JP5372253B2 - パネル、パネルの製造方法、太陽電池モジュール、印刷装置および印刷方法 - Google Patents
パネル、パネルの製造方法、太陽電池モジュール、印刷装置および印刷方法 Download PDFInfo
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- JP5372253B2 JP5372253B2 JP2012523547A JP2012523547A JP5372253B2 JP 5372253 B2 JP5372253 B2 JP 5372253B2 JP 2012523547 A JP2012523547 A JP 2012523547A JP 2012523547 A JP2012523547 A JP 2012523547A JP 5372253 B2 JP5372253 B2 JP 5372253B2
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- 239000000976 ink Substances 0.000 description 151
- 239000004020 conductor Substances 0.000 description 86
- 239000003963 antioxidant agent Substances 0.000 description 36
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- 229910052709 silver Inorganic materials 0.000 description 30
- 239000004332 silver Substances 0.000 description 30
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 28
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 21
- 229910052802 copper Inorganic materials 0.000 description 21
- 239000010949 copper Substances 0.000 description 21
- 229910052782 aluminium Inorganic materials 0.000 description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 14
- 229910052799 carbon Inorganic materials 0.000 description 14
- 229910017052 cobalt Inorganic materials 0.000 description 14
- 239000010941 cobalt Substances 0.000 description 14
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 14
- 229910052737 gold Inorganic materials 0.000 description 14
- 239000010931 gold Substances 0.000 description 14
- 229910052759 nickel Inorganic materials 0.000 description 14
- 239000010936 titanium Substances 0.000 description 14
- 229910052719 titanium Inorganic materials 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
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- 230000003064 anti-oxidating effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229910004612 CdTe—CdS Inorganic materials 0.000 description 1
- 229910002475 Cu2ZnSnS4 Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical group OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Description
以下、図面を参照して、本発明によるパネルの第1実施形態を説明する。図1に、パネル100の模式的な断面図を示す。ここでは、パネル100はソーラーパネルである。図1は、パネル100の一方の主面の近傍を拡大して示している。
以下、図8を参照して本発明によるパネルの第2実施形態を説明する。本実施形態のパネル100Aは、酸化防止層をさらに備えている点を除いて図1〜図3を参照して上述したパネル100と同様の構成を有しており、冗長を避けるために重複する説明を省略する。ここでも、電極20は、導電層20aおよび導電層20bを有しており、導電層20aの幅は導電層20bの幅とほぼ等しい。
以下、図12を参照して本発明によるパネルの第3実施形態を説明する。本実施形態のパネル100Cは、ある方向(ここではx方向)に延びる電極24の断面積が位置に応じて異なる点を除いて、図1から図3を参照して上述したパネル100と同様の構成を有しており、冗長を避けるために重複する説明を省略する。
12 表面
14 裏面
20 電極
20D 積層構造
20a 第1導電層
20b 第2導電層
22 バスバー電極
24 フィンガー電極
100 パネル
200 印刷装置
210 コンベア
220 印刷部
230 加熱装置
300 太陽電池モジュール
Claims (4)
- 表面を有する基板を用意する工程と、
前記基板の前記表面に電極を形成する工程と
を包含する、パネルの製造方法であって、
前記電極を形成する工程は、
ある方向に線状に延びた積層構造を有する第1線状部および前記第1線状部とは異なる方向に延びた第2線状部を含む導電性インクを、前記第2線状部の長手方向に直交する断面の断面積が前記第1線状部から離れる方向に沿って減少するように印刷する工程と、
前記導電性インクを加熱する工程と
を含む、パネルの製造方法。 - 前記印刷する工程は、
第1導電性インクを印刷する工程と、
前記第1導電性インクの上に、前記第1導電性インクと比べて幅および長さの少なくとも一方の小さい第2導電性インクを印刷する工程と
を含む、請求項1に記載のパネルの製造方法。 - 前記第1導電性インクを印刷する工程において、第1印刷機が前記第1導電性インクを印刷し、
前記第2導電性インクを印刷する工程において、前記第1印刷機とは異なる第2印刷機が前記第2導電性インクを印刷する、請求項2に記載のパネルの製造方法。 - 前記電極を形成する工程は、
前記第1印刷機が前記第1導電性インクを印刷した後、前記第2印刷機が前記第2導電性インクを印刷する前に、前記第1導電性インクの印刷された前記基板をコンベアで前記第1印刷機から前記第2印刷機まで搬送する工程をさらに含む、請求項3に記載のパネルの製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2012523547A JP5372253B2 (ja) | 2010-07-09 | 2011-07-11 | パネル、パネルの製造方法、太陽電池モジュール、印刷装置および印刷方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010157344 | 2010-07-09 | ||
JP2010157344 | 2010-07-09 | ||
JP2012523547A JP5372253B2 (ja) | 2010-07-09 | 2011-07-11 | パネル、パネルの製造方法、太陽電池モジュール、印刷装置および印刷方法 |
