JP5395825B2 - 薄膜トランジスタ、その製造方法及びそれを用いた表示装置 - Google Patents
薄膜トランジスタ、その製造方法及びそれを用いた表示装置 Download PDFInfo
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- JP5395825B2 JP5395825B2 JP2011031543A JP2011031543A JP5395825B2 JP 5395825 B2 JP5395825 B2 JP 5395825B2 JP 2011031543 A JP2011031543 A JP 2011031543A JP 2011031543 A JP2011031543 A JP 2011031543A JP 5395825 B2 JP5395825 B2 JP 5395825B2
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- 239000010409 thin film Substances 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title description 10
- 239000010410 layer Substances 0.000 claims description 249
- 239000004065 semiconductor Substances 0.000 claims description 120
- 239000011241 protective layer Substances 0.000 claims description 78
- 239000000758 substrate Substances 0.000 claims description 28
- 229910052738 indium Inorganic materials 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 239000010408 film Substances 0.000 description 63
- 230000003647 oxidation Effects 0.000 description 27
- 238000007254 oxidation reaction Methods 0.000 description 27
- 238000004544 sputter deposition Methods 0.000 description 23
- 238000000034 method Methods 0.000 description 22
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- 125000004429 atom Chemical group 0.000 description 17
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- 229910052760 oxygen Inorganic materials 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 230000001590 oxidative effect Effects 0.000 description 10
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
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- 238000001039 wet etching Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005324 grain boundary diffusion Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
基板上に設けられたゲート電極と、前記ゲート電極上にゲート絶縁層を介して設けられた、In、Zn及びGaのうち少なくとも1つを含むアモルファス酸化物からなる半導体層と、前記半導体層に電気的に接して設けられたソース及びドレイン電極と、金属酸化物からなる保護層と、を含むボトムゲート型の薄膜トランジスタであって、
前記保護層は、前記半導体層上に該半導体層と接して設けられ、
前記半導体層は前記保護層を形成する際に受けるダメージの深さよりも深く酸化されており、
前記半導体層の前記保護層に接した少なくとも一部の領域が前記保護層と接していない他の領域よりも抵抗が高いことを特徴とする。
以下、図8を参照して、半導体層4の構成について詳細に説明する。
2 ゲート電極
3 ゲート絶縁層
4 半導体層
4a 第1の層
4b 第2の層
5 ソース電極
6 ドレイン電極
7 保護層
Claims (5)
- 基板上に設けられたゲート電極と、前記ゲート電極上にゲート絶縁層を介して設けられた、In、Zn及びGaのうち少なくとも1つを含むアモルファス酸化物からなる半導体層と、前記半導体層に電気的に接して設けられたソース及びドレイン電極と、金属酸化物からなる保護層と、を含むボトムゲート型の薄膜トランジスタであって、
前記保護層は、前記半導体層上に該半導体層と接して設けられ、
前記半導体層は前記保護層を形成する際に受けるダメージの深さよりも深く酸化されており、
前記半導体層の前記保護層に接した少なくとも一部の領域が前記保護層と接していない他の領域よりも抵抗が高いことを特徴とする薄膜トランジスタ。 - 前記半導体層は、少なくともチャネル層として機能する第1の領域と、前記保護層に接して設けられている第2の領域と、を含み、
前記第2の領域は、前記第1の領域よりも抵抗が高いことを特徴とする請求項1に記載の薄膜トランジスタ。 - 前記半導体層は、In、Zn及びGaを含むアモルファス酸化物であることを特徴とする請求項1又は2に記載の薄膜トランジスタ。
- 請求項1〜3のいずれか1項に記載の薄膜トランジスタと、前記薄膜トランジスタにより構成される画素駆動回路と、を具備することを特徴とする表示装置。
- 請求項1〜3のいずれか1項に記載の薄膜トランジスタと、前記薄膜トランジスタにより駆動される有機EL素子と、を具備することを特徴とする表示装置。
Priority Applications (1)
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JP2011031543A JP5395825B2 (ja) | 2007-09-28 | 2011-02-17 | 薄膜トランジスタ、その製造方法及びそれを用いた表示装置 |
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JP2007254364 | 2007-09-28 | ||
JP2007254364 | 2007-09-28 | ||
JP2011031543A JP5395825B2 (ja) | 2007-09-28 | 2011-02-17 | 薄膜トランジスタ、その製造方法及びそれを用いた表示装置 |
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JP2011146724A JP2011146724A (ja) | 2011-07-28 |
JP5395825B2 true JP5395825B2 (ja) | 2014-01-22 |
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JP2011031543A Expired - Fee Related JP5395825B2 (ja) | 2007-09-28 | 2011-02-17 | 薄膜トランジスタ、その製造方法及びそれを用いた表示装置 |
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Country Status (7)
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US (2) | US8563977B2 (ja) |
EP (1) | EP2195848B1 (ja) |
JP (2) | JP4759598B2 (ja) |
KR (1) | KR101148718B1 (ja) |
CN (1) | CN101809747B (ja) |
TW (1) | TWI377683B (ja) |
WO (1) | WO2009041544A1 (ja) |
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JP4759598B2 (ja) * | 2007-09-28 | 2011-08-31 | キヤノン株式会社 | 薄膜トランジスタ、その製造方法及びそれを用いた表示装置 |
EP2256795B1 (en) * | 2009-05-29 | 2014-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for oxide semiconductor device |
JP5424724B2 (ja) | 2009-06-04 | 2014-02-26 | 富士フイルム株式会社 | 電界効果型トランジスタの製造方法、電界効果型トランジスタ、表示装置、及び電磁波検出器 |
JPWO2011001715A1 (ja) * | 2009-06-29 | 2012-12-13 | シャープ株式会社 | 酸化物半導体、薄膜トランジスタアレイ基板及びその製造方法、並びに、表示装置 |
KR102011616B1 (ko) | 2009-06-30 | 2019-08-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제조 방법 |
WO2011001881A1 (en) | 2009-06-30 | 2011-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
KR101732859B1 (ko) | 2009-06-30 | 2017-05-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제조 방법 |
KR101810699B1 (ko) | 2009-06-30 | 2018-01-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제작 방법 |
JP5663214B2 (ja) * | 2009-07-03 | 2015-02-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR101642620B1 (ko) * | 2009-07-10 | 2016-07-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
EP2452362B1 (en) | 2009-07-10 | 2017-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
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JP4759598B2 (ja) | 2011-08-31 |
JP2011146724A (ja) | 2011-07-28 |
TWI377683B (en) | 2012-11-21 |
EP2195848B1 (en) | 2012-07-18 |
CN101809747A (zh) | 2010-08-18 |
CN101809747B (zh) | 2012-12-26 |
TW200929546A (en) | 2009-07-01 |
US20100213459A1 (en) | 2010-08-26 |
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