JP5514429B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP5514429B2
JP5514429B2 JP2008300991A JP2008300991A JP5514429B2 JP 5514429 B2 JP5514429 B2 JP 5514429B2 JP 2008300991 A JP2008300991 A JP 2008300991A JP 2008300991 A JP2008300991 A JP 2008300991A JP 5514429 B2 JP5514429 B2 JP 5514429B2
Authority
JP
Japan
Prior art keywords
film
semiconductor device
semiconductor
layer
reinforcing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008300991A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009158936A5 (enExample
JP2009158936A (ja
Inventor
舜平 山崎
裕吾 後藤
努 村川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008300991A priority Critical patent/JP5514429B2/ja
Publication of JP2009158936A publication Critical patent/JP2009158936A/ja
Publication of JP2009158936A5 publication Critical patent/JP2009158936A5/ja
Application granted granted Critical
Publication of JP5514429B2 publication Critical patent/JP5514429B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2008300991A 2007-12-03 2008-11-26 半導体装置 Expired - Fee Related JP5514429B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008300991A JP5514429B2 (ja) 2007-12-03 2008-11-26 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007312163 2007-12-03
JP2007312163 2007-12-03
JP2008300991A JP5514429B2 (ja) 2007-12-03 2008-11-26 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013241842A Division JP5719910B2 (ja) 2007-12-03 2013-11-22 半導体装置

Publications (3)

Publication Number Publication Date
JP2009158936A JP2009158936A (ja) 2009-07-16
JP2009158936A5 JP2009158936A5 (enExample) 2011-12-22
JP5514429B2 true JP5514429B2 (ja) 2014-06-04

Family

ID=40427859

Family Applications (11)

Application Number Title Priority Date Filing Date
JP2008300991A Expired - Fee Related JP5514429B2 (ja) 2007-12-03 2008-11-26 半導体装置
JP2013241842A Active JP5719910B2 (ja) 2007-12-03 2013-11-22 半導体装置
JP2015059043A Active JP5770402B2 (ja) 2007-12-03 2015-03-23 半導体装置
JP2015126684A Withdrawn JP2015201663A (ja) 2007-12-03 2015-06-24 半導体装置
JP2017084231A Expired - Fee Related JP6379250B2 (ja) 2007-12-03 2017-04-21 半導体装置
JP2018142349A Expired - Fee Related JP6657333B2 (ja) 2007-12-03 2018-07-30 半導体装置
JP2020017741A Active JP6968214B2 (ja) 2007-12-03 2020-02-05 半導体装置
JP2021174349A Active JP7250882B2 (ja) 2007-12-03 2021-10-26 半導体装置、電子機器
JP2023045405A Active JP7471488B2 (ja) 2007-12-03 2023-03-22 半導体装置
JP2024062730A Active JP7660741B2 (ja) 2007-12-03 2024-04-09 半導体装置
JP2025060511A Pending JP2025096323A (ja) 2007-12-03 2025-04-01 半導体装置

Family Applications After (10)

Application Number Title Priority Date Filing Date
JP2013241842A Active JP5719910B2 (ja) 2007-12-03 2013-11-22 半導体装置
JP2015059043A Active JP5770402B2 (ja) 2007-12-03 2015-03-23 半導体装置
JP2015126684A Withdrawn JP2015201663A (ja) 2007-12-03 2015-06-24 半導体装置
JP2017084231A Expired - Fee Related JP6379250B2 (ja) 2007-12-03 2017-04-21 半導体装置
JP2018142349A Expired - Fee Related JP6657333B2 (ja) 2007-12-03 2018-07-30 半導体装置
JP2020017741A Active JP6968214B2 (ja) 2007-12-03 2020-02-05 半導体装置
JP2021174349A Active JP7250882B2 (ja) 2007-12-03 2021-10-26 半導体装置、電子機器
JP2023045405A Active JP7471488B2 (ja) 2007-12-03 2023-03-22 半導体装置
JP2024062730A Active JP7660741B2 (ja) 2007-12-03 2024-04-09 半導体装置
JP2025060511A Pending JP2025096323A (ja) 2007-12-03 2025-04-01 半導体装置

Country Status (6)

Country Link
US (2) US8047442B2 (enExample)
EP (1) EP2071627B1 (enExample)
JP (11) JP5514429B2 (enExample)
KR (2) KR101720512B1 (enExample)
CN (2) CN101452962B (enExample)
TW (1) TWI459542B (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8325047B2 (en) * 2009-04-08 2012-12-04 Sabic Innovative Plastics Ip B.V. Encapsulated RFID tags and methods of making same
WO2011125454A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI539597B (zh) * 2011-01-26 2016-06-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8946066B2 (en) 2011-05-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US8679905B2 (en) * 2011-06-08 2014-03-25 Cbrite Inc. Metal oxide TFT with improved source/drain contacts
US9431545B2 (en) * 2011-09-23 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6022880B2 (ja) * 2011-10-07 2016-11-09 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP5912394B2 (ja) 2011-10-13 2016-04-27 株式会社半導体エネルギー研究所 半導体装置
US9018629B2 (en) 2011-10-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8637864B2 (en) 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP6026839B2 (ja) 2011-10-13 2016-11-16 株式会社半導体エネルギー研究所 半導体装置
KR20140060776A (ko) * 2012-11-12 2014-05-21 삼성디스플레이 주식회사 플렉서블 표시 장치 및 그 제조 방법
JP2014138179A (ja) * 2013-01-18 2014-07-28 Nippon Hoso Kyokai <Nhk> 薄膜トランジスタアレイ基板及び表示装置
US9577107B2 (en) 2013-03-19 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and method for forming oxide semiconductor film
WO2014189493A1 (en) 2013-05-21 2014-11-27 Halliburton Energy Services, Inc. Thermal securing set screws
JP6345023B2 (ja) * 2013-08-07 2018-06-20 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
CN106105388B (zh) 2014-03-06 2018-07-31 株式会社半导体能源研究所 发光装置
CN206727211U (zh) * 2014-03-28 2017-12-08 株式会社村田制作所 天线装置以及通信设备
JP6468686B2 (ja) 2014-04-25 2019-02-13 株式会社半導体エネルギー研究所 入出力装置
JP2016081051A (ja) 2014-10-10 2016-05-16 株式会社半導体エネルギー研究所 機能パネル、装置、情報処理装置
KR102367251B1 (ko) * 2015-02-02 2022-02-25 삼성디스플레이 주식회사 표시 장치
US9772268B2 (en) 2015-03-30 2017-09-26 International Business Machines Corporation Predicting semiconductor package warpage
WO2017013538A1 (ja) 2015-07-23 2017-01-26 株式会社半導体エネルギー研究所 表示装置、モジュール、及び電子機器
CN107134496B (zh) * 2016-02-29 2019-05-31 昆山工研院新型平板显示技术中心有限公司 薄膜晶体管及其制造方法、显示面板及显示装置
KR102537297B1 (ko) * 2016-07-05 2023-05-30 삼성디스플레이 주식회사 롤러블 표시 장치 및 이를 포함하는 전자 기기
JP7086582B2 (ja) * 2017-12-11 2022-06-20 株式会社ジャパンディスプレイ 表示装置
CN110299369B (zh) * 2019-07-03 2021-11-16 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置
US12408414B2 (en) * 2021-07-14 2025-09-02 Micron Technology, Inc. Transistor and memory circuitry comprising strings of memory cells
CN116131094B (zh) * 2021-11-12 2025-12-05 朗美通日本株式会社 光学半导体器件

