CN105163939B - 抗反射涂层 - Google Patents
抗反射涂层 Download PDFInfo
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- CN105163939B CN105163939B CN201480024025.3A CN201480024025A CN105163939B CN 105163939 B CN105163939 B CN 105163939B CN 201480024025 A CN201480024025 A CN 201480024025A CN 105163939 B CN105163939 B CN 105163939B
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- 239000000463 material Substances 0.000 claims abstract description 63
- 229910052751 metal Inorganic materials 0.000 claims abstract description 52
- 239000002184 metal Substances 0.000 claims abstract description 52
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 239000011651 chromium Substances 0.000 claims description 16
- 239000010936 titanium Substances 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 14
- 239000006104 solid solution Substances 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 229910052797 bismuth Inorganic materials 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 239000011572 manganese Substances 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 239000011733 molybdenum Substances 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 239000010955 niobium Substances 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical compound F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 5
- 229920002313 fluoropolymer Polymers 0.000 claims description 5
- 239000004811 fluoropolymer Substances 0.000 claims description 5
- 229920000620 organic polymer Polymers 0.000 claims description 5
- 239000011669 selenium Substances 0.000 claims description 5
- 229910017083 AlN Inorganic materials 0.000 claims description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 4
- 229910005540 GaP Inorganic materials 0.000 claims description 4
- 229910002319 LaF3 Inorganic materials 0.000 claims description 4
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- -1 bismuth chalcogen compound Chemical class 0.000 claims description 4
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 4
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 4
- 229920001577 copolymer Polymers 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 4
- 229910000765 intermetallic Inorganic materials 0.000 claims description 4
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 3
- 229910001632 barium fluoride Inorganic materials 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000005083 Zinc sulfide Substances 0.000 claims description 2
