence, that is, it has a possible ergodisch stochastisch.es scattering behavior.
• the semiconductor body has a polarization-inverted structure, with the following sequence of layers:
• the semiconductor body comprises a growth substrate on which the p-conducting semiconductor layer is arranged.
• the active region is arranged on the side of the p-type semiconductor layer facing away from the growth substrate.
• the n-type semiconductor layer is arranged with an n-type dopant and a further dopant.
• the p-type semiconductor layer is buried, that is, it is covered by other semiconductor layers.
• hydrogen must therefore pass through the further semiconductor layers, in particular pass through the n-type semiconductor layer in order to be able to leave the semiconductor body.
• a further dopant for example the p-type dopant, which is also used in the p-type semiconductor layer.
• a sequence in which first the p-type semiconductor layer and subsequently the active region and the n-type semiconductor layer are deposited can exploit the polarity of the piezoelectric fields to promote the trapping of carriers in the active region.
• the piezoelectric fields thus contribute in this sequence of the layer structure to an improved capture of charge carriers in the active region.
• the internal quantum efficiency is thereby almost independent of the current density.
• the buried p-type semiconductor layer is doped with magnesium, it can be activated in an improved manner due to the improved hydrogen permeability of the overlying n-type semiconductor layer.
• the method described is particularly suitable for producing a semiconductor body described above.
• executed features can therefore be used for the process and vice versa.
• a first exemplary embodiment of a semiconductor body is shown schematically in a sectional view in FIG.
• the semiconductor body 2 has an n-type semiconductor layer 21 and a p-type semiconductor layer 22. Between the n-type semiconductor layer and the p-type semiconductor layer is formed an active region 20 which is provided for generating radiation.
• This layer sequence exploits the polarity of the piezoelectric fields that form in the semiconductor body 10 in order to support the trapping of charge carriers in the active region 20.
• the piezoelectric fields thus contribute to an improved capture of charge carriers in the active region 20 in this sequence.
• the internal quantum efficiency of multiple quantum wells, for example active region 20 thereby becomes almost independent of the current density.
• the n-type semiconductor layer 21 contains a further dopant.
• magnesium is particularly suitable as a further dopant for the n-type semiconductor layer.
• the further dopant may thus correspond to the p-type dopant of the p-type semiconductor layer.
• the hydrogen incorporated in the semiconductor layer 220 can thus pass through the n-conducting semiconductor layer 21 in a simplified manner and escape from the semiconductor body 2.
• the degree of activation of the p-type semiconductor layer 22 can thus be improved in a simple and reproducible manner.
• the concentration of the further dopant is preferably at most 50%. Excessive compensation of the n-dopant by the other dopant can be avoided.
• the semiconductor body can be embodied such that charge carriers are injected into the active region in a simplified manner and, furthermore, the piezoelectric fields that occur promote the recombination of charge carriers in the active region can. Furthermore, the p-type semiconductor layer can have a high degree of activation, so that a semiconductor chip with such a semiconductor body can have improved optoelectronic properties.
• the semiconductor body 2 is arranged on a carrier 5, which is different from the growth substrate for the semiconductor layer sequence of the semiconductor body 2.
• the semiconductor body 2 is mechanically stable connected to the carrier 5 by means of a connecting layer 6.
• the bonding layer 6 may be, for example, a solder layer or an electrically conductive adhesive layer.
• the semiconductor chip 1 has a first contact 71 and a second contact 72.
• the contacts are provided for external electrical contacting of the semiconductor chip 1 and arranged such that charge carriers can be injected from different sides into the active region 20 during operation of the semiconductor chip and recombine there with the emission of radiation.
• the current spreading layer can be, for example, a TCO (transparent conductive oxide),
• the carrier 5 is preferably designed to be electrically conductive.
• the carrier 5 may contain a semiconductor material, such as germanium, gallium arsenide or silicon or consist of such a material. Deviating from the carrier 5 may also contain a ceramic, such as aluminum nitride or boron nitride, or consist of such a material.
• FIG. 1 A second exemplary embodiment of a semiconductor body is shown schematically in a sectional view in FIG. This second embodiment substantially corresponds to the first embodiment described in connection with FIG.
• the semiconductor body 2 has a further active region 25, a further n-conducting semiconductor layer 26 and a further p-conducting semiconductor layer 27. Between the active region 20 and the further active region 25, a first tunnel layer 23 and a second tunnel layer 24 are arranged. The first tunnel layer and the second tunnel layer form a tunnel contact, via which the active regions 20, 25 are electrically interconnected in series. As a result of the additional active region, the total radiation power that can be generated in the semiconductor body can be increased.
• the tunnel layers 23, 24 are preferably with respect to the conduction type different from each other and have further preferably a high doping concentration, more preferably of at least 1 x 10 19 cm "3 on.
• the p-type is Semiconductor layer 22 on the Aufwachsubstrat 50 facing away from the n-type semiconductor layer 21 is arranged.
• the n-type semiconductor layer 21 in this embodiment covers the p-type semiconductor layer 27 on the side facing away from the growth substrate 50.
• the p-type semiconductor layer is thus deposited on the growth substrate after the n-type semiconductor layer 21.
• the further p-type semiconductor layer 27 may be formed substantially like the p-type semiconductor layer 22 here. When the p-type semiconductor layers 22 are activated, they are exposed, so that hydrogen can escape from this semiconductor layer unhindered.
• the further p-type semiconductor layer 27 is covered by the n-type semiconductor layer 21 on the side facing away from the carrier 50. Due to the further dopant formed in the n-type semiconductor layer 21, this n-type semiconductor layer has an increased permeability to hydrogen, so that upon activation of the further p-type semiconductor layer 27, hydrogen can pass through the n-type semiconductor layer 21.
• FIGS. 4A and 4B An exemplary embodiment of a method for producing a semiconductor body is shown schematically in FIGS. 4A and 4B by means of intermediate steps. The method is described by way of example with reference to the production of a semiconductor body, which is designed as described in connection with FIG.
• a semiconductor layer 220 is deposited, which contains a p-type dopant and hydrogen.
• an active region 20 and an n-type semiconductor layer 21 are deposited.
• the semiconductor layer, the active region 20 and the n-type semiconductor layer 21 form the semiconductor body 2.
• the semiconductor layer 220 is activated. This can be done, for example, thermally.
• hydrogen can diffuse out of the semiconductor layer through the active region and the n-conducting semiconductor layer 21. The hydrogen can therefore be expelled from the semiconductor body 2 on the side facing away from the growth substrate.

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• Led Devices (AREA)
• Crystals, And After-Treatments Of Crystals (AREA)
• Manufacturing Of Electric Cables (AREA)
• Photovoltaic Devices (AREA)
• Light Receiving Elements (AREA)

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• 2008
  • 2008-06-13 DE DE102008028345A patent/DE102008028345A1/de not_active Withdrawn
• 2009
  • 2009-05-28 WO PCT/DE2009/000756 patent/WO2009149687A1/de not_active Ceased
  • 2009-05-28 KR KR1020107020378A patent/KR101642524B1/ko active Active
  • 2009-05-28 JP JP2011512826A patent/JP5661614B2/ja not_active Expired - Fee Related
  • 2009-05-28 CN CN2009801090568A patent/CN101971372B/zh active Active
  • 2009-05-28 US US12/922,864 patent/US8581264B2/en active Active
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