JP5472169B2 - 液処理装置、液処理方法および記憶媒体 - Google Patents

液処理装置、液処理方法および記憶媒体 Download PDF

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Publication number
JP5472169B2
JP5472169B2 JP2011058240A JP2011058240A JP5472169B2 JP 5472169 B2 JP5472169 B2 JP 5472169B2 JP 2011058240 A JP2011058240 A JP 2011058240A JP 2011058240 A JP2011058240 A JP 2011058240A JP 5472169 B2 JP5472169 B2 JP 5472169B2
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gas
liquid
substrate
liquid processing
processed
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Japanese (ja)
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JP2012195444A5 (enExample
JP2012195444A (ja
Inventor
健治 西
和宏 竹下
信博 緒方
暁 田中
昌吾 溝田
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2011058240A priority Critical patent/JP5472169B2/ja
Priority to TW101107167A priority patent/TWI455230B/zh
Priority to US13/417,388 priority patent/US9305767B2/en
Priority to KR1020120025403A priority patent/KR101464613B1/ko
Priority to CN201210067192.9A priority patent/CN102683245B/zh
Publication of JP2012195444A publication Critical patent/JP2012195444A/ja
Publication of JP2012195444A5 publication Critical patent/JP2012195444A5/ja
Publication of JP5472169B2 publication Critical patent/JP5472169B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2011058240A 2011-03-16 2011-03-16 液処理装置、液処理方法および記憶媒体 Active JP5472169B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2011058240A JP5472169B2 (ja) 2011-03-16 2011-03-16 液処理装置、液処理方法および記憶媒体
TW101107167A TWI455230B (zh) 2011-03-16 2012-03-03 Liquid treatment device, liquid treatment method and memory medium
US13/417,388 US9305767B2 (en) 2011-03-16 2012-03-12 Liquid processing apparatus, liquid processing method and storage medium
KR1020120025403A KR101464613B1 (ko) 2011-03-16 2012-03-13 액처리 장치, 액처리 방법 및 기억 매체
CN201210067192.9A CN102683245B (zh) 2011-03-16 2012-03-14 液处理装置和液处理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011058240A JP5472169B2 (ja) 2011-03-16 2011-03-16 液処理装置、液処理方法および記憶媒体

Publications (3)

Publication Number Publication Date
JP2012195444A JP2012195444A (ja) 2012-10-11
JP2012195444A5 JP2012195444A5 (enExample) 2013-03-14
JP5472169B2 true JP5472169B2 (ja) 2014-04-16

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JP2011058240A Active JP5472169B2 (ja) 2011-03-16 2011-03-16 液処理装置、液処理方法および記憶媒体

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US (1) US9305767B2 (enExample)
JP (1) JP5472169B2 (enExample)
KR (1) KR101464613B1 (enExample)
CN (1) CN102683245B (enExample)
TW (1) TWI455230B (enExample)

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JP5453561B1 (ja) * 2012-12-20 2014-03-26 東京エレクトロン株式会社 液処理装置、液処理方法及び液処理用記憶媒体
JP6010457B2 (ja) * 2012-12-28 2016-10-19 東京エレクトロン株式会社 液処理装置および薬液回収方法
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JP6281161B2 (ja) * 2013-09-27 2018-02-21 東京エレクトロン株式会社 液処理装置
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CN109461685B (zh) * 2014-02-27 2022-03-08 株式会社思可林集团 基板处理装置
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JP6371716B2 (ja) * 2014-04-01 2018-08-08 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記録したコンピュータ読み取り可能な記録媒体
JP6411172B2 (ja) * 2014-10-24 2018-10-24 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
KR102347973B1 (ko) * 2014-12-30 2022-01-07 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP6482979B2 (ja) * 2015-07-29 2019-03-13 東京エレクトロン株式会社 液処理装置
JP2017157800A (ja) * 2016-03-04 2017-09-07 東京エレクトロン株式会社 液処理方法、基板処理装置、及び記憶媒体
JP6739285B2 (ja) * 2016-08-24 2020-08-12 東京エレクトロン株式会社 基板処理装置
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JP6890029B2 (ja) * 2017-03-31 2021-06-18 東京エレクトロン株式会社 基板搬送装置及び基板搬送方法
JP6869093B2 (ja) * 2017-04-27 2021-05-12 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置及び基板処理方法
KR102387542B1 (ko) * 2017-05-11 2022-04-19 주식회사 케이씨텍 에어공급부 및 기판 처리 장치
KR102366180B1 (ko) * 2017-07-04 2022-02-22 세메스 주식회사 기판 처리 장치
WO2019012978A1 (ja) * 2017-07-10 2019-01-17 東京エレクトロン株式会社 基板搬送装置および基板搬送方法
JP6887912B2 (ja) * 2017-08-07 2021-06-16 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP6925213B2 (ja) * 2017-09-22 2021-08-25 東京エレクトロン株式会社 加熱処理装置及び加熱処理方法
JP7125589B2 (ja) * 2018-03-15 2022-08-25 シンフォニアテクノロジー株式会社 Ｅｆｅｍシステム及びｅｆｅｍシステムにおけるガス供給方法
JP7213624B2 (ja) * 2018-05-01 2023-01-27 東京エレクトロン株式会社 基板処理装置、基板処理システムおよび基板処理方法
JP7166089B2 (ja) * 2018-06-29 2022-11-07 東京エレクトロン株式会社 基板処理装置、基板処理システムおよび基板処理方法
JP7189013B2 (ja) * 2018-12-28 2022-12-13 東京エレクトロン株式会社 基板処理装置および基板処理装置の運転方法
JP7359610B2 (ja) * 2019-09-13 2023-10-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
KR102357066B1 (ko) * 2019-10-31 2022-02-03 세메스 주식회사 기판 처리 장치
CN111151489A (zh) * 2019-12-31 2020-05-15 中威新能源(成都)有限公司 一种含有臭氧的喷淋式清洗硅片的方法
US20230330811A1 (en) * 2020-03-06 2023-10-19 Tokyo Electron Limited Grinding apparatus
JP7592500B2 (ja) * 2021-01-18 2024-12-02 東京エレクトロン株式会社 基板処理方法および基板処理装置
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Also Published As

Publication number Publication date
KR20120106584A (ko) 2012-09-26
CN102683245B (zh) 2015-10-28
TWI455230B (zh) 2014-10-01
US20120234356A1 (en) 2012-09-20
TW201308468A (zh) 2013-02-16
KR101464613B1 (ko) 2014-11-24
US9305767B2 (en) 2016-04-05
JP2012195444A (ja) 2012-10-11
CN102683245A (zh) 2012-09-19

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