PCT/JP2011/065754 WO2012005374A1 (ja) | 2010-07-09 | 2011-07-11 | パネル、パネルの製造方法、太陽電池モジュール、印刷装置および印刷方法 |
Related Child Applications (1)
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JP2013192437A Division JP5922072B2 (ja) | 2010-07-09 | 2013-09-17 | パネル、パネルの製造方法、太陽電池モジュール、印刷装置および印刷方法 |
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JPWO2012005374A1 JPWO2012005374A1 (ja) | 2013-09-05 |
JP5372253B2 true JP5372253B2 (ja) | 2013-12-18 |
Family
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JP2012523547A Active JP5372253B2 (ja) | 2010-07-09 | 2011-07-11 | パネル、パネルの製造方法、太陽電池モジュール、印刷装置および印刷方法 |
JP2013192437A Active JP5922072B2 (ja) | 2010-07-09 | 2013-09-17 | パネル、パネルの製造方法、太陽電池モジュール、印刷装置および印刷方法 |
JP2016019709A Pending JP2016066826A (ja) | 2010-07-09 | 2016-02-04 | パネル、パネルの製造方法、太陽電池モジュール、印刷装置および印刷方法 |
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JP2013192437A Active JP5922072B2 (ja) | 2010-07-09 | 2013-09-17 | パネル、パネルの製造方法、太陽電池モジュール、印刷装置および印刷方法 |
JP2016019709A Pending JP2016066826A (ja) | 2010-07-09 | 2016-02-04 | パネル、パネルの製造方法、太陽電池モジュール、印刷装置および印刷方法 |
Country Status (8)
Country | Link |
---|---|
US (2) | US9559241B2 (ja) |
EP (3) | EP2804205A1 (ja) |
JP (3) | JP5372253B2 (ja) |
KR (2) | KR101528409B1 (ja) |
CN (3) | CN103098227B (ja) |
MX (2) | MX2013000108A (ja) |
TW (3) | TWI475702B (ja) |
WO (1) | WO2012005374A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6186683B2 (ja) * | 2012-09-14 | 2017-08-30 | 信越化学工業株式会社 | 太陽電池の製造方法 |
WO2014097829A1 (ja) * | 2012-12-17 | 2014-06-26 | 株式会社カネカ | 太陽電池およびその製造方法、ならびに太陽電池モジュール |
TWI508311B (zh) * | 2013-04-23 | 2015-11-11 | Motech Ind Inc | 太陽能電池及其製造方法 |
KR101614186B1 (ko) | 2013-05-20 | 2016-04-20 | 엘지전자 주식회사 | 태양전지 및 이의 제조 방법 |
CN103240967A (zh) * | 2013-05-30 | 2013-08-14 | 昆山欧莱特印刷机械工业有限公司 | 一种新型移印机胶头装置 |
TWI509114B (zh) * | 2014-03-07 | 2015-11-21 | Chang Yi Chen | 使用印刷金屬化圖案製作塑模互連元件的方法及其塑模互連元件 |
CN105592640B (zh) * | 2014-10-22 | 2019-02-15 | 中国科学院理化技术研究所 | 一种柔性印制电路的制备方法 |
JP2016219508A (ja) * | 2015-05-15 | 2016-12-22 | パナソニック株式会社 | 電子デバイスの製造方法および電子デバイス |
CN107718862B (zh) * | 2017-09-01 | 2020-12-15 | 昆山恒盛电子有限公司 | 用于印刷太阳能电池电极的无网结网版及其制备方法 |
WO2019179623A1 (en) * | 2018-03-22 | 2019-09-26 | Applied Materials Italia S.R.L. | Device and method for cleaning a printing device |
KR102192869B1 (ko) * | 2018-11-30 | 2020-12-18 | (주)케이엔씨 | 그라비아 오프셋 인쇄 시스템 |
CN112013665A (zh) * | 2020-08-18 | 2020-12-01 | 涌明科技(上海)有限公司 | 一种半导体芯片除湿及抗氧化装置 |
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CN103098227B (zh) | 2016-04-20 |
MX2013000108A (es) | 2013-06-13 |
CN104900732A (zh) | 2015-09-09 |
TWI475702B (zh) | 2015-03-01 |
CN105047741A (zh) | 2015-11-11 |
CN103098227A (zh) | 2013-05-08 |
EP2804205A1 (en) | 2014-11-19 |
MX338776B (es) | 2016-05-02 |
TW201212256A (en) | 2012-03-16 |
TWI495121B (zh) | 2015-08-01 |
TW201205842A (en) | 2012-02-01 |
TW201205841A (en) | 2012-02-01 |
EP2592658B1 (en) | 2016-01-13 |
EP2592658A4 (en) | 2014-06-11 |
US20130122645A1 (en) | 2013-05-16 |
JP5922072B2 (ja) | 2016-05-24 |
CN105047741B (zh) | 2018-01-12 |
KR20150003916A (ko) | 2015-01-09 |
EP2804204B1 (en) | 2017-11-29 |
WO2012005374A1 (ja) | 2012-01-12 |
EP2592658A1 (en) | 2013-05-15 |
KR101528409B1 (ko) | 2015-06-11 |
JP2014042035A (ja) | 2014-03-06 |
KR20130031930A (ko) | 2013-03-29 |
EP2804204A1 (en) | 2014-11-19 |
JP2016066826A (ja) | 2016-04-28 |
US9559241B2 (en) | 2017-01-31 |
TWI463683B (zh) | 2014-12-01 |
US20170092802A1 (en) | 2017-03-30 |
KR101757968B1 (ko) | 2017-07-14 |
CN104900732B (zh) | 2017-07-28 |
JPWO2012005374A1 (ja) | 2013-09-05 |
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