JP5451098B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5451098B2
JP5451098B2 JP2009026702A JP2009026702A JP5451098B2 JP 5451098 B2 JP5451098 B2 JP 5451098B2 JP 2009026702 A JP2009026702 A JP 2009026702A JP 2009026702 A JP2009026702 A JP 2009026702A JP 5451098 B2 JP5451098 B2 JP 5451098B2
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Japanese (ja)
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JP2010182976A5 (enExample
JP2010182976A (ja
Inventor
章 大谷
高典 渡邉
武史 市川
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Canon Inc
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Canon Inc
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Priority to JP2009026702A priority Critical patent/JP5451098B2/ja
Priority to US12/692,804 priority patent/US8053272B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2009026702A 2009-02-06 2009-02-06 半導体装置の製造方法 Expired - Fee Related JP5451098B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009026702A JP5451098B2 (ja) 2009-02-06 2009-02-06 半導体装置の製造方法
US12/692,804 US8053272B2 (en) 2009-02-06 2010-01-25 Semiconductor device fabrication method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009026702A JP5451098B2 (ja) 2009-02-06 2009-02-06 半導体装置の製造方法

Publications (3)

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JP2010182976A JP2010182976A (ja) 2010-08-19
JP2010182976A5 JP2010182976A5 (enExample) 2012-03-01
JP5451098B2 true JP5451098B2 (ja) 2014-03-26

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JP2009026702A Expired - Fee Related JP5451098B2 (ja) 2009-02-06 2009-02-06 半導体装置の製造方法

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US (1) US8053272B2 (enExample)
JP (1) JP5451098B2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010206172A (ja) 2009-02-06 2010-09-16 Canon Inc 撮像装置およびカメラ
JP2010206174A (ja) 2009-02-06 2010-09-16 Canon Inc 光電変換装置およびその製造方法ならびにカメラ
JP2010206181A (ja) * 2009-02-06 2010-09-16 Canon Inc 光電変換装置及び撮像システム
JP2010206173A (ja) 2009-02-06 2010-09-16 Canon Inc 光電変換装置およびカメラ
JP2010206178A (ja) 2009-02-06 2010-09-16 Canon Inc 光電変換装置、及び光電変換装置の製造方法
JP5489855B2 (ja) 2010-05-14 2014-05-14 キヤノン株式会社 固体撮像装置の製造方法
KR101770289B1 (ko) * 2010-09-29 2017-08-23 삼성전자주식회사 이미지 센서 및 이의 형성 방법
JP6084922B2 (ja) * 2011-06-23 2017-02-22 パナソニック株式会社 固体撮像装置
JP5930650B2 (ja) * 2011-10-07 2016-06-08 キヤノン株式会社 半導体装置の製造方法
JP2013247347A (ja) 2012-05-29 2013-12-09 Canon Inc 半導体装置及びその製造方法
KR102025339B1 (ko) 2013-03-07 2019-09-26 삼성전자 주식회사 도전성 플러그를 포함하는 반도체 소자
JP6161454B2 (ja) * 2013-07-25 2017-07-12 キヤノン株式会社 光電変換装置、その製造方法及びカメラ
JP6491509B2 (ja) * 2015-03-25 2019-03-27 キヤノン株式会社 固体撮像装置及びその製造方法
JP6861471B2 (ja) * 2015-06-12 2021-04-21 キヤノン株式会社 撮像装置およびその製造方法ならびにカメラ
EP3113224B1 (en) 2015-06-12 2020-07-08 Canon Kabushiki Kaisha Imaging apparatus, method of manufacturing the same, and camera
JP7084735B2 (ja) * 2018-01-31 2022-06-15 キヤノン株式会社 半導体装置の製造方法
JP7327916B2 (ja) * 2018-09-11 2023-08-16 キヤノン株式会社 光電変換装置および機器

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JPH08130246A (ja) * 1994-10-28 1996-05-21 Ricoh Co Ltd 半導体装置とその製造方法
JP3292657B2 (ja) 1995-04-10 2002-06-17 キヤノン株式会社 薄膜トランジスタ及びそれを用いた液晶表示装置の製造法
JP3248470B2 (ja) * 1997-11-21 2002-01-21 日本電気株式会社 電荷転送装置および電荷転送装置の製造方法
JP2000349096A (ja) * 1999-06-01 2000-12-15 Matsushita Electric Ind Co Ltd 化合物電界効果トランジスタおよびその製造方法
KR100304503B1 (ko) * 1999-07-09 2001-11-01 김영환 반도체장치의 제조방법
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KR100618820B1 (ko) * 2004-02-10 2006-09-12 삼성전자주식회사 Ｐｎ 접합에 의해 분리된 수광부를 갖는 포토다이오드 및 그의 제조방법
JP5224633B2 (ja) 2004-03-30 2013-07-03 キヤノン株式会社 半導体装置の製造方法
US7737519B2 (en) 2004-05-06 2010-06-15 Canon Kabushiki Kaisha Photoelectric conversion device and manufacturing method thereof
WO2005124306A1 (en) 2004-06-15 2005-12-29 Canon Kabushiki Kaisha Semiconductor device
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JP4513497B2 (ja) 2004-10-19 2010-07-28 ソニー株式会社 固体撮像装置
US8120077B2 (en) 2004-12-16 2012-02-21 Panasonic Corporation Solid-state imaging device comprising doped channel stop at isolation regions to suppress noise
KR100670803B1 (ko) 2004-12-21 2007-01-19 한국전자통신연구원 쇼키 장벽 금속 산화물 반도체 전계 효과 트랜지스터의양극 전도성을 이용한 소자
EP2341539B1 (en) 2005-03-11 2014-10-08 Fujitsu Semiconductor Limited Image sensor with embedded photodiode region and manufacturing method for same
KR100690884B1 (ko) 2005-04-28 2007-03-09 삼성전자주식회사 이미지 센서 및 그 제조 방법
US20070023796A1 (en) 2005-07-27 2007-02-01 International Business Machines Corporation Pinning layer for pixel sensor cell and method thereof
JP2007073544A (ja) 2005-09-02 2007-03-22 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
US7728277B2 (en) 2005-11-16 2010-06-01 Eastman Kodak Company PMOS pixel structure with low cross talk for active pixel image sensors
KR100761829B1 (ko) 2005-12-15 2007-09-28 삼성전자주식회사 반도체 소자, 시모스 이미지 센서, 반도체 소자의 제조방법및 시모스 이미지 센서의 제조방법
KR100837271B1 (ko) 2006-08-10 2008-06-12 삼성전자주식회사 반도체 장치 및 그 제조방법
JP5305622B2 (ja) * 2006-08-31 2013-10-02 キヤノン株式会社 光電変換装置の製造方法
JP2008153566A (ja) 2006-12-20 2008-07-03 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法
JP2010206172A (ja) * 2009-02-06 2010-09-16 Canon Inc 撮像装置およびカメラ

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US8053272B2 (en) 2011-11-08
JP2010182976A (ja) 2010-08-19
US20100203670A1 (en) 2010-08-12

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