TWI525816B - Semiconductor device and manufacturing method thereof - Google Patents
Semiconductor device and manufacturing method thereof Download PDFInfo
- Publication number
- TWI525816B TWI525816B TW100129953A TW100129953A TWI525816B TW I525816 B TWI525816 B TW I525816B TW 100129953 A TW100129953 A TW 100129953A TW 100129953 A TW100129953 A TW 100129953A TW I525816 B TWI525816 B TW I525816B
- Authority
- TW
- Taiwan
- Prior art keywords
- conductivity type
- gate electrode
- diffusion layer
- film
- oxide film
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/63—Vertical IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
- H10D62/152—Source regions of DMOS transistors
- H10D62/154—Dispositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
- H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010192634A JP5616720B2 (ja) | 2010-08-30 | 2010-08-30 | 半導体装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201214708A TW201214708A (en) | 2012-04-01 |
| TWI525816B true TWI525816B (zh) | 2016-03-11 |
Family
ID=45695989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100129953A TWI525816B (zh) | 2010-08-30 | 2011-08-22 | Semiconductor device and manufacturing method thereof |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8643093B2 (https=) |
| JP (1) | JP5616720B2 (https=) |
| KR (1) | KR101798241B1 (https=) |
| CN (1) | CN102386233B (https=) |
| TW (1) | TWI525816B (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5616720B2 (ja) * | 2010-08-30 | 2014-10-29 | セイコーインスツル株式会社 | 半導体装置およびその製造方法 |
| JP6077251B2 (ja) * | 2012-09-28 | 2017-02-08 | エスアイアイ・セミコンダクタ株式会社 | 半導体装置 |
| KR102046987B1 (ko) | 2013-08-30 | 2019-11-20 | 삼성전자 주식회사 | 반도체 소자 및 그 제조방법 |
| TWI559531B (zh) * | 2014-08-20 | 2016-11-21 | 新唐科技股份有限公司 | 絕緣閘極雙極性電晶體及其製造方法 |
| JP2018117070A (ja) * | 2017-01-19 | 2018-07-26 | エイブリック株式会社 | 半導体装置及びその製造方法 |
| CN109461769B (zh) * | 2018-12-10 | 2024-03-12 | 无锡紫光微电子有限公司 | 一种沟槽栅igbt器件结构及其制作方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2876670B2 (ja) | 1989-12-26 | 1999-03-31 | 日本電気株式会社 | 不揮発性半導体記憶装置の製造方法 |
| JP3092834B2 (ja) | 1992-01-17 | 2000-09-25 | 三菱電機株式会社 | 素子分離のための半導体装置およびその製造方法 |
| JP2917922B2 (ja) | 1996-07-15 | 1999-07-12 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| JP2000223705A (ja) * | 1999-01-29 | 2000-08-11 | Nissan Motor Co Ltd | 半導体装置 |
| US6413822B2 (en) * | 1999-04-22 | 2002-07-02 | Advanced Analogic Technologies, Inc. | Super-self-aligned fabrication process of trench-gate DMOS with overlying device layer |
| US6617226B1 (en) * | 1999-06-30 | 2003-09-09 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
| JP4091242B2 (ja) * | 1999-10-18 | 2008-05-28 | セイコーインスツル株式会社 | 縦形ｍｏｓトランジスタ及びその製造方法 |
| KR100381953B1 (ko) * | 2001-03-16 | 2003-04-26 | 삼성전자주식회사 | 노어형 플래시 메모리 소자의 제조방법 |
| JP4025063B2 (ja) * | 2001-12-06 | 2007-12-19 | 株式会社ルネサステクノロジ | 半導体装置 |
| US6861701B2 (en) * | 2003-03-05 | 2005-03-01 | Advanced Analogic Technologies, Inc. | Trench power MOSFET with planarized gate bus |
| JP4945055B2 (ja) * | 2003-08-04 | 2012-06-06 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP4176734B2 (ja) * | 2004-05-14 | 2008-11-05 | 株式会社東芝 | トレンチｍｏｓｆｅｔ |
| JP5302493B2 (ja) * | 2005-03-30 | 2013-10-02 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置 |
| JP5984282B2 (ja) | 2006-04-27 | 2016-09-06 | 富士電機株式会社 | 縦型トレンチ型絶縁ゲートｍｏｓ半導体装置 |
| JP2008085278A (ja) * | 2006-09-29 | 2008-04-10 | Ricoh Co Ltd | 半導体装置及びその製造方法 |
| US8431958B2 (en) * | 2006-11-16 | 2013-04-30 | Alpha And Omega Semiconductor Ltd | Optimized configurations to integrate steering diodes in low capacitance transient voltage suppressor (TVS) |
| WO2008153142A1 (ja) * | 2007-06-15 | 2008-12-18 | Rohm Co., Ltd. | 半導体装置 |
| JP5767430B2 (ja) | 2007-08-10 | 2015-08-19 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
| JP5386120B2 (ja) | 2008-07-15 | 2014-01-15 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
| JP2010147219A (ja) * | 2008-12-18 | 2010-07-01 | Renesas Electronics Corp | 半導体装置及びその製造方法 |
| JP5626356B2 (ja) * | 2010-05-27 | 2014-11-19 | 富士電機株式会社 | Ｍｏｓ駆動型半導体装置およびｍｏｓ駆動型半導体装置の製造方法 |
| DE102010030768B4 (de) * | 2010-06-30 | 2012-05-31 | GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG | Herstellverfahren für ein Halbleiterbauelement als Transistor mit eingebettetem Si/Ge-Material mit geringerem Abstand und besserer Gleichmäßigkeit und Transistor |
| JP5616720B2 (ja) * | 2010-08-30 | 2014-10-29 | セイコーインスツル株式会社 | 半導体装置およびその製造方法 |
| JP6031681B2 (ja) * | 2011-04-20 | 2016-11-24 | パナソニックＩｐマネジメント株式会社 | 縦型ゲート半導体装置およびその製造方法 |
-
2010
- 2010-08-30 JP JP2010192634A patent/JP5616720B2/ja not_active Expired - Fee Related
-
2011
- 2011-08-22 TW TW100129953A patent/TWI525816B/zh not_active IP Right Cessation
- 2011-08-24 US US13/199,283 patent/US8643093B2/en not_active Expired - Fee Related
- 2011-08-29 KR KR1020110086472A patent/KR101798241B1/ko not_active Expired - Fee Related
- 2011-08-30 CN CN201110253488.5A patent/CN102386233B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20120049275A1 (en) | 2012-03-01 |
| CN102386233A (zh) | 2012-03-21 |
| KR20120021240A (ko) | 2012-03-08 |
| TW201214708A (en) | 2012-04-01 |
| KR101798241B1 (ko) | 2017-11-15 |
| CN102386233B (zh) | 2015-11-11 |
| US8643093B2 (en) | 2014-02-04 |
| JP5616720B2 (ja) | 2014-10-29 |
| JP2012049466A (ja) | 2012-03-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |