JP5661614B2 - 半導体ボディおよび半導体ボディの製造方法 - Google Patents

半導体ボディおよび半導体ボディの製造方法 Download PDF

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Publication number
JP5661614B2
JP5661614B2 JP2011512826A JP2011512826A JP5661614B2 JP 5661614 B2 JP5661614 B2 JP 5661614B2 JP 2011512826 A JP2011512826 A JP 2011512826A JP 2011512826 A JP2011512826 A JP 2011512826A JP 5661614 B2 JP5661614 B2 JP 5661614B2
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semiconductor layer
type conductive
conductive semiconductor
type
dopant
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JP2011512826A
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Japanese (ja)
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JP2011523219A5 (enExample
JP2011523219A (ja
Inventor
マルチン ストラスバーク
マルチン ストラスバーク
ハンス−ユルゲン ルガウアー
ハンス−ユルゲン ルガウアー
ヴィンセント グロリア
ヴィンセント グロリア
ベルトホールド ハーン
ベルトホールド ハーン
リチャード フローテル
リチャード フローテル
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
JP2011512826A 2008-06-13 2009-05-28 半導体ボディおよび半導体ボディの製造方法 Expired - Fee Related JP5661614B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008028345.2 2008-06-13
DE102008028345A DE102008028345A1 (de) 2008-06-13 2008-06-13 Halbleiterkörper und Verfahren zur Herstellung eines Halbleiterkörpers
PCT/DE2009/000756 WO2009149687A1 (de) 2008-06-13 2009-05-28 Halbleiterkörper und verfahren zur herstellung eines halbleiterkörpers

Publications (3)

Publication Number Publication Date
JP2011523219A JP2011523219A (ja) 2011-08-04
JP2011523219A5 JP2011523219A5 (enExample) 2012-03-08
JP5661614B2 true JP5661614B2 (ja) 2015-01-28

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JP2011512826A Expired - Fee Related JP5661614B2 (ja) 2008-06-13 2009-05-28 半導体ボディおよび半導体ボディの製造方法

Country Status (9)

Country Link
US (1) US8581264B2 (enExample)
EP (1) EP2286469B1 (enExample)
JP (1) JP5661614B2 (enExample)
KR (1) KR101642524B1 (enExample)
CN (1) CN101971372B (enExample)
AT (1) ATE540432T1 (enExample)
DE (1) DE102008028345A1 (enExample)
TW (1) TWI396305B (enExample)
WO (1) WO2009149687A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI466343B (zh) * 2012-01-06 2014-12-21 華夏光股份有限公司 發光二極體裝置
DE102013104192A1 (de) * 2013-04-25 2014-10-30 Osram Opto Semiconductors Gmbh Halbleiterbauelement mit einer Zwischenschicht
US10236409B2 (en) 2016-05-20 2019-03-19 Lumileds Llc Methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers in light emitting devices
KR101931798B1 (ko) * 2017-09-19 2018-12-21 주식회사 썬다이오드코리아 다중 터널 정션 구조를 가지는 발광 다이오드

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US97269A (en) * 1869-11-30 Harrison berdan and john bantly
US197104A (en) * 1877-11-13 Improvement in trusses
US203407A (en) * 1878-05-07 Improvement in piano-forte actions
US90900A (en) * 1869-06-01 Improved wooden shoe
US58465A (en) * 1866-10-02 Improvement in carriage-shackles
US104399A (en) * 1870-06-21 Improvement in cultivators
US187568A (en) * 1877-02-20 Improvement in harness-saddle pads
JPH10242586A (ja) * 1997-02-24 1998-09-11 Fuji Electric Co Ltd Ｉｉｉ 族窒化物半導体装置およびその製造方法
JP3916361B2 (ja) 2000-02-18 2007-05-16 独立行政法人科学技術振興機構 低抵抗ｐ型単結晶ＺｎＳ薄膜およびその製造方法
US20020157596A1 (en) * 2001-04-30 2002-10-31 Stockman Stephen A. Forming low resistivity p-type gallium nitride
US6537838B2 (en) 2001-06-11 2003-03-25 Limileds Lighting, U.S., Llc Forming semiconductor structures including activated acceptors in buried p-type III-V layers
JP4233268B2 (ja) * 2002-04-23 2009-03-04 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
JP2004134750A (ja) * 2002-09-19 2004-04-30 Toyoda Gosei Co Ltd ｐ型ＩＩＩ族窒化物系化合物半導体の製造方法
TW561637B (en) * 2002-10-16 2003-11-11 Epistar Corp LED having contact layer with dual dopant state
KR20050093319A (ko) 2004-03-18 2005-09-23 삼성전기주식회사 발광효율이 개선된 질화물 반도체 발광소자 및 그 제조방법
US7061026B2 (en) * 2004-04-16 2006-06-13 Arima Optoelectronics Corp. High brightness gallium nitride-based light emitting diode with transparent conducting oxide spreading layer
US7095052B2 (en) * 2004-10-22 2006-08-22 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Method and structure for improved LED light output
US7720124B2 (en) * 2005-03-03 2010-05-18 Panasonic Corporation Semiconductor device and fabrication method thereof
DE102005035722B9 (de) 2005-07-29 2021-11-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
TWI277226B (en) * 2005-10-24 2007-03-21 Formosa Epitaxy Inc Light emitting diode
DE102007019079A1 (de) 2007-01-26 2008-07-31 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102007018307A1 (de) * 2007-01-26 2008-07-31 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
US7759670B2 (en) 2007-06-12 2010-07-20 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current guiding structure

Also Published As

Publication number Publication date
US8581264B2 (en) 2013-11-12
DE102008028345A1 (de) 2009-12-17
TW201019508A (en) 2010-05-16
CN101971372A (zh) 2011-02-09
KR20110015510A (ko) 2011-02-16
ATE540432T1 (de) 2012-01-15
EP2286469B1 (de) 2012-01-04
KR101642524B1 (ko) 2016-07-25
EP2286469A1 (de) 2011-02-23
JP2011523219A (ja) 2011-08-04
US20110073902A1 (en) 2011-03-31
TWI396305B (zh) 2013-05-11
WO2009149687A1 (de) 2009-12-17
CN101971372B (zh) 2013-05-15

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