JP5302493B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5302493B2 JP5302493B2 JP2005098969A JP2005098969A JP5302493B2 JP 5302493 B2 JP5302493 B2 JP 5302493B2 JP 2005098969 A JP2005098969 A JP 2005098969A JP 2005098969 A JP2005098969 A JP 2005098969A JP 5302493 B2 JP5302493 B2 JP 5302493B2
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- diffusion layer
- type diffusion
- drain region
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 75
- 238000009792 diffusion process Methods 0.000 claims abstract description 96
- 239000012535 impurity Substances 0.000 claims description 29
- 238000013459 approach Methods 0.000 claims description 10
- 230000007423 decrease Effects 0.000 claims description 5
- 230000005684 electric field Effects 0.000 abstract description 16
- 239000000758 substrate Substances 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000000969 carrier Substances 0.000 description 9
- 230000003071 parasitic effect Effects 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000002784 hot electron Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- E—FIXED CONSTRUCTIONS
- E05—LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
- E05B—LOCKS; ACCESSORIES THEREFOR; HANDCUFFS
- E05B47/00—Operating or controlling locks or other fastening devices by electric or magnetic means
- E05B47/0001—Operating or controlling locks or other fastening devices by electric or magnetic means with electric actuators; Constructional features thereof
- E05B47/0012—Operating or controlling locks or other fastening devices by electric or magnetic means with electric actuators; Constructional features thereof with rotary electromotors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
2 P型の単結晶シリコン基板
4 N型のエピタキシャル層
5 P型の拡散層
6 P型の拡散層
7 N型の拡散層
8 N型の拡散層
9 ゲート電極
12 ゲート酸化膜
Claims (5)
- 半導体層と、前記半導体層に形成されるドレイン領域及びソース領域と、前記ドレイン領域と前記ソース領域との間に位置するチャネル領域と、前記チャネル領域が位置するバックゲート領域と、前記半導体層上面に形成されるゲート酸化膜と、前記ゲート酸化膜上に形成されるゲート電極とを有する半導体装置において、
前記バックゲート領域の拡散層は、前記半導体層表面まで拡散し、且つ、前記ドレイン領域の不純物濃度のピークよりも前記半導体層深部に不純物濃度のピークを有し、前記半導体層表面に近づくにつれて緩やかに不純物濃度が低下する拡散層であり、
前記ドレイン領域の拡散層は、前記半導体層表面に対して傾斜を有し、前記傾斜の接線と前記半導体層表面との成す角度は、前記ゲート電極の下方にて前記半導体層表面に近づくにつれて小さくなることを特徴とする半導体装置。 - 前記ドレインが形成されている前記バックゲート領域の濃度は、その濃度勾配に2箇所の変曲領域を有していることを特徴とする請求項1に記載の半導体装置。
- 前記バックゲート領域には前記ドレイン領域及び前記ソース領域が形成されており、前記ソース領域は前記半導体層表面に対して傾斜を有し、前記傾斜の接線と前記半導体層表面との成す角度は、前記半導体層表面に近づくにつれて小さくなることを特徴とする請求項1に記載の半導体装置。
- 前記ドレイン領域は、SD構造またはDDD構造であることを特徴とする請求項1に記載の半導体装置。
- 前記ゲート酸化膜は、50〜340Åの膜厚を有することを特徴とする請求項1に記載の半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005098969A JP5302493B2 (ja) | 2005-03-30 | 2005-03-30 | 半導体装置 |
KR1020060026436A KR100755146B1 (ko) | 2005-03-30 | 2006-03-23 | 반도체 장치 |
CNB2006100714280A CN100517750C (zh) | 2005-03-30 | 2006-03-28 | 半导体装置 |
TW095110879A TWI316756B (en) | 2005-03-30 | 2006-03-29 | Semiconductor device |
US11/393,530 US7579651B2 (en) | 2005-03-30 | 2006-03-29 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005098969A JP5302493B2 (ja) | 2005-03-30 | 2005-03-30 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006278933A JP2006278933A (ja) | 2006-10-12 |
JP5302493B2 true JP5302493B2 (ja) | 2013-10-02 |
Family
ID=37030689
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005098969A Active JP5302493B2 (ja) | 2005-03-30 | 2005-03-30 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7579651B2 (ja) |
JP (1) | JP5302493B2 (ja) |
