JP5121479B2 - 無線システム - Google Patents
無線システム Download PDFInfo
- Publication number
- JP5121479B2 JP5121479B2 JP2008022212A JP2008022212A JP5121479B2 JP 5121479 B2 JP5121479 B2 JP 5121479B2 JP 2008022212 A JP2008022212 A JP 2008022212A JP 2008022212 A JP2008022212 A JP 2008022212A JP 5121479 B2 JP5121479 B2 JP 5121479B2
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- JP
- Japan
- Prior art keywords
- data
- processing
- semiconductor device
- film
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- 239000000758 substrate Substances 0.000 description 55
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 229910052581 Si3N4 Inorganic materials 0.000 description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 18
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 11
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
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- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 8
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 7
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 6
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- 239000004593 Epoxy Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 239000004952 Polyamide Substances 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
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- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
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- 229910052779 Neodymium Inorganic materials 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
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- 125000001424 substituent group Chemical group 0.000 description 3
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910004283 SiO 4 Inorganic materials 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
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- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 2
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- 229910017052 cobalt Inorganic materials 0.000 description 2
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- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
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- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
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- 150000004767 nitrides Chemical class 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
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- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
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- 125000000217 alkyl group Chemical group 0.000 description 1
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- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
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- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
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- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
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- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
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- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
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- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B7/00—Radio transmission systems, i.e. using radiation field
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/0723—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
Landscapes
