WO2010140671A1 - シリコンウェーハの研磨方法及びシリコンウェーハ - Google Patents
シリコンウェーハの研磨方法及びシリコンウェーハ Download PDFInfo
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- WO2010140671A1 WO2010140671A1 PCT/JP2010/059487 JP2010059487W WO2010140671A1 WO 2010140671 A1 WO2010140671 A1 WO 2010140671A1 JP 2010059487 W JP2010059487 W JP 2010059487W WO 2010140671 A1 WO2010140671 A1 WO 2010140671A1
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- WIPO (PCT)
- Prior art keywords
- polishing
- silicon wafer
- abrasive grains
- wafer
- silicon
- Prior art date
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- 238000005498 polishing Methods 0.000 title claims abstract description 144
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 77
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 77
- 239000010703 silicon Substances 0.000 title claims abstract description 77
- 238000000034 method Methods 0.000 title claims abstract description 50
- 239000007788 liquid Substances 0.000 claims abstract description 44
- 239000006061 abrasive grain Substances 0.000 claims abstract description 40
- 230000007547 defect Effects 0.000 claims abstract description 29
- 239000002245 particle Substances 0.000 claims description 24
- 150000001875 compounds Chemical class 0.000 claims description 8
- 150000007514 bases Chemical class 0.000 claims description 7
- -1 nitrogen-containing basic compound Chemical class 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229920003169 water-soluble polymer Polymers 0.000 claims description 6
- 238000004438 BET method Methods 0.000 claims description 5
- 239000011164 primary particle Substances 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 3
- 239000001913 cellulose Substances 0.000 claims description 3
- 229920002678 cellulose Polymers 0.000 claims description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 3
- 239000000126 substance Substances 0.000 abstract description 13
- 235000012431 wafers Nutrition 0.000 description 88
- 238000011156 evaluation Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000003746 surface roughness Effects 0.000 description 6
- 238000001824 photoionisation detection Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 1
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 238000009841 combustion method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/959—Mechanical polishing of wafer
Definitions
- the present invention relates to a silicon wafer polishing method for polishing a surface of a silicon wafer by supplying a polishing liquid containing abrasive grains to the surface of the polishing pad and sliding the polishing pad relative to the silicon wafer. Is.
- polishing liquid used for polishing the surface of a silicon wafer conventionally, a solution in which silica particles as free abrasive grains are contained in an alkaline liquid has been widely used. Also, for polishing silicon wafers, chemical mechanical polishing (mechanochemical polishing) using a polishing liquid containing silica fine particles as abrasive grains is generally used. This polishing method uses mechanical polishing action by silica fine particles. It is known that a mirror surface having excellent smoothness and crystallinity can be obtained.
- the polishing liquid to be used contains many substances such as abrasive grains, alkalis, and polymers, so that polishing is performed. There is a problem that a defect due to adhesion of PID (process induced defect) or particles is newly generated due to the remaining of the substance on the surface of the cleaned silicon wafer.
- An object of the present invention is to polish a silicon wafer that can realize high flatness as in the conventional polishing method, and can further suppress the occurrence of defects due to the substance contained in the polishing liquid remaining on the wafer surface. It is to provide a method and a polished silicon wafer.
- the present inventors supply a polishing liquid containing abrasive grains to the surface of the polishing pad and polish the silicon wafer by polishing the surface of the silicon wafer by sliding the polishing pad relative to the silicon wafer.
- the defects due to adhesion of PID and particles are greatly suppressed. I found out that I can do it.
- a polishing liquid such as PID. It has been found that a polishing method capable of suppressing the occurrence of defects due to the substances to be obtained can be obtained.
- the gist of the present invention is as follows.
- a method for polishing a silicon wafer in which a polishing liquid containing abrasive grains is supplied to the surface of the polishing pad and the surface of the silicon wafer is polished by sliding the polishing pad relative to the silicon wafer.
- the method for polishing a silicon wafer wherein the number of abrasive grains contained in the polishing liquid is 5 ⁇ 10 13 particles / cm 3 or less.
- polishing liquid contains a basic compound and a water-soluble polymer compound.
- a high flatness can be realized, and furthermore, a silicon wafer polishing method and a polished silicon wafer that can suppress the occurrence of defects due to the substance contained in the polishing liquid remaining on the wafer surface. Offering became possible.
- the method for polishing a silicon wafer according to the present invention supplies a polishing liquid containing abrasive grains to the surface of the polishing pad, and polishes the surface of the silicon wafer by sliding the polishing pad relative to the silicon wafer.
