TWI532801B - A semiconductor wetting agent, a polishing composition thereof, and a polishing method - Google Patents
A semiconductor wetting agent, a polishing composition thereof, and a polishing method Download PDFInfo
- Publication number
- TWI532801B TWI532801B TW098121187A TW98121187A TWI532801B TW I532801 B TWI532801 B TW I532801B TW 098121187 A TW098121187 A TW 098121187A TW 98121187 A TW98121187 A TW 98121187A TW I532801 B TWI532801 B TW I532801B
- Authority
- TW
- Taiwan
- Prior art keywords
- water
- polymer compound
- soluble polymer
- polishing
- less
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/12—Preparing bulk and homogeneous wafers
- H10P90/129—Preparing bulk and homogeneous wafers by polishing
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008174683 | 2008-07-03 | ||
| JP2009106530A JP5474400B2 (ja) | 2008-07-03 | 2009-04-24 | 半導体用濡れ剤、それを用いた研磨用組成物および研磨方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201012885A TW201012885A (en) | 2010-04-01 |
| TWI532801B true TWI532801B (zh) | 2016-05-11 |
Family
ID=41427484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098121187A TWI532801B (zh) | 2008-07-03 | 2009-06-24 | A semiconductor wetting agent, a polishing composition thereof, and a polishing method |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8632693B2 (https=) |
| JP (1) | JP5474400B2 (https=) |
| KR (1) | KR101594619B1 (https=) |
| DE (1) | DE102009031356B4 (https=) |
| TW (1) | TWI532801B (https=) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010140671A1 (ja) | 2009-06-05 | 2010-12-09 | 株式会社Sumco | シリコンウェーハの研磨方法及びシリコンウェーハ |
| JP2013004910A (ja) * | 2011-06-21 | 2013-01-07 | Disco Abrasive Syst Ltd | 埋め込み銅電極を有するウエーハの加工方法 |
| KR101983868B1 (ko) | 2011-10-24 | 2019-05-29 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물, 그것을 사용한 연마 방법 및 기판의 제조 방법 |
| TWI650408B (zh) * | 2012-01-16 | 2019-02-11 | 日商福吉米股份有限公司 | 研磨用組成物，其製造方法，矽基板之製造方法及矽基板 |
| TWI582184B (zh) * | 2012-01-16 | 2017-05-11 | 福吉米股份有限公司 | 研磨用組成物、其製造方法、稀釋用原液、矽基板之製造方法、及矽基板 |
| US9133366B2 (en) * | 2012-05-25 | 2015-09-15 | Nissan Chemical Industries, Ltd. | Polishing liquid composition for wafers |
| JP2014041978A (ja) * | 2012-08-23 | 2014-03-06 | Fujimi Inc | 研磨用組成物、研磨用組成物の製造方法、及び研磨用組成物原液の製造方法 |
| US8821215B2 (en) | 2012-09-07 | 2014-09-02 | Cabot Microelectronics Corporation | Polypyrrolidone polishing composition and method |
| JP2014080461A (ja) * | 2012-10-12 | 2014-05-08 | Fujimi Inc | 研磨用組成物の製造方法及び研磨用組成物 |
| EP2957613B1 (en) | 2013-02-13 | 2020-11-18 | Fujimi Incorporated | Polishing composition, method for producing polishing composition and method for producing polished article |
| JP6292816B2 (ja) * | 2013-10-18 | 2018-03-14 | 東亞合成株式会社 | 半導体用濡れ剤及び研磨用組成物 |
| JP6266337B2 (ja) * | 2013-12-25 | 2018-01-24 | ニッタ・ハース株式会社 | 半導体基板用濡れ剤及び研磨用組成物 |
| JP6343160B2 (ja) * | 2014-03-28 | 2018-06-13 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP6389629B2 (ja) | 2014-03-31 | 2018-09-12 | ニッタ・ハース株式会社 | 研磨用組成物 |
| JP6314019B2 (ja) | 2014-03-31 | 2018-04-18 | ニッタ・ハース株式会社 | 半導体基板の研磨方法 |
| JP6389630B2 (ja) | 2014-03-31 | 2018-09-12 | ニッタ・ハース株式会社 | 研磨用組成物 |
| JP2014239228A (ja) * | 2014-06-27 | 2014-12-18 | 日立化成株式会社 | Ｃｍｐ研磨液 |
| JP6206360B2 (ja) * | 2014-08-29 | 2017-10-04 | 株式会社Sumco | シリコンウェーハの研磨方法 |
| US10748778B2 (en) | 2015-02-12 | 2020-08-18 | Fujimi Incorporated | Method for polishing silicon wafer and surface treatment composition |
| EP3258483A4 (en) | 2015-02-12 | 2018-02-28 | Fujimi Incorporated | Method for polishing silicon wafer and surface treatment composition |
| EP3546542A4 (en) | 2016-11-22 | 2020-07-22 | Fujimi Incorporated | POLISHING COMPOSITION |
| US20180301852A1 (en) * | 2017-04-18 | 2018-10-18 | Maria Galkowski | Power-saving outlet |
| JP6690606B2 (ja) | 2017-07-14 | 2020-04-28 | 信越半導体株式会社 | 研磨方法 |
| KR20200111488A (ko) | 2019-03-19 | 2020-09-29 | 케이피엑스케미칼 주식회사 | 반도체 연마용 린스 조성물 |
| CN113631679B (zh) | 2019-03-26 | 2023-08-08 | 福吉米株式会社 | 研磨用组合物 |
| JP6884898B1 (ja) | 2020-01-22 | 2021-06-09 | 日本酢ビ・ポバール株式会社 | 研磨用組成物 |
| JP6761554B1 (ja) | 2020-01-22 | 2020-09-23 | 日本酢ビ・ポバール株式会社 | 研磨用組成物 |
| JP7531320B2 (ja) * | 2020-06-11 | 2024-08-09 | 株式会社フジミインコーポレーテッド | ヒドロキシエチルセルロース溶液の製造方法、該製造方法により製造されたヒドロキシエチルセルロース溶液、および該ヒドロキシエチルセルロース溶液を含む半導体用濡れ剤ならびに研磨用組成物 |
| JP7720137B2 (ja) * | 2020-09-30 | 2025-08-07 | 株式会社フジミインコーポレーテッド | ポリビニルアルコール組成物を含む半導体用濡れ剤の製造方法 |
| JP7603441B2 (ja) | 2020-12-23 | 2024-12-20 | ニッタ・デュポン株式会社 | 研磨用組成物及びシリコンウェーハの研磨方法 |
| EP4405428A4 (en) * | 2021-09-23 | 2025-07-30 | Cmc Mat Llc | SILICA-BASED SLURRY COMPOSITIONS CONTAINING HIGH MOLECULAR WEIGHT POLYMERS FOR USE IN CHEMICAL-MECHANICAL POLISHING OF DIELECTRICS |
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| US3715842A (en) | 1970-07-02 | 1973-02-13 | Tizon Chem Corp | Silica polishing compositions having a reduced tendency to scratch silicon and germanium surfaces |
| US4169337A (en) | 1978-03-30 | 1979-10-02 | Nalco Chemical Company | Process for polishing semi-conductor materials |
| US4462188A (en) | 1982-06-21 | 1984-07-31 | Nalco Chemical Company | Silica sol compositions for polishing silicon wafers |
| US4588421A (en) | 1984-10-15 | 1986-05-13 | Nalco Chemical Company | Aqueous silica compositions for polishing silicon wafers |
| US5352277A (en) | 1988-12-12 | 1994-10-04 | E. I. Du Pont De Nemours & Company | Final polishing composition |
| US5230833A (en) | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
| US5916819A (en) | 1996-07-17 | 1999-06-29 | Micron Technology, Inc. | Planarization fluid composition chelating agents and planarization method using same |
| US6099604A (en) | 1997-08-21 | 2000-08-08 | Micron Technology, Inc. | Slurry with chelating agent for chemical-mechanical polishing of a semiconductor wafer and methods related thereto |
| AU2080999A (en) | 1997-12-23 | 1999-07-12 | Akzo Nobel N.V. | A composition for chemical mechanical polishing |
| JP3810588B2 (ja) | 1998-06-22 | 2006-08-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US7208049B2 (en) * | 2003-10-20 | 2007-04-24 | Air Products And Chemicals, Inc. | Process solutions containing surfactants used as post-chemical mechanical planarization treatment |
| US6454820B2 (en) | 2000-02-03 | 2002-09-24 | Kao Corporation | Polishing composition |
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| JP4212861B2 (ja) * | 2002-09-30 | 2009-01-21 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いたシリコンウエハの研磨方法、並びにリンス用組成物及びそれを用いたシリコンウエハのリンス方法 |
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| KR100516886B1 (ko) | 2002-12-09 | 2005-09-23 | 제일모직주식회사 | 실리콘 웨이퍼의 최종 연마용 슬러리 조성물 |
| JP4668528B2 (ja) | 2003-09-05 | 2011-04-13 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP2005336705A (ja) | 2004-05-24 | 2005-12-08 | Matsushita Electric Works Ltd | 階段 |
| JP2006005246A (ja) * | 2004-06-18 | 2006-01-05 | Fujimi Inc | リンス用組成物及びそれを用いたリンス方法 |
| JP5026665B2 (ja) * | 2004-10-15 | 2012-09-12 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
| JP5121128B2 (ja) | 2005-06-20 | 2013-01-16 | ニッタ・ハース株式会社 | 半導体研磨用組成物 |
| KR101406487B1 (ko) * | 2006-10-06 | 2014-06-12 | 제이에스알 가부시끼가이샤 | 화학 기계 연마용 수계 분산체 및 반도체 장치의 화학 기계연마 방법 |
-
2009
- 2009-04-24 JP JP2009106530A patent/JP5474400B2/ja active Active
- 2009-06-24 TW TW098121187A patent/TWI532801B/zh active
- 2009-07-01 US US12/496,314 patent/US8632693B2/en active Active
- 2009-07-01 DE DE102009031356.7A patent/DE102009031356B4/de active Active
- 2009-07-02 KR KR1020090059984A patent/KR101594619B1/ko active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US8632693B2 (en) | 2014-01-21 |
| DE102009031356B4 (de) | 2021-05-06 |
| KR101594619B1 (ko) | 2016-02-16 |
| JP2010034509A (ja) | 2010-02-12 |
| TW201012885A (en) | 2010-04-01 |
| DE102009031356A1 (de) | 2010-01-21 |
| US20100003821A1 (en) | 2010-01-07 |
| JP5474400B2 (ja) | 2014-04-16 |
| KR20100004874A (ko) | 2010-01-13 |
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