JP5608753B2 - {20−21}ガリウム及び窒素含有基板上の低電圧レーザダイオード - Google Patents
{20−21}ガリウム及び窒素含有基板上の低電圧レーザダイオード Download PDFInfo
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- JP5608753B2 JP5608753B2 JP2012529905A JP2012529905A JP5608753B2 JP 5608753 B2 JP5608753 B2 JP 5608753B2 JP 2012529905 A JP2012529905 A JP 2012529905A JP 2012529905 A JP2012529905 A JP 2012529905A JP 5608753 B2 JP5608753 B2 JP 5608753B2
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- 239000000758 substrate Substances 0.000 title claims description 78
- 229910052733 gallium Inorganic materials 0.000 title claims description 68
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 title claims description 62
- 239000000463 material Substances 0.000 claims description 93
- 238000005253 cladding Methods 0.000 claims description 82
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 63
- 230000003287 optical effect Effects 0.000 claims description 63
- 230000004888 barrier function Effects 0.000 claims description 62
- 229910052782 aluminium Inorganic materials 0.000 claims description 59
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 59
- 230000000903 blocking effect Effects 0.000 claims description 23
- 229910002704 AlGaN Inorganic materials 0.000 claims description 16
- 239000002019 doping agent Substances 0.000 claims description 14
- 229910052738 indium Inorganic materials 0.000 claims description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 239000011777 magnesium Substances 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 112
- 229910002601 GaN Inorganic materials 0.000 description 54
- 238000003776 cleavage reaction Methods 0.000 description 31
- 230000007017 scission Effects 0.000 description 31
- 230000008569 process Effects 0.000 description 29
- 241000894007 species Species 0.000 description 27
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 26
- 238000010586 diagram Methods 0.000 description 24
- 239000013078 crystal Substances 0.000 description 23
- 238000000576 coating method Methods 0.000 description 16
- 238000012986 modification Methods 0.000 description 16
- 230000004048 modification Effects 0.000 description 16
- 239000011248 coating agent Substances 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000013461 design Methods 0.000 description 12
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 8