KR (1) | KR100755146B1 (ja) |
CN (1) | CN100517750C (ja) |
TW (1) | TWI316756B (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5307966B2 (ja) * | 2005-03-30 | 2013-10-02 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置の製造方法 |
US7492258B1 (en) | 2006-03-21 | 2009-02-17 | Radiofy Llc | Systems and methods for RFID security |
JP5081030B2 (ja) * | 2008-03-26 | 2012-11-21 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
US8410549B2 (en) * | 2009-03-27 | 2013-04-02 | National Semiconductor Corporation | Structure and fabrication of field-effect transistor using empty well in combination with source/drain extensions or/and halo pocket |
JP5616720B2 (ja) * | 2010-08-30 | 2014-10-29 | セイコーインスツル株式会社 | 半導体装置およびその製造方法 |
TWI415173B (zh) * | 2011-05-19 | 2013-11-11 | Anpec Electronics Corp | 低米勒電容之超級接面功率電晶體製造方法 |
US9633854B2 (en) | 2011-06-23 | 2017-04-25 | Institute of Microelectronics, Chinese Academy of Sciences | MOSFET and method for manufacturing the same |
CN102842617B (zh) * | 2011-06-23 | 2015-09-16 | 中国科学院微电子研究所 | Mosfet及其制造方法 |
US9711713B1 (en) | 2016-01-15 | 2017-07-18 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure, electrode structure and method of forming the same |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR910005395B1 (ko) * | 1988-08-17 | 1991-07-29 | 삼성전관 주식회사 | Ccd형 고체촬영소자의 스미어 특성 측정장치 |
JPH04103161A (ja) | 1990-08-22 | 1992-04-06 | Toshiba Corp | バイポーラトランジスタ・絶縁ゲート型トランジスタ混載半導体装置 |
JP2760709B2 (ja) * | 1992-07-15 | 1998-06-04 | 株式会社東芝 | 高耐圧のldd構造を有する半導体装置及びその製造方法 |
JPH06112478A (ja) * | 1992-09-30 | 1994-04-22 | Toshiba Corp | 半導体装置及びその製造方法 |
US5622880A (en) * | 1994-08-18 | 1997-04-22 | Sun Microsystems, Inc. | Method of making a low power, high performance junction transistor |
JP2001250941A (ja) | 2000-03-06 | 2001-09-14 | Rohm Co Ltd | 半導体装置およびその製法 |
US6548842B1 (en) * | 2000-03-31 | 2003-04-15 | National Semiconductor Corporation | Field-effect transistor for alleviating short-channel effects |
US6528850B1 (en) * | 2000-05-03 | 2003-03-04 | Linear Technology Corporation | High voltage MOS transistor with up-retro well |
JP2002083941A (ja) | 2000-09-06 | 2002-03-22 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP2002299475A (ja) * | 2001-03-30 | 2002-10-11 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2003158198A (ja) * | 2001-09-07 | 2003-05-30 | Seiko Instruments Inc | 相補型mos半導体装置 |
JP4098208B2 (ja) | 2003-10-01 | 2008-06-11 | 東芝マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP5307966B2 (ja) | 2005-03-30 | 2013-10-02 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置の製造方法 |
-
2005
- 2005-03-30 JP JP2005098969A patent/JP5302493B2/ja active Active
-
2006
- 2006-03-23 KR KR1020060026436A patent/KR100755146B1/ko not_active IP Right Cessation
- 2006-03-28 CN CNB2006100714280A patent/CN100517750C/zh not_active Expired - Fee Related
- 2006-03-29 US US11/393,530 patent/US7579651B2/en not_active Expired - Fee Related
- 2006-03-29 TW TW095110879A patent/TWI316756B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN1841776A (zh) | 2006-10-04 |
JP2006278933A (ja) | 2006-10-12 |
KR20060106692A (ko) | 2006-10-12 |
CN100517750C (zh) | 2009-07-22 |
KR100755146B1 (ko) | 2007-09-04 |
US7579651B2 (en) | 2009-08-25 |
TW200711133A (en) | 2007-03-16 |
TWI316756B (en) | 2009-11-01 |
US20060220125A1 (en) | 2006-10-05 |
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