- a silicon wafer polishing method supplies a polishing liquid containing abrasive grains to the surface of the polishing pad, and polishes the surface of the silicon wafer by sliding the polishing pad relative to the silicon wafer.
- the polishing method of the present invention is characterized in that the number of abrasive grains contained in the polishing liquid is 5 ⁇ 10 13 particles / cm 3 or less.
- the number of abrasive grains contained in the polishing liquid is 5 ⁇ 10 13 particles / cm 3 or less.
- the above-mentioned PID has a linear protrusion shape, and is a minute defect of nanometer order due to abrasive grains and other foreign matters contained in the polishing liquid. That is.
- the defect due to the adhesion of the polishing liquid-containing component is a micro defect generated when a fine particle component such as the abrasive grains adheres to the wafer surface, as shown in FIG.
- These defects are not defects that occur in the silicon single crystal pulling process, but are micro defects that are newly generated in the polishing process due to substances contained in the polishing liquid, and are also removed by wafer cleaning after polishing. Therefore, it is very important to suppress the occurrence in the polishing step as in the present invention.
- the number of abrasive grains is controlled to 5 ⁇ 10 13 particles / cm 3 or less when the number exceeds 5 ⁇ 10 13 particles / cm 3 . This is because it may cause the occurrence. Furthermore, if the number of abrasive grains is too small, the ability to polish the wafer surface decreases, so from the viewpoint of reliably improving the surface roughness of the wafer surface, the lower limit of the number of abrasive grains is 2 ⁇ 10 13 pieces / cm 3 or more is preferable.
- the abrasive grains preferably have an average primary particle size calculated based on the BET method (specific surface area measurement method) in the range of 10 to 70 nm. If the particle size is less than 10 nm, the abrasive grains aggregate to form coarse particles having a large particle size, which may cause PID. On the other hand, if the particle size exceeds 70 nm, the particle size is too large. This is because the roughness of the wafer surface after polishing may deteriorate. Furthermore, if the average primary particle diameter is in the range of 20 to 40 nm, it is more preferable because PID can be further reduced and deterioration of the roughness of the wafer surface after polishing can be prevented.
- the average primary particle diameter is in the range of 20 to 40 nm, it is more preferable because PID can be further reduced and deterioration of the roughness of the wafer surface after polishing can be prevented.
- the average primary particle size calculated based on the BET method is the BET method (adsorbed molecules on the surface of the powder particles are adsorbed at the temperature of liquid nitrogen, and the specific surface area of the sample is obtained from the amount. Method) refers to the value obtained by converting the specific surface area into the diameter of the spherical particles.
- the abrasive grains may be made of ceramics such as silica and alumina, simple substances such as diamond and silicon carbide or compounds such as high molecular polymers such as polyethylene and polypropylene, etc.
- SiO 2 is preferably contained.
- the type of SiO 2 for example, any of those produced by a dry method (combustion method / arc method) or a wet method (precipitation method / sol-gel method) can be used.
- the shape of the abrasive grains is mainly in the form of particles, but may be in the form of a gel as long as the above conditions (number of particles, average particle diameter, etc.) are satisfied.
- the polishing liquid is not particularly limited as long as it can polish the silicon wafer, but it is preferable to use a polishing liquid having a polishing rate for silicon of 5 nm / min or more.
- the mechanical polishing ability is low. It tends to decrease somewhat. Therefore, when the polishing rate is less than 5 nm / min, the polishing rate is too small, so that the surface of the wafer cannot be sufficiently polished and a desired surface roughness may not be obtained. .
- the polishing liquid preferably contains a basic compound from the viewpoint of effectively obtaining a chemical polishing action, and preferably contains a water-soluble polymer compound from the viewpoint of ensuring wettability of the wafer surface after polishing.
- the basic compound is a nitrogen-containing basic compound such as ammonia
- the water-soluble polymer compound is one of a cellulose derivative such as hydroxyethyl cellulose and polyvinyl alcohol.
- the silicon wafer surface is polished by sliding the polishing pad relative to the silicon wafer, but the sliding method is not particularly limited, It may be slid by moving only the polishing pad or only the silicon wafer, or may be slid by moving both the polishing pad and the silicon wafer relatively. Further, the pressure applied to the polishing pad, the relative sliding speed of the polishing pad, and / or the viscosity of the polishing liquid is not particularly limited, and polishing can be performed by performing arbitrary control.