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 238000003672 processing method Methods 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- -1 argon ion Chemical class 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 241000588731 Hafnia Species 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000006117 anti-reflective coating Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000005670 electromagnetic radiation Effects 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- FOXXZZGDIAQPQI-XKNYDFJKSA-N Asp-Pro-Ser-Ser Chemical compound OC(=O)C[C@H](N)C(=O)N1CCC[C@H]1C(=O)N[C@@H](CO)C(=O)N[C@@H](CO)C(O)=O FOXXZZGDIAQPQI-XKNYDFJKSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000008119 colloidal silica Substances 0.000 description 2
- 238000004134 energy conservation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229920001169 thermoplastic Polymers 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 229910001018 Cast iron Inorganic materials 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 206010021118 Hypotonia Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- JUWSSMXCCAMYGX-UHFFFAOYSA-N gold platinum Chemical compound [Pt].[Au] JUWSSMXCCAMYGX-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000001356 surgical procedure Methods 0.000 description 1
- 239000011009 synthetic ruby Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
- H01S5/320275—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth semi-polar orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/467—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
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- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
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- H01S5/00—Semiconductor lasers
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- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
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- H01S5/00—Semiconductor lasers
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- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
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Description
本出願は、米国シリアル番号第61/243,502(出願日:2009年9月17日、名称「Growth Structures and Methods for Forming Laser Diodes on {20−21} or Off Cut Gallium and Nitrogen Containing Substrates」)、米国シリアル番号第12/883,093号(出願日:2010年9月15日、名称「Growth Structures and Method for Forming Laser Diodes on {20−21} or Off Cut Gallium and Nitrogen Containing Substrates」、及び米国シリアル番号第61/249,568号(出願日:2009年10月7日、名称「Low Voltage Laser Diodes on {20−21} Gallium and Nitrogen Containing Substrates」(アトーニードケット番号第027600−001300US号、0013100US号、001400US号)に対する優先権を主張する。同文献はそれぞれ本発明の譲受人に譲渡され、本明細書中、同文献それぞれを参考のため援用する。
crystal)を励起し、前記ゲイン結晶は1064nmにおいてレーザ出力し、1064nmは周波数変換結晶を通過し、可視532nmへと変換される。その結果得られた緑色レーザ及び青色レーザは、「第二高調波発生型ランプ励起固体レーザ」(LPSS with SHG)と呼ばれ、壁プラグ効率は〜1%でありまたAr−ionガスレーザよりも高効率ではあるものの、それでも、特殊な科学用途及び医療用途以外の広範囲の利用を実現するには、効率、大きさ及び脆弱性の上で問題がある。その上、固体レーザにおいて用いられるゲイン結晶は典型的にはエネルギー保存特性を有しているため、レーザ変調を高速で行うのが困難であり、そのため広範な利用が限定される。
