JP5616720B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

Info

Publication number
JP5616720B2
JP5616720B2 JP2010192634A JP2010192634A JP5616720B2 JP 5616720 B2 JP5616720 B2 JP 5616720B2 JP 2010192634 A JP2010192634 A JP 2010192634A JP 2010192634 A JP2010192634 A JP 2010192634A JP 5616720 B2 JP5616720 B2 JP 5616720B2
Authority
JP
Japan
Prior art keywords
conductivity type
gate electrode
diffusion layer
conductivity
trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010192634A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012049466A5 (https=
JP2012049466A (ja
Inventor
雅幸 橋谷
雅幸 橋谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP2010192634A priority Critical patent/JP5616720B2/ja
Priority to TW100129953A priority patent/TWI525816B/zh
Priority to US13/199,283 priority patent/US8643093B2/en
Priority to KR1020110086472A priority patent/KR101798241B1/ko
Priority to CN201110253488.5A priority patent/CN102386233B/zh
Publication of JP2012049466A publication Critical patent/JP2012049466A/ja
Publication of JP2012049466A5 publication Critical patent/JP2012049466A5/ja
Application granted granted Critical
Publication of JP5616720B2 publication Critical patent/JP5616720B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/154—Dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2010192634A 2010-08-30 2010-08-30 半導体装置およびその製造方法 Expired - Fee Related JP5616720B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010192634A JP5616720B2 (ja) 2010-08-30 2010-08-30 半導体装置およびその製造方法
TW100129953A TWI525816B (zh) 2010-08-30 2011-08-22 Semiconductor device and manufacturing method thereof
US13/199,283 US8643093B2 (en) 2010-08-30 2011-08-24 Semiconductor device and method of manufacturing the same
KR1020110086472A KR101798241B1 (ko) 2010-08-30 2011-08-29 반도체 장치 및 그 제조 방법
CN201110253488.5A CN102386233B (zh) 2010-08-30 2011-08-30 半导体器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010192634A JP5616720B2 (ja) 2010-08-30 2010-08-30 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2012049466A JP2012049466A (ja) 2012-03-08
JP2012049466A5 JP2012049466A5 (https=) 2013-07-25
JP5616720B2 true JP5616720B2 (ja) 2014-10-29

Family

ID=45695989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010192634A Expired - Fee Related JP5616720B2 (ja) 2010-08-30 2010-08-30 半導体装置およびその製造方法

Country Status (5)

Country Link
US (1) US8643093B2 (https=)
JP (1) JP5616720B2 (https=)
KR (1) KR101798241B1 (https=)
CN (1) CN102386233B (https=)
TW (1) TWI525816B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5616720B2 (ja) * 2010-08-30 2014-10-29 セイコーインスツル株式会社 半導体装置およびその製造方法
JP6077251B2 (ja) * 2012-09-28 2017-02-08 エスアイアイ・セミコンダクタ株式会社 半導体装置
KR102046987B1 (ko) 2013-08-30 2019-11-20 삼성전자 주식회사 반도체 소자 및 그 제조방법
TWI559531B (zh) * 2014-08-20 2016-11-21 新唐科技股份有限公司 絕緣閘極雙極性電晶體及其製造方法
JP2018117070A (ja) * 2017-01-19 2018-07-26 エイブリック株式会社 半導体装置及びその製造方法
CN109461769B (zh) * 2018-12-10 2024-03-12 无锡紫光微电子有限公司 一种沟槽栅igbt器件结构及其制作方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2876670B2 (ja) 1989-12-26 1999-03-31 日本電気株式会社 不揮発性半導体記憶装置の製造方法
JP3092834B2 (ja) 1992-01-17 2000-09-25 三菱電機株式会社 素子分離のための半導体装置およびその製造方法
JP2917922B2 (ja) 1996-07-15 1999-07-12 日本電気株式会社 半導体装置及びその製造方法
JP2000223705A (ja) * 1999-01-29 2000-08-11 Nissan Motor Co Ltd 半導体装置
US6413822B2 (en) * 1999-04-22 2002-07-02 Advanced Analogic Technologies, Inc. Super-self-aligned fabrication process of trench-gate DMOS with overlying device layer
US6617226B1 (en) * 1999-06-30 2003-09-09 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
JP4091242B2 (ja) * 1999-10-18 2008-05-28 セイコーインスツル株式会社 縦形ｍｏｓトランジスタ及びその製造方法
KR100381953B1 (ko) * 2001-03-16 2003-04-26 삼성전자주식회사 노어형 플래시 메모리 소자의 제조방법
JP4025063B2 (ja) * 2001-12-06 2007-12-19 株式会社ルネサステクノロジ 半導体装置
US6861701B2 (en) * 2003-03-05 2005-03-01 Advanced Analogic Technologies, Inc. Trench power MOSFET with planarized gate bus
JP4945055B2 (ja) * 2003-08-04 2012-06-06 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP4176734B2 (ja) * 2004-05-14 2008-11-05 株式会社東芝 トレンチｍｏｓｆｅｔ
JP5302493B2 (ja) * 2005-03-30 2013-10-02 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
JP5984282B2 (ja) 2006-04-27 2016-09-06 富士電機株式会社 縦型トレンチ型絶縁ゲートｍｏｓ半導体装置
JP2008085278A (ja) * 2006-09-29 2008-04-10 Ricoh Co Ltd 半導体装置及びその製造方法
US8431958B2 (en) * 2006-11-16 2013-04-30 Alpha And Omega Semiconductor Ltd Optimized configurations to integrate steering diodes in low capacitance transient voltage suppressor (TVS)
WO2008153142A1 (ja) * 2007-06-15 2008-12-18 Rohm Co., Ltd. 半導体装置
JP5767430B2 (ja) 2007-08-10 2015-08-19 ローム株式会社 半導体装置および半導体装置の製造方法
JP5386120B2 (ja) 2008-07-15 2014-01-15 ローム株式会社 半導体装置および半導体装置の製造方法
JP2010147219A (ja) * 2008-12-18 2010-07-01 Renesas Electronics Corp 半導体装置及びその製造方法
JP5626356B2 (ja) * 2010-05-27 2014-11-19 富士電機株式会社 Ｍｏｓ駆動型半導体装置およびｍｏｓ駆動型半導体装置の製造方法
DE102010030768B4 (de) * 2010-06-30 2012-05-31 GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG Herstellverfahren für ein Halbleiterbauelement als Transistor mit eingebettetem Si/Ge-Material mit geringerem Abstand und besserer Gleichmäßigkeit und Transistor
JP5616720B2 (ja) * 2010-08-30 2014-10-29 セイコーインスツル株式会社 半導体装置およびその製造方法
JP6031681B2 (ja) * 2011-04-20 2016-11-24 パナソニックＩｐマネジメント株式会社 縦型ゲート半導体装置およびその製造方法

