JP5146527B2 - 液処理装置 - Google Patents
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- JP5146527B2 JP5146527B2 JP2010293669A JP2010293669A JP5146527B2 JP 5146527 B2 JP5146527 B2 JP 5146527B2 JP 2010293669 A JP2010293669 A JP 2010293669A JP 2010293669 A JP2010293669 A JP 2010293669A JP 5146527 B2 JP5146527 B2 JP 5146527B2
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- 239000007788 liquid Substances 0.000 title claims description 360
- 238000012423 maintenance Methods 0.000 claims description 49
- 238000011144 upstream manufacturing Methods 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 16
- 235000012431 wafers Nutrition 0.000 description 60
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 30
- 239000002585 base Substances 0.000 description 23
- 230000007246 mechanism Effects 0.000 description 21
- 238000011282 treatment Methods 0.000 description 17
- 230000002378 acidificating effect Effects 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 239000008367 deionised water Substances 0.000 description 7
- 229910021641 deionized water Inorganic materials 0.000 description 7
- 238000007599 discharging Methods 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001784 detoxification Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/87169—Supply and exhaust
Description
処理液により基板に対して液処理を行うための液処理ユニットと、
処理液を液処理ユニットに供給するために一端側が液処理ユニットに接続され、他端側が当該液処理ユニットの下方側に引き回される給液用配管と、
この給液用配管に介在する通流制御機器群が内部に取り付けられた筐体と、
この筐体内に、当該液処理装置の側方に位置する主メンテナンス領域に臨むように各々設けられ、前記通流制御機器群よりも上流側の給液用配管を着脱するための上流側の接続ポート及び前記通流制御機器群よりも下流側の給液用配管を着脱するための下流側の接続ポートと、を備えたことを特徴とする。
(a)前記上流側の接続ポートは、前記筐体内の上部側の位置に設けられ、前記下部側の接続ポートは、この筐体内の下部側の位置に設けられていること。
(b)前記通流制御機器群は、当該通流制御機器群が集約して配置される支持部材を介して前記筐体に取り付けられ、この支持部材は、主メンテナンス領域側に引き出し自在に設けられていること。
(c)前記給液用配管は処理液の種別に応じて複数設けられ、前記支持部材は、給液用配管の種別ごとに引き出し自在に設けられていること。
(d)前記機器ユニットにおける主メンテナンス領域側の側面には、主メンテナンス領域に機器ユニットを開放する状態と主メンテナンス領域と機器ユニットとを区画する状態との一方を選択するための蓋体が設けられていること。
(e)液処理ユニットからの液を排液するための排液用配管が前記主メンテナンス領域から見て前記機器ユニットを挟んで反対側に設けられていること。
(f)前記排液用配管は、当該液処理装置に固定して設けられていること。
(g)前記液処理ユニットを挟んで、主メンテナンス領域に対向する位置から当該液処理ユニットに臨む位置には、前記排液用配管にアクセスすることが可能な副メンテナンス領域が設けられていること。
(h)液処理ユニットは複数横方向に配列されて設けられ、各液処理ユニットに対応する機器ユニットは、液処理ユニットの下方にて液処理ユニットの並びに沿って設けられた共通の筐体に取り付けられていること。
回転軸251は、液処理部141内のベースプレート27上に設けられた軸受け部253に、回転自在な状態で保持されされている。
このように、用力系の配管群3、5、6の中で、液処理ユニット2に最も近い高さ位置に排気管3を配置することにより、圧力損失の増大を抑制し、工場全体の排気能力に対する液処理装置1への割り当て排気量を低減することができる。
ここで図1に示す147は、各液処理ユニット2が設けられている位置の液処理部141の壁面部分を、個別の液処理ユニット2が配置されている位置毎に取り外し可能な蓋体である。
また、用力系の配管群3、5、6の中で、液処理ユニット2に最も近い高さ位置に排気管3を配置することにより、圧力損失の増大を抑制し、工場全体の排気能力に対する液処理装置1への割り当て排気量を低減することができる。
1 液処理装置
2 液処理ユニット
3 排気管
4 通流制御ブロック
40 通流制御機器ユニット
402 通流制御器群
403 上流側ポート
406 下流側ポート
46 筐体基体
5 給液用主配管
6 排液用主配管
7 制御部
Claims (9)
- 基板に対して液処理を行う液処理装置であって、
処理液により基板に対して液処理を行うための液処理ユニットと、
処理液を液処理ユニットに供給するために一端側が液処理ユニットに接続され、他端側が当該液処理ユニットの下方側に引き回される給液用配管と、
この給液用配管に介在する通流制御機器群が内部に取り付けられた筐体と、
この筐体内に、当該液処理装置の側方に位置する主メンテナンス領域に臨むように各々設けられ、前記通流制御機器群よりも上流側の給液用配管を着脱するための上流側の接続ポート及び前記通流制御機器群よりも下流側の給液用配管を着脱するための下流側の接続ポートと、を備えたことを特徴とする液処理装置。 - 前記上流側の接続ポートは、前記筐体内の上部側の位置に設けられ、前記下部側の接続ポートは、この筐体内の下部側の位置に設けられていることを特徴とする請求項1記載の液処理装置。
- 前記通流制御機器群は、当該通流制御機器群が集約して配置される支持部材を介して前記筐体に取り付けられ、この支持部材は、主メンテナンス領域側に引き出し自在に設けられていることを特徴とする請求項1または2記載の液処理装置。
- 前記給液用配管は処理液の種別に応じて複数設けられ、