本発明は、光学素子及び関連する方法に関する。詳細には、本発明は、非極性又は半極性ガリウム含有基板(例えば、GaN、A1N、InN、InGaN、AlGaN、及びAlInGaN)を用いた電磁放射のための方法及び素子を提供する。より詳細には、本発明は、{20−21}面のファミリ又は{20−21}面のファミリのオフカット上においてc面及び/又はa面に向かって構成されたガリウム及び窒素含有基板を用いた方法及び素子を提供する。さらに詳細には、本発明は、ガリウム及び窒素含有種を用いた低電圧レーザ素子を提供する。単なる例示であるが、本発明は、光学素子、レーザ、発光ダイオード、太陽電池、光電気化学的水分解及び水素生成、光検出器、集積回路、並びにトランジスタなどに適用することが可能である。
本発明によれば、主に光学素子に関する技術が提供される。より詳細には、本発明は、非極性又は半極性ガリウム含有基板(例えば、GaN、A1N、InN、InGaN、AlGaN、及びAlInGaN)を用いて電磁放射を放出するための方法及び素子を提供する。より詳細には、本発明は、ガリウム及び窒素含有{20−21}基板を用いた方法及び素子を提供する。1つ以上の実施形態によれば、前記ガリウム及び窒素含有{20−21}基板は、c面に向かって又はa面に向かってミスカット(miscut)され得る。しかし、他の構成も可能である。さらに詳細には、本発明は、ガリウム及び窒素含有種を用いた低電圧レーザ素子を提供する。単なる例示であるが、本発明は、光学素子、レーザ、発光ダイオード、太陽電池、光電気化学的水分解及び水素生成、光検出器、集積回路、並びにトランジスタなどに適用することが可能である。特定の実施形態において、本レーザ素子は、以下に説明するように、半極性ガリウム含有基板又は非極性ガリウム含有基板の何れかにおいて用いられ得る。
厚さ100nm〜3000nmのn−GaNクラッディング層であって、Siドーピングレベルが5E17〜3E18cm−3のもの
インジウムのモル分率が3%〜10%のInGaNを含んだn側SCH層であって、厚さが20〜150nmのもの
少なくとも2つの2.0〜5.5nmのInGaN量子井戸を含む複数の量子井戸活性領域層であって、前記少なくとも2つの2.0〜5.5nmのInGaN量子井戸は、薄型の2.5nm以上であり且つ任意に約8nmまでのGaNバリアによって分離されるもの
インジウムのモル分率が1%〜10%のInGaNを含んだp側SCH層であって、厚さが15nm〜100nmのもの
アルミニウムのモル分率が5%〜20%のAlGaNを含んだ電子ブロッキング層であって、厚さが5nm〜20nmであり、Mgでドープされたもの
厚さが400nm〜1000nmのp−GaNクラッディング層であって、Mgドーピングレベルが2E17cm−3〜2E19cm−3のもの
厚さが20nm〜40nmのP++−GaN接触層であって、Mgドーピングレベルが1E19cm−3〜1E21cm−3のもの
もちろん、他の実施形態も可能である。例えば、p−SCHの代用としてのp側GaN導波層の使用、SCH領域内における複数の異なる層の使用、又はEBL層の省略などを行ってもよい。ここでも、他の変更、改変及び代替が可能である。
1.開始;
2.レーザ素子を含む処理後の基板にリッジを設ける;
3.基板の薄板化を後側から行う;
4.後側n接点を形成する;
5.バー構造に構成されたレーザ素子を分離するようにパターンをスクライブする;
6.スクライブパターンを破壊して、複数のバー構造を形成する;
7.バー構造を積み重ねる;
8.バー構造をコートする;
9.バー構造を単一化して、レーザ素子を有する個々のダイにする;
10.他の工程を必要に応じて行う。
Ltd.(英国)又は他のベンダーによって製造される。前記ラッピングジグの利用により、特定の実施形態によるラッピングプロセス時における前記基板の平面性の維持が支援される。一例として、前記基板の開始時の厚さは〜325um+/−20umであるが、他の厚さであってもよい。特定の実施形態において、前記方法は、前記基板のラッピング又は薄板化を60〜80umの厚さになるまで行うが、これよりも厚さを薄くするか又は若干厚めにしてもよい。好適な実施形態において、前記ラッピングジグは、ラッピングプレートと共に構成される。前記ラッピングプレートは、適切な材料(例えば、平面度が5um未満になるように構成された鋳鉄が挙げられるが、他のものであってもよい)によって構成されることが多い。好適には、前記方法は、1部の炭化ケイ素(SiC)と10部の水とを含んだラッピングスラリーを用いるが、他の変更も可能である。特定の実施形態において、前記SiC粒の寸法は約5umである。1つ以上の実施形態において、前記ラッピングプレート速度は、約10回転/分が適している。さらに、前記方法は、1つ以上の実施形態による所望のラッピング速度(例えば、2〜3um/分以上又はこれより若干低め)を達成するようにラッピングジグの圧力ダウンを調整することが可能である。
Claims (22)
- {20−21}結晶性表面領域配向を含むガリウム及び窒素含有基板と;
ガリウム及び窒素含有材料上に形成されたn型クラッディング材料と;
少なくとも3つの量子井戸(MQW)であって、前記量子井戸はそれぞれ2nm以上の厚さを有している量子井戸と、少なくとも1つのバリア層であって、前記バリア層はそれぞれ1.5nm乃至4nmの厚さを有し、前記バリア層の少なくとも1つは一対の量子井戸間に構成されるバリア層とを備えた活性領域と;
前記活性領域上に形成されたp型クラッディング材料とを含み、
前記活性領域は、7ボルト未満の順電圧において60mW以上の出力で動作するように構成されている光学素子。
- 前記p型クラッディング材料はアルミニウム含有材料を実質的に含まない請求項1に記載の光学素子。
- 前記n型クラッディング材料はアルミニウム含有材料を実質的に含んでおらず、前記{20−21}配向は面のファミリを意味している請求項1に記載の光学素子。
- 前記ガリウム及び窒素含有基板は[20−21]または[20−2−1]結晶性表面領域配向の少なくとも1つを含んでいる請求項1に記載の光学素子。
- InGaNを含んだ分離閉じ込めヘテロ構造(SCH)層を更に含んでいる請求項1に記載の光学素子。
