JP5474400B2 - 半導体用濡れ剤、それを用いた研磨用組成物および研磨方法 - Google Patents

半導体用濡れ剤、それを用いた研磨用組成物および研磨方法 Download PDF

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Publication number
JP5474400B2
JP5474400B2 JP2009106530A JP2009106530A JP5474400B2 JP 5474400 B2 JP5474400 B2 JP 5474400B2 JP 2009106530 A JP2009106530 A JP 2009106530A JP 2009106530 A JP2009106530 A JP 2009106530A JP 5474400 B2 JP5474400 B2 JP 5474400B2
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Japan
Prior art keywords
water
polymer compound
polishing
less
soluble polymer
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JP2009106530A
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English (en)
Japanese (ja)
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JP2010034509A (ja
JP2010034509A5 (https=
Inventor
永 均 森
橋 修 平 高
出 匠 学 井
尾 智 宏 今
原 直 幸 石
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Fujimi Inc
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Fujimi Inc
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Priority to JP2009106530A priority Critical patent/JP5474400B2/ja
Priority to TW098121187A priority patent/TWI532801B/zh
Priority to US12/496,314 priority patent/US8632693B2/en
Priority to DE102009031356.7A priority patent/DE102009031356B4/de
Priority to KR1020090059984A priority patent/KR101594619B1/ko
Publication of JP2010034509A publication Critical patent/JP2010034509A/ja
Publication of JP2010034509A5 publication Critical patent/JP2010034509A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2009106530A 2008-07-03 2009-04-24 半導体用濡れ剤、それを用いた研磨用組成物および研磨方法 Active JP5474400B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009106530A JP5474400B2 (ja) 2008-07-03 2009-04-24 半導体用濡れ剤、それを用いた研磨用組成物および研磨方法
TW098121187A TWI532801B (zh) 2008-07-03 2009-06-24 A semiconductor wetting agent, a polishing composition thereof, and a polishing method
US12/496,314 US8632693B2 (en) 2008-07-03 2009-07-01 Wetting agent for semiconductors, and polishing composition and polishing method employing it
DE102009031356.7A DE102009031356B4 (de) 2008-07-03 2009-07-01 Herstellung eines Benetzungsmittels für Halbleiter, Herstellung einer Polierzusammensetzung und sie verwendendes Polierverfahren
KR1020090059984A KR101594619B1 (ko) 2008-07-03 2009-07-02 반도체용 습윤제, 연마용 조성물 및 이를 사용한 연마 방법, 연마용 조성물 농축물, 반도체용 습윤제 농축물

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008174683 2008-07-03
JP2008174683 2008-07-03
JP2009106530A JP5474400B2 (ja) 2008-07-03 2009-04-24 半導体用濡れ剤、それを用いた研磨用組成物および研磨方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011264947A Division JP5575735B2 (ja) 2008-07-03 2011-12-02 研磨用組成物濃縮物

Publications (3)

Publication Number Publication Date
JP2010034509A JP2010034509A (ja) 2010-02-12
JP2010034509A5 JP2010034509A5 (https=) 2012-01-26
JP5474400B2 true JP5474400B2 (ja) 2014-04-16

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JP2009106530A Active JP5474400B2 (ja) 2008-07-03 2009-04-24 半導体用濡れ剤、それを用いた研磨用組成物および研磨方法

Country Status (5)

Country Link
US (1) US8632693B2 (https=)
JP (1) JP5474400B2 (https=)
KR (1) KR101594619B1 (https=)
DE (1) DE102009031356B4 (https=)
TW (1) TWI532801B (https=)

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KR101983868B1 (ko) 2011-10-24 2019-05-29 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물, 그것을 사용한 연마 방법 및 기판의 제조 방법
TWI650408B (zh) * 2012-01-16 2019-02-11 日商福吉米股份有限公司 研磨用組成物，其製造方法，矽基板之製造方法及矽基板
TWI582184B (zh) * 2012-01-16 2017-05-11 福吉米股份有限公司 研磨用組成物、其製造方法、稀釋用原液、矽基板之製造方法、及矽基板
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JP2014080461A (ja) * 2012-10-12 2014-05-08 Fujimi Inc 研磨用組成物の製造方法及び研磨用組成物
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JP6292816B2 (ja) * 2013-10-18 2018-03-14 東亞合成株式会社 半導体用濡れ剤及び研磨用組成物
JP6266337B2 (ja) * 2013-12-25 2018-01-24 ニッタ・ハース株式会社 半導体基板用濡れ剤及び研磨用組成物
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JP6314019B2 (ja) 2014-03-31 2018-04-18 ニッタ・ハース株式会社 半導体基板の研磨方法
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JP2014239228A (ja) * 2014-06-27 2014-12-18 日立化成株式会社 Ｃｍｐ研磨液
JP6206360B2 (ja) * 2014-08-29 2017-10-04 株式会社Sumco シリコンウェーハの研磨方法
US10748778B2 (en) 2015-02-12 2020-08-18 Fujimi Incorporated Method for polishing silicon wafer and surface treatment composition
EP3258483A4 (en) 2015-02-12 2018-02-28 Fujimi Incorporated Method for polishing silicon wafer and surface treatment composition
EP3546542A4 (en) 2016-11-22 2020-07-22 Fujimi Incorporated POLISHING COMPOSITION
US20180301852A1 (en) * 2017-04-18 2018-10-18 Maria Galkowski Power-saving outlet
JP6690606B2 (ja) 2017-07-14 2020-04-28 信越半導体株式会社 研磨方法
KR20200111488A (ko) 2019-03-19 2020-09-29 케이피엑스케미칼 주식회사 반도체 연마용 린스 조성물
JP6884898B1 (ja) 2020-01-22 2021-06-09 日本酢ビ・ポバール株式会社 研磨用組成物
JP6761554B1 (ja) 2020-01-22 2020-09-23 日本酢ビ・ポバール株式会社 研磨用組成物
JP7531320B2 (ja) * 2020-06-11 2024-08-09 株式会社フジミインコーポレーテッド ヒドロキシエチルセルロース溶液の製造方法、該製造方法により製造されたヒドロキシエチルセルロース溶液、および該ヒドロキシエチルセルロース溶液を含む半導体用濡れ剤ならびに研磨用組成物
JP7720137B2 (ja) * 2020-09-30 2025-08-07 株式会社フジミインコーポレーテッド ポリビニルアルコール組成物を含む半導体用濡れ剤の製造方法
JP7603441B2 (ja) 2020-12-23 2024-12-20 ニッタ・デュポン株式会社 研磨用組成物及びシリコンウェーハの研磨方法
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Publication number Priority date Publication date Assignee Title
WO2020196369A1 (ja) 2019-03-26 2020-10-01 株式会社フジミインコーポレーテッド 研磨用組成物
KR20210143847A (ko) 2019-03-26 2021-11-29 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물

Also Published As

Publication number Publication date
US8632693B2 (en) 2014-01-21
TWI532801B (zh) 2016-05-11
DE102009031356B4 (de) 2021-05-06
KR101594619B1 (ko) 2016-02-16
JP2010034509A (ja) 2010-02-12
TW201012885A (en) 2010-04-01
DE102009031356A1 (de) 2010-01-21
US20100003821A1 (en) 2010-01-07
KR20100004874A (ko) 2010-01-13

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