前記支持部材は、給液用配管の種別ごとに引き出し自在に設けられていることを特徴とする請求項3記載の液処理装置。 - 前記機器ユニットにおける主メンテナンス領域側の側面には、主メンテナンス領域に機器ユニットを開放する状態と主メンテナンス領域と機器ユニットとを区画する状態との一方を選択するための蓋体が設けられていることを特徴とする請求項1ないし4のいずれか一項に記載の液処理装置。
- 液処理ユニットからの液を排液するための排液用配管が前記主メンテナンス領域から見て前記機器ユニットを挟んで反対側に設けられていることを特徴とする請求項1ないし5のいずれか一項に記載の液処理装置。
- 前記排液用配管は、当該液処理装置に固定して設けられていることを特徴とする請求項6に記載の液処理装置
- 前記液処理ユニットを挟んで、主メンテナンス領域に対向する位置から当該液処理ユニットに臨む位置には、前記排液用配管にアクセスすることが可能な副メンテナンス領域が設けられていることを特徴とする請求項6または7に記載の液処理装置。
- 液処理ユニットは複数横方向に配列されて設けられ、
各液処理ユニットに対応する機器ユニットは、液処理ユニットの下方にて液処理ユニットの並びに沿って設けられた共通の筐体に取り付けられていることを特徴とする請求項1ないし8のいずれか一項に記載の液処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010293669A JP5146527B2 (ja) | 2010-12-28 | 2010-12-28 | 液処理装置 |
TW100144208A TWI423854B (zh) | 2010-12-28 | 2011-12-01 | Liquid treatment device |
CN201110458178.7A CN102543710B (zh) | 2010-12-28 | 2011-12-27 | 液处理装置 |
KR1020110143809A KR101652773B1 (ko) | 2010-12-28 | 2011-12-27 | 액처리 장치 |
US13/338,372 US20120160353A1 (en) | 2010-12-28 | 2011-12-28 | Liquid processing apparatus |
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JP2010293669A JP5146527B2 (ja) | 2010-12-28 | 2010-12-28 | 液処理装置 |
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JP2012142405A JP2012142405A (ja) | 2012-07-26 |
JP5146527B2 true JP5146527B2 (ja) | 2013-02-20 |
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US (1) | US20120160353A1 (ja) |
JP (1) | JP5146527B2 (ja) |
KR (1) | KR101652773B1 (ja) |
CN (1) | CN102543710B (ja) |
TW (1) | TWI423854B (ja) |
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JP6033048B2 (ja) * | 2012-11-15 | 2016-11-30 | 東京エレクトロン株式会社 | 液処理装置 |
CN105849859B (zh) * | 2013-12-26 | 2019-11-01 | 柯尼卡美能达株式会社 | 电子器件的印刷制造系统 |
KR102163847B1 (ko) * | 2014-05-21 | 2020-10-12 | 주식회사 케이씨텍 | 화학 기계적 연마 장비의 설치 방법 |
JP6289341B2 (ja) | 2014-10-31 | 2018-03-07 | 東京エレクトロン株式会社 | 基板液処理装置、排気切替ユニットおよび基板液処理方法 |
JP6571022B2 (ja) * | 2016-02-04 | 2019-09-04 | 東京エレクトロン株式会社 | 基板処理装置 |
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US6457199B1 (en) * | 2000-10-12 | 2002-10-01 | Lam Research Corporation | Substrate processing in an immersion, scrub and dry system |
JP2002224630A (ja) * | 2001-01-22 | 2002-08-13 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | 洗浄装置及び方法 |
JP4767783B2 (ja) * | 2006-07-26 | 2011-09-07 | 東京エレクトロン株式会社 | 液処理装置 |
US20080163900A1 (en) * | 2007-01-05 | 2008-07-10 | Douglas Richards | Ipa delivery system for drying |
KR100929817B1 (ko) * | 2007-10-23 | 2009-12-07 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 장치의 제조 방법 |
JP5406518B2 (ja) | 2008-12-18 | 2014-02-05 | 大日本スクリーン製造株式会社 | 基板処理装置 |
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- 2011-12-01 TW TW100144208A patent/TWI423854B/zh active
- 2011-12-27 KR KR1020110143809A patent/KR101652773B1/ko active IP Right Grant
- 2011-12-27 CN CN201110458178.7A patent/CN102543710B/zh active Active
- 2011-12-28 US US13/338,372 patent/US20120160353A1/en not_active Abandoned
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US20120160353A1 (en) | 2012-06-28 |
TWI423854B (zh) | 2014-01-21 |
CN102543710B (zh) | 2015-10-07 |
KR101652773B1 (ko) | 2016-08-31 |
JP2012142405A (ja) | 2012-07-26 |
TW201244831A (en) | 2012-11-16 |
KR20120075430A (ko) | 2012-07-06 |
CN102543710A (zh) | 2012-07-04 |
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