- 500〜540nmの緑色波長レジームにおいて動作するレーザダイオードとして動作可能な請求項1に記載の光学素子。
- 前記少なくとも1つのバリア層の厚さは2.5nm〜3.5nmである請求項1に記載の光学素子。
- 前記量子井戸のは厚さは少なくとも2.5nmである請求項1に記載の光学素子。
- 前記{20−21}結晶性表面領域配向はc面及び/又はa面に向かって±0.5度未満でオフカットされている請求項1に記載の光学素子。
- 前記{20−21}結晶性表面領域配向はc面及び/又はa面に向かって±1度未満でオフカットされている請求項1に記載の光学素子。
- 前記{20−21}結晶性表面領域配向はc面及び/又はa面に向かって±3度未満でオフカットされている請求項1に記載の光学素子。
- 前記{20−21}結晶性表面領域配向はc面及び/又はa面に向かって±5度未満でオフカットされている請求項1に記載の光学素子。
- 前記活性領域と前記p型クラッディング材料との間に電子ブロッキング領域を更に含む請求項1に記載の光学素子。
- 前記少なくとも1つのバリア層が、GaN、InGaN、AlGaN、又はInAlGaNから選択される材料によって構成される請求項1に記載の素子。
- 前記量子井戸の各々は少なくともInGaNを含んでいる請求項1に記載の素子。
- 前記活性領域は緑色レーザ出力を発光可能である請求項1に記載の光学素子。
- 600ミクロンのキャビティ長さを有する単一横モード緑色レーザダイオードである請求項1に記載の光学素子。
- 前記結晶性表面領域配向はオフカットされている請求項1に記載の光学素子。
- InGaNを含み、インジウムのモル分率が3%〜10%であり、厚みが20〜150nmであるn側分離閉じ込めヘテロ構造(SCH)層を更に含んだ請求項1に記載の光学素子。
- 前記n型GaNクラッディング材料と前記量子井戸との間に位置したInGaN分離閉じ込めヘテロ構造(SCH)層を更に含み、前記SCHは10nm〜150nmの厚みと1モル%〜12モル%のインジウム組成とを有しており、前記分離閉じ込めヘテロ構造(SCH)層は、任意に、シリコンドーパントを含むn型ドーパントによってドープされていてもよい請求項1に記載の光学素子。
- 前記p型GaNクラッディング材料と前記MQWとの間に位置したInGaN分離閉じ込めヘテロ構造(SCH)層を更に含み、前記SCHは10nm〜150nmの厚みと0モル%〜10モル%のインジウム組成とを有しており、前記分離閉じ込めヘテロ構造(SCH)層は、任意に、マグネシウムドーパントを含むp型ドーパントによってドープされていてもよい請求項1に記載の光学素子。
- プロジェクタ、ハンドセット、又はレーザディスプレイのいずれか1つに設けられる請求項1に記載の光学素子。
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US24350209P | 2009-09-17 | 2009-09-17 | |
US61/243,502 | 2009-09-17 | ||
US24956809P | 2009-10-07 | 2009-10-07 | |
US61/249,568 | 2009-10-07 | ||
US12/883,093 US8355418B2 (en) | 2009-09-17 | 2010-09-15 | Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates |
US12/883,093 | 2010-09-15 | ||
PCT/US2010/049172 WO2011035060A1 (en) | 2009-09-17 | 2010-09-16 | Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates |
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DE (1) | DE112010003697B4 (ja) |
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Also Published As
Publication number | Publication date |
---|---|
US20210376573A1 (en) | 2021-12-02 |
US9853420B2 (en) | 2017-12-26 |
US20110064100A1 (en) | 2011-03-17 |
US10424900B2 (en) | 2019-09-24 |
US20200091684A1 (en) | 2020-03-19 |
US20110064101A1 (en) | 2011-03-17 |
JP2013505586A (ja) | 2013-02-14 |
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DE112010003697T5 (de) | 2013-04-11 |
US8351478B2 (en) | 2013-01-08 |
US20180097337A1 (en) | 2018-04-05 |
US10090644B2 (en) | 2018-10-02 |
US20110064102A1 (en) | 2011-03-17 |
DE112010003697B4 (de) | 2017-04-06 |
US9543738B2 (en) | 2017-01-10 |
US11070031B2 (en) | 2021-07-20 |
US20160013620A9 (en) | 2016-01-14 |
US8355418B2 (en) | 2013-01-15 |
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DE112010003697T8 (de) | 2013-06-20 |
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