KR101720512B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101720512B1
KR101720512B1 KR1020080121844A KR20080121844A KR101720512B1 KR 101720512 B1 KR101720512 B1 KR 101720512B1 KR 1020080121844 A KR1020080121844 A KR 1020080121844A KR 20080121844 A KR20080121844 A KR 20080121844A KR 101720512 B1 KR101720512 B1 KR 101720512B1
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KR
South Korea
Prior art keywords
film
island
semiconductor
shaped
insulating film
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Expired - Fee Related
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KR1020080121844A
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English (en)
Korean (ko)
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KR20090057932A (ko
Inventor
순페이 야마자키
유우고 고토
추토무 무라카와
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20090057932A publication Critical patent/KR20090057932A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020080121844A 2007-12-03 2008-12-03 반도체 장치 Expired - Fee Related KR101720512B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007312163 2007-12-03
JPJP-P-2007-312163 2007-12-03

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020160015068A Division KR101693543B1 (ko) 2007-12-03 2016-02-05 반도체 장치

Publications (2)

Publication Number Publication Date
KR20090057932A KR20090057932A (ko) 2009-06-08
KR101720512B1 true KR101720512B1 (ko) 2017-03-28

Family

ID=40427859

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020080121844A Expired - Fee Related KR101720512B1 (ko) 2007-12-03 2008-12-03 반도체 장치
KR1020160015068A Expired - Fee Related KR101693543B1 (ko) 2007-12-03 2016-02-05 반도체 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020160015068A Expired - Fee Related KR101693543B1 (ko) 2007-12-03 2016-02-05 반도체 장치

Country Status (6)

Country Link
US (2) US8047442B2 (enExample)
EP (1) EP2071627B1 (enExample)
JP (11) JP5514429B2 (enExample)
KR (2) KR101720512B1 (enExample)
CN (2) CN101452962B (enExample)
TW (1) TWI459542B (enExample)

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US8946066B2 (en) 2011-05-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US8679905B2 (en) * 2011-06-08 2014-03-25 Cbrite Inc. Metal oxide TFT with improved source/drain contacts
US9431545B2 (en) * 2011-09-23 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6022880B2 (ja) * 2011-10-07 2016-11-09 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP5912394B2 (ja) 2011-10-13 2016-04-27 株式会社半導体エネルギー研究所 半導体装置
US9018629B2 (en) 2011-10-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8637864B2 (en) 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP6026839B2 (ja) 2011-10-13 2016-11-16 株式会社半導体エネルギー研究所 半導体装置
KR20140060776A (ko) * 2012-11-12 2014-05-21 삼성디스플레이 주식회사 플렉서블 표시 장치 및 그 제조 방법
JP2014138179A (ja) * 2013-01-18 2014-07-28 Nippon Hoso Kyokai <Nhk> 薄膜トランジスタアレイ基板及び表示装置
US9577107B2 (en) 2013-03-19 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and method for forming oxide semiconductor film
WO2014189493A1 (en) 2013-05-21 2014-11-27 Halliburton Energy Services, Inc. Thermal securing set screws
JP6345023B2 (ja) * 2013-08-07 2018-06-20 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
CN106105388B (zh) 2014-03-06 2018-07-31 株式会社半导体能源研究所 发光装置
CN206727211U (zh) * 2014-03-28 2017-12-08 株式会社村田制作所 天线装置以及通信设备
JP6468686B2 (ja) 2014-04-25 2019-02-13 株式会社半導体エネルギー研究所 入出力装置
JP2016081051A (ja) 2014-10-10 2016-05-16 株式会社半導体エネルギー研究所 機能パネル、装置、情報処理装置
KR102367251B1 (ko) * 2015-02-02 2022-02-25 삼성디스플레이 주식회사 표시 장치
US9772268B2 (en) 2015-03-30 2017-09-26 International Business Machines Corporation Predicting semiconductor package warpage
WO2017013538A1 (ja) 2015-07-23 2017-01-26 株式会社半導体エネルギー研究所 表示装置、モジュール、及び電子機器
CN107134496B (zh) * 2016-02-29 2019-05-31 昆山工研院新型平板显示技术中心有限公司 薄膜晶体管及其制造方法、显示面板及显示装置
KR102537297B1 (ko) * 2016-07-05 2023-05-30 삼성디스플레이 주식회사 롤러블 표시 장치 및 이를 포함하는 전자 기기
JP7086582B2 (ja) * 2017-12-11 2022-06-20 株式会社ジャパンディスプレイ 表示装置
CN110299369B (zh) * 2019-07-03 2021-11-16 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置
US12408414B2 (en) * 2021-07-14 2025-09-02 Micron Technology, Inc. Transistor and memory circuitry comprising strings of memory cells
CN116131094B (zh) * 2021-11-12 2025-12-05 朗美通日本株式会社 光学半导体器件

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Also Published As

Publication number Publication date
CN103985763B (zh) 2018-02-06
US20090140053A1 (en) 2009-06-04
JP2017147462A (ja) 2017-08-24
JP7250882B2 (ja) 2023-04-03
JP6657333B2 (ja) 2020-03-04
JP7660741B2 (ja) 2025-04-11
JP2023073320A (ja) 2023-05-25
JP2015111744A (ja) 2015-06-18
JP2018195843A (ja) 2018-12-06
JP2020074478A (ja) 2020-05-14
JP5514429B2 (ja) 2014-06-04
CN103985763A (zh) 2014-08-13
KR101693543B1 (ko) 2017-01-06
JP5719910B2 (ja) 2015-05-20
US8047442B2 (en) 2011-11-01
EP2071627B1 (en) 2014-06-11
EP2071627A2 (en) 2009-06-17
CN101452962B (zh) 2014-06-18
KR20160023740A (ko) 2016-03-03
EP2071627A3 (en) 2012-11-28
US20120037993A1 (en) 2012-02-16
JP2025096323A (ja) 2025-06-26
JP6968214B2 (ja) 2021-11-17
KR20090057932A (ko) 2009-06-08
JP2022009486A (ja) 2022-01-14
JP2015201663A (ja) 2015-11-12
JP2014075594A (ja) 2014-04-24
JP2009158936A (ja) 2009-07-16
JP5770402B2 (ja) 2015-08-26
CN101452962A (zh) 2009-06-10
JP2024091705A (ja) 2024-07-05
TW200943540A (en) 2009-10-16
JP7471488B2 (ja) 2024-04-19
JP6379250B2 (ja) 2018-08-22
US8272575B2 (en) 2012-09-25
TWI459542B (zh) 2014-11-01

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