- XJUNRGGMKUAPAP-UHFFFAOYSA-N dioxido(dioxo)molybdenum;lead(2+) Chemical compound [Pb+2].[O-][Mo]([O-])(=O)=O XJUNRGGMKUAPAP-UHFFFAOYSA-N 0.000 claims description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Chemical compound O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 9
- 238000000576 coating method Methods 0.000 abstract description 8
- 239000011248 coating agent Substances 0.000 abstract description 7
- 238000004891 communication Methods 0.000 abstract description 2
- 230000010365 information processing Effects 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 210000002945 adventitial reticular cell Anatomy 0.000 description 31
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 6
- 238000006253 efflorescence Methods 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 206010037844 rash Diseases 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000000985 reflectance spectrum Methods 0.000 description 4
- 239000010948 rhodium Substances 0.000 description 4
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001429 visible spectrum Methods 0.000 description 2
- 206010001513 AIDS related complex Diseases 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical compound OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/321—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer with at least one metal alloy layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/111—Anti-reflection coatings using layers comprising organic materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
- G02B1/116—Multilayers including electrically conducting layers
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Laminated Bodies (AREA)
- Optical Elements Other Than Lenses (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Optical Filters (AREA)
Abstract
本发明涉及光学涂层，并且本发明可以用于显著地减少来自用于光通信和信息处理的显示器或其他装置的外表面的可见光反射。多种实施例中的抗反射涂层由两层或三层组成，包括在多种实施例中厚度范围从2至12纳米的一个金属层以及具有某个范围内的折射率和厚度的一个或两个非金属层，其中所述金属层被置于所述非金属层与基材之间或所述非金属层之间。
Description
发明背景
(a)技术领域
本发明涉及光学涂层，具体地涉及抗反射光学涂层，并且本发明能够用于避免或大大地减少来自用于光通信和信息处理的显示器和装置的环境光反射。
(b)背景技术
例如SPIE(Washington,USA,2004)出版的P.W.Baumeister "Optical CoatingTechnology"，第4.3.2章节第1-3页附图1-7和第4-11页中描述的基材上的一种公知的抗反射涂层包括一个非金属层，该非金属层具有比基材折射率小的折射率且为四分之一波长的光学厚度(层的光学厚度是其物理厚度乘以该层的折射率)。公知的抗反射涂层将环境光残余反射降低到1.5-2％，而裸基材为4-5％。此一层抗反射涂层的缺点在于相对较高的残余反射。
例如SPIE(Washington,USA,2004)出版的P.W.Baumeister"Optical CoatingTechnology"，第4.3.3.1章节第4-12页中描述的基材上的另一种公知的抗反射涂层包括第一非金属层和第二非金属层，第一非金属层具有比基材折射率大的折射率并且第二非金属层具有比基材折射率小的折射率，其中将第一非金属层置于第二非金属层与基材之间。此公知的抗反射涂层将环境光残余反射降低到0.5-1％，而裸基材为4-5％。此两层抗反射涂层的缺点在于反射光有显眼的颜色而非所要求的灰色。