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5812353A (ja) * 1981-07-15 1983-01-24 Matsushita Electric Ind Co Ltd 半導体装置
JPS63162007A (ja) 1986-12-26 1988-07-05 Osaka Pref Gov 浄水処理に於ける薬注制御方法
JPH0415002A (ja) 1990-05-07 1992-01-20 Matsushita Electric Ind Co Ltd 毛髪乾燥機
KR100294026B1 (ko) * 1993-06-24 2001-09-17 야마자끼 순페이 전기광학장치
US6867432B1 (en) * 1994-06-09 2005-03-15 Semiconductor Energy Lab Semiconductor device having SiOxNy gate insulating film
GB9521855D0 (en) * 1995-10-25 1996-01-03 Philips Electronics Nv Manufacture of electronic devices comprising thin-film circuitry
JP4143144B2 (ja) * 1997-06-20 2008-09-03 シャープ株式会社 薄膜トランジスタの製造方法
JP2001060693A (ja) * 2000-01-01 2001-03-06 Semiconductor Energy Lab Co Ltd アクティブマトリクス型表示装置
JP2001326178A (ja) * 2000-03-08 2001-11-22 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2002094078A (ja) * 2000-06-28 2002-03-29 Semiconductor Energy Lab Co Ltd 半導体装置
GB0108309D0 (en) * 2001-04-03 2001-05-23 Koninkl Philips Electronics Nv Matrix array devices with flexible substrates
JP4302357B2 (ja) * 2001-04-06 2009-07-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4831885B2 (ja) 2001-04-27 2011-12-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100944886B1 (ko) * 2001-10-30 2010-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제조 방법
JP2003152086A (ja) * 2001-11-15 2003-05-23 Semiconductor Energy Lab Co Ltd 半導体装置
JP4627135B2 (ja) 2001-12-28 2011-02-09 株式会社半導体エネルギー研究所 半導体装置の生産方法
JP3881248B2 (ja) * 2002-01-17 2007-02-14 株式会社日立製作所 液晶表示装置および画像表示装置
JP4526773B2 (ja) * 2002-03-26 2010-08-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4230159B2 (ja) * 2002-03-26 2009-02-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003330388A (ja) * 2002-05-15 2003-11-19 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
EP1363319B1 (en) * 2002-05-17 2009-01-07 Semiconductor Energy Laboratory Co., Ltd. Method of transferring an object and method of manufacturing a semiconductor device
JP2004047975A (ja) * 2002-05-17 2004-02-12 Semiconductor Energy Lab Co Ltd 積層体の転写方法及び半導体装置の作製方法
JP4052631B2 (ja) * 2002-05-17 2008-02-27 株式会社東芝 アクティブマトリクス型表示装置
US7605023B2 (en) * 2002-08-29 2009-10-20 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for a semiconductor device and heat treatment method therefor
JP4403354B2 (ja) 2002-09-11 2010-01-27 ソニー株式会社 薄膜回路基板
JP2004151546A (ja) * 2002-10-31 2004-05-27 Sharp Corp アクティブマトリクス基板および表示装置
KR100528326B1 (ko) * 2002-12-31 2005-11-15 삼성전자주식회사 가요성 기판 상에 보호캡을 구비하는 박막 반도체 소자 및 이를 이용하는 전자장치 및 그 제조방법
JP4566578B2 (ja) 2003-02-24 2010-10-20 株式会社半導体エネルギー研究所 薄膜集積回路の作製方法
JP4748943B2 (ja) 2003-02-28 2011-08-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI276017B (en) * 2003-04-23 2007-03-11 Kuo-Ping Yang Automatic and interactive system for computer teaching aid
JP4102246B2 (ja) * 2003-04-28 2008-06-18 株式会社東芝 半導体装置及びその製造方法
JP2004109988A (ja) * 2003-08-29 2004-04-08 Seiko Epson Corp 電気光学装置及び電子機器
JP3923458B2 (ja) * 2003-09-10 2007-05-30 株式会社半導体エネルギー研究所 半導体装置
US7768405B2 (en) * 2003-12-12 2010-08-03 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and manufacturing method thereof
JP2005259865A (ja) * 2004-03-10 2005-09-22 Seiko Epson Corp 半導体装置、半導体装置の製造方法、電気光学装置
US7211825B2 (en) * 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP4963163B2 (ja) * 2004-06-16 2012-06-27 株式会社半導体エネルギー研究所 レーザ処理装置及び半導体装置の作製方法
JP4942959B2 (ja) * 2004-07-30 2012-05-30 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法
KR101102261B1 (ko) * 2004-09-15 2012-01-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US7843010B2 (en) * 2004-09-30 2010-11-30 Sharp Kabushiki Kaisha Crystalline semiconductor film and method for manufacturing the same
JP5072210B2 (ja) * 2004-10-05 2012-11-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2006232449A (ja) 2005-02-23 2006-09-07 Tanaka Shikan Kk Ｉｃタグ付き紙管
JP5046529B2 (ja) * 2005-02-25 2012-10-10 株式会社半導体エネルギー研究所 半導体装置
US7619288B2 (en) * 2005-05-27 2009-11-17 Sharp Kabushiki Kaisha Thin film transistor substrate, liquid crystal display device provided with such thin film transistor substrate and method for manufacturing thin film transistor substrate
JP3970891B2 (ja) 2005-06-06 2007-09-05 株式会社半導体エネルギー研究所 半導体装置
JP4316558B2 (ja) * 2005-06-28 2009-08-19 三星モバイルディスプレイ株式會社 有機発光表示装置
US7576359B2 (en) * 2005-08-12 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
JP5027470B2 (ja) * 2005-09-29 2012-09-19 株式会社半導体エネルギー研究所 記憶装置
EP1770610A3 (en) * 2005-09-29 2010-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2007123377A (ja) * 2005-10-26 2007-05-17 Matsushita Electric Ind Co Ltd 有機半導体素子モジュール
JP5151025B2 (ja) 2005-11-30 2013-02-27 パナソニック株式会社 フレキシブル回路基板
WO2007086163A1 (ja) * 2006-01-25 2007-08-02 Sharp Kabushiki Kaisha 半導体装置の製造方法、及び、半導体装置
JP5145672B2 (ja) * 2006-02-27 2013-02-20 富士通セミコンダクター株式会社 半導体装置の製造方法
JP2007258691A (ja) * 2006-02-21 2007-10-04 Semiconductor Energy Lab Co Ltd レーザ照射装置、レーザ照射方法、及び半導体装置の作製方法
JP5132169B2 (ja) * 2006-03-31 2013-01-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2007288078A (ja) * 2006-04-20 2007-11-01 Seiko Epson Corp フレキシブル電子デバイス及びその製造方法
JP2007312163A (ja) 2006-05-19 2007-11-29 Aruze Corp オーディオ用増幅装置
JP3958349B2 (ja) * 2006-12-05 2007-08-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4918391B2 (ja) * 2007-04-16 2012-04-18 オンセミコンダクター・トレーディング・リミテッド 半導体装置