- the polishing of the silicon wafer of the present invention is preferably performed as a finish polishing in the final polishing step of the silicon wafer manufacturing process.
- the final polishing in the final polishing step is the final polishing for finishing a silicon wafer as a product. If a defect occurs here, the subsequent defect cannot be removed. Therefore, according to the present invention, it is possible to obtain a high-quality silicon wafer as a result of suppressing the occurrence of defects such as PID.
- the measured value was:
- the number of wafers is 20 or less in terms of a 300 mm diameter wafer, and a high-quality wafer with few defects can be obtained. Further, when polishing is performed by a conventional polishing method, the flatness may be deteriorated, and therefore, it is preferable that the wafer is a large-diameter wafer having a diameter of 300 mm or more from the viewpoint that the effect of the present invention can be exhibited remarkably. .
- a polishing liquid containing abrasive grains is supplied to the surface of a polyurethane polishing pad, and the polishing pad is slid relative to the silicon wafer.
- the silicon wafer surface was polished by moving it.
- Table 1 shows the conditions of the polishing liquid used for polishing (polishing rate with respect to silicon, containing components) and the conditions of the abrasive grains (number, average particle diameter, type) in each of the samples for evaluation 1 to 6. Three wafers were prepared for each evaluation sample.
- Evaluation methods About each sample for evaluation produced above, (1) the number of PID and (2) the flatness of the wafer surface were evaluated. The evaluation is performed by preparing three evaluation samples and calculating the average value.
- the present invention similar to the conventional polishing method, high flatness can be realized, and furthermore, the polishing of a silicon wafer that can suppress the occurrence of defects due to the substance contained in the polishing liquid remaining on the wafer surface. It has become possible to provide a method and a polished silicon wafer.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
(1)研磨パッドの表面に砥粒を含有する研磨液を供給し、シリコンウェーハに対し前記研磨パッドを相対的に摺動させることで、シリコンウェーハの表面を研磨するシリコンウェーハの研磨方法であって、前記研磨液に含有する砥粒の数が5×1013個/cm3以下であることを特徴とするシリコンウェーハの研磨方法。
直径が300mmであるシリコンウェーハに対して、最終研磨工程の仕上げ研磨として、ポリウレタン製の研磨パッドの表面に砥粒を含有する研磨液を供給し、シリコンウェーハに対し前記研磨パッドを相対的に摺動させることで、シリコンウェーハ表面の研磨を行った。
評価用サンプル1~6の各サンプルにおける、研磨に用いられた研磨液の条件(シリコンに対する研磨レート、含有成分)及び砥粒の条件(数、平均粒径、種類)を、表1に示す。また、各評価用サンプルについて3枚のウェーハを作製した。
上記で作製した各評価用サンプルについて、(1)PIDの個数、及び(2)ウェーハ表面の平坦度について評価を行った。なお、評価については、3枚の評価用サンプルを用意し、平均値を算出することで評価を行っている。
各評価用サンプルについて、KLAテンコール社製の「Surfscan SP2」を用いてウェーハ表面上に存在するサイズが35nm以上の欠陥の個数を計測し、Surfscan SP2により検出される欠陥のうちLPD−Nに分類される欠陥をPIDとして、PID個数の計測を行った。得られたPIDの個数は、直径300mmウェーハ換算、すなわち直径300mmウェーハの表面上における個数とし、次の基準に従って、すなわち、個数が3個以下を○、個数が3個超え10個以下を△、個数が10個超えを×として、PID個数の評価を行った。この結果を、表1に示す。
また、各サンプルについての、研磨液中の砥粒の数と発生したPID欠陥の数との関係を示したグラフを図3に示す。
各サンプルについてKLAテンコール社製の「WaferSight」を用いて、ウェーハ表面の平坦度を計測し、次の基準に従って、すなわち、平坦度が60nm以下を○、平坦度が60nm超えを×として、ウェーハ表面の平坦度の評価を行った。この結果を、表1に示す。
Claims (9)
