JP4534978B2 - 半導体薄膜製造装置 - Google Patents
半導体薄膜製造装置 Download PDFInfo
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- JP4534978B2 JP4534978B2 JP2005368173A JP2005368173A JP4534978B2 JP 4534978 B2 JP4534978 B2 JP 4534978B2 JP 2005368173 A JP2005368173 A JP 2005368173A JP 2005368173 A JP2005368173 A JP 2005368173A JP 4534978 B2 JP4534978 B2 JP 4534978B2
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- 239000010409 thin film Substances 0.000 title claims description 58
- 239000004065 semiconductor Substances 0.000 title claims description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000007789 gas Substances 0.000 claims description 99
- 239000000758 substrate Substances 0.000 claims description 90
- 238000004891 communication Methods 0.000 claims description 17
- 239000011148 porous material Substances 0.000 claims description 14
- 238000009434 installation Methods 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 9
- 239000012159 carrier gas Substances 0.000 claims description 6
- 238000011144 upstream manufacturing Methods 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 35
- 229910010271 silicon carbide Inorganic materials 0.000 description 35
- 239000002994 raw material Substances 0.000 description 19
- 239000012535 impurity Substances 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 7
- 239000011810 insulating material Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 4
- 238000000427 thin-film deposition Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011491 glass wool Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
前記基板の結晶成長面の法線と鉛直下方向とのなす角度が180°未満となるように、前記基板が設置される。
前記貫通細孔を流通させる流通ガスとしては、前記反応管に供給するキャリアガスを用いる。
図1に示す半導体薄膜製造装置を用い、基板へのSiCエピタキシャル薄膜の形成を行った。なお、基板の保持形態としては、反応管12を断面図で示す図4に示すように、保持具50で仮止めした状態で、貫通細孔30(細孔径:8mm)に流通ガス(水素ガス:100sccm)を流通させて設置する形態とした。また、連通部の径は8mmであった。
貫通細孔が図3に示すベンチェリー構造となっている以外は、実施例1と同様のサセプタを具備する半導体薄膜製造装置を用いて基板へのSiCエピタキシャル薄膜形成を行った。なお、θ1、θ2、θ3およびθ4は、それぞれ8°とした。貫通細孔の両端の細孔径は8mmであった。そのほか成長条件と結果は下記表1の通りである。下記表1から、上部基板への落下物は無かった。基板裏面への薄膜堆積も無かった。また、面内均一性も良好であった。
反応管を断面図で示す図5に示すように、保持具で基板を固定した状態とし、貫通細孔を有しない構成とした以外は、図1に示す半導体薄膜製造装置を用い、基板へのSiCエピタキシャル薄膜の形成を行った。使用した基板などの条件は、実施例1と同様である。そのほかの主な成長条件と結果は下記表1の通りである。下記表1から、上部基板への落下物は無かったが、基板裏面への薄膜堆積があった。また、面内均一性も実施例に比べ低いものであった。
12・・・反応管
12A・・・反応室
14・・・RFコイル
16・・・原料供給管
18・・・ガス供給管
16A,18A,18B・・・MFC
20・・・サセプタ
20A・・・設置部
22A,22B・・・基板
24・・・排出管
26・・・断熱材
28・・・搬送トレイ
30・・・貫通細孔
32・・・連通部
Claims (2)
- 反応管と、該反応管内に配置されるサセプタと、該サセプタ上に配置された基板に負圧をかけてこれを保持する負圧発生手段と、を備え、
前記基板の結晶成長面の法線と鉛直下方向とのなす角度が180°未満となるように、前記基板が設置され、
前記負圧発生手段として、前記サセプタを貫通する貫通細孔が設けられ、かつ、前記貫通細孔の一部と前記基板の設置部との間を連通する連通部が設けられており、前記貫通細孔を通じて流通ガスを流通させることで、前記連通部に負圧を生じさせて前記基板を保持し、
前記貫通細孔を流通させる流通ガスとして、前記反応管に供給するキャリアガスを用いることを特徴とする半導体薄膜製造装置。 - 前記貫通細孔が、前記流通ガスの流通方向上流側から前記連通部に向かって縮径し、前記連通部から流通ガスの流通方向下流側に向かって拡径するベンチェリー構造となっていることを特徴とする請求項1に記載の半導体薄膜製造装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005368173A JP4534978B2 (ja) | 2005-12-21 | 2005-12-21 | 半導体薄膜製造装置 |
US12/097,882 US20090229519A1 (en) | 2005-12-21 | 2006-12-20 | Apparatus for manufacturing semiconductor thin film |
DE112006003485T DE112006003485T5 (de) | 2005-12-21 | 2006-12-20 | Vorrichtung zum Herstellen einer Halbleiterdünnschicht |
PCT/JP2006/325372 WO2007072855A1 (ja) | 2005-12-21 | 2006-12-20 | 半導体薄膜製造装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005368173A JP4534978B2 (ja) | 2005-12-21 | 2005-12-21 | 半導体薄膜製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007173467A JP2007173467A (ja) | 2007-07-05 |
JP4534978B2 true JP4534978B2 (ja) | 2010-09-01 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005368173A Expired - Fee Related JP4534978B2 (ja) | 2005-12-21 | 2005-12-21 | 半導体薄膜製造装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20090229519A1 (ja) |
JP (1) | JP4534978B2 (ja) |
DE (1) | DE112006003485T5 (ja) |
WO (1) | WO2007072855A1 (ja) |
Cited By (1)
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---|---|---|---|---|
DE102017201744A1 (de) | 2016-04-27 | 2017-11-02 | Mitsubishi Electric Corporation | Verfahren zum Herstellen eines Siliziumkarbid-Epitaxialwafers, Verfahren zum Herstellen einer Siliziumkarbid-Halbleiteranordnung und Vorrichtung zum Herstellen eines Siliziumkarbid-Epitaxialwafers |
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WO2007072855A1 (ja) | 2007-06-28 |
DE112006003485T5 (de) | 2009-02-26 |
JP2007173467A (ja) | 2007-07-05 |
US20090229519A1 (en) | 2009-09-17 |
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