Also Published As

Publication number Publication date
CN103985763B (zh) 2018-02-06
US20090140053A1 (en) 2009-06-04
JP2017147462A (ja) 2017-08-24
KR101720512B1 (ko) 2017-03-28
JP7250882B2 (ja) 2023-04-03
JP6657333B2 (ja) 2020-03-04
JP7660741B2 (ja) 2025-04-11
JP2023073320A (ja) 2023-05-25
JP2015111744A (ja) 2015-06-18
JP2018195843A (ja) 2018-12-06
JP2020074478A (ja) 2020-05-14
CN103985763A (zh) 2014-08-13
KR101693543B1 (ko) 2017-01-06
JP5719910B2 (ja) 2015-05-20
US8047442B2 (en) 2011-11-01
EP2071627B1 (en) 2014-06-11
EP2071627A2 (en) 2009-06-17
CN101452962B (zh) 2014-06-18
KR20160023740A (ko) 2016-03-03
EP2071627A3 (en) 2012-11-28
US20120037993A1 (en) 2012-02-16
JP2025096323A (ja) 2025-06-26
JP6968214B2 (ja) 2021-11-17
KR20090057932A (ko) 2009-06-08
JP2022009486A (ja) 2022-01-14
JP2015201663A (ja) 2015-11-12
JP2014075594A (ja) 2014-04-24
JP2009158936A (ja) 2009-07-16
JP5770402B2 (ja) 2015-08-26
CN101452962A (zh) 2009-06-10
JP2024091705A (ja) 2024-07-05
TW200943540A (en) 2009-10-16
JP7471488B2 (ja) 2024-04-19
JP6379250B2 (ja) 2018-08-22
US8272575B2 (en) 2012-09-25
TWI459542B (zh) 2014-11-01

Similar Documents

Publication Publication Date Title
JP7250882B2 (ja) 半導体装置、電子機器
JP5703362B2 (ja) 半導体装置
JP5046529B2 (ja) 半導体装置
US8232556B2 (en) Semiconductor device
JP5350616B2 (ja) 半導体装置
JP5121479B2 (ja) 無線システム

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111102

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20111102

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130604

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130709

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131029

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140325

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140331

R150 Certificate of patent or registration of utility model

Ref document number: 5514429

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees