JP5507178B2 - 半導体集積回路装置およびその製造方法 - Google Patents

半導体集積回路装置およびその製造方法 Download PDF

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Publication number
JP5507178B2
JP5507178B2 JP2009221238A JP2009221238A JP5507178B2 JP 5507178 B2 JP5507178 B2 JP 5507178B2 JP 2009221238 A JP2009221238 A JP 2009221238A JP 2009221238 A JP2009221238 A JP 2009221238A JP 5507178 B2 JP5507178 B2 JP 5507178B2
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JP
Japan
Prior art keywords
insulating film
film
wiring layer
fuse element
integrated circuit
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Active
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JP2009221238A
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English (en)
Japanese (ja)
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JP2011071324A (ja
JP2011071324A5 (https=
Inventor
志昌 南
勝 秋野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
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Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP2009221238A priority Critical patent/JP5507178B2/ja
Priority to TW099130322A priority patent/TWI555162B/zh
Priority to KR1020100090888A priority patent/KR101663836B1/ko
Priority to CN201010290650.6A priority patent/CN102034791B/zh
Priority to US12/888,183 priority patent/US8324708B2/en
Publication of JP2011071324A publication Critical patent/JP2011071324A/ja
Publication of JP2011071324A5 publication Critical patent/JP2011071324A5/ja
Application granted granted Critical
Publication of JP5507178B2 publication Critical patent/JP5507178B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive
    • H10W20/494—Fuses, i.e. interconnections changeable from conductive to non-conductive changeable by the use of an external beam, e.g. laser beam or ion beam

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2009221238A 2009-09-25 2009-09-25 半導体集積回路装置およびその製造方法 Active JP5507178B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009221238A JP5507178B2 (ja) 2009-09-25 2009-09-25 半導体集積回路装置およびその製造方法
TW099130322A TWI555162B (zh) 2009-09-25 2010-09-08 半導體積體電路裝置及其製造方法
KR1020100090888A KR101663836B1 (ko) 2009-09-25 2010-09-16 반도체 집적 회로 장치 및 그 제조 방법
CN201010290650.6A CN102034791B (zh) 2009-09-25 2010-09-21 半导体集成电路装置及其制造方法
US12/888,183 US8324708B2 (en) 2009-09-25 2010-09-22 Semiconductor integrated circuit device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009221238A JP5507178B2 (ja) 2009-09-25 2009-09-25 半導体集積回路装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2011071324A JP2011071324A (ja) 2011-04-07
JP2011071324A5 JP2011071324A5 (https=) 2012-08-30
JP5507178B2 true JP5507178B2 (ja) 2014-05-28

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ID=43779359

Family Applications (1)

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JP2009221238A Active JP5507178B2 (ja) 2009-09-25 2009-09-25 半導体集積回路装置およびその製造方法

Country Status (5)

Country Link
US (1) US8324708B2 (https=)
JP (1) JP5507178B2 (https=)
KR (1) KR101663836B1 (https=)
CN (1) CN102034791B (https=)
TW (1) TWI555162B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5981260B2 (ja) * 2011-09-30 2016-08-31 エスアイアイ・セミコンダクタ株式会社 半導体装置
US9818691B2 (en) * 2015-03-12 2017-11-14 Sii Semiconductor Corporation Semiconductor device having a fuse element
US9917055B2 (en) * 2015-03-12 2018-03-13 Sii Semiconductor Corporation Semiconductor device having fuse element
JP6620024B2 (ja) * 2015-03-12 2019-12-11 エイブリック株式会社 半導体装置
JP6620023B2 (ja) * 2015-03-12 2019-12-11 エイブリック株式会社 半導体装置およびその製造方法
JP7158160B2 (ja) * 2018-03-05 2022-10-21 エイブリック株式会社 半導体装置
JP6803595B1 (ja) * 2020-09-16 2020-12-23 アルディーテック株式会社 半導体発光素子チップ集積装置およびその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03171758A (ja) * 1989-11-30 1991-07-25 Nec Corp 半導体装置及びその製造方法
JPH0521605A (ja) * 1991-07-12 1993-01-29 Sony Corp 半導体装置
JPH0722508A (ja) * 1993-06-24 1995-01-24 Hitachi Ltd 半導体集積回路装置
JPH0737988A (ja) * 1993-07-20 1995-02-07 Hitachi Ltd 半導体集積回路装置の製造方法
JP3147149B2 (ja) * 1997-02-07 2001-03-19 日本電気株式会社 半導体装置及びその製造方法
US6589712B1 (en) * 1998-11-04 2003-07-08 Yi-Ren Hsu Method for forming a passivation layer using polyimide layer as a mask
JP2002050692A (ja) * 2000-08-01 2002-02-15 Nec Corp 半導体装置およびその製造方法
CN100501973C (zh) * 2005-03-30 2009-06-17 雅马哈株式会社 适合半导体器件的熔丝断开方法
JP2010118427A (ja) * 2008-11-12 2010-05-27 Nec Electronics Corp 半導体装置および半導体装置の製造方法

Also Published As

Publication number Publication date
KR20110033785A (ko) 2011-03-31
JP2011071324A (ja) 2011-04-07
TW201125098A (en) 2011-07-16
CN102034791A (zh) 2011-04-27
US8324708B2 (en) 2012-12-04
US20110073986A1 (en) 2011-03-31
CN102034791B (zh) 2016-02-24
KR101663836B1 (ko) 2016-10-14
TWI555162B (zh) 2016-10-21

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