- 研磨パッドの表面に砥粒を含有する研磨液を供給し、シリコンウェーハに対し前記研磨パッドを相対的に摺動させることで、シリコンウェーハの表面を研磨するシリコンウェーハの研磨方法であって、
前記研磨液に含有する砥粒の数が、5×1013個/cm3以下であることを特徴とするシリコンウェーハの研磨方法。 - 前記砥粒は、BET法に基づいて算出された平均一次粒径が10~70nmの範囲である請求項1記載のシリコンウェーハの研磨方法。
- 前記砥粒は、SiO2を含有する請求項1又は2記載のシリコンウェーハの研磨方法。
- 前記研磨液は、シリコンに対する研磨レートが5nm/分以上である請求項1、2又は3記載のシリコンウェーハの研磨方法。
- 前記研磨液は、塩基性化合物及び水溶性高分子化合物を含有する請求項1~4のいずれか1項記載のシリコンウェーハの研磨方法。
- 前記塩基性化合物は、含窒素塩基性化合物の一種である請求項5記載のシリコンウェーハの研磨方法。
- 前記水溶性高分子化合物は、セルロース誘導体及びポリビニルアルコールのうちの少なくとも一種である請求項5記載のシリコンウェーハの研磨方法。
- 前記シリコンウェーハの研磨は、シリコンウェーハ製造プロセスの最終研磨工程中の仕上げ研磨として行われる請求項1~7のいずれか1項記載のシリコンウェーハの研磨方法。
- 請求項1~8のいずれか1項記載の方法により研磨されたウェーハであって、該ウェーハの研磨面の表面欠陥数は、パーティクルカウンタによる35nm以上のサイズの欠陥を測定した時の測定値が、直径300mmウェーハ換算で20個以下であるシリコンウェーハ。
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SG2011089042A SG176631A1 (en) | 2009-06-05 | 2010-05-28 | Method of polishing silicon wafer as well as silicon wafer |
KR1020117029117A KR101285120B1 (ko) | 2009-06-05 | 2010-05-28 | 실리콘 웨이퍼의 연마방법 및 실리콘 웨이퍼 |
JP2011518503A JP5310848B2 (ja) | 2009-06-05 | 2010-05-28 | シリコンウェーハの研磨方法及びシリコンウェーハ |
US13/376,259 US8877643B2 (en) | 2009-06-05 | 2010-05-28 | Method of polishing a silicon wafer |
DE112010002227.5T DE112010002227B4 (de) | 2009-06-05 | 2010-05-28 | Verfahren zum Polieren eines Siliciumwafers |
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DE (1) | DE112010002227B4 (ja) |
SG (1) | SG176631A1 (ja) |
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WO2019077687A1 (ja) * | 2017-10-17 | 2019-04-25 | 株式会社Sumco | シリコンウェーハの研磨方法 |
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US10748778B2 (en) | 2015-02-12 | 2020-08-18 | Fujimi Incorporated | Method for polishing silicon wafer and surface treatment composition |
KR20190106679A (ko) * | 2018-03-07 | 2019-09-18 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 |
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US9337013B2 (en) | 2011-06-20 | 2016-05-10 | Shin-Etsu Handotai Co., Ltd. | Silicon wafer and method for producing the same |
WO2019077687A1 (ja) * | 2017-10-17 | 2019-04-25 | 株式会社Sumco | シリコンウェーハの研磨方法 |
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JPWO2019077687A1 (ja) * | 2017-10-17 | 2019-11-14 | 株式会社Sumco | シリコンウェーハの研磨方法 |
CN110800085A (zh) * | 2017-10-17 | 2020-02-14 | 胜高股份有限公司 | 硅晶圆的抛光方法 |
DE112017007930T5 (de) | 2017-10-17 | 2020-05-28 | Sumco Corporation | Verfahren zum polieren eines siliziumwafers |
TWI742304B (zh) * | 2017-10-17 | 2021-10-11 | 日商Sumco股份有限公司 | 矽晶圓的研磨方法 |
CN110800085B (zh) * | 2017-10-17 | 2023-08-15 | 胜高股份有限公司 | 硅晶圆的抛光方法 |
US11890719B2 (en) | 2017-10-17 | 2024-02-06 | Sumco Corporation | Method of polishing silicon wafer |
Also Published As
Publication number | Publication date |
---|---|
KR20120023752A (ko) | 2012-03-13 |
KR101285120B1 (ko) | 2013-07-17 |
DE112010002227B4 (de) | 2018-11-29 |
DE112010002227T8 (de) | 2012-09-13 |
TWI447797B (zh) | 2014-08-01 |
DE112010002227T5 (de) | 2012-06-28 |
SG176631A1 (en) | 2012-01-30 |
JP5310848B2 (ja) | 2013-10-09 |
US20120080775A1 (en) | 2012-04-05 |
JPWO2010140671A1 (ja) | 2012-11-22 |
US8877643B2 (en) | 2014-11-04 |
TW201108316A (en) | 2011-03-01 |
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