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Signal Processing (AREA)
- Hardware Redundancy (AREA)
- Semiconductor Integrated Circuits (AREA)
- Dc Digital Transmission (AREA)
- Detection And Prevention Of Errors In Transmission (AREA)
Description
(実施の形態1)
(実施の形態2)
(実施の形態3)
(実施の形態4)
(実施の形態5)
102 通信装置
103 半導体装置
104A 第1の無線信号
104B 第2の無線信号
105 機能回路
106 機能回路
107 機能回路
108 機能回路
109 コントローラ
110 送受信回路
111 送受信回路
112 演算処理回路
113 電算処理部
114 被処理データ
115 多数決処理データ
151 サーバ
152 インターフェース
201 通信信号波形
202 通信信号波形
203 期間
204 期間
205 期間
206 期間
207 期間
208 期間
209 期間
210 期間
211 期間
212 期間
301 無線システム
302 通信装置
303 半導体装置
304 半導体装置
305 半導体装置
306 半導体装置
307A 第1の無線信号
307B 第2の無線信号
308 機能回路
309 機能回路
310 機能回路
311 機能回路
312 コントローラ
313 コントローラ
314 コントローラ
315 コントローラ
316 送受信回路
317 送受信回路
318 送受信回路
319 送受信回路
320 送受信回路
321 演算処理回路
323 被処理データ
324 多数決処理データ
350 電算処理部
401 通信信号波形
402 通信信号波形
403 期間
404 期間
405 期間
406 期間
407 期間
408 期間
409 期間
410 期間
411 期間
412 期間
501 データ入力
502 不良データ除去
503 第1の比較判定
504 第2の比較判定
505 多数決判定
506 第1の不良データ抽出
507 第2の不良データ抽出
508 第1のデータ抽出
509 第2のデータ抽出
510 第3のデータ抽出
511 第4のデータ抽出
1901 基板
1902 絶縁膜
1903 剥離層
1904 絶縁膜
1905 半導体膜
1905a 半導体膜
1905b 半導体膜
1905c 半導体膜
1905d 半導体膜
1905e 半導体膜
1905f 半導体膜
1906 ゲート絶縁膜
1907 ゲート電極
1907a 導電膜
1907b 導電膜
1908 不純物領域
1909 不純物領域
1910 絶縁膜
1911 不純物領域
1912a 絶縁膜
1912b 絶縁膜
1913 導電膜
1914 絶縁膜
1915a 導電膜
1915b 導電膜
1916a 導電膜
1916b 導電膜
1917a 導電膜
1917b 導電膜
1918 絶縁膜
1919 素子形成層
1920 第1のシート材料
1921 第2のシート材料
2300 半導体基板
2301 素子分離用絶縁膜
2302 素子形成領域
2303 素子形成領域
2304 pウェル
2305 絶縁膜
2306 絶縁膜
2307 導電膜
2308 導電膜
2309 ゲート電極
2310 ゲート電極
2311 マスク
2312 不純物領域
2313 チャネル形成領域
2314 マスク
2315 不純物領域
2316 チャネル形成領域
2317 絶縁膜
2318 導電膜
2324 層間膜
2325 配線
2326 導電膜
3001 ラベル台紙
3002 半導体装置
3003 ICラベル
3004 ボックス
3011 ICラベル
3012 半導体装置
3021 ICカード
3022 半導体装置
3031 無記名債券
3032 半導体装置
1900a 薄膜トランジスタ
1900b 薄膜トランジスタ
1900c 薄膜トランジスタ
1900d 薄膜トランジスタ
1900e 薄膜トランジスタ
1900f 薄膜トランジスタ
Claims (5)
- 同一の機能を有する複数の機能回路を具備し、前記複数の機能回路における各々の処理結果を、前記複数の機能回路各々の処理データとして、時系列のシリアルデータに変換し、前記シリアルデータにしたがって、振幅を変化させた無線信号を送信する半導体装置と、
演算処理回路を具備し、前記無線信号を受信する通信装置と、を備え、
前記無線信号は、時分割で送信される信号であり、
前記演算処理回路は、前記複数の機能回路各々の処理データを多数決処理する機能を有する回路であることを特徴とする無線システム。 - 同一の機能を有する複数の機能回路、及び第1の送受信回路を具備する半導体装置と、
演算処理回路及び第2の送受信回路を具備する通信装置と、を備え、
前記第1の送受信回路は、前記複数の機能回路における各々の処理結果を、前記複数の機能回路各々の処理データとして、時系列のシリアルデータに変換し、前記シリアルデータにしたがって、振幅を変化させた無線信号を、前記第2の送受信回路に送信する機能を有し、
前記無線信号は、時分割で送信される信号であり、
前記第2の送受信回路は、前記第1の送受信回路より送信される前記無線信号から前記複数の機能回路各々の処理データを生成する機能を有し、
前記演算処理回路は、前記複数の機能回路各々の処理データの内容を比較し、最も多数を占める内容を正常の内容として選ぶ第1の多数決処理を行う機能と、前記第1の多数決処理によって誤りであると判定された処理データを除去した後、第2の多数決処理を行う機能と、を有する無線システム。 - 機能回路及び第1の送受信回路を具備する複数の半導体装置と、
演算処理回路及び第2の送受信回路を具備する通信回路と、を備え、
前記第2の送受信回路は、被処理データを、前記複数の半導体装置に送信する際に、前記被処理データを、データ送信が開始される旨を伝達するスタート信号と、前記複数の半導体装置の内部クロックを同期させる同期信号と、が付加された時系列のシリアルデータに変換する機能を有し、
前記複数の半導体装置は、少なくとも1つのコマンドに対し、同一の応答をする機能と、前記複数の半導体装置各々の処理データを時系列で順に前記通信装置に送信する機能と、を有し、
前記演算処理回路は、前記複数の半導体装置各々の処理データの内容を比較し、最も多数を占める内容を正常の内容として選ぶ第1の多数決処理を行う機能と、前記第1の多数決処理によって誤りであると判定された処理データを除去した後、第2の多数決処理を行う機能と、を有する無線システム。 - 請求項1乃至3のいずれか一において、
前記通信装置は、電算処理部を具備する無線システム。 - 請求項1乃至4のいずれか一において、
前記演算処理回路は、前記通信装置の外部に設けられたサーバと接続されている無線システム。
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EP1956523B1 (en) * | 2007-02-02 | 2013-05-29 | Semiconductor Energy Laboratory Co., Ltd. | Wireless identification system, semiconductor device, and communication device |
JP5301299B2 (ja) * | 2008-01-31 | 2013-09-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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KR101460979B1 (ko) | 2014-11-13 |
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