例如SPIE(Washington,USA,2004)出版的P.W.Baumeister "Optical CoatingTechnology"，第1.3.1.3章节第1-14页中描述的基材上的另一种公知的抗反射涂层包括具有一组交替具有高折射率和低折射率的层(不少于四层)。此公知的抗反射涂层将环境光残余反射降低到0.1-0.5％，而裸基材为4-5％。此四层抗反射涂层的缺点是由于多层沉积以及调整困难导致制造成本相对较高。
美国专利4,327,967中公开了可见光范围面板中的热(红外线范围)反射但是高度透明。此面板包括沉积在玻璃基材上且折射率大于2的一个非金属层、沉积在此非金属层上的金层和覆盖金层用于反射颜色中和的其他金属薄层。此面板的缺点是可见光范围中相对较高的反射(>8％)。
发明内容
本发明的目的是一种在基材上提供的抗反射涂层，其以所要求的灰色提供对于可见光低至0.1-0.5％的环境光残余反射。
在按所要求的灰色提供低环境光残余反射的同时，本发明的另一个目的是要将组成抗反射涂层的层数减到最小(不多于三层)，由此确保低成本。
根据本发明的第一实施例，针对可见光的这些目的是通过基材上的抗反射涂层来实现，该基材上的抗反射涂层包括厚度范围从2至5纳米的一个金属层以及折射率范围从1.3至1.6和厚度范围从40至80纳米的一个非金属层，其中将该金属层置于非金属层与基材之间。
根据本发明的第二实施例，针对可见光的这些目的是通过基材上的抗反射涂层来实现，该基材上的抗反射涂层包括厚度范围从2至12纳米的一个金属层、折射率不超过1.7且厚度范围从30至100纳米的第一非金属层以及折射率大于1.7且厚度范围从10至50纳米的第二非金属层，且第二与第一非金属层的折射率之差不小于0.3，其中将第二非金属层置于基材上，将金属层置于第二非金属层上，且将第一非金属层置于金属层上。
附图简述
本发明通过附图来阐明，这些附图不完全涵盖且不限制本发明的技术方案的整个权利要求范围，而仅是图示该抗反射涂层的一些实施例。
图1示出抗反射涂层的第一实施例，该抗反射涂层由折射率不大于1.6的一个非金属层和厚度范围从2至5纳米且置于非金属层与基材之间的一个金属层组成。
图2示出根据图1的抗反射涂层的环境可见光反射光谱。
图3示出抗反射涂层的第二实施例，该抗反射涂层由折射率不大于1.7的第一非金属层和折射率大于1.7的第二非金属层以及一个金属层组成，其中将第二非金属层置于基材上，将金属层置于第二非金属层上，将第一非金属层置于金属层上。
图4示出根据图3的抗反射涂层的环境可见光反射光谱。
具体实施方式
在图1中，示出针对可见光的基材上的抗反射涂层3的第一实施例，其包括厚度范围从2至5纳米的一个金属层1以及折射率范围从1.3至1.6和厚度范围从40至80纳米的一个非金属层2，其中将该金属层1置于非金属层2与基材3之间。
抗反射涂层按如下工作。环境白光4进入抗反射涂层并从如下每个介面反射：“空气-非金属层2”、“非金属层2-金属层1”、“金属层1-基材3”。由于反射光的相消干涉，在非金属层1的某个适合选择的厚度和折射率下以及金属的光学特性及其厚度下，反射光5的总强度是非常低的。
优选地，金属层由选自如下组成的组的金属制成：金Au、银Ag、铝Al、铜Cu、铬Cr、钛Ti、镍Ni、锰Mn、钼Mo、铋Bi、锡Sn、铑Rh、铂Pt、锑Sb以及所提到的物质的任何合金或固溶体。为了更好地粘合到基材3和所提到的非金属层2，金属层1可以包括附加的从属层，该附加的从属层厚度不大于1纳米且由选自包括如下的组的材料制成：铬Cr、钛Ti、镍Ni、钒V、锆Zr、铪Hf、铌Nb、钼Mo以及所提到的物质的任何混合物、合金或固溶体。
金属层1的厚度取决于使用了哪种金属以及非金属层2的厚度和折射率，并且其范围是从2至5纳米。低于2纳米的金属厚度对可见光反射没有显著影响，相比之下仅非金属层有显著影响。高于5纳米的金属层增加“蓝色”和“红色”波长范围下的可见光反射，并且因此增加了可见白光的总反射；还生成非期望的反射光显眼颜色。
使用如下多种公知方法将金属层1沉积在基材3上：热蒸镀、电子束蒸镀、粉化沉积、离子束沉积、阴极粉化沉积、辅助以等离子的气相化学沉积等。
非金属层2由选自包括如下的组的物质制成：镁、钙、钡、铝、镧氟化物MgF2、CaF2、AlF3、LaF3、SiO2以及所提到的物质的任何混合物、合金或固溶体。还使用由丙烯酸聚合物和含氟聚合物组成的有机聚合物组。使用折射率不超过1.6且本文未提及的其他材料是可能的。
非金属层2的厚度取决于非金属物质的类型，主要取决于其折射率以及金属层1的厚度和类型，并且其范围是从40至80纳米。使用如下公知方法来沉积非金属层2：热蒸镀、电子束蒸镀、通过离子束粉化沉积、阴极粉化沉积、辅助以等离子的气相化学沉积等。还使用湿法涂覆方法。
基材3(显示器或其他装置的外表面)由介电材料制成，例如由玻璃或聚合物制成。
在图2中，示出根据图1的抗反射涂层的环境可见光反射光谱。明显地见到，白光的残余反射不超过0.35％，且具有大部分灰色(由于可见光谱范围内的均匀反射)。
在图3中，示出本发明的第二实施例。这种针对可见光的基材上的抗反射涂层3包括厚度范围从2至12纳米的一个金属层1、折射率不超过1.7且厚度范围从30至100纳米的第一非金属层2以及折射率大于1.7且厚度范围从10至50纳米的第二非金属层6，且第二与第一非金属层的折射率之差不小于0.3，其中将第二非金属层6置于基材3上，将金属层1置于第二非金属层6上，以及将第一非金属层2置于金属层1上。
抗反射涂层按如下工作。环境白光4进入抗反射涂层并从如下每个介面反射：“空气-非金属层2”、“非金属层2-金属层1”、“金属层1-第二非金属层6”、“第二非金属层6-基材3”。由于反射光的相消干涉，在适合选择金属和非金属材料以及非金属层2和6的厚度和折射率的情况下，反射光5的总强度是非常低的。
优选地，金属层由选自包括如下的组的材料制成：金Au、银Ag、铝Al、铜Cu、铬Cr、钛Ti、镍Ni、锰Mn、钼Mo、铋Bi、锡Sn、铑Rh、铂Pt、锑Sb以及所提到的物质的任何混合物、合金或固溶体或金属间化合物。为了更好地粘合到所提及的非金属层6和所提到的非金属层2，金属层1可以包括附加的从属层，该附加的从属层厚度不大于1纳米且由选自包括如下的组的材料制成：铬Cr、钛Ti、镍Ni、钒V、锆Zr、铪Hf、铌Nb、钼Mo以及所提到的物质的任何混合物、合金、固溶体或金属间化合物。
金属层1的厚度取决于金属的种类和非金属层2和6的厚度和折射率，并且其范围是从2至12纳米。低于2纳米的金属厚度对可见光反射没有显著影响，相比之下仅非金属层有显著影响。高于12纳米的金属层增加“蓝色”和“红色”波长范围下的可见光反射，并且因此增加了可见白光的总反射；还生成非期望的反射光显眼颜色。
公知有多种方法用于将金属层1沉积在非金属层6上：磁控溅射、热蒸镀、电子束蒸镀、粉化沉积、离子束沉积、阴极粉化沉积、(等离子强化的)化学气相沉积等。
公知有多种方法用于沉积非金属层2和6：磁控溅射、热蒸镀、电子束蒸镀、溶胶凝胶、(等离子强化的)化学气相沉积等。
折射率不超过1.7的非金属层2由选自包括如下的组的材料制成：镁、钙、钡、铝、镧氟化物MgF2、CaF2、BaF2、AlF3、LaF3、氧化硅SiO2以及所提到的物质的任何混合物、合金或固溶体，以及包括由丙烯酸聚合物和含氟聚合物组成的有机聚合物组。还使用由丙烯酸聚合物和含氟聚合物组成的有机聚合物组。使用折射率不超过1.7且本文未提及的其他材料是可能的。
非金属层2的厚度取决于非金属物质的种类，主要取决于其折射率和厚度以及取决于金属层1的种类，并且其范围是从30至100纳米。折射率大于1.7的第二非金属层6由选自包括如下的组的材料制成：蓝宝石Al2O3、二氧化钛TiO2、硫化锌ZnS、五氧化二钽Ta2O5、硒化锌ZnSe、磷化镓GaP、氮化镓GaN、铟锡氧化物ITO、五氧化二铌Nb2O5、钼酸铅PbMoO4、氮化硼BN、氮化硅Si3N4、氮化铝AlN、硅Si、锗Ge、硒Se、半导体A3B5型、半导体A2B6型、半导体A5B6型(砷、锑和铋硫属化合物)以及所提到的物质的任何混合物或固溶体。
非金属层6的厚度取决于层2和6的非金属材料的种类，主要取决于其折射率和厚度以及取决于金属层1的厚度和种类，并且其范围是从10至50纳米。
第二和第一非金属层的折射率之差不小于0.3。低于0.3的差值增加了“蓝色”和“红色”波长范围下的可见光反射，且因此增加可见白光的总反射；还生成非期望的反射光显眼颜色。
基材(显示器或其他装置的外表面)由介电材料制成，例如由玻璃或聚合物制成。
在图4中，示出根据图3的抗反射涂层的环境可见光反射光谱。明显地见到，白光的残余反射不超过0.2％，且具有分灰色(由于可见光谱范围内的均匀反射)。
本文描述的抗反射涂层的叠加属性所确保的技术效果是：在所要求的灰色下环境光残余反射低至0.1-0.5％。再有，抗反射涂层由不多于三层组成，因此确保了低成本。
此效果通过最优平衡非金属层的厚度、其折射率和金属层的厚度来实现。
Claims (9)
1.一种针对可见光的基材上的抗反射涂层，由以下层组成：
厚度范围从2至5纳米的一个金属层；以及
折射率范围从1.3至1.6且厚度范围从40至80纳米的一个非金属层，
其中所述金属层被置于所述非金属层与所述基材之间。
2.如权利要求1所述的抗反射涂层，其中所述金属层由选自包括如下项的组的材料制成：金Au、银Ag、铝Al、铬Cr、钛Ti、镍Ni、锰Mn、钼Mo、铋Bi、锡Sn以及所提到的物质的任何混合物、合金、固溶体或金属间化合物。
3.如权利要求2所述的抗反射涂层，其中所述金属层包括附加的从属层，其总厚度不超过1纳米且由选自包括如下项的组的金属制成：铬Cr、钛Ti、镍Ni、钒V、锆Zr、铪Hf、铌Nb、钼Mo以及所提到的物质的任何混合物、合金或固溶体。
4.如权利要求1所述的抗反射涂层，其中所提到的非金属层由选自包括如下项的组的材料制成：MgF2、CaF2、BaF2、SiO2、AlF2、LaF3以及所提到的物质的任何混合物或固溶体，以及由丙烯酸聚合物和含氟聚合物组成的有机聚合物组。
5.一种针对可见光的基材上的抗反射涂层，由以下层组成：
厚度范围从2至12纳米的一个金属层；以及
折射率不超过1.7且厚度范围从30至100纳米的第一非金属层；以及
折射率大于1.7且厚度范围从10至50纳米的第二非金属层，
第二和第一非金属层的折射率之差不小于0.3，
其中将第二非金属层置于所述基材上，将所述金属层置于第二非金属层上，且将第一非金属层置于所述金属层上。
6.如权利要求5所述的抗反射涂层，其中所述金属层由选自包括如下项的组的材料制成：金Au、银Ag、铝Al、铬Cr、钛Ti、镍Ni、锰Mn、钼Mo、铋Bi、锡Sn以及所提到的物质的任何混合物、合金、固溶体或金属间化合物。
7.如权利要求6所述的抗反射涂层，其中所述金属层包括附加的从属层，其总厚度不超过1纳米且由选自包括如下项的组的金属制成：铬Cr、钛Ti、镍Ni、钒V、锆Zr、铪Hf、铌Nb、钼Mo以及所提到的物质的任何混合物、合金或固溶体。
8.如权利要求5所述的抗反射涂层，其中所述第一非金属层由选自包括如下项的组的材料制成：MgF2、CaF2、BaF2、SiO2、AlF3、LaF3以及所提到的物质的任何混合物或固溶体，以及由丙烯酸聚合物和含氟聚合物组成的有机聚合物组。
9.如权利要求5所述的抗反射涂层，其中所提到的第二非金属层由选自包括如下项的组的材料制成：二氧化钛TiO2，硫化锌ZnS，五氧化二钽Ta2O5，硒化锌ZnSe，磷化镓GaP，铟锡氧化物ITO，氮化镓GaN，五氧化二铌Nb2O5，钼酸铅PbMoO4，氮化硼BN，氮化硅Si3N4，氮化铝AlN，硅Si，锗Ge，硒Se，半导体A3B5型砷、锑和铋硫属化合物，半导体A2B6型砷、锑和铋硫属化合物，半导体A5B6型砷、锑和铋硫属化合物以及所提到的物质的任何混合物或固溶体。
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| US201315089207A | 2013-03-01 | 2013-03-01 | |
| US15/089,207 | 2013-03-01 | ||
| PCT/US2014/018578 WO2014134124A1 (en) | 2013-03-01 | 2014-02-26 | Anti-reflective coating |
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| CN108196334A (zh) * | 2018-01-05 | 2018-06-22 | 京东方科技集团股份有限公司 | 一种偏光片及其制备方法、显示装置 |
| KR20210072864A (ko) | 2019-12-09 | 2021-06-18 | 현대자동차주식회사 | 적외선용 무반사 렌즈 |
| CN113320248A (zh) * | 2021-07-04 | 2021-08-31 | 北京载诚科技有限公司 | 显示薄膜及显示组件 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6764580B2 (en) * | 2001-11-15 | 2004-07-20 | Chungwa Picture Tubes, Ltd. | Application of multi-layer antistatic/antireflective coating to video display screen by sputtering |
| US7199046B2 (en) * | 2003-11-14 | 2007-04-03 | Tokyo Electron Ltd. | Structure comprising tunable anti-reflective coating and method of forming thereof |
| US8355418B2 (en) * | 2009-09-17 | 2013-01-15 | Soraa, Inc. | Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates |
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| US5744227A (en) * | 1995-04-03 | 1998-04-28 | Southwall Technologies Inc. | Antireflective coatings comprising a lubricating layer having a specific surface energy |
| US7994600B2 (en) * | 2005-12-21 | 2011-08-09 | Texas Instruments Incorporated | Antireflective coating |
-
2014
- 2014-02-26 KR KR1020157027026A patent/KR20150126885A/ko not_active Application Discontinuation
- 2014-02-26 JP JP2015560272A patent/JP2016528516A/ja active Pending
- 2014-02-26 EP EP14756263.1A patent/EP2961602A1/en not_active Withdrawn
- 2014-02-26 CN CN201480024025.3A patent/CN105163939B/zh not_active Expired - Fee Related
- 2014-02-26 AU AU2014223560A patent/AU2014223560A1/en not_active Abandoned
- 2014-02-26 WO PCT/US2014/018578 patent/WO2014134124A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6764580B2 (en) * | 2001-11-15 | 2004-07-20 | Chungwa Picture Tubes, Ltd. | Application of multi-layer antistatic/antireflective coating to video display screen by sputtering |
| US7199046B2 (en) * | 2003-11-14 | 2007-04-03 | Tokyo Electron Ltd. | Structure comprising tunable anti-reflective coating and method of forming thereof |
| US8355418B2 (en) * | 2009-09-17 | 2013-01-15 | Soraa, Inc. | Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2016528516A (ja) | 2016-09-15 |
| CN105163939A (zh) | 2015-12-16 |
| EP2961602A1 (en) | 2016-01-06 |
| AU2014223560A1 (en) | 2015-10-29 |
| KR20150126885A (ko) | 2015-11-13 |
| WO2014134124A1 (en) | 2014-09-04 |
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