Also Published As

Publication number Publication date
US20120049275A1 (en) 2012-03-01
TWI525816B (zh) 2016-03-11
CN102386233A (zh) 2012-03-21
KR20120021240A (ko) 2012-03-08
TW201214708A (en) 2012-04-01
KR101798241B1 (ko) 2017-11-15
CN102386233B (zh) 2015-11-11
US8643093B2 (en) 2014-02-04
JP2012049466A (ja) 2012-03-08

Similar Documents

Publication Publication Date Title
KR100967883B1 (ko) 개선된 드레인 접점을 가진 트렌치 ｄｍｏｓ 디바이스
JP5298565B2 (ja) 半導体装置およびその製造方法
TWI488297B (zh) 元件與其形成方法
JP5159365B2 (ja) 半導体装置およびその製造方法
CN102983164A (zh) 半导体器件及其制造方法
CN115832019A (zh) 用于沟槽栅极场效应晶体管的场板布置
JP5616720B2 (ja) 半導体装置およびその製造方法
TWI470699B (zh) 具有超級介面之溝槽型功率電晶體元件及其製作方法
TWI503983B (zh) 半導體裝置及其製造方法
KR101469343B1 (ko) 수직 파워 ｍｏｓｆｅｔ 및 그 제조 방법
JP5522907B2 (ja) ＳｉＣ膜の加工方法、半導体装置およびその製造方法
JP5881100B2 (ja) 半導体装置の製造方法
JP5719899B2 (ja) 半導体装置
TWI423343B (zh) 半導體積體電路裝置及其製造方法
JP2012216577A (ja) 絶縁ゲート型半導体装置
JP2008135474A (ja) 半導体装置
CN113555357A (zh) 电荷耦合场效应晶体管嵌入的单片电荷耦合场效应整流器
CN104037229B (zh) 半导体装置以及用于制造该半导体装置的方法
JP2013089618A (ja) 半導体装置
JP5386120B2 (ja) 半導体装置および半導体装置の製造方法
JP2009224495A (ja) 絶縁ゲート型半導体装置およびその製造方法
JP5070751B2 (ja) 半導体装置およびその製造方法
US8823138B1 (en) Semiconductor resistor including a dielectric layer including a species creating fixed charges and method for the formation thereof
JP5390758B2 (ja) 半導体装置
JP4950648B2 (ja) 半導体装置およびその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130611

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130611

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140617

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140619

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140805

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140826

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140912

R150 Certificate of patent or registration of utility model

Ref document number: 5616720

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees